子分类：
| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 81 | ハンドル基板、半導体用複合基板、半導体回路基板およびその製造方法 | JP2015518488 | 2014-12-16 | JP5781254B1 | 2015-09-16 | 宮澤 杉夫; 岩崎 康範; 高垣 達朗; 井出 晃啓; 中西 宏和 |
| 半導体用複合基板のハンドル基板2Aが多結晶透光性アルミナからなり、多結晶透光性アルミナのアルミナ純度が99.9%以上であり、多結晶透光性アルミナの200〜400nmの波長範囲における前方全光線透過率の平均値が60%以上であり、多結晶透光性アルミナの200〜400nmの波長範囲における直線透過率の平均値が15%以下である。 【選択図】 図1 |
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| 82 | Ceramic sheet | JP2007143976 | 2007-05-30 | JP2008296431A | 2008-12-11 | KAWAI HIDEJI; MATSUZAKI TORU |
| <P>PROBLEM TO BE SOLVED: To further improve a characteristic feature of a ceramic layer in a ceramic sheet having a ceramic layer composed of a plurality of ceramic small pieces arranged in a planar manner. <P>SOLUTION: The ceramic layer 5 of the ceramic sheet 1 has a structure wherein a plurality of ceramic small pieces 5a are arranged. The plurality of ceramic small pieces 5a are formed by sandwiching a thin plate like ceramic where a dashed line-like recessed part or a hole part is formed on at least either one side surface of front and back sides between resin sheet layers 3 and then splitting it along the dashed line. The characteristic feature of the ceramic layer can be improved by splitting a thin plate like ceramic along a dashed line-like recessed part or hole part, as compared with the case where the thin plate-like ceramic is split along a solid line-like groove. <P>COPYRIGHT: (C)2009,JPO&INPIT | ||||||
| 83 | Manufacturing methods and uses of the material composite and complex | JP2002500801 | 2001-05-28 | JP2003535482A | 2003-11-25 | キーゼヴェッター、ヘルムート; バウアー、ヴォルフガング; ヒュークギング、エリザベート; マテス、ヴィーラント; ヤコビッツ、ヨッヒェン |
| (57)【要約】 金属のモリブデン，タングステンパラジウムまたは白金の少なくとも１つを含有するマンガン−シリケートガラスから成る第１の結合層（３）と、マンガン−シリケートガラスから成る第２の結合層（４）とを介して、酸化アルミニウムサファイア（２）と酸化アルミニウムセラミックス（５）との堅牢な結合が達成される。 このために個々の材料は焼結される。 材料複合体（１）は光点弧サイリスタ（２４）の容器（１６）内に酸化アルミニウムサファイア（２）から成る窓を設けるために使用される。 | ||||||
| 84 | Method of manufacturing ceramic multilayer board | JP2001154958 | 2001-05-24 | JP2002353623A | 2002-12-06 | HASHIMOTO AKIRA; NAKAO KEIICHI; KATSUMATA MASAAKI |
| PROBLEM TO BE SOLVED: To provide a ceramic multilayer circuit board with a high dimensional accuracy. SOLUTION: A method of manufacturing a ceramic multilayer circuit board comprises a process of forming an adhesive layer 12 at least on the surface of a ceramic board 11. Due to the existence of the adhesive layer 12, the ceramic substrate 11 and an unsintered green sheet 14 can be integrated into one body, causing little lateral shrinkage even after burning, resulting in the easy manufacturing of the ceramic multilayer circuit board with a high dimensional accuracy. COPYRIGHT: (C)2003,JPO | ||||||
| 85 | Ceramic multilayer board and manufacture thereof | JP31866694 | 1994-12-21 | JPH08181443A | 1996-07-12 | NISHIDE MITSUYOSHI; TANI KOJI |
| PURPOSE: To provide a ceramic multilayer board in which a crack at the time of laminating different ceramic boards or due to heat shock thereafter is suppressed and which has excellent moisture resistance, insulating characteristics and reliability and a method for manufacturing the same. CONSTITUTION: Two types of ceramic boards 1, 2 having different thermal expansion coefficients are so laminated by at least two types of glass layers 3a, 3b having different thermal expansion coefficients between the coefficients as to stepwisely match the difference of the coefficients between the ceramic boards. The differences between the board 1 and the layer 3b, the layers 3b and 3b and the layer 3a and the board 2 are preferably 1×10<-6> / deg.C or lower. | ||||||
| 86 | Manufacture of reflector or mirror and reflector | JP7123893 | 1993-03-05 | JPH07198917A | 1995-08-01 | PAPENBURG ULRICH; GOEDTKE PETER; BLENNINGER ERNST |
