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序号 专利名 申请号 申请日 公开(公告)号 公开(公告)日 发明人
101 一种节能石英连熔炉及节能方法与调整拉管规格方法 CN200710020784.4 2007-03-28 CN101054257A 2007-10-17 徐胜利
一种节能石英连熔炉,包括炉体、炉盖和芯杆,芯杆的底部设有成型器,其特点是,在与炉盖连接处的芯杆上设有升降调整螺母;炉体内设有固定连接在炉盖盖体上的钨钼坩埚;所述的炉盖包括盖体、顶盖、上盖、下盖和底盖,上盖与下盖均为圆环形板状结构,上盖固定设在盖体的上部,顶盖与上盖之间通过固件连接,底盖和盖体之间呈分体式设置,底盖和盖体之间设有密封圈,下盖设在密封圈上并通过紧固件与底盖连接;所述的底盖上设有上部穿出上盖的调节螺栓,上盖下侧的调节螺栓上设有与之配套的调节螺母。本发明还公开了该节能石英连熔炉的节能方法与调整拉管规格方法。本发明石英连熔炉使用方便快捷、节能、拉管规格调整幅度较大。
102 一种石英玻璃管的真空脱羟方法 CN200710020781.0 2007-03-28 CN101050054A 2007-10-10 徐胜利
发明是一种石英玻璃管的真空脱羟方法,它通过采用调整电流电压的措施,从升(降)温、恒温共采用十二步法对石英玻璃管进行脱羟基处理。本发明脱羟方法保持和提高了石英玻璃管的热稳定性,提高了石英玻璃管的耐温和防裂变性能,降低了石英玻璃管的高温变形率,提高了产品的适应性。处理后所得的石英玻璃管的羟基含量可降到2ppm以下,石英玻璃管的高温变形率小,直径在120mm以上的石英玻璃管的变形率在3%以内,完全达到了半导体技术用的大口径石英玻璃管的要求。
103 利用电泳进一步致密的SiO2成形体、其制造方法及用途 CN01815348.8 2001-09-06 CN1269765C 2006-08-16 弗里茨·施韦特费格; 约翰·魏斯; 罗尔夫·克拉森; 扬·塔贝利恩
发明涉及一种制备生坯密度极高的多孔SiO2生坯或生坯内具有以指定方式调节的密度梯度的多孔SiO2生坯的方法。按照本发明的方法,其特征在于通过电泳方式将SiO2颗粒沉积在生坯孔隙内,使已知的由无定形SiO2组成的多孔SiO2生坯进一步致密。
104 制造成型玻璃坯体的方法 CN200410038459.7 2004-04-28 CN1269749C 2006-08-16 弗里茨·施韦特费格; 霍尔格·西拉特; 扬·塔贝利翁; 罗尔夫-克劳斯·克拉森
一种制造具有接近正确的最终尺寸及轮廓的均匀成型SiO2坯体的方法,其中无定形SiO2粒子从性分散液中电泳沉积在不导电的膜上,该无定形SiO2粒子包括相对大的无定形SiO2粒子与相对小的无定形SiO2粒子,该膜的形状与构型对应于待制造的SiO2成型坯体,其中所述膜的平均孔隙大小大于较小的无定形SiO2粒子的平均粒度。
105 高固体含量的SiO2分散液、其制造方法及用途 CN200510099283.0 2000-09-07 CN1736861A 2006-02-22 弗里茨·施韦特费格; 约翰·魏斯; 彼得·里特; 阿基姆·莫尔特; 沃尔夫冈·施韦雷恩; 福尔克尔·弗赖; 汉斯-彼得·舍尔姆
发明涉及高固体含量的SiO2分散液、其制造方法以及由该分散液制造具有极高固体含量的多孔性无定形SiO2型材(Formkoerper)的制备方法。本发明的分散液是一种均匀的、容易浇注的、分散于分散介质中的无定形SiO2微粒的分散液。所说分散液的特征是其固体含量为至少80wt%的无定形SiO2微粒,且所述无定形SiO2微粒具有双模态粒径分布。
106 高固体含量的SiO2分散液、其制造方法及用途 CN00812728.X 2000-09-07 CN1221471C 2005-10-05 弗里茨·施韦特费格; 约翰·魏斯; 彼得·里特; 阿基姆·莫尔特; 沃尔夫冈·施韦雷恩; 福尔克尔·弗赖; 汉斯-彼得·舍尔姆
发明涉及高固体含量的SiO2分散液、其制造方法以及由该分散液制造具有极高固体含量的多孔性无定形SiO2型材(Formkoerper)的制备方法。本发明的分散液是一种均匀的、容易浇注的、分散于分散介质中的无定形SiO2微粒的分散液。所说分散液的特征是其固体含量为至少80wt%的无定形SiO2微粒,且所述无定形SiO2微粒具有双模态粒径分布。
107 内部玻璃化SiO2坩埚的制造方法 CN200410047575.5 2004-05-27 CN1572733A 2005-02-02 弗里茨·施韦特费格; 延斯·京斯特; 斯文·恩格勒; 于尔根·海因里希
一种制造无裂痕、内部玻璃化SiO2坩埚的方法,在该方法中,利用CO2激光束的焦斑烧结无定形、开孔SiO2坯体坩埚,其中在烧结过程中,使焦斑相对于坩埚移动,烧结作用利用点状焦斑自该SiO2坯体坩埚的上内边缘开始,并继续使点状焦斑扩大至预期焦斑尺寸,焦斑扫过SiO2坯体坩埚的上内边缘直至上内边缘完全玻璃化,然后焦斑移至SiO2坯体坩埚内。
108 部分区域玻璃化的SiO2成形体、其制造方法及用途 CN200310121528.6 2003-12-19 CN1510001A 2004-07-07 弗里茨·施韦特费格; 阿克塞尔·弗劳恩克内希特; 延斯·京斯特; 斯文·恩格勒; 于尔根·海因里希
一种制造部分区域或完全玻璃化SiO2成形体的方法,其中无定形、多孔性SiO2成形体是借助于辐射,利用无接触加热而烧结或玻璃化,并避免外来原子对该SiO2成形体造成污染,而且所用辐射是低于1000毫巴的低于大气压的压下的激光光束。
109 由多孔性石玻璃坯体制造具有结晶区的硅石玻璃坩埚的方法 CN02149571.8 2002-11-14 CN1420213A 2003-05-28 弗里茨·施韦特费格; 霍尔格·西拉特; 克里斯托弗·弗雷; 乌里希·兰贝特; 阿克塞尔·弗劳恩克内西特
