序号 专利名 申请号 申请日 公开(公告)号 公开(公告)日 发明人
121 Micro mechanical electrostatic relay JP26981895 1995-10-18 JPH08255546A 1996-10-01 HERUMUUTO SHIYURAAKU; HANSUUYURUGEN GEBUATSUTAA; ROTAARU KIIZEBUETSUTAA; YOAHIMU SHIMUKAATO
PROBLEM TO BE SOLVED: To inhibit slow contact formation so as to speed up switching of a contact. SOLUTION: A micro mechanical electrostatic relay comprises a base substrate having a base electrode 11 and a base contact 13, and further, an armature elastic tongue 2 curved apart from the base substrate by free etching. The tongue includes an armature electrode 5 and an armature contact 7. When a control voltage is applied between the electrode 5 and the contact 7, the elastic tongue becomes linear on the base substrate, and finally, the elastic tongue is elongated to bring the contact 7 and the electrode 11 into contact with each other. Geometrical discontinuity is formed at an wedge form clearance between both the electrodes 5, 11. This discontinuity is formed by providing a partly curved and partly linear shape for the elastic tongue, or deviating the leading end of the electrode from an elastic body clamping point, and/or is formed at a clearance defined between the elastic body clamping point and the base electrode.
122 Micromechanical relay having a hybrid drive device JP51854394 1994-02-14 JPH08506690A 1996-07-16 ロタール キーゼヴェッター,; ハンス−ユルゲン ゲファッター,; ヨアヒム シムカト,; ヘルムート シュラーク,
(57)【要約】 マイクロメカニカルなリレーは、可動子基板(52)からエッチングされた舌片状の可動子(53)を有している。 この可動子は、弾性的に可動子基板に結合されており、下方に位置するベース基板(51)のベース電極(58)と一緒に静電駆動装置を形成している。 さらに、この可動子(53)には圧電層(60)が設けられている。 この圧電層は撓みトランスデューサとして働き、付加的な駆動装置を形成している。 可動子(53)、ベース基板(51)および圧電層(60)の電極に電圧が印加されると、可動子はベース基板に引付けられ、次いで、ベースに大きな面にわたって載置され、これにより少なくとも1つのコンタクトが(55,56)が閉じる。 この場合、静電駆動装置および圧電駆動装置の異なる特性が重畳されるので、可動子運動開始時に強い引付けが生ぜしめられると共に、可動子引付け後にも強いコンタクトカが生ぜしめられる。
123 Electrostatic driven relay JP1060793 1993-01-26 JPH06223698A 1994-08-12 ICHIYA MITSUO; KASANO FUMIHIRO; NISHIMURA HIROMI; JIYATSUKII REBUINAA; DEIDEIEERU PERINO
PURPOSE: To provide an electrostatic driven relay capable of obtaining sufficient contact pressure, having nice contact reliability, including high inter-contact pressure resistance and requiring only low application potential to an electrode. CONSTITUTION: Upper and lower fixing pieces 1, 3 are formed of silicone wafer having fixed electrodes 10, 11 formed. A movable piece 2 sandwiched between the fixing pieces 1 and 3 is also consisting of silicone mono-crystal wafer having a movable electrode 6 and a movable contact 6 is supported movably. And steps 27, 28 are formed on the fixing electrodes 10, 11 so that an intra-gap between the support end part 9 side of a movable electrode 4 and fixing electrodes 10, 11 may be made smaller than that on the free end side. The contact pressure between the movable contact 4 and fixing contact 12 or 19 is made a large one by means of static electric power exerted to the movable electrode 4 by means of electrets 17, 18 formed on respective fixing electrodes 10, 11 and static electric power caused by external application are added together and by means of steps 27, 28. COPYRIGHT: (C)1994,JPO
124 FLEXIBLE ELECTROSTATIC ACTUATOR EP05738825 2005-04-25 EP1738217A4 2009-12-16 DAUSCH DAVID; GOODWIN SCOTT H
An electrostatic actuator having a base including a first electrode and a flexible membrane including at least two material layers of different materials in contact with each other. At least one of the material layers includes a second electrode electrically isolated from the first electrode. The flexible membrane includes a fixed end connected to the base and a free end opposite the fixed end and spaced apart from the base. The second electrode has at least first and second portions separated by a third portion and in combination defining a first and second step provided in a vicinity of the fixed end.
125 SWITCH EP03730818 2003-06-05 EP1513177A4 2008-10-08 NAKANISHI YOSHITO; NAKAMURA KUNIHIKO
A high isolation switch capable of responding at a high rate at a lower DC potential. The switch employs a microstructure group (103) consisting of microstructures (102a, 102b, 102c) and moves each microstructure (102a, 102b, 102c) slightly to obtain a large movement as the group. Consequently, the DC potentials being applied to the control electrodes (106a, 106b, 107a, 107b, 108a, 108b, 109a, 109b) of individual microstructures (102a, 102b, 102c) can be reduced. A high isolation switch (100) capable of responding at a high rate and operating at a lower DC voltage can thereby be realized.
126 Micro-switching device actuated by low voltage EP02016778.9 2002-07-26 EP1314687B1 2007-01-24 Cho, Jin-woo
127 Micro electromechanical switch and method of manufacturing the same EP06111126.6 2006-03-14 EP1703532A1 2006-09-20 MASUDA, Takahiro c/o OMRON Corporation; SEKI, Tomonori c/o OMRON Corporation

