| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 81 | Method for the manufacture of double-sided metalized ceramic substrates | US13158190 | 2011-06-10 | US08876996B2 | 2014-11-04 | Werner Weidenauer; Thomas Spann; Heiko Knoll |
| The invention relates to a method for the manufacture of double-sided metallized ceramic substrates according to the direct-bonding process. The method enables a ceramic substrate to be bonded to a metal plate or foil on the upper side and the underside in only one process sequence. The composite to be bonded is located on a specially designed carrier structured on the upper side with a plurality of contact points. After the bonding process the composite of metal plates and ceramic substrate can be detached from the carrier free of any residue. | ||||||
| 82 | POWER MODULE SUBSTRATE, POWER MODULE SUBSTRATE WITH HEAT SINK, POWER MODULE, AND METHOD OF MANUFACTURING POWER MODULE SUBSTRATE | US14238097 | 2012-08-10 | US20140192486A1 | 2014-07-10 | Yoshirou Kuromitsu; Yoshiyuki Nagatomo; Nobuyuki Terasaki; Toshio Sakamoto; Kazunari Maki; Hiroyuki Mori; Isao Arai |
| A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities. | ||||||
| 83 | Method for the production of a metal-ceramic substrate | US11631639 | 2005-04-23 | US08683682B2 | 2014-04-01 | Jurgen Schulz-Harder |
| Disclosed is a method for producing a metal-ceramic substrate. According to said method, a metal layer is applied to at least one face of a ceramic substrate or a ceramic layer by means of a direct bonding process, and the metal-ceramic substrate or partial substrate is aftertreated in a subsequent step at a gas pressure (aftertreatment pressure) ranging approximately between 400 and 2000 bar and an aftertreatment temperature ranging approximately. | ||||||
| 84 | HONEYCOMB STRUCTURE AND METHOD OF MANUFACTURING HONEYCOMB STRUCTURE | US13337153 | 2011-12-26 | US20120264596A1 | 2012-10-18 | Yoshihiro KOGA |
| A honeycomb structure includes a substantially pillar-shaped honeycomb unit having cells defined by cell walls. The cell walls include silicon carbide particles having a nitrogen-containing layer provided on surfaces of the silicon carbide particles. A method of manufacturing a honeycomb structure includes preparing paste containing silicon carbide particles. The paste is molded to form a honeycomb molded body. The honeycomb molded body is fired in an inert atmosphere containing no nitrogen to obtain a substantially pillar-shaped honeycomb unit having cells defined by cell walls. The honeycomb unit is heated in an environment containing nitrogen to provide a nitrogen-containing layer on surfaces of the silicon carbide particles forming the cell walls. | ||||||
| 85 | HONEYCOMB STRUCTURE AND EXHAUST GAS PURIFYING APPARATUS | US13271231 | 2011-10-12 | US20120093695A1 | 2012-04-19 | Misako IWAKURA; Kohei Ota; Toshihide Ito |
| A honeycomb structure includes a porous silicon carbide honeycomb fired body and a silicon-containing oxide layer. The porous silicon carbide honeycomb fired body has at least one cell wall defining a plurality of cells extending along a longitudinal direction of the silicon carbide honeycomb fired body. The plurality of cells is provided in parallel with one another. The silicon carbide honeycomb fired body contains silicon carbide particles. The silicon-containing oxide layer is provided on a surface of each of the silicon carbide particles. The silicon-containing oxide layer has a thickness of from about 5 nm to about 100 nm measured with an X-ray photoelectron spectroscopy. | ||||||
| 86 | Method of manufacturing ceramic/metal composite structure | US12029340 | 2008-02-11 | US07806311B2 | 2010-10-05 | Wei-Hsing Tuan |
| A method of manufacturing a ceramic/metal composite structure includes the steps of: performing a multi-stage pre-oxidizing process on the copper sheet; placing the copper sheet on a ceramic substrate; and heating the copper sheet and the ceramic substrate to a joining temperature to join the copper sheet and the ceramic substrate together to enhance interface strength between the copper sheet and the ceramic substrate according to the multi-stage pre-oxidizing process. The multi-stage pre-oxidizing process includes a first stage of pre-oxidizing process and a second stage of pre-oxidizing process, and the first and second stages of pre-oxidizing processes are performed in atmospheres with different oxygen partial pressures and at different temperatures. | ||||||
| 87 | Method for the production of a metal-ceramic substrate | US11631639 | 2005-04-23 | US20090232972A1 | 2009-09-17 | Jurgen Schulz-Harder |
| Disclosed is a method for producing a metal-ceramic substrate. According to said method, a metal layer is applied to at least one face of a ceramic substrate or a ceramic layer by means of a direct bonding process, and the metal-ceramic substrate or partial substrate is aftertreated in a subsequent step at a gas pressure (aftertreatment pressure) ranging approximately between 400 and 2000 bar and an aftertreatment temperature ranging approximately. | ||||||
| 88 | Method for the Production of a Metal-Ceramic Substrate or Copper-Ceramic Substrate, and Support to be Used in Said Method | US11666426 | 2005-05-05 | US20070261778A1 | 2007-11-15 | Jurgen Schulz-Harder; Andreas Frischmann; Alexander Rogg; Karl Exel |