一种用于制造石玻璃坩埚的方法,其中,a.制造用至少一种可促进硅石玻璃坩埚结晶的物质渗透的多孔性无定形硅石玻璃坯体,b.将经渗透的硅石玻璃坯体烘干,c.用金属或半金属填充,并且d.在900至2000℃温度下加热,历时1小时至1000小时。
110 高固体含量的SiO2分散液、其制造方法及用途 CN00812728.X 2000-09-07 CN1373737A 2002-10-09 弗里茨·施韦特费格; 约翰·魏斯; 彼得·里特; 阿基姆·莫尔特; 沃尔夫冈·施韦雷恩; 福尔克尔·弗赖; 汉斯-彼得·舍尔姆
发明涉及高固体含量的SiO2分散液、其制造方法以及由该分散液制造具有极高固体含量的多孔性无定形SiO2型材(Formkoerper)的制备方法。本发明的分散液是一种均匀的、容易浇注的、分散于分散介质中的无定形SiO2微粒的分散液。所说分散液的特征是其固体含量为至少80wt%的无定形SiO2微粒,且所述无定形SiO2微粒具有双模态粒径分布。
111 PRODUCTION OF SILICA GLASS BODIES WITH DEW-POINT CONTROL IN THE MELTING FURNACE PCT/EP2016081448 2016-12-16 WO2017103123A3 2017-08-24 WHIPPEY NIGEL ROBERT; GROMANN BORIS; SÖHN MATTHIAS
The invention relates to a method for producing a silica glass body, comprising the method steps: i.) providing silicon dioxide particles ii.) forming a glass melt from the silicon dioxide particles in a furnace and iii.) forming a silica glass body from at least one portion of the glass melt, wherein the furnace has a gas outlet, through which gas can be removed from the furnace and the dew point of the gas exiting the furnace through the gas outlet is less than 0°C. The invention also relates to a silica glass body that can be obtained by said method. In addition, the invention relates to a light guide, a lighting means and a shaped article, each of which can be obtained by further processing the silica glass body. The invention further relates to the adjustment of the dew point at the outlet of a furnace, comprising: providing a starting material in the furnace; operating said furnace, a gas flow being conducted through the furnace; and varying the residual moisture of the starting material or the gas exchange rate of the gas flow.
112 COMPONENT OF QUARTZ GLASS FOR USE IN SEMICONDUCTOR MANUFACTURE AND METHOD FOR PRODUCING THE SAME PCT/EP2007059217 2007-09-04 WO2008031742A3 2008-05-22 WEBER JUERGEN; SATO TATSUHIRO; SCHNEIDER RALF; HOFMANN ACHIM; GEBAUER CHRISTIAN
The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiO2 and dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.
113 MOLDED SIO2 ELEMENT FROM TWO LAYERS, METHOD FOR PRODUCING THE SAME AND USE THEREOF PCT/EP2006063934 2006-07-06 WO2007014823A2 2007-02-08 SCHWERTFEGER FRITZ
The invention relates to an amorphous porous open-pore molded SiO2 element which is characterized by being constituted of two or more SiO2 layers that have a different composition or that have a different structure.