A micro electromechanical relay opens and closes an electrical circuit by contact / separation between a fixed contact disposed on a base and a movable contact disposed on an actuator by driving of a movable electrode by electrostatic attraction by application of voltage between a fixed electrode disposed on the base and a movable electrode of the actuator. The actuator comprises a supporting portion disposed on the base, a beam portion extending in a cantilevered manner from the supporting portion, and a movable electrode and a movable contact elastically supported by the beam portion. The beam portion elastically supports, in order from the supporting portion end, the movable electrode and the movable contact. A slit is formed from the side of the supporting portion in the portion of the actuator connecting the beam portion and the movable electrode.

128 SWITCH EP03730818.6 2003-06-05 EP1513177A1 2005-03-09 NAKANISHI, Yoshito; NAKAMURA, Kunihiko

A switch capable of responding at a high rate at a lower DC potential and providing a high isolation is provided. In this switch, using microstructure group 103 having microstructure 102a, 102b and 102c, by slightly moving the microstructures 102a, 102b, and 102c a little, the group as a whole achieves a large amount of movement. Also, by this configuration, it is possible to decrease a DC potential to apply to the control electrodes 106a, 106b, 107a, 107b, 108a, 108b, 109a and 109b of the microstructures 102a, 102b and 102c. As a result, a high isolation switch 100 capable of operating at a high rate at a lower DC potential is realized.

129 Micro-switching device actuated by low voltage EP02016778.9 2002-07-26 EP1314687A3 2004-10-27 Cho, Jin-woo

A micro-switching device actuated by a low voltage is provided. The micro-switching device includes a spring operating elastically; a membrane formed on one side of the spring, being held by the spring; and a lower electrode formed below the membrane, for generating an electrostatic attraction when a voltage is applied thereto, wherein the membrane is non-planar. This micro-switching device is advantageous in that it can be actuated by a low voltage and prevents the adhesion that occurs commonly in micro devices.

130 MICROMACHINED ELECTROSTATIC ACTUATOR WITH AIR GAP EP00930822.2 2000-05-19 EP1183566B1 2004-08-18 GOODWIN-JOHANSSON, Scott, Halden
A MEMS (Micro Electro Mechanical System) electrostatic device operated with lower and more predictable operating voltages is provided. An electrostatic actuator, an electrostatic attenuator of electromagnetic radiation, and a method for attenuating electromagnetic radiation are provided. Improved operating voltage characteristics are achieved by defining a non increasing air gap between the substrate electrode and flexible composite electrode within the electrostatic device. A medial portion of a multilayer flexible composite overlying the electromechanical substrate is held in position regardless of the application of electrostatic force, thereby sustaining the defined air gap. The air gap is relatively constant in separation from the underlying microelectronic surface when the medial portion is cantilevered in one embodiment. A further embodiment provides an air gap that decreases to zero when the medial portion approaches and contacts the underlying microelectronic surface. A moveable distal portion of the flexible composite is biased to curl naturally due to differences in thermal coefficients of expansion between the component layers. In response to electrostatic forces, the distal portion moves and thereby alters the distance separating the flexible composite from the underlaying microelectronic surface. Structures and techniques for controlling bias in the medial portion and the resulting air gap are provided. The electrostatic device may be disposed to selectively clear or intercept the path of electromagnetic radiation. Materials used in the attenuator can be selected to pass, reflect, or absorb various types of electromagnetic radiation. A plurality of electromagnetic attenuators may be disposed in an array and selectively activated in subsets.
131 Micro-switching device actuated by low voltage EP02016778.9 2002-07-26 EP1314687A2 2003-05-28 Cho, Jin-woo

