| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 41 | Single crystal SiC and a method of manufacturing the same | JP17090297 | 1997-05-23 | JP3296998B2 | 2002-07-02 | 吉弥 谷野 |
| According to the invention, a complex (M) which is formed by growing a polycrystalline beta -SiC plate (2) on the surface of a single crystal alpha -SiC base material (1) by the thermal CVD method is heat-treated at a high temperature of 1,900 to 2,400 DEG C, whereby polycrystals of the polycrystalline cubic beta -SiC plate (2) are transformed into a single crystal, so that the single crystal is oriented in the same direction as the crystal axis of the single crystal alpha -SiC base material (1) and integrated with the single crystal of the single crystal alpha -SiC base material (1) to be largely grown. As a result, single crystal SiC of high quality which has a very reduced number of lattice defects and micropipe defects can be efficiently produced while ensuring a sufficient size in the term of area. |
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| 42 | Method of transformation to single crystal | JP33524399 | 1999-11-26 | JP2000256089A | 2000-09-19 | AZAD FARZIN HOMAYOUN; JONES MARSHALL G |
| PROBLEM TO BE SOLVED: To provide an improved transformation control process for transforming a polycrystalline product to a single crystal. SOLUTION: The polycrystalline product 12 is transformed to a single crystal by a solid phase process. An amount of heat is added to a first end part of the product so that a prescribed space temp. profile, which has the maximum temp. close to the melting temp. of the product, is constituted. The temp. profile is maintained so that transformation starts at the first end part. Then, heat is moved along the product toward the second end part opposed to the first end part so that the transformation proceeds along the product. | ||||||
| 43 | Method of manufacturing a ferroelectric thin film element | JP16833996 | 1996-06-07 | JP3052842B2 | 2000-06-19 | 恵一 梨本 |
| The present invention is to provide a production method of a ferroelectric thin film element comprising an epitaxial ferroelectric thin film having stable composition control, an optical smoothness of the surface, and a high crystallization. In the production method, carrying out a first solid phase epitaxial growth process where a first organometallic compound is applied on the single-crystalline substrate and heated to form a ferroelectric buffer layer on a single-crystalline substrate, having a composition different from the substrate with a film thickness of 1 nm to 40 nm; carrying out at least once a second solid phase epitaxial growth process where a second organometallic compound is applied on the ferroelectric buffer layer formed in the above process and heated to form a ferroelectric single layer thin film with a film thickness of 10 nm or more, and being thicker than the ferroelectric buffer layer. | ||||||
| 44 | A method of forming an epitaxial cobalt silicide film | JP25684094 | 1994-10-21 | JP2673104B2 | 1997-11-05 | ジェームズ・ガードナー・リヤン; トマス・ジョン・リカータ; ハーバート・レイ・ホー; ピーター・ジョン・ガイス |
| A process for forming an epitaxial cobalt silicide (CoSi2) film in a semiconductor device, comprises: (a) forming on the Si substrate (10) a layer of refractory metal (12) comprising W, Cr, Mo or mixts. or silicides thereof; (b) forming a Co layer (14); and (c) annealing the Co layer at a temp. high enough to form epitaxial CosI2 film (16) overlying the substrate. A process for forming epitaxial CoSi2 by forming a W layer, followed by a Co layer, on a Si substrate, followed by annealing at 550[deg]C. for a time long enough to form epitaxial CoSi2. | ||||||
| 45 | Nickel base superalloy sheet and manufacture | JP20748882 | 1982-11-26 | JPS5896845A | 1983-06-09 | HAABAATO EI CHIN |
| A processing sequence is described for producing specific controlled elongated oriented crystal structures in nickel base superalloys. The method is performed in the solid state. Superalloy material is provided in a dense workable form. The material is cold straight rolled and cold cross rolled with intermediate anneals. This sequence produces a particular texture or preferred orientation in the rolled article. This textured article is then directionally recrystallized to produce the desired final microstructure comprised of aligned elongated grains of a particular controllable orientation. | ||||||