| PURPOSE: To easily manufacture a reflector or a mirror whose mechanical characteristics and thermal characteristics are improved. CONSTITUTION: A metallic silicon with sufficient thickness is fused to a CFC or CMC substrate preform structure having the size of a component to be manufactured by a thermal processing, especially, the thermal processing under vacuum or protecting gas in a temperature ranging from 1300 to 1600 deg.C for forming a light reflecting or mirror structure. The reflecting or mirror structure can be directly formed by this method. When the silicon is formed as the form of a wafer connected with the substrate form by one layer of a fused eutectic body using non-ferrous metal, the operation can be attained in a temperature ranging from 300-600 deg.C. The non-ferrous metal is preferably gold. | ||||||
| 87 | JPS5318344B1 - | JP11478274 | 1974-10-07 | JPS5318344B1 | 1978-06-14 | |
| There is disclosed a process for coating a substrate which comprises applying to the substrate a polymeric based composition comprising a finely divided, particulate inorganic material dispersed in a low molecular weight, low vapor pressure, liquid polymer consisting of poly (alpha substituted) styrene and having a relatively constant viscosity and thixotropic character and capable of being decomposed or pyrolyzed completely to gaseous products at a relatively low temperature without forming a carbonaceous or like residue having a deleterious effect(s) in the application of the composition to the substrate. | ||||||
| 88 | 잔류응력이 없는 탄화규소 접합체 및 그 제조방법 | KR1020170030548 | 2017-03-10 | KR1020180103509A | 2018-09-19 | |
| 본발명은탄화규소접합체및 그제조방법에관한것으로서, 보다상세하게는탄화규소접합체의제조방법에있어서, 접합체를구성하는탄화규소기재를소결하는단계; 소결된탄화규소기재중 선택된적어도두개의기재사이에상기탄화규소기재와동일한조성을갖는소결되지아니한탄화규소접합제를개재하여탄화규소예비접합체를제조하는단계; 및상기탄화규소예비접합체를열처리하여탄화규소접합체를제조하는단계;를포함하여구성되는것을특징으로하는탄화규소접합체및 그제조방법을제공한다. 이상과같은본 발명에따르면, 본발명은탄화규소기재의조성과일치하는접합제를사용함으로써, 잔류응력이없는접합체를제조할 수있으므로, 기재강도의 65 내지 190% 범위의높은강도를가진탄화규소접합체제조가가능하다. | ||||||
| 89 | 금속/세라믹 회로 기판 제조 방법 | KR1020180023419 | 2018-02-27 | KR1020180101202A | 2018-09-12 | |
| 구리판(14)이은을함유하는활성금속함유브레이징용가재(12)를거쳐서세라믹기판(10)의하나이상의표면에접합된후, 구리판(14) 및활성금속함유브레이징용가재(12)의불필요한부분이제거되고, 이후활성금속함유브레이징용가재(12)가구리판(14)의측면부로부터돌출하게하기위해구리판(14)의불필요한부분이화학연마에의해제거되며, 이후화학연마에의해구리판(14)의표면에부착된은 층(18)이제거된다. | ||||||
| 90 | 적층 세라믹 전자 부품 및 적층 세라믹 전자 부품의 실장 기판 | KR1020160085037 | 2016-07-05 | KR101823249B1 | 2018-01-29 | 윤근정; 구현희; 최혜영; 이진우; 최재열 |
| 본발명은복수의유전층이적층되어형성되고, 제1 방향으로서로마주보는제1면및 제2면, 상기적층방향에평행한제2 방향으로서로마주보며상기제1면및 제2면과연결된제3면및 제4면, 제3 방향으로서로마주보며상기제1 내지제4면과연결된제5면및 제6면을갖는세라믹바디; 상기유전층을사이에두고, 상기세라믹바디의제1면및 제2면으로각각노출되는제1 및제2 내부전극; 상기세라믹바디의제1면및 제2면에배치되며, 상기제1 및제2 내부전극과각각연결되는제1 및제2 외부전극; 상기세라믹바디의제3면및 제4면에배치되며, 상기제1 및제2 외부전극과각각연결되고, 상기제1 및제2 외부전극의두께보다얇은두께를가지는제1 및제2 도전성박막; 및상기제1 및제2 외부전극상에배치된제1 및제2 솔더방지막;을포함하는적층세라믹전자부품에관한것이다. | ||||||
| 91 | RESIDUAL STRESS FREE JOINED SILICON CARBIDE CERAMICS AND PROCESSING METHOD OF THE SAME | US15879376 | 2018-01-24 | US20180257997A1 | 2018-09-13 | Young Wook KIM; Seung Hoon JANG |
| The present invention relates to joined silicon carbide (SiC) ceramics and a method for processing the same. And, most particularly, the joined silicon carbide (SiC) ceramics and the method for processing the same provide a method for processing joined silicon carbide (SiC) ceramics including the steps of sintering silicon carbide substrates configuring the joined ceramics, processing a joined silicon carbide ceramics preparation by layering a non-sintered silicon carbide bond having a same composition as the silicon carbide substrate between at least two substrates selected from the sintered silicon carbide substrates, and processing the joined silicon carbide ceramics by performing heat treatment on the joined silicon carbide ceramics preparation. According to the above-described invention, by using a bond having the same composition as the silicon carbide substrate, since residual stress-free joined ceramics can be processed, joined silicon carbide ceramics having a high strength corresponding to 65 to 190% of a strength of the substrate may be processed. | ||||||
| 92 | METHOD FOR PRODUCING METAL/CERAMIC CIRCUIT BOARD | US15891617 | 2018-02-08 | US20180255645A1 | 2018-09-06 | Takashi Ideno; Ayumu Ozaki; Koji Kobayashi |
