| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 81 | Arc resistant high voltage micromachined electrostatic switch | US345300 | 1999-06-30 | US6057520A | 2000-05-02 | Scott Halden Goodwin-Johansson |
| A MEMS (Micro Electro Mechanical System) electrostatically operated device is provided that can switch high voltages while providing improved arcing tolerance. The MEMS device comprises a microelectronic substrate, a substrate electrode, first and second contact sets, an insulator, and a moveable composite. The moveable composite overlies the substrate and substrate electrode. In cross section, the moveable composite comprises an electrode layer and a biasing layer. In length, the moveable composite comprises a fixed portion attached to the underlying substrate, a medial portion, and a distal portion moveable with respect to the substrate electrode. Each contact set has at least one composite contact attached to the moveable composite, and preferably at least one substrate contact attached to the substrate. One of the contact sets is closer to the composite distal portion. The distal and/or medial portions of the moveable composite are biased in position when no electrostatic force is applied. Applying a voltage between the substrate electrode and moveable composite electrode creates an electrostatic force that attracts the moveable composite to the underlying substrate. The first and second contact sets are electrically connected when the distal portion of the moveable composite is attracted to the substrate. Once electrostatic force is removed, the moveable composite reassumes the biased position such that the first and second contact sets are disconnected in a sequence to minimize arcing. Various embodiments and methods of using the electrostatic MEMS device are provided. | ||||||
| 82 | Spatial light modulator | US31487 | 1998-02-26 | US5959763A | 1999-09-28 | Carl O. Bozler; Steven Rabe |
| A spatial light modulator formed of a moveable electrode which is disposed opposite a fixed electrode and is biased to roll in a preferred direction upon application of an electric field across the electrodes to produce a light valve or light shutter. In one embodiment, the moveable electrode is restrained at one end and coils about the fixed end in a preferential roll direction. The bias is achieved by inducing anisotropic stress or anisotropic stiffness. | ||||||
| 83 | Electrical switch device with an integral semiconductor contact element | US352410 | 1982-02-26 | US4480162A | 1984-10-30 | John C. Greenwood |
| An electrical contact element includes a support component of an effectively electrically insulating material, especially silicon, the support component including a supporting body and an armature integral with and hingedly connected to the supporting body, the armature carrying at least one electrical contact. The electrical contact element is accommodated in a housing which is hermetically sealed and either filled with an inert gas or evacuated. The housing includes at least one fixed contact, and the supporting body is shaped as a frame which has a recess in which the armature is received when electrical contact is established between the electrical contact carried by the armature and the fixed electrical contacts carried by the housing. The electrical contact element is made by material-removing techniques from a single substantially plate-shaped member and then the electrical contact is vapor-deposited thereon. | ||||||
| 84 | Micro electromechanical switch and a manufacturing method thereof, and an apparatus using the micro electromechanical switch | JP2006016973 | 2006-01-25 | JP4792994B2 | 2011-10-12 | 貴弘 増田; 知範 積 |
| 85 | Micromachine electrostatic actuator having an air gap | JP2004129835 | 2004-04-26 | JP4465219B2 | 2010-05-19 | グッドウィン‐ヨハンソン，スコット・ホールデン |
| 86 | Switch, a method for switching the state of the signal paths, and the system | JP2008551227 | 2007-01-19 | JP2009524191A | 2009-06-25 | ヨアキム オーバーハンマー， |
