| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 61 | Solid state transforming method using localized energy source | JP10423894 | 1994-05-19 | JPH0782074A | 1995-03-28 | RANDORUFU II MATSUKUSUUERU; KAACHISU EDOWAADO SUKOTSUTO; MEARII SUU KARISUZEUSUKII; MAASHIYARU GOODON JIYOONZU; RAIONERU MONTEII REBUINSON; KAARU EDOWAADO ERIKUSON |
| PURPOSE: To provide a solid state transforming method suitable to convert a polycrystalline alumina body into sapphire. CONSTITUTION: Only a part 61 of a polycrystalline alumina body 60 is heated to ≥1800°C by using a localized energy source 59. By using a laser as the energy source, the alumina body can be converted into sapphire within one hour. The polycrystalline alumina body used has ≥50 wppm magnesia content, ≤100 μm average crystal grain size and ≥3.97 g/cc density. COPYRIGHT: (C)1995,JPO | ||||||
| 62 | JPH0118988B2 - | JP20748882 | 1982-11-26 | JPH0118988B2 | 1989-04-10 | HAABAATO EI CHIN |
| A processing sequence is described for producing specific controlled elongated oriented crystal structures in nickel base superalloys. The method is performed in the solid state. Superalloy material is provided in a dense workable form. The material is cold straight rolled and cold cross rolled with intermediate anneals. This sequence produces a particular texture or preferred orientation in the rolled article. This textured article is then directionally recrystallized to produce the desired final microstructure comprised of aligned elongated grains of a particular controllable orientation. | ||||||
| 63 | Improved graph epitaxial growing method | JP7214080 | 1980-05-29 | JPS5626429A | 1981-03-14 | MAIKERU DABURIYUU GEIZU; DEERU SHII FURANDAASU; HENRII AI SUMISU |
| The invention relates to a method of enhancing epitaxy and preferred orientation in films on solid substrates, which includes forming at predetermined locations, a plurality of artificial point defects or a surface relief structure (7) at the surface of a solid substrate (1). Thereafter a film (8) is deposited on the surface to form a substantially epitaxial or preferred orientation layer in tre film having crystalographic orientation influenced by the geometry of an artificial defect. The orienting influence of the article defects may be enhanged by applying an incident beam of energy (9) to the film (8). | ||||||
| 64 | CRYSTAL CONTROLLED OSCILLATOR AND MANUFACTURING METHOD OF CRYSTAL CONTROLLED OSCILLATOR | US15903035 | 2018-02-23 | US20180248556A1 | 2018-08-30 | Hiroyasu KUNITOMO |
| A crystal controlled oscillator includes a crystal unit, an integrated circuit, and an insulating resin. The crystal unit contains a crystal vibrating piece resonating at a predetermined frequency. The integrated circuit places the crystal unit. The integrated circuit includes an oscillator circuit oscillating the crystal vibrating piece. The insulating resin is formed to cover the crystal unit on the integrated circuit. | ||||||
| 65 | BULK NANOFABRICATION WITH SINGLE ATOMIC PLANE PRECISION VIA ATOMIC-LEVEL SCULPTING OF CRYSTALLINE OXIDES | US15697541 | 2017-09-07 | US20180066376A1 | 2018-03-08 | Albina Y. Borisevich; Stephen Jesse; Sergei V. Kalinin; Andrew R. Lupini; Raymond R. Unocic; Qian He |
| A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals. | ||||||
| 66 | METHOD OF ARRANGING NANOCRYSTALS, METHOD OF PRODUCING NANOCRYSTAL STRUCTURE, NANOCRYSTAL STRUCTURE FORMATION SUBSTRATE, AND METHOD OF MANUFACTURING NANOCRYSTAL STRUCTURE FORMATION SUBSTRATE | US15518957 | 2015-10-07 | US20170225964A1 | 2017-08-10 | Ken-ichi MIMURA; Kazumi KATO |
| A method of arranging nanocrystals is provided, which includes a first process of putting barium titanate nanocrystals and/or strontium titanate nanocrystals, and a nonpolar solvent into a container, a second process of collecting a supernatant liquid including the barium titanate nanocrystals and/or the strontium titanate nanocrystals from the container, and a third process of immersing a substrate having an uneven structure into the supernatant liquid, and pulling up the substrate so as to coat the surface of the uneven structure with the supernatant liquid by using a capillary phenomenon, and to arrange the nanocrystals on the uneven structure. | ||||||