| 46 | METHOD FOR PRODUCING MONOCRYSTALLINE METALLIC WIRE | PCT/RU0200461 | 2002-10-22 | WO03035915A8 | 2003-08-21 | MARKOV GENNADIJ ALEXANDROVICH |
| The invention relates to metallic articles for industrial use, more specifically to a method for producing a thin metallic monocrystalline wire having a diameter ranging from 0.01 to 5.0 mkm. The inventive method consists in carrying out the plastic deformation of a wire having a deformation rate of higher than 98 % by twisting two wires in spiral through time at a pitch angle ranging from 20 to 58° with respect to the longitudinal axis thereof and at a predetermined twisting speed through time during the thermal processing and the cleaning of the thus produced wire from polycrystalline metal residuals. Said method is also characterised in that the shear plastic deformation of the wire at a deformation rate of higher than 98 % is carried out by twisting one wire about the longitudinal axis thereof when the metal is in a yielded state in such a way that filamentary monocrystals are formed. In individual cases, the deformation of metallic wire is carried out at a temperature ranging from (-200°C) to 400 °C. All processing parameters are experimentally defined. The monocrystallinity of the wire is confirmed by X-ray analysis. In cases when the monocrystalline wire with polycrystalline residuals can not be used, the cleaning of a monocrystalline filament is carried out with the aid of a chemical method. | ||||||
| 47 | 正極の作製方法 | JP2018145807 | 2018-08-02 | JP2018166125A | 2018-10-25 | 二村 智哉; 森若 圭恵; 川上 貴洋; 桃 純平; 井上 信洋 |
| 【課題】放電容量及びエネルギー密度を高めることが可能なリチウムイオン二次電池及び その作製方法を提供する。 【解決手段】正極と、負極と、正極及び負極の間に設けられる電解質とを有するリチウム イオン二次電池であって、正極は、正極集電体と、正極集電体上に設けられる正極活物質 層とを有し、該正極活物質層は、一般式LiMPO4(Mは、Fe(II),Mn(II ),Co(II),Ni(II)の一以上)で表されるリチウム含有複合酸化物を複数有 する。リチウム含有複合酸化物は、扁平形状を有する単結晶粒であり、扁平形状を有する 単結晶粒は、b軸方向の長さがa軸方向及びc軸方向の長さより短い。また、リチウム含 有複合酸化物は、単結晶粒のb軸方向が、正極集電体の表面と交差するように、正極集電 体上に設けられる。 【選択図】図1 |
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| 48 | 正極 | JP2017043107 | 2017-03-07 | JP6383032B2 | 2018-08-29 | 二村 智哉; 森若 圭恵; 川上 貴洋; 桃 純平; 井上 信洋 |
| 49 | Measuring apparatus and method | JP2014503217 | 2012-04-05 | JP2014512005A | 2014-05-19 | エイドリアン・キエルマシュ |
| ボイド及び／又はポアの性質を示す情報を得るため、例えば計測測定を支援するために、半導体素子に存在するボイド（１３）及び／又はポアの内容物（３９）を抽出する方法及び装置である。 この方法は、ボイドの性質を示す情報を抽出するために、ボイド及び／又はポアの内容物を放出するために半導体ウェハを加熱すること、放出された物質（４１）をコレクターに集めること、半導体ウェハ（２９）及び／又はコレクター（３７）の質量の間接的変化を測定することを含む。 この情報は、ボイド及び／又はポアの分布、ボイド及び／又はポアのサイズ、及び／又は、ボイド及び／又はポアの化学的内容物に関する情報を含んでもよい。 コレクターは、放出された物質を凝結するための温度コントロールされた（例えば冷却ユニットとの熱伝達において）表面を有する凝縮器を含んでもよい。
（図５） |
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| 50 | Lithium ion secondary battery and manufacturing method for the same | JP2012058463 | 2012-03-15 | JP2012212663A | 2012-11-01 | FUTAMURA TOMOYA; MORIWAKA YOSHIE; KAWAKAMI TAKAHIRO; MOMO JUNPEI; INOUE NOBUHIRO |
| PROBLEM TO BE SOLVED: To provide a lithium ion secondary battery capable of having higher discharge capacity and higher energy density, and a manufacturing method for the same.SOLUTION: A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer provided on the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides represented by general formula LiMPO(M represents one or more of Fe(II), Mn(II), Co(II), and Ni(II)). The lithium-containing composite oxide includes a single-crystal grain with a flat shape, and the single-crystal grain with the flat shape has a length in a b-axis direction shorter than lengths in an a-axis direction and a c-axis direction. Moreover, the lithium-containing composite oxide is provided on the positive electrode current collector so that the b-axis direction of the single-crystal grain intersects with a surface of the positive electrode current collector. | ||||||
| 51 | A method of forming a polycrystalline semiconductor film | JP2002185782 | 2002-06-26 | JP4662678B2 | 2011-03-30 | 満 千田; 明人 原; 美智子 竹井 |