| A method is disclosed for producing metal-ceramic substrates that are metallized on both sides by using the direct bonding process. According to the method, at least one DCB stack made from first and a second metal layer and a ceramic layer located between said metal layers is formed on a separating layer of a support by heating to a direct bonding temperature. At least one of the metal layers rests against the separating layer during the bonding process, said separating layer being composed of a porous layer or coating made of a separating layer material from the group comprising mullite, Al2O3, TiO3, ZrO2, MgO, CaO CaCO2 or a mixture of at least two of said materials. | ||||||
| 89 | Silicon Carbide Bonding | US11578119 | 2005-04-06 | US20070221326A1 | 2007-09-27 | Sheila Rowan; James Hough; Eoin Eliffe |
| A method for bonding at least two parts, at least one part comprising silicon carbide, the method comprising forming a layer of silica on the silicon carbide surface,and applying to it a bonding solution that includes hydroxide ions. Once this is done, the part that is to be bonded to the silicon carbide is moved into contact with the solution coated silica surface. | ||||||
| 90 | PROCESS FOR THE MANUFACTURE OF METAL-CERAMIC COMPOUND MATERIAL IN PARTICULAR METAL-CERAMIC SUBSTRATES AND METAL-CERAMIC COMPOUND MATERIAL ESPECIALLY METAL-CERAMIC SUBSTRATE MANUFACTURED ACCORDING TO THIS PROCESS | US10416540 | 2002-09-05 | US07036711B2 | 2006-05-02 | Jurgen Schulz-Harder |
| In a process for the manufacture of metal-ceramic compound material, especially metal-ceramic substrates, bonding compounds in the form of a plate-shaped ceramic substrate and an oxidized metal foil are bonded together by means of heating to a processing temperature in a protective gas atmosphere. For this purpose, the bonding components are placed in a reaction space formed within a capsule, which (space) is separated from the outer protective gas atmosphere by the capsule or in connection with the outer protective gas atmosphere only by means of a small opening. | ||||||
| 91 | Gas-tight metal/ceramic or metal/metal seals for applications in high temperature electrochemical devices and method of making | US10260630 | 2002-09-27 | US06843406B2 | 2005-01-18 | Zhenguo Yang; Christopher Andrew Coyle; Suresh Baskaran; Lawrence Andrew Chick |
| A method of joining metal and metal, or metal and ceramic parts, wherein a first metal part is selected and then processed to form a bond coat that will effectively bond to a sealing material which in turn bonds to a second metal or ceramic part without degrading under the operating conditions of electrochemical devices. Preferred first metal parts include alumina forming alloys from the group consisting of ferritic stainless steels (such as Fecralloys), austinetic stainless steels, and superalloys, and chromia forming alloys formed of ferritic stainless steels. In the case of chromia forming ferritic stainless steels, this bond coat consists of a thin layer of alumina formed on the surface, with a diffusion layer between the first metal part and this thin layer. The bond coat provides a good bonding surface for a sealing layer of glass, braze or combinations thereof, while at the same time the diffusion layer provides a durable bond between the thin alumina layer and the first metal part. In the case of alumina forming alloys, the bond coat consists of cauliflower-like growths of an aluminum oxide nodules embedded in the surface of the alumina forming alloys. | ||||||
| 92 | Process for the manufacture of metal-ceramic compound material in particular metal-ceramic substrates and metal-ceramic compound material especially metal-ceramic substrate manufactured according to this process | US10416540 | 2003-09-11 | US20040026482A1 | 2004-02-12 | Jurgen Schulz-Harder |
| In a process for the manufacture of metal-ceramic compound material, especially metal-ceramic substrates, bonding components in the form of a plate-shaped ceramic substrate and an oxidized metal foil are bonded together by means of heating to a processing temperature in a protective gas atmosphere. For this purpose, the bonding components are placed in a reaction space formed within a capsule, which (space) is separated from the outer protective gas atmosphere by the capsule or in connection with the outer protective gas atmosphere only by means of a small opening. | ||||||
| 93 | Metal/ceramic bonding article and method for producing same | US10254558 | 2002-09-25 | US20030062399A1 | 2003-04-03 | Masami Kimura; Susumu Shimada |
| There is provided a method for producing a metal/ceramic bonding article, the method including the steps of: arranging a metal plate 12 of an overall-rate solid solution type alloy on a ceramic substrate 10; and heating the metal plate 12 and the ceramic substrate 10 in a non-oxidizing atmosphere at a temperature of lower than a melting point of the alloy to bond the metal plate 12 directly to the ceramic substrate 10. According to this method, it is possible to easily bond an alloy plate directly to a ceramic substrate, and it is possible to inexpensively provide an electronic member for resistance without causing the alloy plate to be deteriorated. | ||||||
