| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 101 | Metal-ceramic structure with intermediate high temperature reaction barrier layer | US353580 | 1989-05-18 | US5200241A | 1993-04-06 | Herman F. Nied; Richard L. Mehan |
| A Si--SiC ceramic layer is bonded to a non-porous SiC substrate with the Si etched from the layer to form a relatively porous surface on the otherwise non-porous high strength SiC substrate. A quartz layer is softened by heating and forced into the pores of the porous layer to form a mechanical bond to the SiC substrate. A refractory metal layer is bonded to the quartz layer to complete the joint. A refractory metal support component is then bonded to the refractory layer whereby the quartz serves as a high strength, high temperature reaction barrier between the metal of the refractory layer and the silicon of the SiC substrate. | ||||||
| 102 | Method of bonding a sheet of metal, such as copper, on an aluminum nitride substrate | US658268 | 1991-02-20 | US5150830A | 1992-09-29 | Jannick Guinet; Jean-Claude Hubert; Jean Jarrige; Jacques Mexmain; Jean-Pascal Michelet |
| A method of bonding a sheet of metal such as copper on a substrate of aluminum nitride, the method comprising the following steps known per se: i) growing a layer of alumina on the aluminum nitride substrate by means of heat treatment; and ii) placing the sheet of metal on the alumina layer and then bonding them together; the method being wherein alumina-growing step i) is performed under a controlled oxidizing atmosphere which is free from moisture. | ||||||
| 103 | Living hard tissue replacement, its preparation | US545599 | 1990-06-29 | US5125971A | 1992-06-30 | Tohru Nonami; Nobuo Yasui |
| A living hard tissue replacement is prepared by superplastic forming a ceramic material which contains CaO, SiO.sub.2, and MgO, is substantially free of calcium phosphate, but capable of forming a calcium phosphate base compound upon contact with phosphorus-containing water. A replacement is also prepared by superplastic forming a sintered composite body comprising a calcium phosphate base ceramic matrix and an inorganic filler dispersed therein. Both the replacements are suitable as artificial dental roots and crowns. | ||||||
| 104 | Surface bonding of ceramic bodies | US327022 | 1989-03-22 | US4960736A | 1990-10-02 | Stanley J. Luxzsz; Andrew W. Urquhart |
| Ceramic bodies are bonded together via a layer of an oxidation reaction product of a molten metal, which metal is present in one or both of the ceramic bodies prior to bonding. At least one of the ceramic bodies comprises a ceramic product formed by the oxidation reaction of molten parent metal (e.g., alumina from molten aluminum) and grown as molten metal is transported through, and oxidized on the surface of, its own oxidation product. One or both of the ceramic bodies used in the bonding process contains surface-accessible channels of residual metal, i.e., metal channels which have resulted from molten-metal transport during the ceramic growth process. When the suitably assembled ceramic bodies are heated in the presence of an oxidant at a temperature above the melting point of the residual metal, molten metal at the surface of at least one of the ceramic bodies reacts with the oxidant so to form a layer of oxidation reaction product which may or may not incorporate at least one filler material. This layer of oxidation reaction product continues to grow between the facing surfaces of the assembled ceramic bodies until the oxidation reaction product forms a bond between the ceramic bodies. | ||||||
| 105 | Surface bonding of ceramic bodies | US39510 | 1987-04-17 | US4824008A | 1989-04-25 | Stanley J. Luszcz; Andrew W. Urquhart; Marc S. Newkirk |
| Ceramic bodies are bonded together via a layer of an oxidation reaction product of a molten metal, which metal is present in one or both of the ceramic bodies prior to bonding. At least one of the ceramic bodies comprises a ceramic product formed by the oxidation reaction of molten parent metal (e.g., alumina from molten aluminum) and grown as molten metal is transported through, and oxidized on the surface of, its own oxidation product. One or both of the ceramic bodies used in the bonding process contains surface-accessible channels of residual metal, i.e., metal channels which have resulted from molten-metal transport during the ceramic growth process. When the suitably assembled ceramic bodies are heated in an oxidizing atmosphere at a temperature above the melting point of the residual metal, molten metal at the surface of the ceramic body reacts with the atmosphereic oxidant so as to bond the facing surfaces together by a layer of the oxidation reaction product of the molten metal formed therebetween. | ||||||
