| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 141 | Polysilicon film forming method | US10037492 | 2002-01-03 | US06692999B2 | 2004-02-17 | Michiko Takei; Akito Hara |
| There is provided the step of forming a polysilicon film by scanning a laser irradiation region while irradiating a continuous wave laser onto an amorphous silicon film formed into an island or ribbon-like shape on a substrate. If a width of a rectangle in which the amorphous silicon film is inscribed is 30 &mgr;m or less, any one condition of (1) a top end shape of a pattern is a convex shape, (2) a top end shape is a concave shape and consists of straight lines and has three corner portions at a top end side, and both angles of the corner portions on both sides of the top end shape are set to 45 degree or more, (3) a top end shape is a concave shape and consists of curved lines, and (4) a width of a top end portion is 25 &mgr;m or less, is satisfied. | ||||||
| 142 | Rare earth-iron garnet single crystal material and method for preparation thereof and device using rare earth-iron garnet single crystal material | US10380689 | 2003-03-17 | US20030177975A1 | 2003-09-25 | Akio Ikesue; Shinichi Kakita |
| An object of the present invention is to efficiently provide a high-quality rare-earth iron garnet single crystal. The invention relates to a rare-earth iron garnet single crystal substantially composed of an Re3Fe5-xMxO12 single crystal (where Re is at least one element selected from Y, Bi, Ca, and lanthanide rare-earth elements with atomic numbers of 62 to 71; M is at least one element selected from Al, Ga, Sc, In, Sn and transition metal elements with atomic numbers of 22 to 30; and 0nullx<5), with the number per unit surface area (grains/cm2) of crystal grains that form low-angle tilt boundaries equal to 0nullnnull102; and also relates to a device in which this rare-earth iron garnet single crystal is used. | ||||||
| 143 | Fabricating artificial crystalline structures | US10040017 | 2002-01-04 | US20030129501A1 | 2003-07-10 | Mischa Megens; Pierre Wiltzius; Shu Yang |
| A method that includes exposing a photo-sensitive medium to an optical intensity pattern and then heating the exposed medium. The exposing is performed under conditions that inhibit or prevent the optical intensity pattern from producing refractive index changes in the medium. The heating stimulates a pattern of refractive index changes that is responsive to the optical intensity pattern during the exposing step. | ||||||
| 144 | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device | US09946898 | 2001-09-05 | US20020058399A1 | 2002-05-16 | Junichi Sato; Setsuo Usui; Yasuhiro Sakamoto; Yoshifumi Mori; Hideharu Nakajima |
| A method of fabricating a single crystal thin film includes the steps of: forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance very higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments. | ||||||
| 145 | Single crystal SiC | US09497799 | 2000-02-04 | US06376900B1 | 2002-04-23 | Yoshimitsu Yamada; Kichiya Tanino; Toshihisa Maeda |
| In single crystal SiC 1, growing single crystal SiC 3 is integrally formed on a surface of a single crystal hexagonal (6H type) &agr;-SiC substrate 2 used as a seed crystal. The number of micropipes 4A of the growing single crystal SiC 3 is less than that of the micropipes 4B of the single crystal &agr;-SiC substrate 2, and the thickness t3 thereof is less than the thickness t2 of the single crystal &agr;-SiC substrate 2, thereby making it possible to obtain the high quality-single crystal SiC wherein the number of the micropipes per unit area is less, thereby decreasing the distortion in the neighborhood of the micropipes. This can provide the high-quality single crystal SiC which can be practically used as a substrate wafer for fabricating a semiconductor device. | ||||||
| 146 | Method for forming diamonds from carbonaceous material | US09451265 | 1999-11-30 | US06315871B1 | 2001-11-13 | Tyrone Daulton; Roy Lewis; Lynn Rehn; Marquis Kirk |
| A method for producing diamonds is provided comprising exposing carbonaceous material to ion irradiation at ambient temperature and pressure. | ||||||
| 147 | Single crystal conversion control | US09200562 | 1998-11-27 | US06299681B1 | 2001-10-09 | Farzin Homayoun Azad; Marshall Gordon Jones |
| A polycrystalline article is converted to a single crystal in a solid-state process. Heat is applied at a first end of the article to effect a predetermined spatial temperature profile thereat having a maximum temperature approaching a melting temperature thereof. The temperature profile is maintained to initiate conversion at the first end. The heat is moved along the article toward an opposite second end to correspondingly propagate the conversion along the article. | ||||||
| 148 | Single crystal SiC and a method of growing the same | US09771556 | 2001-01-30 | US20010011519A1 | 2001-08-09 | Kichiya Tanino; Yasutsugu Tanishita |