| There is provided the step of forming a polysilicon film by scanning a laser irradiation region while irradiating a continuous wave laser onto an amorphous silicon film formed into an island or ribbon-like shape on a substrate. If a width of a rectangle in which the amorphous silicon film is inscribed is 30 mum or less, any one condition of (1) a top end shape of a pattern is a convex shape, (2) a top end shape is a concave shape and consists of straight lines and has three corner portions at a top end side, and both angles of the corner portions on both sides of the top end shape are set to 45 degree or more, (3) a top end shape is a concave shape and consists of curved lines, and (4) a width of a top end portion is 25 mum or less, is satisfied. | ||||||
| 52 | Method of forming a single-crystal semiconductor film on the amorphous surface | JP2002527353 | 2001-09-18 | JP2004509457A | 2004-03-25 | カミンス・セオドア |
| A method of forming a single crystal semiconductor film on a non-crystalline surface is described. In accordance with this method, a template layer incorporating an ordered array of nucleation sites is deposited on the non-crystalline surface, and the single crystal semiconductor film is formed on the non-crystalline surface from the ordered array of nucleation sites. An integrated circuit incorporating one or more single crystal semiconductor layers formed by this method also is described. | ||||||
| 53 | Method for manufacturing thin film transistor | JP2002211500 | 2002-07-19 | JP2004055838A | 2004-02-19 | TAKAHASHI YOSHITOMO |
| <P>PROBLEM TO BE SOLVED: To reduce the variation of threshold voltages in p-type and n-type thin film transistors. <P>SOLUTION: Prior to the crystallization by laser, at least one kind of impurity is doped into at least the entire surface of a thin film semiconductor layer so that the ratio of Quasi-Fermi levels in the regions for forming each conductive type transistor therein is limited to 0.5-2. <P>COPYRIGHT: (C)2004,JPO | ||||||
| 54 | 希土類−鉄ガーネット単結晶体及びその製造方法 | JP2002527354 | 2001-09-18 | JPWO2002022920A1 | 2004-02-05 | 池末 明生; 柿田 進一 |
| 良質の希土類−鉄ガーネット単結晶体を効率的に提供することを目的とする。Re3Fe5−xMxO12(但し、ReはY、Bi、Ca及び原子番号62〜71のランタニド希土類元素の少なくとも1種、Mは原子番号22〜30の遷移金属元素、Al、Ga、Sc、In及びSnの少なくとも1種、0≦x<5を示す。)単結晶から実質的に構成され、小傾角粒界を形成する結晶粒子の単位面積当たりの個数(個/cm2)が0≦n≦102である希土類−鉄ガーネット単結晶体、及び希土類−鉄ガーネット単結晶体を用いたデバイスに係る。 | ||||||
| 55 | SINGLE CRYSTAL SiC AND METHOD FOR GROWING THE SAME | JP2000030763 | 2000-02-08 | JP2001220297A | 2001-08-14 | YANO KICHIYA; TANISHITA YASUKAZU |
| PROBLEM TO BE SOLVED: To obtain high-grade single crystal SiC in which strain and micropipe defect do not appear by growing the single crystal so that influence of micropipe which a single crystal substrate has is not taken over. SOLUTION: A cut face 1a of an α-SiC single crystal substrate 1 cut into a plate-like state along the face of Miller index (11-20) ±10 deg. is superposed to Miller index (220) face 2a of a β-SiC polycrystal plate 2 and these α-single crystal substrate and β-SiC polycrystal plate 2 are heat-treated to integrally grow a single crystal part 4 having crystal orientation of cut face 1a direction on the β-SiC polycrystal plate 2 on the pattern of the α-SiC single crystal substrate 1. | ||||||
| 56 | Single crystal SiC and a method of manufacturing the same | JP24543297 | 1997-09-10 | JP3043675B2 | 2000-05-22 | 吉弥 谷野 |
| According to the invention, a complex (M) which is formed by growing a polycrystalline beta -SiC plate (2) by the thermal CVD method on crystal orientation faces (2a) which are unified in one direction of plural plate-like single crystal alpha -SiC pieces (2) that are stacked and closely contacted is subjected to a heat treatment at a temperature in the range of 1,850 to 2,400 DEG C, whereby a single crystal which is oriented in the same direction as the crystal axes of the single crystal alpha -SiC pieces (2) is grown from the crystal orientation faces (2a) of the single crystal alpha -SiC pieces (2) toward the polycrystalline beta -SiC plate (2). As a result, single crystal SiC of a high quality in which crystalline nuclei, impurities, micropipe defects, and the like are not substantially generated in an interface can be produced easily and efficiently. |
