| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 81 | Method and apparatus for producing semiconductor device | US09304523 | 1999-05-04 | US06902616B1 | 2005-06-07 | Shunpei Yamazaki; Koichiro Tanaka |
| A liquid crystal display device is manufactured by first forming a crystalline semiconductor film 2103, of silicon for example, over an insulating substrate 2101, such as glass. The substrate is warped in the process. The warpage is corrected by suction against a stage 2201. The film crystallinity is enhanced by scanning with a linear laser beam. | ||||||
| 82 | Integrated circuit including single crystal semiconductor layer on non-crystalline layer | US10638858 | 2003-08-09 | US06885031B2 | 2005-04-26 | Theodore I. Kamins |
| A method of forming a single crystal semiconductor film on a non-crystalline surface is described. In accordance with this method, a template layer incorporating an ordered array of nucleation sites is deposited on the non-crystalline surface, and the single crystal semiconductor film is formed on the non-crystalline surface from the ordered array of nucleation sites. An integrated circuit incorporating one or more single crystal semiconductor layers formed by this method also is described. | ||||||
| 83 | Method of fabricating semiconductor device | US10395366 | 2003-03-25 | US06841434B2 | 2005-01-11 | Hidekazu Miyairi; Atsuo Isobe; Tomoaki Moriwaka; Akihisa Shimomura |
| The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deteriorating, on-current from decreasing, or off-current from increasing due to a grain boundary and a semiconductor device fabricated by the fabrication method. Striped (banded) or rectangular concave and convex portions are formed. Then, a semiconductor film formed on an insulating film is irradiated with a laser beam diagonally to the longitudinal direction of concave and convex portions on the insulating film. | ||||||
| 84 | BaTiO3-PbTiO3 series single crystal and method of manufacturing the same, piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator | US10879364 | 2004-06-30 | US20040231581A1 | 2004-11-25 | Hiroshi Aoto; Akira Unno; Tetsuro Fukui; Akio Ikesue |
| BaTiO3nullPbTiO3 series single crystal is single-crystallized by heating BaTiO3nullPbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3nullPbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity. | ||||||
| 85 | Crystals comprising single-walled carbon nanotubes | US10037045 | 2001-11-09 | US06800369B2 | 2004-10-05 | James Gimzewski; Reto Schlittler; Jin Won Seo |
| The invention is directed to a method of manufacturing single-walled carbon nanotubes comprising the steps of providing on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst, and heating the at least one pillar in the presence of a first magnetic or electric field. It further is directed to a precursor arrangement for manufacturing single-walled carbon nanotubes comprising on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst. A third aspect is a nanotube arrangement comprising a substrate and thereupon at least one crystal comprising a bundle of single-walled carbon nanotubes with essentially identical orientation and structure. | ||||||
| 86 | Epitaxial CoSi2 on MOS devices | US10280668 | 2002-10-25 | US20040079279A1 | 2004-04-29 | Chong Wee Lim; Chan Soo Shin; Ivan Georgiev Petrov; Joseph E. Greene |
| An SixNy or SiOxNy liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi2 layer underneath the liner. The CoSi2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi2 layer. | ||||||
| 87 | Integrated circuit including single crystal semiconductor layer on non-crystalline layer | US10638858 | 2003-08-09 | US20040048426A1 | 2004-03-11 | Theodore I. Kamins |
| A method of forming a single crystal semiconductor film on a non-crystalline surface is described. In accordance with this method, a template layer incorporating an ordered array of nucleation sites is deposited on the non-crystalline surface, and the single crystal semiconductor film is formed on the non-crystalline surface from the ordered array of nucleation sites. An integrated circuit incorporating one or more single crystal semiconductor layers formed by this method also is described. | ||||||
| 88 | Textured substrate tape and devices thereof | US10189678 | 2002-07-03 | US20040003768A1 | 2004-01-08 | Amit Goyal |
| A method for forming a sharply biaxially textured substrate, such as a single crystal substrate, includes the steps of providing a deformed metal substrate, followed by heating above the secondary recrystallization temperature of the deformed substrate, and controlling the secondary recrystallization texture by either using thermal gradients and/or seeding. The seed is selected to shave a stable texture below a predetermined temperature. The sharply biaxially textured substrate can be formed as a tape having a length of 1 km, or more. Epitaxial articles can be formed from the tapes to include an epitaxial electromagnetically active layer. The electromagnetically active layer can be a superconducting layer. | ||||||