| In the single crystal SiC according to the invention, heat treatment is performed in an inert gas atmosphere under a state where a cutting plane of a single crystal null-SiC substrate which is produced in a plate-like form by cutting along (1 1 {overscore (2)} 0) Miller index plane null10null, and (2 2 0) Miller index plane of a polycrystalline null-SiC plate are superimposed on each other, whereby single crystal having a crystal orientation of an orientation of the cutting plane is integrally grown in the polycrystalline null-SiC plate in conformity with the single crystal null-SiC substrate. According to this configuration, single crystal SiC of very high quality is obtained to which influence of micropipes of the single crystal null-SiC substrate is not transferred, thereby preventing distortion and micropipe defects from occurring. | ||||||
| 149 | Single crystal SiC and a method of producing the same | US284484 | 1999-04-23 | US6143267A | 2000-11-07 | Kichiya Tanino |
| A complex (M) which is formed by growing a polycrystalline .beta.-SiC plate 4 by the thermal CVD method on crystal orientation faces which are unified in one direction of plural plate-like single crystal .alpha.-SiC pieces 2 that are stacked and closely contacted is subjected to a heat treatment at a temperature in the range of 1,850 to 2,400.degree. C., whereby a single crystal which is oriented in the same direction as the crystal axes of the single crystal .alpha.-SiC pieces 2 is grown from the crystal orientation faces of the single crystal .alpha.-SiC pieces toward the polycrystalline .beta.-SiC plate 4. As a result, single crystal SiC of a high quality in which crystalline nuclei, impurities, micropipe defects, and the like are not substantially generated in an interface can be produced easily and efficiently. | ||||||
| 150 | Ferroelectric thin film element and production method thereof | US867842 | 1997-06-03 | US5852703A | 1998-12-22 | Keiichi Nashimoto |
| The present invention is to provide a production method of a ferroelectric thin film element comprising an epitaxial ferroelectric thin film having stable composition control, an optical smoothness of the surface, and a high crystallization. In the production method, carrying out a first solid phase epitaxial growth process where a first organometallic compound is applied on the single-crystalline substrate and heated to form a ferroelectric buffer layer on a single-crystalline substrate, having a composition different from the substrate with a film thickness of 1 nm to 40 nm; carrying out at least once a second solid phase epitaxial growth process where a second organometallic compound is applied on the ferroelectric buffer layer formed in the above process and heated to form a ferroelectric single layer thin film with a film thickness of 10 nm or more, and being thicker than the ferroelectric buffer layer. | ||||||
| 151 | Conversion of polycrystalline material to single crystal material using bodies having a selected surface topography | US126830 | 1993-09-24 | US5540182A | 1996-07-30 | Lionel M. Levinson; Curtis E. Scott |
| A solid step process for convening a polycrystalline body to a single crystal body includes the steps of forming a selected surface topography on the body and then heating the body at a temperature below its melting temperature for a time sufficient to substantially convert the polycrystalline material to single crystal material. The surface topography includes depressions or protrusions from the body having sidewalls of the polycrystalline material that are disposed to intersect one another at junctions forming relatively sharp corners, and the dimensions of the sidewalls are greater than the average grain size of the polycrystalline material. Typically alumina is the polycrystalline material and surface features include grooves or the like. The patterned alumina body with the selected surface topography is heated to a temperature between 1800.degree. and 2000.degree. C. in one or more cycles to convert the polycrystalline alumina to sapphire. | ||||||
| 152 | Method and apparatus for producing perovskite compositions | US973169 | 1992-11-06 | US5462009A | 1995-10-31 | Darryl F. Garrigus |
| A method for producing a perovskite composition from a precursor composition wherein the precursor composition is irradiated with microwaves to heat the precursor composition and convert the precursor composition to perovskite. A susceptor crucible for use in processing a perovskite precursor composition. The susceptor crucible has an inner crucible, an outer crucible surrounding said inner crucible, and a susceptor material positioned between and separating the inner and outer crucibles. | ||||||
| 153 | Process for fabricating diamond by supercritical electrical current | US909087 | 1992-07-01 | US5437243A | 1995-08-01 | Maciej J. Pike-Biegunski |
| Human-made diamond, as well as naturally found diamond, is a transparent, superhard, crystalline, and electrically nonconductive form of carbon. In this invention, an electrical current of supercritical density alone produces the transformation of graphite to diamond. The entire graphite-to-diamond transformation requires only a few millionths of a second. Using the principles of the invention, diamond can be produced in a variety of shapes, such as loose debris, rods, fibers, bars, dust, etc. In addition to diamond, Buckminster Fuller Balls, known also as C-60 carbon fullerines, are produced using the process and apparatus of the invention. | ||||||
| 154 | Method for growing diamond crystals utilizing a diffusion fed epitaxy | US728637 | 1991-07-11 | US5429069A | 1995-07-04 | Pao-Hsien Fang; Welville B. Nowak |