| 67 | Method for forming a single crystal by spraying the raw material onto a seed substrate | US13866185 | 2013-04-19 | US09663871B2 | 2017-05-30 | Nobuyuki Kobayashi; Kazuki Maeda; Koichi Kondo; Tsutomu Nanataki; Katsuhiro Imai; Jun Yoshikawa |
| A crystal production method according to the present invention includes a film formation and crystallization step of spraying a raw material powder containing a raw material component to form a film containing the raw material component on a seed substrate containing a single crystal at a predetermined single crystallization temperature at which single crystallization of the raw material component occurs, and crystallizing the film containing the raw material while maintaining the single crystallization temperature. In the film formation and crystallization step, preferably, the single crystallization temperature is 900° C. or higher. Furthermore, in the film formation and crystallization step, preferably, the raw material powder and the seed substrate are each a nitride or an oxide. | ||||||
| 68 | Epitaxial thin film solid crystal electrolyte including lithium | US14365755 | 2012-11-05 | US09649593B2 | 2017-05-16 | Hiromichi Ohta; Noriyuki Aoki |
| Provided is a solid electrolyte including an epitaxial thin film crystal made of an electrolyte containing at least lithium. | ||||||
| 69 | CARBON-BASED NANOTUBE/METAL COMPOSITE AND METHODS OF MAKING THE SAME | US15302370 | 2015-04-09 | US20170022587A1 | 2017-01-26 | Kofi W. Adu |
| A nanocomposite comprising metal and carbon-based nanotube (CNT), wherein the carbon-based nanotube comprises a doping element selected from the group consisting of boron (B), iron (Fe), zinc (Zn), nickel (Ni), cadmium (Cd), tin (Sn), antimony (Sb), Nitrogen (N) and the combination thereof, and methods of making the nanocomposite. | ||||||
| 70 | Measurement apparatus and method | US14007344 | 2012-04-05 | US09423447B2 | 2016-08-23 | Adrian Kiermasz |
| A method and apparatus for extracting the contents (39) of voids (13) and/or pores present in a semiconductor device to obtain information indicative of the nature of the voids and/or pores, e.g. to assist with metrology measurements. The method includes heating the semiconductor wafer to expel the contents of the voids and/or pores, collecting the expelled material (41) in a collector, and measuring a consequential change in mass of the semiconductor wafer (29) and/or the collector (37), to extract information indicative of the nature of the voids. This information may include information relating to the distribution of the voids and/or pores, and/or the sizes of the voids and/or pores, and/or the chemical contents of the voids and/or pores. The collector may include a condenser having a temperature-controlled surface (e.g. in thermal communication with a refrigeration unit) for condensing the expelled material. | ||||||
| 71 | Laser-irradiated thin films having variable thickness | US13740664 | 2013-01-14 | US08715412B2 | 2014-05-06 | James S. Im |
| Systems for processing thin films having variable thickness are provided. A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component. | ||||||
| 72 | Method of NiSiGe epitaxial growth by introducing Al interlayer | US13260757 | 2011-07-25 | US08501593B2 | 2013-08-06 | Miao Zhang; Bo Zhang; Zhongying Xue; Xi Wang |
| The present invention discloses a method of NiSiGe epitaxial growth by introducing Al interlayer, comprising the deposition of an Al thin film on the surface of SiGe layer, subsequent deposition of a Ni layer on Al thin film and then the annealing process for the reaction between Ni layer and SiGe material of SiGe layer to form NiSiGe material. Due to the barrier effect of Al interlayer, NiSiGe layer features a single crystal structure, a flat interface with SiGe substrate and a thickness of up to 0.3 nm, significantly enhancing interface performance. | ||||||
| 73 | Method of obtaining a CdTe or CdZnTe single crystal and the single crystal thus obtained | US10486177 | 2002-08-06 | US07537659B2 | 2009-05-26 | Robert Georges Lucien Triboulet; Said Assoumani Said Hassani |
| The invention relates to the field of CdTe or CdZnTe single crystal production and to an improved solid-phase method of obtaining large CdTe or CdZnTe crystals having an excellent crystalline structure. | ||||||
| 74 | Low-temperature metal-induced crystallization of silicon-germanium films | US11395420 | 2006-03-31 | US07501331B2 | 2009-03-10 | S. Brad Herner |