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| 57 | The formation of the diamond material due to rapid heat and rapid cooling of the carbon-containing material | JP50744195 | 1995-08-09 | JPH10503747A | 1998-04-07 | ミストリー，プラビン; リウ，シェングゾング |
| (57)【要約】 ダイヤモンド材料を、炭素含有材料（１０６）を２個の電極（１０２および１０４）間の間隙にサンドイッチすることによって形成する。 高アンペア数の電流を、電力供給（１１０）によって２個の電極間に加え、炭素含有材料の急速加熱を引き起こさせる。 電流は、炭素含有材料の温度を１０００℃を上回るまで上昇させるのに十分である。 次に、炭素含有材料を、吸熱器（１３０）によって急速冷却する。 吸熱器は、電極の一方と接触させることができる。 この工程を、ダイヤモンドが形成されるまで繰り返す。 また、シールドまたは不活性ガス（１４０および１４２）をこの工程中に用いる。 | ||||||
| 58 | Control of crystal orientation of molybdenum or tungsten | JP17806096 | 1996-07-08 | JPH1025193A | 1998-01-27 | FUJII TADAYUKI; HONDA KINICHI |
| PROBLEM TO BE SOLVED: To enable the control of crystal orientation by locally heating an end of a formed material, composed of a specific polycrystalline material to grow a secondary recrystallized grains having plural crystal orientations and selectively annealing exclusively the grain having desired crystal orientation. SOLUTION: Molybdenum oxide or tungsten oxide is incorporated with calcium oxide and/or magnesium oxide to a Ca and/or Mg content of 0.007-0.90atom%. The mixture is compression molded and sintered in hydrogen atmosphere at 1600-2000 deg.C and the sintered product is subjected to hot working at 1200-1600 deg.C and then to moderate hot working at 600-1000 deg.C to obtain a formed material. The end part of the formed material is divided into 4 sections with notches and the formed protrusions A-D are locally heated at 2000-2300 deg.C to form secondary recrystallized grains having plural crystal orientations. The protrusions B-D are cut-off and the remaining protrusion A having the desired crystal orientation is annealed by heating at 2000-2300 deg.C. | ||||||
| 59 | Conversion of doped polycrystalline material to single crystal material | JP1961695 | 1995-02-08 | JPH07267790A | 1995-10-17 | KAATEISU EDOWAADO SUKOTSUTO; MEARII SUU KARIZEUSUKII; RAIONERU MONTEI REBINSON |
| PURPOSE: To provide a solid state method for converting a polycrystalline ceramic body to a single crystal body. CONSTITUTION: The solid state conversion method includes a process in which the polycrystalline body is doped with a conversion-enhancing dopant and then is heated at a prescribed temp. for a prescribed time sufficient to convert the polycrystalline body to the single crystal body. The prescribed temp. is a temp. which is lower than the melting temp. of the polycrystalline material and is higher than about one-half the melting temp. of the polycrystalline material. The conversion-enhancing dopant useful in the conversion of polycrystalline alumina to single crystal alumina(sapphire), include substances generating cations having a +3 valence, (e.g. chromium, gallium and titanium). When the polycrystalline body is heated so that the conversion enhancing dopant is added to the first portion of the polycrystalline body to a prescribed concn. and that the dopant is not added to the second part, a composite material body having the first portion which is converted to a single crystal structure and the second portion which hold a polycrystalline structure is obtd. COPYRIGHT: (C)1995,JPO | ||||||
| 60 | Solid step process for converting solid polycrystalline alumina body to sapphire body | JP22712794 | 1994-09-22 | JPH07242497A | 1995-09-19 | RAIONERU MONTEI REBUINSON; KAATEISU EDOWAADO SUKOTSUTO |
| PURPOSE: To reduce the cost efficiency by heating a solid polycrystalline alumina body forming a specific surface topography. CONSTITUTION: The surface topography 120, which consists of a groove 136 having plural wall surf aces 132 having greater lengths and widths than the average grain size of polycrystalline alumina and being disposed to intersect one another at junctions at angles of 20 to 160° between mutually adjacent wall surfaces 132, is formed on the solid polycrystalline alumina body 100. Then, this polycrystalline alumina body 100 is heated to a temperature above 1500°C and below the melting point of the polycrystalline alumina for a time sufficient to be converted to a body consisting of only sapphire. COPYRIGHT: (C)1995,JPO | ||||||
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