| A method for growing diamond crystals or films by diffusing carbon through one side of a carbon diffusable substrate, such as metal or alloy, and outdiffusing the carbon on opposite side of the substrate is disclosed. The requirements for the metal or the alloy medium are: (1) low solubility of carbon in the medium so that all carbon will not be trapped in the medium; (2) no stable compound is formed between carbon and the medium in the operating temperature region; (3) a proximity to the lattice constant of diamond; and (4) an adequate diffusion rate at the operating temperature to grow the diamond efficiently. | ||||||
| 155 | Method of making epitaxial cobalt silicide using a thin metal underlayer | US145429 | 1993-10-29 | US5356837A | 1994-10-18 | Peter J. Geiss; Thomas J. Licata; Herbert L. Ho; James G. Ryan |
| An epitaxial cobalt silicide film is formed using a thin metal underlayer, which is placed underneath a cobalt layer prior to a heating step which forms the silicide film. More specifically, a refractory metal layer comprising tungsten, chromium, molybdenum, or a silicide thereof, is formed overlying a silicon substrate on a semiconductor wafer. A cobalt layer is formed overlying the refractory metal layer. Next, the wafer is annealed at a temperature sufficiently high to form an epitaxial cobalt silicide film overlying the silicon substrate. Following this annealing step, a cobalt-silicon-refractory metal alloy remains overlying the epitaxial cobalt silicide film. This silicide is then used to form a shallow P-N junction by dopant out-diffusion. First, either a P or N-type dopant is implanted into the silicide film so that substantially none of the dopant is implanted into the underlying silicon substrate. After implanting, the dopant is out-diffused from the silicide film into the underlying silicon substrate at a drive temperature sufficiently high to form the desired P-N junction. | ||||||
| 156 | Method of producing electrical conductor | US515777 | 1990-04-26 | USRE34641E | 1994-06-21 | Osao Kamada; Shinichi Nishiyama |
| A method of producing an electrical conductor is described. The electrical conductor is made of an oxygen-free copper material having an oxygen content of not more than 50 ppm, wherein copper crystals constituting the copper material are giant crystals. These giant copper crystals are formed by heating the copper material in an inert atmosphere maintained at a temperature exceeding 800.degree. C., but below the melting point of copper for at least 15 minutes. | ||||||
| 157 | Graphoepitaxy using energy beams | US680238 | 1984-12-10 | US5122223A | 1992-06-16 | Michael W. Geis; Dale C. Flanders; Henry I. Smith |
| Improvements to graphoepitaxy include use of irradiation by electrons, ions or electromagnetic or acoustic radiation to induce or enhance the influence of artificial defects on crystallographic orientation; use of single defects; and use of a relief structure that includes facets at 70.5 and/or 109.5 degrees. | ||||||
| 158 | Growth of synthetic diamonds having altered electrical conductivity | US68068 | 1979-08-20 | US4277293A | 1981-07-07 | Richard S. Nelson; John A. Hudson; David J. Mazey |
| A method of growing a diamond crystal which comprises bombarding the diamond with a flux of carbon ions of sufficient energy to penetrate the diamond crystal and cause crystal growth which is at least predominantly internal, the temperature of the crystal being at least 400.degree. C. and less than the graphitization temperature, such that the diamond crystal structure is maintained during growth. | ||||||
| 159 | Method of making tl2 te3 | US4099960 | 1960-07-06 | US3096287A | 1963-07-02 | THEODOR RABENAU ALBRECHT KARL |
| In the production of thallium telluride, Tl2Te3, or an isomorphous mixed crystal wherein part of the thallium and/or of the tellurium is replaced by another element, by heating the component elements or compounds supplying them, at a temperature below the decomposition temperature of Tl2Te3 (about 238 DEG C.), as described and claimed in the parent Specification, crystal nuclei of a compound isomorphous with Tl2Te3 are incorporated in the reactant mixture before or during the heat treatment. Such nuclei, preferably Tl2Te3 itself, may be added in amounts up to 1% and are preferably formed in situ. This may be effected by preheating the mixture between 238 DEG and 243 DEG C., for about 30 minutes and then cooling below the decomposition temperature. According to Examples: (1) Tl and Te in proportions corresponding to Tl2Te3 were melted at 350 DEG C. then cooled to 239 DEG C. and maintained at this temperature for an hour. Crystal nuclei of Tl2Te3 where thus formed and the mixture was cooled to 235 DEG C. and kept there for 3 hours. (2) Tl and Te were melted in an argon atmosphere at 300 DEG -350 DEG C. and cooled to 237 DEG C. Crystal nuclei were added as the temperature fell from 250 DEG to 237 DEG C. (3) TlTe and Te, corresponding to Tl2Te3 were ground with Tl2Te3 crystal nuclei and shaped under 1 ton/cm.2 pressure. The body formed was heated at 230 DEG C. for 15 hours to form Tl2Te3. The thallium and/or the tellurium may be partially replaced by gallium or indium and by sulphur or selenium respectively. | ||||||
| 160 | Method of controlling crystal growth | US85192959 | 1959-06-08 | US3063816A | 1962-11-13 | LEIDHEISER JR HENRY |
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