| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 141 | セラミックス回路基板 | JP2013524002 | 2012-07-13 | JP5972875B2 | 2016-08-17 | 星野 政則; 佐藤 英樹; 小森田 裕; 中山 憲隆; 那波 隆之 |
| 142 | Metal - a method of manufacturing a ceramic matrix hybrid composite structure, a method of manufacturing a composite structure, and a laminated composite structure | JP2009053787 | 2009-03-06 | JP5550245B2 | 2014-07-16 | ブッダデブ・チャクラバーティ; レアンネ・レーマン; アリ・ユーセフィアニ; ウィリアム・ピー・キース |
| 143 | Method for producing a ceramic substrate having both surfaces is a metal | JP2011131741 | 2011-06-14 | JP5468569B2 | 2014-04-09 | ヴァイデナウアー ヴァーナー; シュパン トーマス; クノール ハイコ |
| 144 | Substrate for power module, substrate for power module having heat sink, and power module | JP2013046960 | 2013-03-08 | JP2013229579A | 2013-11-07 | NAGATOMO YOSHIYUKI; TERASAKI NOBUYUKI; KUROMITSU YOSHIO |
| PROBLEM TO BE SOLVED: To provide a substrate for a power module with high reliability that allows promoting the diffusion of heat from a heat-generating body such as an electronic component mounted on a circuit layer, has excellent power-cycle characteristics, and allows preventing the occurrence of a crack of an insulating substrate at the time of cold cycle load.SOLUTION: A substrate for a power module 10 includes an insulating substrate 11, a circuit layer 12 formed on one surface of the insulating substrate 11, and a metal layer 13 formed on the other surface of the insulating substrate 11. The circuit layer 12 is composed of copper or copper alloy, and one surface of the circuit layer 12 is used as a mounting surface on which an electronic component 3 is mounted. The metal layer 13 is configured by bonding aluminum plates composed of aluminum and aluminum alloy. The thickness tof the circuit layer 12 has a range of 0.1 mm≤t≤0.6 mm, and the thickness tof the metal layer 13 has a range of 0.5 mm≤t≤6 mm. The relationship between the thickness tof the circuit layer 12 and the thickness tof the metal layer 13 satisfies the following formula: t<t. | ||||||
| 145 | Method for manufacturing double-sided metallized ceramic substrate | JP2011131741 | 2011-06-14 | JP2012001430A | 2012-01-05 | WEIDENAUER WERNER; SPANN THOMAS; KNOLL HEIKO |
| PROBLEM TO BE SOLVED: To provide simple and economically-implementable method for the manufacture of double-sided metallized metal-ceramic substrates using a direct-bonding process.SOLUTION: An arrangement consisting of a first metal plate 1 and a second metal plate 3 and a ceramic substrate 2 arranged between the first and second metal plates is laid on a carrier 4, and the arrangement is bonded by heating to obtain the double-sided metallized ceramic substrate. The carrier 4 is structured to form a plurality of contact points 4B for the arrangement to be placed on the upper side of the carrier 4 which faces the arrangement, and the carrier 4 has a plurality of projecting assemblages 4A with a tapered shape toward the arrangement on the upper face facing the arrangement. | ||||||
| 146 | Ceramics sintered body and a semiconductor device substrate using the same | JP2010516320 | 2010-04-02 | JP4717960B2 | 2011-07-06 | 純史 大上; 敬幸 小松; 雅則 長廣 |
| A sintered ceramic which has a high mechanical strength and excellent heat dissipation properties and which, when bonded to a copper sheet, is less apt to generate voids at the interface therebetween. The sintered ceramic (1) is for use as an insulating substrate on which an electronic component is to be mounted. The sintered ceramic is characterized by being produced from a powder material comprising alumina as the main component, partially stabilized zirconia, and magnesia, the upper limit of the content of the partially stabilized zirconia being 30 wt.% relative to the total weight of the powder material, and the content of the magnesia being in the range of 0.05-0.50 wt.% relative to the total weight of the powder material. The sintered ceramic is further characterized in that 80-100% of the zirconia crystals contained in the sintered ceramic have a tetragonal phase. | ||||||
| 147 | Metal - ceramic compound material, in particular metal - ceramic substrate and metal - a method of manufacturing a ceramic compound material, metal was produced especially in this way - a ceramic substrate | JP2003534362 | 2002-09-05 | JP4435567B2 | 2010-03-17 | シュルツ−ハーダー，ユルゲン |
| 148 | Metal/ceramic joined product and method of manufacturing the same | JP2004168254 | 2004-06-07 | JP2005343768A | 2005-12-15 | YAMADA KATSUNORI; KOBAYASHI TAKAO; KUZUOKA KAORU |
| <P>PROBLEM TO BE SOLVED: To improve the heat resistance and/or oxidation resistance, and durability of a metallic material in a metal/ceramic joined product to be used under a high temperature oxidation atmosphere. <P>SOLUTION: The metal/ceramic joined product is provided with a ceramic material, a metallic thin layer joined to the surface of the ceramic material and a surface layer formed on the surface of the metallic thin layer and having a function to suppress the diffusion of carbon, nitrogen and/or oxygen to the metallic thin layer. In such a case, the metallic thin layer is made from a material containing a 1st oxidation film-forming element capable of forming a 1st oxidation film having the function to suppress the diffusion of carbon and/or nitrogen to the metallic thin layer and the surface layer is preferably the 1st oxidation film obtained by oxidation-treating the surface of the metallic thin layer before joining. The content of a 2nd oxidation film-forming element having the function to suppress the diffusion of oxygen to the metallic thin layer in the surface layer can be larger than that in the metallic metallic thin layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI | ||||||