| 89 | Method of fabricating semiconductor device | US10395366 | 2003-03-25 | US20030219935A1 | 2003-11-27 | Hidekazu Miyairi; Atsuo Isobe; Tomoaki Moriwaka; Akihisa Shimomura |
| The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deteriorating, on-current from decreasing, or off-current from increasing due to a grain boundary and a semiconductor device fabricated by the fabrication method. Striped (banded) or rectangular concave and convex portions are formed. Then, a semiconductor film formed on an insulating film is irradiated with a laser beam diagonally to the longitudinal direction of concave and convex portions on the insulating film. | ||||||
| 90 | Single crystal SiC and a method of producing the same | US09186662 | 1998-11-06 | US06203772B1 | 2001-03-20 | Kichiya Tanino; Masanobu Hiramoto |
| The single crystal SiC according to the present invention is produced in the following manner. Two complexes M in each of which a polycrystalline film 2 of &bgr;-SiC (or &agr;-SiC) is grown on the surface of a single crystal &agr;-SiC substrate 1 by thermochemical deposition, and the surface 2a of the polycrystalline film 2 is ground so that the smoothness has a surface roughness of 200 angstroms RMS or smaller, preferably 100 to 50 angstroms RMS are subjected to a heat treatment under a state where the complexes are closely fixed to each other via their ground surfaces 2a′, at a temperature of 2,000° C. or higher and in an atmosphere of a saturated SiC vapor pressure, whereby the polycrystalline films 2 of the complexes M are recrystallized to grow a single crystal which is integrated with the single crystal &agr;-SiC substrates 1. Large-size single crystal SiC in which impurities, micropipe defects, and the like do not remain, and which has high quality can be produced with high productivity. | ||||||
| 91 | Single crystal and method of producing the same | US147456 | 1998-12-29 | US6153165A | 2000-11-28 | Kichiya Tanino |
| According to the present invention, a complex (M) which is formed by growing a polycrystalline .beta.-SiC plate 2 on the surface of a single crystal .alpha.-SiC base material 1 by the thermal CVD method is heat-treated at a high temperature of 1,900 to 2,400.degree. C., whereby polycrystals of the polycrystalline cubic .beta.-SiC plate are transformed into a single crystal, so that the single crystal is oriented in the same direction as the crystal axis of the single crystal .alpha.-SiC base material and integrated with the single crystal of the single crystal .alpha.-SiC base material to be largely grown. As a result, single crystal SiC of high quality which has a very reduced number of lattice defects and micropipe defects can be efficiently produced while ensuring a sufficient size in terms of area. | ||||||
| 92 | Magnetooptical element | US516340 | 1995-08-17 | US5693138A | 1997-12-02 | Koichi Onodera |
| According to this invention, a magnetooptical element represented by (Cd.sub.1-X-Y Mn.sub.X Hg.sub.Y).sub.1 Te.sub.1 (0<X<1, 0<Y<1) comprises, so as to be used in a range around each of wavelength bands of 0.98 .mu.m, 1.017 .mu.m, 1.047 .mu.m, and 1.064 .mu.m, a single crystal having a composition contained in an area defined in a quasi ternary-element phase diagram of MnTe-HgTe-CdTe by four points a, b, c, and d of: Mn.sub.0.5 Hg.sub.0.5 Te, Mn.sub.0.6 Hg.sub.0.4 Te, Cd.sub.0.83 Mn.sub.0.13 Hg.sub.0.04 Te, and Cd.sub.0.83 Mn.sub.0.05 Hg.sub.0.12 Te, the single crystal having a thickness not smaller than 300 .mu.m and containing substantially no twin crystal and no segregation in composition. | ||||||
| 93 | Conversion of doped polycrystalline material to single crystal material | US552700 | 1995-11-03 | US5588992A | 1996-12-31 | Curtis E. Scott; Mary Sue Kaliszewski; Lionel M. Levinson |
| A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure. | ||||||
| 94 | Material for wide-band optical isolators and process for producing the same | US451739 | 1995-05-26 | US5584928A | 1996-12-17 | Emi Asai; Minoru Imaeda |
| A material for use in a 1.5 .mu.m wide-band optical isolator, includes a bismuth-substituted terbium-iron garnet single crystal having a composition of Bi.sub.x Tb.sub.3-x Fe.sub.5 O.sub.12 in which x is 0.35 to 0.45. This bismuth-substituted terbium-iron garnet single crystal is grown by a solid phase reaction. A process for producing such a material is also disclosed. | ||||||