| 本発明は、電気信号のための信号経路の形態を切り換える方法、システムおよび多重安定スイッチであって、第１の移動要素１２と第２の移動要素１４とを備え、第１および第２の要素が、少なくとも２つの機械的に安定な状態（第１の移動要素が第２の移動要素と機械的に結合され、スイッチにおける信号経路が閉形態に配置される機械的結合状態；第１の移動要素が上記第２の移動要素から分離され、スイッチにおける上記信号経路が開形態に配置される非結合状態）へと配置され得る方法、システムおよび多重安定スイッチに関する。 スイッチは第１の固定電極部を伴って構成される固定静電電極１０を備え、第１の固定電極部は、第１の固定電極と移動要素のうちの少なくとも一つとの間に電位差が加えられるときにその移動要素を作動させて移動させることにより移動要素を一方の状態から他方の状態へと移行させる。
【選択図】図２０ |
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| 87 | Microswitching element, and its manufacturing method | JP2006330975 | 2006-12-07 | JP2008146940A | 2008-06-26 | NAKATANI TADASHI; ANH TUAN NGUYEN; UEDA TOMOSHI; YONEZAWA YU; MISHIMA NAOYUKI |
| <P>PROBLEM TO BE SOLVED: To provide a microswitching element suitable for reducing a driving voltage. <P>SOLUTION: This microswitching element X1 is equipped with a base substrate S1, a stationary part 11, a movable part 12 extending along the base substrate S1 while having a stationary end 12a fixed to the stationary part 11, a movable contact electrode 13 provided on the movable part 12, a pair of stationary contact electrodes 14 each bonded to the stationary part 11 while each having potions facing the movable contact electrode 13, a movable driving electrode 15 provided between the movable contact electrode 13 and the stationary end 12a on the movable part 12, and a stationary driving electrode 16 bonded to the stationary part 11 while having an elevated part 16A including a portion facing the movable driving electrode 15. The elevated part 16A has a stair-stepped shape 16a consisting of a plurality of steps 16a', and the further each step 16a' of the stair-stepped shape 16a is from the movable contact electrode 13, the closer the step 16a' is to the base substrate S1. <P>COPYRIGHT: (C)2008,JPO&INPIT | ||||||
| 88 | Arc resistance high-voltage electrostatic switch | JP2001508469 | 2000-05-04 | JP4030760B2 | 2008-01-09 | グッドウィン‐ヨハンソン，スコット・ホールデン |
| 89 | Of low-voltage micro-switching element | JP2002339261 | 2002-11-22 | JP3942532B2 | 2007-07-11 | 鎭 佑 趙 |
| 90 | Micro-electro-mechanical system valve and a method of manufacturing the same | JP2002526693 | 2001-09-14 | JP2004508952A | 2004-03-25 | グッドウィン‐ヨハンソン，スコット・エイチ; マグワイア，ゲイリー・イー |
| 【課題】消費電力が最小でありながら早い動作、大きなバルブ力及び大きな変位利点があるマイクロ電気機械システム（ＭＥＭＳ）のバルブ装置を提供する。
【解決手段】開口７０が形成された基板２０と基板電極４０と開口７０の上に位置して電極素子層６２及びバイアス素子層６４、６６を有する可動膜６０とを含む。 少なくとも１つの弾性的に圧縮可能な誘電体層５０を設け、基板電極４０と可動膜６０の電極素子層６２との間の電気的絶縁を確実にする。 動作に当たっては、開口７０に対して可動膜６０を動かすように電圧差を基板電極４０と可動膜６０の電極素子層６２との間に設け、これにより、可動膜６０によってカバーされる開口７０の部分を制御可能に調整する。 【選択図】図１ |
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| 91 | Switch | JP2002170613 | 2002-06-11 | JP2004014471A | 2004-01-15 | NAKANISHI YOSHITO; NAKAMURA KUNIHIKO |
| PROBLEM TO BE SOLVED: To provide a switch of high isolation which can quickly respond at a much lower DC potential. SOLUTION: With the use of micro structure group 3 composed of micro structures 2, slightly moving the structures 2 provides a large amount of move as a group. So, the DC potential applied to control electrodes 4 and 5 of respective micro structures 2 can be lower. Thus, a switch 1 quickly responds with high isolation, and operates on a low DC voltage. COPYRIGHT: (C)2004,JPO | ||||||
| 92 | Arc resistance high-voltage electrostatic switch | JP2001508469 | 2000-05-04 | JP2003504800A | 2003-02-04 | グッドウィン‐ヨハンソン，スコット・ホールデン |
| (57)【要約】 高電圧を切換えることが可能である一方で、改善された耐アーク性を提供するＭＥＭＳ（マイクロエレクトロメカニカルシステム）静電作動式装置が提供される。 ＭＥＭＳ装置は、超小形電子基板、基板電極、第１の接点組および第２の接点組、絶縁体、および可動複合体を含む。 可動複合体は、基板および基板電極に上重ねされる。 横断面で見て、可動複合体は、電極層および偏倚層を含んでいる。 長さで見て、可動複合体は、下に位置する基板に取付けられている固定部分と、中間部分と、基板電極に対して可動の遠位部分とを含んでいる。 各接点組は、可動複合体に取付けられている少なくとも１つの複合体接点と、基板に取付けられている好ましくは少なくとも１つの基板接点とを有する。 複数の接点組のうちの１つの接点組は、複合体遠位部分により近く位置する。 可動複合体の遠位部分および／または中間部分は、静電気力が印加されない場合、偏倚されて適所に位置する。 基板電極と可動複合体電極との間に電圧を印加すると、静電気力が発生され、この静電気力により、可動複合体は下に位置する基板に吸引される。 第１および第２の接点組は、可動複合体の遠位部分が基板に吸引されると電気的に接続される。 いったん静電気力が除去されると、可動複合体は偏倚位置を再びとり、このようにして、第１および第２の接点組がシーケンシャルに接続解除されて、アーク形成を最小化する。 静電式ＭＥＭＳ装置を使用する様々な実施例および方法が提供される。 | ||||||