| The present invention provides for a low-temperature method to crystallize a silicon-germanium film. Metal-induced crystallization of a deposited silicon film can serve to reduce the temperature required to crystallize the film. Increasing germanium content in a silicon-germanium alloy further decreases crystallization temperature. By using metal-induced crystallization to crystallize a deposited silicon-germanium film, temperature can be reduced substantially. In preferred embodiments, for example in a monolithic three dimensional array of stacked memory levels, reduced temperature allows the use of aluminum metallization. In some embodiments, use of metal-induced crystallization in a vertically oriented silicon-germanium diode having conductive contacts at the top and bottom end is be particularly advantageous, as increased solubility of the metal catalyst in the contact material will reduce the risk of metal contamination of the diode. | ||||||
| 75 | Method for manufacturing thin film transistor | US11102765 | 2005-04-11 | US07271041B2 | 2007-09-18 | Mitsuasa Takahashi |
| Prior to converting a non-single crystal material of a semiconductor film into a single crystal material through the use of a laser beam, at least one dopant is introduced into whole of the semiconductor film. Then, the non-single crystal semiconductor film is irradiated with a laser beam to crystallize the semiconductor film. In this case, a ratio between quasi-fermi level of the single crystal material within one of transistor formation regions used to form transistors of different conductivity types and quasi-fermi level of the single crystal material within the other thereof is made to be between 0.5:1 and 2.0:1. Thus, transistors of different conductivity types are formed in the crystallized semiconductor film. | ||||||
| 76 | Laser-irradiated thin films having variable thickness | US11651305 | 2007-01-09 | US20070111349A1 | 2007-05-17 | James Im |
| A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component. | ||||||
| 77 | Method of fabricating semiconductor device | US10920316 | 2004-08-18 | US07179699B2 | 2007-02-20 | Hidekazu Miyairi; Atsuo Isobe; Tomoaki Moriwaka; Akihisa Shimomura |
| The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deteriorating, on-current from decreasing, or off-current from increasing due to a grain boundary and a semiconductor device fabricated by the fabrication method. Striped (banded) or rectangular concave and convex portions are formed. Then, a semiconductor film formed on an insulating film is irradiated with a laser beam diagonally to the longitudinal direction of concave and convex portions on the insulating film. | ||||||
| 78 | Laser-irradiated thin films having variable thickness | US10754157 | 2004-01-09 | US07164152B2 | 2007-01-16 | James Im |
| A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component. | ||||||
| 79 | Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer | US10947706 | 2004-09-23 | US06924509B2 | 2005-08-02 | Vincent Derycke; Gérald Dujardin; Andrew Mayne; Patrick Soukiassian |
| Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer.According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2×2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C≡C (4) of sp configuration, into a plane of dimers C—C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials. | ||||||
| 80 | Laser irradiation method and method for manufacturing crystalline semiconductor film | US11017900 | 2004-12-22 | US20050139786A1 | 2005-06-30 | Koichiro Tanaka; Yoshiaki Yamamoto |
| Even when the laser irradiation is performed under the same condition with the energy distribution of the beam spot shaped as appropriate, the energy given to the irradiated surface is not yet homogeneous. When a semiconductor film is crystallized to form a crystalline semiconductor film using such inhomogeneous irradiation energy, the crystallinity becomes inhomogeneous in this film, and the characteristic of semiconductor elements manufactured using this film varies. In the present invention, an irradiated object formed over a substrate is irradiated with a laser beam having the pulse width that is an order of picosecond (10−12 second) or less. | ||||||
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