| 106 | Method for directly bonding ceramic and metal members and laminated body of the same | US697874 | 1985-02-04 | US4693409A | 1987-09-15 | Nobuyuki Mizunoya; Hajime Kohama; Yasuyuki Sugiura |
| A laminated body comprising a ceramic member and a metal member, and a method of forming the laminated body are described. The laminated body is characterized in that the ceramic member contains in its surface portion a bonding agent and the metal member is directly bonded to the surface of the ceramic member. The method of forming the laminated body is characterized in that a bonding agent-containing layer is first formed in the surface of the ceramic member and then the bonding agent-containing layer is heated while being contacted with the metal member. | ||||||
| 107 | Process for the direct bonding of metal to ceramics | US625722 | 1984-06-28 | US4591401A | 1986-05-27 | Arno Neidig; Klaus Bunk; Karl-Heinz Thiele; Georg Wahl; Jens Gobrecht |
| In directly bonding a metal to ceramics, in accordance with the invention, that surface of a metal component which is to be bonded by heating to a ceramic substrate is provided with parallel-running grooves before the preoxidation. The grooves make it possible to optimize the quantity of oxygen available at the bonding location and provide good flow behavior of the melt. As a result, a bond with good adhesion is obtained. Moreover, there is no formation of a thicker oxide layer on the free smooth surface of the metal component. | ||||||
| 108 | Method for fabricating a seal between a ceramic and a metal alloy | US286422 | 1981-07-24 | US4398980A | 1983-08-16 | Paul V. Kelsey, Jr.; William T. Siegel |
| A method of fabricating a seal between a ceramic and an alloy comprising the steps of prefiring the alloy in an atmosphere with a very low partial pressure of oxygen, firing the assembled alloy and ceramic in air, and gradually cooling the fired assembly to avoid the formation of thermal stress in the ceramic. The method forms a bond between the alloy and the ceramic capable of withstanding the environment of a pressurized water reactor and suitable for use in an electrical conductivity sensitive liquid level transducer. | ||||||
| 109 | Double side cooled, pressure mounted semiconductor package and process for the manufacture thereof | US696899 | 1976-06-17 | US4129243A | 1978-12-12 | Dominic A. Cusano; James A. Loughran; Yen S. E. Sun |
| Disclosed is a double side cooled, pressure mounted semiconductor package and a method for the manufacture thereof. The package is formed by directly bonding upper and lower metal contact assemblies to an annular ceramic housing. Assembly is simplified if at least one contact assembly comprises two parts applied sequentially. An annular flange having a central opening approximately the size of the central opening in the annular housing and having an outside diameter larger than the outside diameter of the ceramic housing is direct bonded to one end of the housing simultaneously with a lower semiconductor contact. After a conventional semiconductor pellet is positioned in the housing, the second part, a metal contact disc with an outside diameter approximately equaling the outside diameter of the flange, is positioned thereover. Finally, the flange and the disc are welded around their peripheries. | ||||||
| 110 | Direct bonding of metals to ceramics and metals | US600300 | 1975-07-30 | US3994430A | 1976-11-30 | Dominic A. Cusano; James A. Loughran; Yen Sheng Edmund Sun |
| Disclosed is a method of bonding metals to substrates such as ceramics or metals. A bonding agent forms a eutectic alloy with the metal to provide bonding. Several methods of supplying the bonding agent to the system are disclosed. However, regardless of which method of introducing the bonding agent into the system is employed, the quantity of the bonding agent is carefully controlled so that the compound in the region of the bond is hypoeutectic. To form the bond, the metal and the substrate are placed adjacent each other and the bonding agent is introduced into the system. The system is then heated to a temperature between the eutectic temperature and the melting point of the metal for a preselected time. The system is then cooled to form a bond. The heating is carried out in an inert atmosphere or a vacuum. | ||||||
| 111 | Method for bonding metal to ceramic | US44789074 | 1974-03-04 | US3911553A | 1975-10-14 | BURGESS JAMES F; NEUGEBAUER CONSTANTINE A |
| An improved method of bonding metal to a ceramic is described in which the metal is shaped, surface treated, and curved prior to heating the metal to form a eutectic bond between the metal and the ceramic. The surface treatment comprises heating the metal in a reactive atmosphere, e.g., in an oxidizing atmosphere to produce an oxide layer. The surface treatment is carried out at a temperature lower than the metal-metal oxide eutectic temperature.
