101 |
低温烧结陶瓷及电子部件 |
CN02107122.5 |
2002-03-11 |
CN1183057C |
2005-01-05 |
大渕武志; 成尾良明; 井出良律 |
本发明提供下述的低温烧结陶瓷,该低温烧结陶瓷可在1000℃以下的低温区中烧结,能降低介电常数εr,能提高质量因数,并且能将裂纹发生率抑制得很低。低温烧结陶瓷含有换算成BaO为10~64重量%的钡成分、换算成SiO2为20~80重量%的硅成分、换算成Al2O3为0.1~20重量%的铝成分、换算成B2O3为0.3~1.0重量%的硼成分、换算成ZnO为0.5~20重量%的锌成分、以及换算成Bi2O3为20重量%以下的铋成分。 |
102 |
陶瓷叠层体及其制造方法 |
CN200310101354.7 |
2003-10-15 |
CN1497628A |
2004-05-19 |
本田和义; 高井顺子; 长井淳夫; 村尾正子; 小林惠治 |
本发明提供一种陶瓷叠层体(10),其包括:含有金属元素的多个陶瓷层(12)、以及布置在上述陶瓷层(12)之间的多个金属层(14a、14b)。上述金属层(14a、14b),其主要成分包括从Ni、Cu、Ag和Pd中选择出的至少一种,总含量为50atm%以上,添加剂成分包括上述陶瓷绿板(12)中所包含的上述金属元素中的至少一种,含量为1atm%以上、不足50atm%。这样能获得金属层在烧结后不易断裂的陶瓷叠层体。 |
103 |
低温烧结瓷器及电子部件 |
CN02107122.5 |
2002-03-11 |
CN1374272A |
2002-10-16 |
大渕武志; 成尾良明; 井出良律 |
本发明提供下述的低温烧结瓷器,该低温烧结瓷器可在1000℃以下的低温区中烧结,能降低介电常数εr,能提高质量因数,并且能将裂纹发生率抑制得很低。低温烧结瓷器含有换算成BaO为10~64重量%的钡成分、换算成SiO2为20~80重量%的硅成分、换算成Al2O3为0.1~20重量%的铝成分、换算成B2O3为0.3~1.0重量%的硼成分、换算成ZnO为0.5~20重量%的锌成分、以及换算成Bi2O3为20重量%以下的铋成分。 |
104 |
绝缘陶瓷压块、陶瓷多层基板和陶瓷电子器件 |
CN01122798.2 |
2001-07-20 |
CN1334256A |
2002-02-06 |
森直哉; 杉本安隆; 近川修 |
提供一种可通过低温烧制获得的绝缘陶瓷压块,它具有低的相对介电常数和优良的高频特性,能与热膨胀系数高的材料共烧结。这种绝缘陶瓷压块是MgAl2O4基陶瓷和硼硅酸盐玻璃的烧制混合物,其中,MgAl2O4晶相与Mg3B2O6晶相和Mg2B2O5晶相中至少一种晶相以主晶相析出。 |
105 |
复合叠片及其制造方法 |
CN00133783.1 |
2000-10-30 |
CN1305339A |
2001-07-25 |
龟田裕和; 中尾修也; 黑田茂之; 小嶋胜; 田中谦次 |
本发明提供一种复合叠层,该复合叠层包含包括第一微粒聚集体的第一片层和包含第二微粒聚集体的第二片层。在两个第一片层之间设置每个内部第二片层并且第二片层的两个外部片层构成复合叠层的两个主表面。内部第二片层的厚度大于外部第二片层的厚度。第一片层与第二片层通过包含在第一片层内的一部分第一微粒聚集体渗入第二片层互相结合。这样的结构能够减少复合叠层在煅烧步骤中的横向收缩。 |
106 |
陶瓷糊浆组合物和制造陶瓷坯料片及多层电子元件的方法 |
CN00131765.2 |
2000-10-12 |
CN1303104A |
2001-07-11 |
中村一郎; 田中秀彦 |
公开了一种具有均匀分散且无严重损伤的陶瓷粉末的陶瓷糊浆组合物。一种使用该陶瓷糊浆组合物制造陶瓷坯料片的方法和一种多层陶瓷电子元件的制造方法。该陶瓷糊浆组合物含有陶瓷粉末、分散剂、粘合剂和溶剂,其中使用阴离子分散剂作为分散剂,其用量设定为其总酸值相当于陶瓷粉末总碱值的10—150%。使用的陶瓷粉末的平均粒径为0.01—1微米。 |
107 |
复合未焙烧陶瓷坯体及其制造方法 |
CN95119887.4 |
1991-10-04 |
CN1048969C |
2000-02-02 |
K·R·米克斯卡; D·T·谢弗 |
焙烧陶瓷坯体时减小X-Y收缩的方法,有柔性约束层在焙烧时变为多孔,将其加在陶瓷坯体上,柔性约束层在焙烧组合件时,在未焙烧的陶瓷坯体的表面上密切吻合。 |
108 |
用于固体电解质电绝缘的陶瓷绝缘层装置 |
CN94191132.2 |
1994-11-26 |
CN1042460C |
1999-03-10 |
卡尔-赫尔曼·弗里则; 海因茨·盖依尔; 维尔纳·格鲁根瓦尔德; 克劳迪欧·德·拉·普林塔 |
一种特别用于气体探测器的绝缘层装置,包括至少一导电的固体电解质层(10)、一导电层(20)以及该固体电解质层(10)与该导电层(20)之间的至少一电绝缘层(13)。该绝缘层(13)的材料在烧结前含有作为添加剂的铌或钽的五价金属氧化物,该添加剂可在烧结过程中扩散入邻接的固体电解质层(10)中。 |
109 |
陶瓷坯体焙烧时减小收缩的方法 |
CN91109552.7 |
1991-10-04 |
CN1061585A |
1992-06-03 |
K·R·米克斯卡; D·T·谢弗 |
焙烧陶瓷坯体时减小X-Y收缩的方法,有柔性约束层在焙烧时变为多孔,将其加在陶瓷坯体上,柔性约束层在焙烧组合件时,在未焙烧的陶瓷坯体的表面上密切吻合。 |
110 |
超导电路板及其采用的涂料 |
CN88102627 |
1988-05-07 |
CN88102627A |
1988-12-07 |
横山博三; 今中佳彦; 山中一典; 亀原伸男; 丹羽纮一; 卷拓也; 铃木均; 町敬人 |
本发明提供一种超导电路板,它包括含有氧化铝重量百分比大于99%的烧结氧化铝板和在此氧化铝板上形成的超导陶瓷互连电路图形。由于将Ti或Si连结剂加入形成此互连电路图形的涂料中,改进了互连电路图形与氧化铝板的粘合力。用铜粉代替铜氧化物粉作为涂料中形成超导陶瓷的一种成分有利于印制和获得均匀的超导陶瓷电路图形。 |
111 |
多层超导电路衬底及其制备方法 |
CN88102545 |
1988-04-27 |
CN88102545A |
1988-11-23 |
今中佳彦; 町敬人; 山中一典; 横山博三; 龟原伸男; 丹羽纮一 |
本发明提供了一种多层超导电路衬底,它包括绝缘层和位于绝缘层之间的超导陶瓷材料的内连接模块,借助于超导陶瓷材料通孔将超导陶瓷材料模块连通。超导陶瓷材料的模块最好用金、银、铂及其合金封装。 |
112 |
METHOD FOR MANUFACTURING LARGE CERAMIC CO-FIRED ARTICLES |
PCT/EP2015060126 |
2015-05-07 |
WO2015169929A3 |
2016-02-18 |
AHRENDES SAMUEL; HARLAND GARY; LEE CHENGTSIN; TOMASEK EDWARD; YORK GEORGE |