| After a copper plate 14 is bonded to at least one surface of a ceramic substrate 10 via an active metal containing brazing filler metal 12 which contains silver, the unnecessary portion of the copper plat 14 and active metal containing brazing filler metal 12 is removed, and thereafter, an unnecessary portion of the copper plate 14 is removed by chemical polishing so as to cause the active metal containing brazing filler metal 12 to protrude from the side face portion of the copper plate 14, and then, a silver layer 18 adhered to the surface of the copper plate 14 by the chemical polishing is removed. | ||||||
| 93 | ELECTRODE COMPRISING HEAVILY-DOPED CERIA | US15605622 | 2017-05-25 | US20170346088A1 | 2017-11-30 | Sophie Marie Claire POIZEAU; Deniz CETIN; Srikanth GOPALAN |
| An electrode can include a functional layer having an Ln2MO4 phase, where Ln is at least one lanthanide optionally doped with a metal and M is at least one 3d transition metal, and a heavily-doped ceria phase. An electrochemical device or a sensor device can include the electrode. | ||||||
| 94 | METALLIC COMPOSITIONS USEFUL FOR BRAZING, AND RELATED PROCESSES AND DEVICES | US15236979 | 2016-08-15 | US20160354869A1 | 2016-12-08 | Sundeep Kumar; Raghavendra Rao Adharapurapu; Mohamed Rahmane |
| A braze alloy composition is disclosed, containing nickel, about 5% to about 40% of at least one refractory metal selected from niobium, tantalum, or molybdenum; about 2% to about 32% chromium; and about 0.5% to about 10% of at least one active metal element. An electrochemical cell that includes two components joined to each other by such a braze composition is also described. A method for joining components such as those within an electrochemical cell is also described. The method includes the step of introducing a braze alloy composition between a first component and a second component to be joined, to form a brazing structure. In many instances, one component is formed of a ceramic, while the other is formed of a metal or metal alloy. | ||||||
| 95 | Solid body joining of a carrier body and a cover layer, particularly by anodic bonding | US14547318 | 2014-11-19 | US09507062B2 | 2016-11-29 | Carsten Pampuch; Khaldoun Halalo; Volker Schmidt |
| In a method for solid body joining of a carrier body (10) and a cover layer (20), in particular by anodic bonding, the cover layer (20) is pressed with a pressing force against a curved carrier body surface (11), wherein the pressing force during the solid body joining is distributed by way of a pressure intermediary device (30) areally and simultaneously over the whole cover layer (20) and is directed perpendicularly to the curvature of the carrier body surface (11). A composite component comprising a carrier body (10) and a cover layer (20) is also disclosed, wherein a curved areal joining region (13) is formed between a cover layer surface (21) and a carrier body surface (11). | ||||||
| 96 | CARBON CERAMIC BRAKE DISC AND METHOD FOR MANUFACTURING THE SAME | US14995908 | 2016-01-14 | US20160333950A1 | 2016-11-17 | Dong Won IM; Yeon Ho CHOI; Kang YOO; Nam Cheol LEE |
| A carbon ceramic brake disc according to the present invention includes: a support body having cooling channels at the center portion; and friction layers directly attached to the top and the bottom of the support body without a bonding layer and having components different from the components of the support body, in which the support body is composed of a plurality of layers having components similar to the friction layers, gradually toward the friction layers from the cooling channels as the center.Accordingly, the support body can perform thermomechanical shock absorbing that is an original function and the friction layers and the support body can be prevented from separating while the carbon ceramic brake disc is manufactured. | ||||||
| 97 | CERAMIC CIRCUIT SUBSTRATE AND ITS PRODUCTION METHOD | US14422477 | 2013-08-15 | US20150216056A1 | 2015-07-30 | Hiroyuki Teshima; Hisayuki Imamura; Junichi Watanabe |