| 95 | Formation of diamond materials by rapid-heating and rapid-quenching of carbon-containing materials | US287726 | 1994-08-09 | US5516500A | 1996-05-14 | Shengzhong Liu; Pravin Mistry |
| Diamond materials are formed by sandwiching a carbon-containing material in a gap between two electrodes. A high-amperage electric current is applied between the two electrode plates so as cause rapid-heating of the carbon-containing material. The current is sufficient to cause heating of the carbon-containing material at a rate of at least approximately 5,000.degree. C./sec, and need only be applied for a fraction of a second to elevate the temperature of the carbon-containing material at least approximately 1000.degree. C. Upon terminating the current, the carbon-containing material is subjected to rapid-quenching (cooling). This may take the form of placing one or more of the electrodes in contact with a heat sink, such as a large steel table. The carbon-containing material may be rapidly-heated and rapidly-quenched (RHRQ) repeatedly (e.g., in cycles), until a diamond material is fabricated from the carbon-containing material. The process is advantageously performed in an environment of a "shielding" (inert or non-oxidizing) gas, such as Argon (At), Helium (He), or Nitrogen (N.sub.2). In an embodiment of the invention, the carbon-containing material is polystyrene (e.g., a film) or glassy carbon (e.g., film or powder). In another embodiment of the invention, the carbon-containing material is a polymer, fullerene, amorphous carbon, graphite, or the like. In another embodiment of the invention, one of the electrodes is substrate upon which it is desired to form a diamond coating, and the substrate itself is used as one of the two electrodes. This would be useful for forming a thin-film diamond coating on a cutting tool insert. | ||||||
| 96 | Solid state formation of sapphire using a localized energy source | US64386 | 1993-05-21 | US5427051A | 1995-06-27 | Randolph E. Maxwell; Curtis E. Scott; Mary S. Kaliszewski; Marshall G. Jones; Lionel M. Levinson; Carl E. Erikson |
| Polycrystalline alumina bodies have been converted to sapphire by a solid state conversion process in which a localized energy source is used to heat only a portion of the body to a temperature above 1800.degree. C. Using a laser as the energy source resulted in conversion to sapphire in less than an hour. The polycrystalline alumina bodies had a magnesia content below 50 wppm, an average grain size below 100 microns, and a density greater than 3.97 g/cc. | ||||||
| 97 | Superconductor crystal and process for preparing the same | US777055 | 1991-10-16 | US5242896A | 1993-09-07 | Ichiro Matsubara; Hideo Tanigawa; Toru Ogura; Hiroshi Yamashita; Makoto Kinoshita; Tomoji Kawai |
| A process for producing a fibrous crystal or single crystal of a superconductor comprising bismuth, strontium, calcium, copper, lead and oxygen, having an atomic composition ratio represented by the formula Bi.sub.2-x Pb.sub.x Sr.sub.1.9-2.1 Ca.sub.1.9-2.1 Cu.sub.3 o.sub.y wherein 0<.times.<0.4 and 10.0<y<11.0, and having a Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10 structure (2223 structure). | ||||||
| 98 | Method of producing columnar crystal superalloy material with controlled orientation and product | US325248 | 1981-11-27 | US4518442A | 1985-05-21 | Herbert A. Chin |
| A processing sequence is described for producing specific controlled elongated oriented crystal structures in nickel base superalloys. The method is performed in the solid state. Superalloy material is provided in a dense workable form. The material is cold straight rolled and cold cross rolled with intermediate anneals. This sequence produces a particular texture or preferred orientation in the rolled article. This textured article is then directionally recrystallized to produce the desired final microstructure comprised of aligned elongated grains of a particular controllable orientation. | ||||||
| 99 | Method for producing graphite crystals | US320235 | 1981-11-12 | US4404177A | 1983-09-13 | Francis J. Derbyshire; Darrell D. Whitehurst |
| A process for continuously or semi-continuously producing and collecting highly oriented graphite crystals by diffusing carbon atoms through a heated Group VIII metal artifact such that they precipitate as graphite on a surface of the artifact. Diffusion of carbon atoms through the artifact is driven by maintaining a temperature differential across the artifact. | ||||||
| 100 | Method for synthesis of carbon crystals | US45136165 | 1965-04-27 | US3383298A | 1968-05-14 | WILSON WAYNE D; HALL HUBERT B |
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