114 TRANSPARENT SILICA GLASS LUMINESCENT MATERIAL AND PROCESS FOR PRODUCING THE SAME PCT/JP2004012373 2004-08-27 WO2005021449A3 2005-04-21 UCHINO TAKASHI; YAMADA TOMOKO
A luminescent element of next-generation optical device that by photoluminescence (PL), exhibits a large half-value width of emission spectrum in the wavelength region of visible light so as to realize broad light emitting characteristics and enables white light emission. Silica glass is produced through a firing operation for firing a product of pressure molding of silica microparticles such as fumed silica, wherein the firing temperature is regulated within a range not exceeding 1000°C so as to satisfactorily carry out dehydration condensation reaction with respect to OH groups of silica microparticles to thereby attain clearing and wherein amorphous defects having occurred during the reaction are retained without being reduced. This silica glass is used as a phosphor.
115 Method and device for bonding workpieces each produced from glass substrate or quartz substrate US14380746 2013-02-15 US10138162B2 2018-11-27 Akira Kato; Kinichi Morita; Shinji Suzuki
Vacuum ultraviolet light with a wavelength of 200 nm or less is applied on the joining surfaces of first and second workpieces made from a crystal substrate and a glass substrate, or a glass substrate and a glass substrate from a light irradiation unit. The workpieces are conveyed to a workpiece cleaning and laminating mechanism by a conveyance mechanism, the joining surfaces are subjected to mega-sonic cleaning as needed, and the workpieces are aligned with the joining surfaces thereof facing each other, and laminated such that the joining surfaces are in contact with each other. After being laminated, the laminated workpieces are conveyed to a workpiece heating mechanism and heated to increase the workpiece temperature to a predetermined temperature, and this temperature is maintained until joining is completed. The laminated workpieces are brought into a thermally expanded state upon heating, and are joined in this state.
116 PROCESS FOR JOINING OPAQUE FUSED QUARTZ TO CLEAR FUSED QUARTZ US15743738 2015-07-15 US20180201534A1 2018-07-19 Matthew Donelon; Ashur J. Atanos; Arturo Sanchez; Kwang Chul Kim
Processes for fusing opaque fused quartz to clear fused quartz to form ultraviolet light transmission windows comprise surrounding a clear fused quartz ingot with an opaque fused quartz sleeve or opaque fused quartz particles, then heating the clear and opaque fused quartz together in a furnace, past the transition temperature of the opaque fused quartz, in order to join the two types of quartz together around the perimeter of the clear fused quartz ingot, but without substantial mixing beyond the interface.
117 PRECISION CUT HIGH ENERGY CRYSTALS US15804941 2017-11-06 US20180057959A1 2018-03-01 Nassim Haramein
Crystals having a modified regular tetrahedron shape are provided. Crystals preferably have four substantially identical triangular faces that define four truncated vertices and six chamfered edges. The six chamfered edges can have an average length of l, and an average width of w, and 8≦l/w≦9.5.
118 Method for the manufacture of synthetic quartz glass US14868858 2015-09-29 US09790120B2 2017-10-17 Ian George Sayce; Martin Trommer
One aspect relates to a method for the production of synthetic quartz glass. Moreover, one aspect relates to a polyalkylsiloxane compound, which includes certain specifications with respect to chlorine content, metallic impurities content, and residual moisture, as well as the use thereof for the production of synthetic quartz glass. One aspect also relates to a synthetic quartz glass that can be obtained according to the method of one embodiment.
119 METHOD FOR THE MANUFACTURE OF SYNTHETIC QUARTZ GLASS US14868858 2015-09-29 US20160096765A1 2016-04-07 Ian George Sayce; Martin Trommer
One aspect relates to a method for the production of synthetic quartz glass. Moreover, one aspect relates to a polyalkylsiloxane compound, which includes certain specifications with respect to chlorine content, metallic impurities content, and residual moisture, as well as the use thereof for the production of synthetic quartz glass. One aspect also relates to a synthetic quartz glass that can be obtained according to the method of one embodiment.
120 Colored and opaque glass-ceramic(s), associated colorable and ceramable glass(es), and associated process(es) US13973195 2013-08-22 US09115023B2 2015-08-25 George Halsey Beall; Matthew John Dejneka; Sinue Gomez; Charlene Marie Smith; Steven Alvin Tietje
Disclosed herein are glass-ceramics having crystalline phases including β-spodumene ss and either (i) pseudobrookite or (ii) vanadium or vanadium containing compounds so as to be colored and opaque glass-ceramics having coordinates, determined from total reflectance—specular included—measurements, in the CIELAB color space of the following ranges: L*=from about 20 to about 45; a*=from about −2 to about +2; and b*=from about −12 to about +1. Such CIELAB color space coordinates can be substantially uniform throughout the glass-ceramics. In each of the proceeding, β-quartz ss can be substantially absent from the crystalline phases. If present, β-quartz ss can be less than about 20 wt % or, alternatively, less than about 15 wt % of the crystalline phases. Also Further crystalline phases might include spinel ss (e.g., hercynite and/or gahnite-hercynite ss), rutile, magnesium zinc phosphate, or spinel ss (e.g., hercynite and/or gahnite-hercynite ss) and rutile.
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