| A method for producing a ceramic circuit substrate comprising the steps of forming brazing regions each comprising brazing material powder and an organic binder on a ceramic substrate; setting metal plates on the ceramic substrate via the brazing regions, and heating the ceramic substrate, the brazing regions and the metal plates to bond the metal plates to the ceramic substrate via brazing layers made of the brazing material, thereby forming a bonded body; and cleaning the bonded body with a hypochlorite-containing agent. | ||||||
| 98 | COMPOSITE PLATE AND PRODUCTION METHOD THEREFOR | US14408989 | 2013-06-26 | US20150174863A1 | 2015-06-25 | Isao Yamashita; Kohei Imai; Shoichi Yamauchi; Koji Tsukuma |
| [Problem] To provide a composite plate comprising a zirconia sintered body and a base material, or a zirconia sintered body and a base material comprising at least one among a group includes strengthened glass, Bakelite, aluminum, and magnesium, said composite plate being capable of being suitably used in a case or a watch member, etc, for a mobile electronic device that is light weight and has excellent shock resistance and abrasion resistance.[Solution] A composite plate having a thickness of no more than 2 mm, and having laminated therein a zirconia sintered body, an adhesive layer, and a base material, the elasticity of the base material being no more than 100 GPa, and the apparent density of the composite plate being no more than 4.3 g/cm3; or a composite plate having a thickness of no more than 2 mm and includes, laminated in order, a zirconia sintered body, an adhesive layer, and a base material includes at least one type among a group includes strengthened glass, Bakelite, aluminum, and magnesium, the thickness ratio (zirconia sintered body thickness/base material thickness) between the zirconia sintered body and the base material being 0.1-1, and the apparent density of the composite plate being no more than 4.3 g/cm3. | ||||||
| 99 | SOLID BODY JOINING OF A CARRIER BODY AND A COVER LAYER, PARTICULARLY BY ANODIC BONDING | US14547318 | 2014-11-19 | US20150140276A1 | 2015-05-21 | Carsten PAMPUCH; Khaldoun HALALO; Volker SCHMIDT |
| In a method for solid body joining of a carrier body (10) and a cover layer (20), in particular by anodic bonding, the cover layer (20) is pressed with a pressing force against a curved carrier body surface (11), wherein the pressing force during the solid body joining is distributed by way of a pressure intermediary device (30) areally and simultaneously over the whole cover layer (20) and is directed perpendicularly to the curvature of the carrier body surface (11). A composite component comprising a carrier body (10) and a cover layer (20) is also disclosed, wherein a curved areal joining region (13) is formed between a cover layer surface (21) and a carrier body surface (11). | ||||||
| 100 | Method for Producing Inorganic Fiber-Bonded Ceramic Material | US14387713 | 2013-03-21 | US20150137411A1 | 2015-05-21 | Kenji Matsunaga; Shinji Kajii; Shohei Suizu; Tsutomu Kodama |
| Provided is a method for producing an inorganic fiber-bonded ceramic material, which can produce, at a high yield, an inorganic fiber-bonded ceramic material with fewer defects, and with an end part and a central part equivalent to each other in microstructure and mechanical properties, and also makes it possible to increase the ceramic material in size. The method for producing an inorganic fiber-bonded ceramic material is characterized in that it includes: a first pressing step of setting, in a carbon die, a laminate to be surrounded by a ceramic powder, the laminate obtained by stacking a coated inorganic fiber shaped product including an inorganic fiber part of inorganic fibers that have a pyrolysis initiation temperature of 1900° C. or lower, and a surface layer of an inorganic substance for bonding the inorganic fibers to each other, and pressing the laminate at a temperature of 1000 to 1800° C. and a pressure of 5 to 50 MPa in an inert gas atmosphere; and a second pressing step of pressing a ceramic coated laminate obtained in the first pressing step at a temperature of 1600 to 1900° C., which is higher than that in the first pressing step, and at a pressure of 5 to 100 MPa in an inert gas atmosphere. | ||||||
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