A method of forming one or more high temperature co-fired ceramic articles, comprising the steps of:- a) forming (34) a plurality of green compacts, by a process comprising dry pressing a powder comprising ceramic and organic binder to form a green compact; b) disposing (38) a conductor or conductor precursor to at least one surface of at least one of the plurality of green compacts to form at least one patterned green compact; c) assembling the at least one patterned green compact with one or more of the plurality of green compacts or patterned green compacts or both to form a laminated assembly; d) isostatically (40) pressing the laminated assembly to form a pressed laminated assembly; e) firing (42) the pressed laminated assembly at a temperature sufficient to sinter the ceramic layers together. |
113 |
SENSOR WITH ELECTRODES OF A SAME MATERIAL |
PCT/US2009065147 |
2009-11-19 |
WO2010059823A3 |
2010-08-26 |
NAIR BALAKRISHNAN G; HENDERSON BRETT T; PACE THOMAS K; WANG GANGQIANG |
A sensor (20, 24) for monitoring concentration of a constituent in a gas may include an ionically conductive layer (34, 36, 38, 38A) and a sensing electrode (50, 50A) coupled to the ionically conductive layer. The sensing electrode may be exposed to a gas. The sensor may also include a reference electrode (40, 40A) that is exposed to the gas and made of substantially a same material as the sensing electrode. |
114 |
METHOD OF MAKING REACTIVE MULTILAYER FOIL AND RESULTING PRODUCT |
PCT/US0113962 |
2001-05-01 |
WO0183623A3 |
2002-03-21 |
WIEHS TIMOTHY P; REISS MICHAEL |
In accordance with the invention a reactive multilayer foil is fabricated by providing an assembly (stack or multilayer) of reactive layers, inserting the assembly into a jacket, deforming the jacketed assembly to reduce its cross sectional area, flattening the jacketed assembly into a sheet, and then removing the jacket. Advantageously, the assembly is wound into a cylinder before insertion into the jacket, and the jacketed assembly is cooled to a temperature below 100 DEG C during deforming. The resulting multilayer foil is advantageous as a freestanding reactive foil for use in bonding, ignition or propulsion. |
115 |
REACTIVE MULTILAYER STRUCTURES FOR EASE OF PROCESSING AND ENHANCED DUCTILITY |
PCT/US0114052 |
2001-05-01 |
WO0183205A3 |
2002-03-14 |
WEIHS TIMOTHY P; REISS MICHAEL; KNIO OMAR; BLOBAUM KERRI J |
In accordance with the invention, a reactive multilayer structure comprises alternating layers of materials that exothermically react by a self-propagating reduction/oxidation reaction or by a self-propagating reduction/formation reaction. This combination of a reduction reaction and either an oxidation of formation reaction can lead to ductile reaction products and is frequently accompanied by the generation of large amounts of heat. As compared with conventional multilayer foils, the new multilayer structures are easier to fabricate, easier to handle, and produce more reliable bonds. |
116 |
METHOD FOR JOINING MATERIALS AND PLATE AND SHAFT DEVICE AND MULTI-LAYER PLATE FORMED THEREWITH |
PCT/US2012067491 |
2012-11-30 |
WO2013082564A3 |
2013-07-25 |
ELLIOT ALFRED GRANT; ELLIOT BRENT DONALD ALFRED; BALMA FRANK; SCHUSTER RICHARD ERICH; REX DENNIS GEORGE; VEYTSER ALEXANDER |
A method for joining first and second ceramic pieces comprising brazing a continuous layer of joining material between the two pieces. The wetting and flow of the joining material can be controlled by among other factors the selection of the joining material, the joining temperature, the time at temperature and the joining atmosphere. The pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material can be adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. |