| 94 | Silicon nitride circuit board and semiconductor module | US09051477 | 1998-04-17 | US06232657B1 | 2001-05-15 | Hiroshi Komorita; Kazuo Ikeda; Michiyasu Komatsu; Yoshitoshi Sato; Takayuki Naba |
| There is provided a semiconductor module which comprises a high thermal conductive silicon nitride substrate 10 having a thermal conductivity of 60 w/m·k or more, a semiconductor element 7 mounted on this high thermal conductive silicon nitride substrate 10, metal circuit plates 3 which are bonded on the semiconductor element-mounted side of this high thermal conductive silicon nitride substrate 10 and single metal plate 4a which is bonded to a side opposing to the semiconductor element-mounted side of this high thermal conductive silicon nitride substrate and is bonded on an apparatus casing 9 or a mounting board. By this constitution, there can be provided a semiconductor module having a simple structure, which can be miniaturized, and having an improved structure strength and an excellent heat cycle resistance property without requiring a heat sink plate or the like. | ||||||
| 95 | Process for producing a ceramic substrate and a ceramic substrate | US794516 | 1997-02-03 | US6066219A | 2000-05-23 | Jurgen Schulz-Harder; Karsten Schmidt; Karl Exel |
| The invention relates to a novel ceramic substrate with at least one layer essentially of aluminum nitride which is provided on at least one surface side with an intermediate or auxiliary layer which contains aluminum oxide and which has a thickness in the range of 0.5-10 microns, and to a process for its production. | ||||||
| 96 | Method of bonding metal to a non-metal substrate | US319014 | 1994-10-06 | US5586714A | 1996-12-24 | Victor Curicuta; Dennis R. Alexander; Robert J. Deangelis; Brian W. Robertson |
| A method of bonding metal to a non-metal substrate. The process includes placing the metal in contact with a non-metal substrate and blanketing the contact region with a gaseous atmosphere in which the amount of reactive gas is limited to minimize oxidation of the metal at the surface. Heating of the metal is accomplished by various means including a laser beam. The metal is heated to a point where the reactive gas and metal form a eutectic that wets the contact area between the metal and non-metallic substrate. Upon cooling, the metal and non-metallic substrate are bonded together over a substantial part of the contact area. | ||||||
| 97 | Method for bonding thermally-mismatched elements of a traveling wave tube | US287545 | 1994-08-08 | US5501390A | 1996-03-26 | Curtis G. Allen; David H. Perrone; David M. Rossi |
| A method for bonding thermally-mismatched elements of a traveling wave tube employs a metallic plate of undulating character. The plate is located at the region of the interface between tube elements formed of materials of materially-differing thermal character such as the ceramic termination piece and an adjacent sever pole piece of copper. Through either a brazing or a sintering process, pluralities of bonds are formed at points of tangency between the plate and the two elements of differing thermal expansion coefficients. As a result, a good heat flow path, accompanied by a more stable r.f. interface, is formed between the materials that is not subject to fracture as are prior art diffusion bonds. | ||||||
| 98 | Direct bonding of copper composites to ceramics | US268488 | 1994-06-30 | US5490627A | 1996-02-13 | Alvin L. Krum; William T. Campbell |
| A ceramic member (52) is direct-bonded to a copper composite substrate (58) by heating to diffuse copper to the surface (56) of the copper composite substrate, oxidizing the surface of the copper composite substrate following heating, placing a ceramic member in contact with the resulting oxidized substrate, and forming a copper-copper oxide eutectic (54) at the interface between the copper composite substrate and the ceramic member by heating. The eutectic, upon cooling, forms a bond between the copper composite and the ceramic. | ||||||
| 99 | Method of bonding copper and a substrate for power electronics and made of a non-oxide ceramic | US82448 | 1993-06-25 | US5473137A | 1995-12-05 | Roland Queriaud; Alain Petitbon |
| A method of bonding copper to a heat conducting and electrically insulating power electronics substrate made of a non-oxide ceramic selected from AlN, SiC, and BN, the method including the steps of oxidizing the surface of the substrate and then directly bonding copper to the oxidized surface of the substrate, wherein the step of oxidizing the surface of the substrate is performed by irradiating the surface using a laser beam to a thickness in the range 0.1 .mu.m to 3 .mu.m. | ||||||
| 100 | Ceramic-to-conducting-lead hermetic seal | US38418 | 1993-03-29 | US5273203A | 1993-12-28 | Harold F. Webster |
| A hermetic seal is provided for a conductive feedthrough through a thin ceramic component by a platinum or palladium lead by sealing the gap between the lead and the ceramic with a copper-copper oxide eutectic. The lead may have a copper coating on it prior to and subsequent to formation of the copper-copper oxide eutectic. | ||||||
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