| 93 | Electrostatic switch, which is a high-pressure micro-machining for | JP2001506565 | 2000-06-23 | JP2003503816A | 2003-01-28 | グッドウィン‐ヨハンソン，スコット・ホールデン |
| (57)【要約】 【課題】 比較的低い静電気の動作電圧を使用して、高圧を切り換えることができる、ＭＥＭＳ式の静電気的に動作する高圧用スイッチ又はリレーディバイスを提供する。 【解決手段】 マイクロ電子基板、基板電極、および、１つ以上の基板接点、を備えるとともに、基板の上側にある可動の複合体、１つ以上の複合接点、および、少なくとも１つの絶縁体、も備え、その断面において可動の複合体は、電極層とバイアス層とからなるＭＥＭＳディバイス。 | ||||||
| 94 | Micromechanical relay | JP26870895 | 1995-10-17 | JPH08227646A | 1996-09-03 | HERUMUUTO SHIYURAAKU; YOAHIMU SHIMUKAATO |
| PROBLEM TO BE SOLVED: To accomplish complete tight contact with a base electrode while requiring a slight surface in a tongue shaped part of a contact element by coaxially installing a contact spring section to a original tongue type part by means of spring webs arranged in a ring shape. SOLUTION: A contact spring section 21 formed of slits 23 is held by means of spring webs 22, which are arranged in a ring shape and curved circularly. The slits 23 serving as spiral sections are arranged in a ring shape while being overlapped to each other. In this way, overlap sufficient for generating torsion of the webs 22 can be obtained when an armature contact piece 7 is moved in the axial direction, so that contact force can be regulated when the webs 22 are softened/hardened according to the length or the interval of the slits 23. COPYRIGHT: (C)1996,JPO | ||||||
| 95 | 정전 마이크로 접점 개폐기 및 그 제조 방법, 및 정전 마이크로 접점 개폐기를 이용한 전자 장치 | KR1020060016569 | 2006-02-21 | KR100799454B1 | 2008-01-30 | 마스다타카히로; 세키토모노리 |
| 본 발명은 종래와 동등한 복귀력을 확보하면서, 접촉력의 향상, 인가 전압의 저감, 및/또는, 전극의 치수의 축소를 실현하기 위한 것으로서, 상기 목적을 달성하기 위한 해결 수단에 있어서, 정전 마이크로 릴레이(10)는, 베이스(11)에 마련한 고정 전극(12)과, 액추에이터(21)의 가동 전극(24) 사이에 전압을 인가하여 생기는 정전 인력으로 가동 전극(24)을 구동하고, 베이스(11)에 마련한 고정 접점(13a·14a)에 액추에이터(21)에 마련한 가동 접점(26)을 접리시켜서 전기 회로를 개폐한다. 액추에이터(21)는, 베이스(11)에 마련한 지지부(22)와, 지지부(22)로부터 측방으로 연재되고, 가동 전극(24) 및 가동 접점(26)을 탄성 지지하는 들보부(23)를 구비한다. 들보부(23)는, 지지부(22)의 측으로부터 가동 전극(24) 및 가동 접점(26)의 순번으로 탄성 지지하고 있다. 들보부(23)와 가동 전극(24)을 접속하는 접속부(28)는, 지지부(22)의 측으로부터 슬릿(27)이 형성되어 있다. 정전 마이크로 접점 개폐기 | ||||||
| 96 | 스위치 | KR1020047007111 | 2003-06-05 | KR1020040062626A | 2004-07-07 | 나카니시요시토; 나카무라구니히코 |
| 한층 더 낮은 직류 전위로 고속으로 응답할 수 있고, 또, 아이솔레이션이 우수한 스위치. 본 스위치에 있어서, 미소한 구조체(102a, 102b, 102c)로 구성되는 미소 구조체군(103)을 이용하여, 각 구조체(102a, 102b, 102c)를 약간 이동시키는 것에 의해, 군(群)으로서는 큰 이동량을 얻을 수 있다. 또한, 이에 따라, 각각의 미소 구조체(102a, 102b, 102c)의 제어 전극(106a, 106b, 107a, 107b, 108a, 108b, 109a, 109b)에 인가하는 직류 전위를 작게 할 수 있다. 이렇게 하여, 고속으로 응답할 수 있고, 또한 아이솔레이션이 우수한 스위치(100)로서, 작은 직류 전압으로 동작하는 스위치(100)를 실현할 수 있다. | ||||||
| 97 | 저전압 구동의 마이크로 스위칭 소자 | KR1020010073574 | 2001-11-24 | KR1020030042795A | 2003-06-02 | 조진우 |
| PURPOSE: A micro switching device is provided to reduce an applied voltage, to obtain a desired variation amount by a weak electrostatic force, and to prevent an adhesion phenomenon. CONSTITUTION: A spring(54) elastically operates, and a membrane(55) is formed at one end of the spring so as to be supported. A lower electrode(52) is formed at a lower part of the membrane and generates an electrostatic force according to an applied voltage. The membrane is a non-flat board type. The spring is formed at an anchor part(53) fixed at a substrate(51). The membrane is supported by the spring and operates at a noncontact state with the substrate. A signal line(56) is formed on the substrate and is contact with the membrane by driving of the membrane. | ||||||
| 98 | With a curved switching device high frequency mems switch and a manufacturing method of this switch | JP2007500039 | 2005-02-25 | JP4927701B2 | 2012-05-09 | ウルリヒ・プレヒテル; フォルカー・ツィーグラー |
| 99 | Micro-switching element and a micro-switching device manufacturing method | JP2006330975 | 2006-12-07 | JP4855233B2 | 2012-01-18 | トエン アン グエン; 直之 三島; 知史 上田; 忠司 中谷; 遊 米澤 |
| 100 | Micromachine electrostatic actuator having an air gap | JP2001500902 | 2000-05-19 | JP4068346B2 | 2008-03-26 | グッドウィン‐ヨハンソン，スコット・ホールデン |
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