117 |
METHOD OF MANUFACTURING A TUBULAR INSULATING DEVICE AND CORRESPONDING DEVICE |
PCT/FR2008001397 |
2008-10-07 |
WO2009080915A3 |
2009-08-20 |
LECLERCQ BERANGERE; BERNARD OLIVIER; POTIER ALEXANDRE |
In the method, an insulating material (2) is fed in and said insulating material (2) is shaped by superposing a plurality of N layers Ci (3) of the said insulating material (2). It is characterized in that: a) for each layer Ci (3), a plurality of ni axial insulating elements Ei (4) precut from the said insulating material (2) is formed, b) a rough form (5) of the said tubular insulating device (1) is formed by: b1) using an adhesive (6) to assemble the Ni elements Ei (4) of each layer Ci (3) which are juxtaposed along a plurality of joining zones Ji (30) so that the plurality of joining zones Ji+1 of a layer Ci+1 is offset relative to the plurality of joining zones Ji of the adjacent layer Ci; b2) then by polymerizing the said adhesive (6); c) subjecting the said tubular element rough form (5) to a heat treatment. Advantages: economical method that makes it possible to obtain a device of high mechanical strength. |
118 |
JUNCTION PROCESS FOR A CERAMIC MATERIAL AND A METALLIC MATERIAL WITH THE INTERPOSITION OF A TRANSITION MATERIAL |
PCT/IB2005052434 |
2005-07-20 |
WO2006024971A3 |
2006-07-13 |
LIBERA STEFANO; VISCA ELISEO |
The invention refers to a method useful for obtaining junctions having high qualities of mechanical resistance and capabilities of heat conduction between materials with different physical properties, and in particular ceramic/metal junctions or ceramic/metal composites in which the different thermal expansion coefficient entails remarkable stresses in the interface both during the junction process and their industrial application. The issues solved with the proposed method are the metal's difficulty of wetting the surfaces to be coupled and the general low mechanical resistance to tensile stress of ceramics or ceramic compounds. The first issue is solved with the application of a Titanium-base alloy that, by combining with the ceramic at a surface level enables metal to wet the surface. The second issue is solved by increasing the specific surface of the ceramic or compound, machining it through long-pitch multi-start thread. |
119 |
MULTI-LAYER CERAMIC COMPOSITE |
PCT/DE0303834 |
2003-11-19 |
WO2004071631A3 |
2004-12-23 |
EHLEN FRANK; BINKLE OLAF; NONNINGER RALPH |
The invention relates to a method for production of a ceramic composite, whereby a second green layer is applied to a green support layer, the ceramic particles of which have a size of x <= 100 nm. On common sintering of the green layers the second layer contracts to give a defect-free, fine-pored functional layer. |
120 |
METHOD FOR PRODUCING A CERAMIC SUBSTRATE |
PCT/DE0202963 |
2002-08-13 |
WO03028085A2 |
2003-04-03 |
HOFFMANN CHRISTIAN; AICHHOLZER KLAUS-DIETER |
The invention relates to a method for producing a ceramic substrate (1), comprising the following steps: a) a base body (2) is prepared, said base body comprising a stack (2a) of superimposed layers (3) containing an unsintered ceramic material, b) a constraining layer (4) is formed by pressing a powder (5) onto the surface (6) of the uppermost layer (7) of the stack (2a), c) the stack (2a) is sintered, and d) the constraining layer (4) is removed. |