| 149 | Joined body of ceramics and metal | JP2001304768 | 2001-10-01 | JP2003112981A | 2003-04-18 | KIMURA MASAMI; SHIMADA SUSUMU |
| PROBLEM TO BE SOLVED: To directly joining a whole solid solution type alloy to a ceramic material or to directly join a copper alloy without degenerating the alloy to provide an electronic member for a resistance. SOLUTION: The whole solid solution type alloy is directly disposed on the ceramic material and joined by heating at a temperature lower than the melting point in a non-oxidative atmosphere. Further, by directly joining Manganin (R), constantan, or the like, which is a copper alloy for a resistance to the ceramic substrate, the electronic member for the resistance can be easily obtained at a low cost without degenerating the alloy. | ||||||
| 150 | Bonding method of the ceramic body | JP23197887 | 1987-09-16 | JP2505216B2 | 1996-06-05 | SUTANREI JEI RASU; ANDORYUU DABURYU AAKAATO; MAAKU ESU NYUUKAAKU |
| 151 | Bonding of copper to non-oxide ceramic substrate for power electronics | JP15929993 | 1993-06-29 | JPH0692748A | 1994-04-05 | ROORAN KURIO; ARAN PUTEIBON |
| PURPOSE: To easily bond copper to a non-oxide ceramic substrate surface by irradiating the non-oxide ceramic surface with a laser beam by as much as a specific thickness, then using a DBC technique. CONSTITUTION: This method for bonding the heat conductive and electrically insulating power electronics substrate made of the non-oxide ceramic selected from AlN, SiC and BN and the copper is executed in the following manner: Namely, the method consists in oxidizing the surface of the substrate, then using the DBC (direct bonding) technique. The surface oxidation treatment of the substrate described above is executed by treating the surface with the laser beam by as much as the thickness of 0.1 to 3 μm. In this method, only the part to be DBC bonded is subjected to the oxidation treatment and is treated in the adjusted thickness. The substrate surface is advantageous preheated up to about 200 to 600°C before the oxidation treatment of the surface in order to avoid the danger of the damage by the crack of the oxidized layer obtd. by this treatment. COPYRIGHT: (C)1994,JPO | ||||||
| 152 | JPH0427195B2 - | JP9654189 | 1989-04-18 | JPH0427195B2 | 1992-05-11 | DOMINIKU ANSONII KUSANO; JEMUSU ANSONII RAUFURAN; YUENNSHENGU EDOMONDO SAN |
| 153 | Metal-ceramic structure with high temperature reaction barrier layer at middle | JP12709390 | 1990-05-18 | JPH0388783A | 1991-04-15 | HAAMAN FUREDERITSUKU NIIDO; RICHIYAADO ROIDO MEHAN |
| PURPOSE: To improve the chemical inactivity to corrosive and oxidizing environment and the regidity under high temp. in a metal-ceramic structure by bonding a silicon-containing ceramic base body having approximated coefficient of thermal expansion to a glass layer and metallic member through the glass layer having high softening point. CONSTITUTION: The above metal-ceramic structure is formed of the silicon- containing ceramic base body 14 glass layers 24, 28 and metallic layer 16. The glass layers 24, 28 are composed of a dissolved qualtz and a borosilicate glass and fixed to the above base body 14. Further, the above metallic member 16 is bonded with the glass layers 24, 28 and composed of high m.p. metal having 1000°C m.p. Then, the above base body 14 glass layers 24, 28 and member 16 have the approximate coefficient of thermal expansion and the stress breakage of the structure caused by heat cycle is prevented. COPYRIGHT: (C)1991,JPO | ||||||
| 154 | JPH0314795B2 - | JP14894381 | 1981-09-22 | JPH0314795B2 | 1991-02-27 | ARUNO NAIDEIHI; DEIITOMARU BERUNTO; GEORUKU UAARU; MARUKU UITOMAA |
| 155 | JPS644991B2 - | JP2104580 | 1980-02-21 | JPS644991B2 | 1989-01-27 | HAWAADO DAGURASU BUREAA; MOOTON EDOIN MIRUBAAGU |
| 156 | Method of joining ceramic bodies | JP23197887 | 1987-09-16 | JPS6385064A | 1988-04-15 | SUTANREI JIEI RASU; ANDORIYUU DABURIYU AAKAATO; MAAKU ESU NIYUUKAAKU |
| 157 | Metal-ceramic composite element and method of producing same | JP14595185 | 1985-07-04 | JPS6126231A | 1986-02-05 | IENSU GOBUREHITO; ARUNO NAIDEIHI |
| 158 | JPS6028785B2 - | JP2569075 | 1975-03-04 | JPS6028785B2 | 1985-07-06 | JEEMUSU FURANSHISU BAAJEIZU; KONSUTANCHIN AROIZU NYUUJIBAUAA |
| 159 | Ceramic structure and manufacture | JP6367683 | 1983-04-13 | JPS59190279A | 1984-10-29 | TANAKA SHIYUNICHIROU; MIZUNOYA NOBUYUKI; ABE SHIGEO |
| 160 | Method of joining silicon nitride base ceramic article | JP2104580 | 1980-02-21 | JPS55130865A | 1980-10-11 | HAWAADO DAGURASU BUREAA; MOOTON EDOUIN MIRUBAAGU |
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