A micro-switching device actuated by a low voltage is provided. The micro-switching device includes a spring operating elastically; a membrane formed on one side of the spring, being held by the spring; and a lower electrode formed below the membrane, for generating an electrostatic attraction when a voltage is applied thereto, wherein the membrane is non-planar. This micro-switching device is advantageous in that it can be actuated by a low voltage and prevents the adhesion that occurs commonly in micro devices.

132 ELEKTROMECHANISCHES MIKRORELAIS UND VERFAHREN ZU DESSEN HERSTELLUNG EP00958315.4 2000-07-28 EP1203391A1 2002-05-08 SCHLAAK, Helmut; HANKE, Martin
The invention relates to a relay, especially a miniaturized electrostatic relay, with a bridge-forming contact. The contact spring is configured as a torsion spring that is linked with a control spring (3) via repeatedly bent spring elements (7), thereby allowing to compensate differences between solid contacts (2) of different heights. The invention further relates to a method for producing the relay as a micromechanic electrostatic relay.
133 Mikromechanisches elektrostatisches Relais EP95115647.0 1995-10-04 EP0713235B1 1998-02-25 Kiesewetter, Lothar, Prof. Dr.; Schimkat, Joachim; Schlaak, Helmut, Dr.; Gevatter, Hans-Jürgen, Prof. Dr.
134 Mikromechanisches Relais EP95115649.6 1995-10-04 EP0710972A1 1996-05-08 Schlaak, Helmut, Dr.; Schimkat, Joachim

Das mikromechanische elektrostatische Relais besitzt einerseits ein Basissubstrat mit einer Basiselektrode und einem Basis-Kontaktstück, andererseits ein Ankersubstrat mit einer freigeätzten, vom Basissubstrat weg gekrümmten Anker-Federzunge (2) mit einer Ankerelektrode und einem Anker-Kontaktstück. Bei Anlegen einer Steuerspannung zwischen den beiden Elektroden rollt die Federzunge auf dem Basissubstrat ab und schließt damit den Kontakt. Die Krümmung der Federzunge im Ruhezustand wird durch eine Beschichtung mit einer Druckspannungsschicht erzeugt. Um dabei unerwünschte Querwölbungen der Federzunge zu vermeiden, ist die Druckspannungsschicht (41) in Längsrichtung der Federzunge durch Schlitze (21) in Streifen (22) unterteilt. Eine ganzflächig über die Streifen und Schlitze aufgebrachte Zugspannungsschicht (42) verstärkt den Kompensationseffekt.

135 Electrostatic relay EP94101002.7 1994-01-24 EP0608816A3 1995-05-10 Ichiya, Mitsuo; Kasano, Fumihiro; Nishimura, Hiromi; Lewiner, Jacques; Perino, Didier

An electrostatic relay comprises at least one fixed base having a fixed electrode and an actuator frame having a movable electrode. The fixed base carries a pair of fixed contacts insulated from the fixed electrode. The movable electrode carries a movable contact insulated from the movable electrode. The movable electrode extends along the fixed electrode and is pivotally supported at its one longitudinal end relative to the fixed base so as to pivot between two contacting positions of closing and opening the movable contact to and from the fixed contacts. The movable contact is formed at the other longitudinal end of the movable electrode. A control voltage source is connected across the fixed electrode and the movable electrode to generate a potential difference therebetweeen for developing an electrostatic force by which the movable electrode is attracted toward said fixed electrode to move into one of the two contacting positions. The electrostatic relay is characterized in that the movable electrode is cooperative with the fixed electrode to define therebetween an elongate gap which is narrower toward the one longitudinal end about which the movable electrode pivot than at the other longitudinal end of the movable electrode at which the movable contact is carried.