|
||||||
| 112 | Process of bonding glass or ceramic to metal | US10507061 | 1961-04-24 | US3220815A | 1965-11-30 | WILLIAM MCMILLAN PETER; PARDAM HODGSON BRIAN; GRAHAM PARTRIDGE |
| 113 | 鉄溶湯用炭化珪素質耐火ブロックおよびその製造方法 | JP2015042455 | 2015-03-04 | JP6415356B2 | 2018-10-31 | 柳 憲治 |
| 114 | ハニカム構造体、排ガス浄化用ハニカムフィルタ及び排ガス浄化装置 | JP2014507209 | 2012-03-29 | JP5990572B2 | 2016-09-14 | 太田 弘平; 島田 將平; 伊藤 寿英 |
| 115 | 回路基板、及びそれを用いた半導体装置 | JP2012554801 | 2012-01-24 | JP5677685B2 | 2015-02-25 | 俊章 守田; 英一 井出; 雄亮 保田; 拓司 安藤 |
| 116 | 酸化物系セラミックス回路基板の製造方法および酸化物系セラミックス回路基板 | JP2013525748 | 2012-07-26 | JPWO2013015355A1 | 2015-02-23 | 隆之 那波; 佐藤 英樹; 英樹 佐藤; 星野 政則; 政則 星野; 裕 小森田 |
| 酸化物系セラミックス基板上に銅板を配置して積層体を形成する工程と、得られた積層体を加熱する工程とにより、酸化物系セラミックス基板と銅板とを一体に接合する酸化物系セラミックス回路基板の接合方法において、上記加熱する工程は、1065〜1085℃の間に加熱温度の極大値を有する第一加熱領域で積層体を加熱する工程と、次に1000〜1050℃の間に加熱温度の極小値を有する第二加熱領域で積層体を加熱する工程と、さらに1065〜1120℃の間に加熱温度の極大値を有する第三加熱領域で積層体を加熱して接合体を形成する工程とを有し、その後接合体を冷却領域で冷却することを特徴とする。上記構成によれば、耐熱サイクル(TCT)特性が優れた酸化物系セラミックス回路基板が得られる。 | ||||||
| 117 | セラミックス回路基板 | JP2013524003 | 2012-07-13 | JPWO2013008920A1 | 2015-02-23 | 星野 政則; 政則 星野; 中山 憲隆; 憲隆 中山; 隆之 那波; 佐藤 英樹; 英樹 佐藤; 裕 小森田 |
| 本発明のセラミックス回路基板は、アルミナ基板上に金属回路板が接合されたセラミックス回路基板において、前記アルミナ基板は、アルミナAl2O3を99.5質量%以上、および焼結前に配合された焼結助剤から生成された焼結助剤由来成分を0.5質量%未満含み、前記焼結助剤由来成分はナトリウムを含む無機酸化物であり、前記焼結助剤由来成分中のナトリウムは酸化ナトリウムNa2Oに換算した質量で前記アルミナ基板100質量%中に0.001〜0.1質量%含まれ、前記アルミナ基板は、ボイドの最大径が12μm以下であり、ボイド平均径が10μm以下であり、ビッカース硬度が1500以上である。 | ||||||
| 118 | 金属・セラミック基板およびそのような金属・セラミック基板の製造方法 | JP2014543770 | 2013-02-13 | JP2014534946A | 2014-12-25 | メイヤー，アンドリース; ヴェーエ，クリストフ; シュルツ−ハーダー，ユルゲン; シュミット，カルステン |
| 本発明は、少なくとも1つのセラミック層(2)を備える金属・セラミック基板およびその製造方法であって、前記セラミック層(2)が、第1の表面側(2a)に少なくとも1つの第1のメタライゼーション(3)を、前記第1の表面側(2a)に相対する第2の表面側(2b)に第2のメタライゼーション(4)を備えており、前記第1のメタライゼーション(3)が、銅または銅合金からなる箔または層により形成されており、また、「銅直接接合」法を用いて、前記セラミック層(2)の前記第1の表面側(2a)と接合されている金属・セラミック基板およびその製造方法に関する。特に有利には、前記第2のメタライゼーション(4)が、アルミニウムまたはアルミニウム合金の層により形成されている。【選択図】図1 | ||||||
| 119 | Honeycomb structured body and exhaust gas purifying apparatus | JP2011225193 | 2011-10-12 | JP2012102004A | 2012-05-31 | IWAKURA MISAKO; OTA KOHEI; ITO TOSHIHIDE |
| PROBLEM TO BE SOLVED: To provide a honeycomb structured body hardly generating a crack even in a thermal shock such as when temperature is abruptly elevated.SOLUTION: The honeycomb structured body includes a porous silicon carbide honeycomb fired body juxtaposed in longitudinal direction with a large number of cells separatedly by cell walls, a silicon-containing oxide layer is formed on a surface of the silicon carbide honeycomb fired body, and a thickness of the oxide layer measured using an X-ray photoelectron spectroscopy (XPS) is 5 to 100 nm. | ||||||
| 120 | Assembly of ceramics and alloys | JP2001304768 | 2001-10-01 | JP3969987B2 | 2007-09-05 | 益 島田; 正美 木村 |
QQ群二维码
意见反馈
意见反馈