136 Electrostatic relay EP94101002.7 1994-01-24 EP0608816A2 1994-08-03 Ichiya, Mitsuo; Kasano, Fumihiro; Nishimura, Hiromi; Lewiner, Jacques; Perino, Didier

An electrostatic relay comprises at least one fixed base having a fixed electrode and an actuator frame having a movable electrode. The fixed base carries a pair of fixed contacts insulated from the fixed electrode. The movable electrode carries a movable contact insulated from the movable electrode. The movable electrode extends along the fixed electrode and is pivotally supported at its one longitudinal end relative to the fixed base so as to pivot between two contacting positions of closing and opening the movable contact to and from the fixed contacts. The movable contact is formed at the other longitudinal end of the movable electrode. A control voltage source is connected across the fixed electrode and the movable electrode to generate a potential difference therebetweeen for developing an electrostatic force by which the movable electrode is attracted toward said fixed electrode to move into one of the two contacting positions. The electrostatic relay is characterized in that the movable electrode is cooperative with the fixed electrode to define therebetween an elongate gap which is narrower toward the one longitudinal end about which the movable electrode pivot than at the other longitudinal end of the movable electrode at which the movable contact is carried.

137 마이크로 스위칭 소자 및 마이크로 스위칭 소자 제조 방법 KR1020070125163 2007-12-04 KR1020080052424A 2008-06-11 나까따니다다시; 구엔투엔안; 우에다사또시; 요네자와유; 미시마나오유끼
A micro switching device and a method of manufacturing the same are provided to realize low resistance by increasing thickness of a pair of contact electrodes, thereby reducing insertion loss of the micro switching device. A micro switching device(X1) includes a base substrate(S1), a fixed unit(11), a movable unit(12), a movable contact electrode(13), a pair of fixed contact electrodes(14), a movable driving electrode(15), and a fixed driving electrode(16). The fixed unit is adhered to the base substrate. The movable unit has a fixed end(12a) fixed to the fixed unit and is extended along the base substrate. The movable contact electrode is formed on the movable unit at an opposite side to the base substrate. The pair of fixed contact electrodes have parts facing the movable contact electrode and are fixed to the fixed unit. The movable driving electrode is formed on the movable unit between the movable contact electrode and the fixed end at the opposite side to the base substrate. The fixed driving electrode has an overhead unit(16A) including a part facing the movable driving electrode and is adhered to the fixed unit. The overhead unit has a shape of a stair(16a) composed of a plurality of steps(16a') which get closer to the base substrate as going away from the movable contact electrode.
138 스위치 KR1020047007111 2003-06-05 KR100636457B1 2006-10-19 나카니시요시토; 나카무라구니히코
A switch capable of responding at a high rate at a lower DC potential and providing a high isolation is provided. In this switch, using microstructure group 103 having microstructure 102a, 102b and 102c, by slightly moving the microstructures 102a, 102b, and 102c a little, the group as a whole achieves a large amount of movement. Also, by this configuration, it is possible to decrease a DC potential to apply to the control electrodes 106a, 106b, 107a, 107b, 108a, 108b, 109a and 109b of the microstructures 102a, 102b and 102c. As a result, a high isolation switch 100 capable of operating at a high rate at a lower DC potential is realized. <IMAGE>
139 스위치패드 및 그것을 구비한 마이크로 스위치 KR1020050013182 2005-02-17 KR1020060092424A 2006-08-23 신형재; 이상훈; 김재흥; 다실바마크; 보우스트라시베; 권순철
신호의 흐름을 스위칭하는 스위치패드 및 그것을 구비한 마이크로 스위치가 개시된다. 스위치패드는 중심에서 주변으로 갈수록 기판에 설치된 정전구동부로부터 더 이격되게 형성된 몸체를 포함하는 것을 특징으로 한다. 본 발명에 따르면, 스위치패드가 중심에서 주변으로 갈수록 기판에 설치된 정전구동부로부터 더 이격되게 형성된 구조를 가짐으로써, 낮은 구동전압에서도 안정적으로 구동될 수 있다. 스위치, 정전기력, 효율, 증가, 구동전압, 감소, 스위치패드, 계단,
140 저전압 구동의 마이크로 스위칭 소자 KR1020010073574 2001-11-24 KR100421222B1 2004-03-02 조진우
A micro-switching device actuated by a low voltage is provided. The micro-switching device includes a spring operating elastically; a membrane formed on one side of the spring, being held by the spring; and a lower electrode formed below the membrane, for generating an electrostatic attraction when a voltage is applied thereto, wherein the membrane is non-planar. This micro-switching device is advantageous in that it can be actuated by a low voltage and prevents the adhesion that occurs commonly in micro devices. <IMAGE>
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