| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 121 | DESIGN AND SYNTHESIS OF METAL OXIDE SURFACES AND INTERFACES WITH CRYSTALLOGRAPHIC CONTROL USING SOLID-LIQUID-VAPOR ETCHING AND VAPOR-LIQUID-SOLID GROWTH | US15370041 | 2016-12-06 | US20180019122A1 | 2018-01-18 | Beth S. Guiton; Lei Yu |
| The present invention provides integrated nanostructures comprising a single-crystalline matrix of a material A containing aligned, single-crystalline nanowires of a material B, with well-defined crystallographic interfaces are disclosed. The nanocomposite is fabricated by utilizing metal nanodroplets in two subsequent catalytic steps: solid-liquid-vapor etching, followed by vapor-liquid-solid growth. The first etching step produces pores, or “negative nanowires” within a single-crystalline matrix, which share a unique crystallographic direction, and are therefore aligned with respect to one another. Further, since they are contained within a single, crystalline, matrix, their size and spacing can be controlled by their interacting strain fields, and the array is easily manipulated as a single entity—addressing a great challenge to the integration of freestanding nanowires into functional materials. In the second, growth, step, the same metal nanoparticles are used to fill the pores with single-crystalline nanowires, which similarly to the negative nanowires have unique growth directions, and well-defined sizes and spacings. The two parts of this composite behave synergistically, since this nanowire-filled matrix contains a dense array of well-defined crystallographic interfaces, in which both the matrix and nanowire materials convey functionality to the material. The material of either one of these components may be chosen from a vast library of any material able to form a eutectic alloy with the metal in question, including but not limited to every material thus far grown in nanowire form using the ubiquitous vapor-liquid-solid approach. This has profound implications for the fabrication of any material intended to contain a functional interface, since high interfacial areas and high quality interfacial structure should be expected. Technologies to which this simple approach could be applied include but are not limited to p-n junctions of solar cells, battery electrode arrays, multiferroic materials, and plasmonic materials. | ||||||
| 122 | PROCESS FOR PREPARING AN EPITAXIAL ALPHA-QUARTZ LAYER ON A SOLID SUPPORT, MATERIAL OBTAINED AND USES THEREOF | US14416098 | 2013-07-22 | US20150176149A1 | 2015-06-25 | Cedric Boissiere; Adrien Carretero-Genevrier; Marti Gich; David Grosso; Clement Sanchez |
| The present invention relates to a process for preparing epitaxial α-quartz layers on a solid substrate, to the material obtained according to this process, and to the various uses thereof, especially in the electronics field. | ||||||
| 123 | High polarization energy storage materials using oriented single crystals | US12945390 | 2010-11-12 | US08894765B1 | 2014-11-25 | Wesley S. Hackenberger; Edward F. Alberta |
| A PIN-PMN-PT ferroelectric single crystal and a method of manufacture are disclosed. The PIN-PMN-PT ferroelectric single crystal is oriented and polarized along a single crystallographic direction. The PIN-PMN-PT ferroelectric single crystal ferroelectric has increased remnant polarization. | ||||||
| 124 | CRYSTAL PRODUCTION METHOD | US13866185 | 2013-04-19 | US20130263771A1 | 2013-10-10 | Nobuyuki KOBAYASHI; Kazuki MAEDA; Koichi KONDO; Tsutomu NANATAKI; Katsuhiro IMAI; Jun YOSHIKAWA |
| A crystal production method according to the present invention includes a film formation and crystallization step of spraying a raw material powder containing a raw material component to form a film containing the raw material component on a seed substrate containing a single crystal at a predetermined single crystallization temperature at which single crystallization of the raw material component occurs, and crystallizing the film containing the raw material while maintaining the single crystallization temperature. In the film formation and crystallization step, preferably, the single crystallization temperature is 900° C. or higher. Furthermore, in the film formation and crystallization step, preferably, the raw material powder and the seed substrate are each a nitride or an oxide. | ||||||
| 125 | METHOD OF NISIGE EPITAXIAL GROWTH BY INTRODUCING AL INTERLAYER | US13260757 | 2011-07-25 | US20120129320A1 | 2012-05-24 | Miao Zhang; Bo Zhang; Zhongying Xue; Xi Wang |
| The present invention discloses a method of NiSiGe epitaxial growth by introducing Al interlayer, comprising the deposition of an Al thin film on the surface of SiGe layer, subsequent deposition of a Ni layer on Al thin film and then the annealing process for the reaction between Ni layer and SiGe material of SiGe layer to form NiSiGe material. Due to the barrier effect of Al interlayer, NiSiGe layer features a single crystal structure, a flat interface with SiGe substrate and a thickness of up to 0.3 nm, significantly enhancing interface performance. | ||||||
| 126 | LASER-IRRADIATED THIN FILMS HAVING VARIABLE THICKNESS | US12754159 | 2010-04-05 | US20100187529A1 | 2010-07-29 | James Im |
| A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component. | ||||||
| 127 | BaTiO3—PbTiO3 series single crystal and method of manufacturing the same, piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator | US12124993 | 2008-05-21 | US07736433B2 | 2010-06-15 | Hiroshi Aoto; Akira Unno; Tetsuro Fukui; Akio Ikesue |
| BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity. | ||||||
| 128 | Method for processing laser-irradiated thin films having variable thickness | US11651305 | 2007-01-09 | US07691687B2 | 2010-04-06 | James S. Im |
| A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component. | ||||||
| 129 | Method of fabricating semiconductor device | US11704214 | 2007-02-09 | US07547593B2 | 2009-06-16 | Hidekazu Miyairi; Atsuo Isobe; Tomoaki Moriwaka; Akihisa Shimomura |
| The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deteriorating, on-current from decreasing, or off-current from increasing due to a grain boundary and a semiconductor device fabricated by the fabrication method. Striped (banded) or rectangular concave and convex portions are formed. Then, a semiconductor film formed on an insulating film is irradiated with a laser beam diagonally to the longitudinal direction of concave and convex portions on the insulating film. | ||||||
| 130 | Crystallization apparatus, crystallization method, and phase modulation device | US11098647 | 2005-04-05 | US07347897B2 | 2008-03-25 | Tomoya Kato; Masakiyo Matsumura; Yukio Taniguchi |
| A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality of unit areas which are arranged in a certain period and which mutually have substantially the same pattern, and an optical image forming system disposed between the phase modulation device and the non-single-crystal semiconductor film. The unit area of the phase modulation device has a reference face having a certain phase, a first area disposed in the vicinity of a center of each unit area and having a first phase difference with respect to the reference face, and a second area disposed in the vicinity of the first area and having substantially the same phase difference as that of the first phase difference with respect to the reference face. | ||||||
| 131 | Low-temperature metal-induced crystallization of silicon-germanium films | US11395420 | 2006-03-31 | US20070246764A1 | 2007-10-25 | S. Herner |
| The present invention provides for a low-temperature method to crystallize a silicon-germanium film. Metal-induced crystallization of a deposited silicon film can serve to reduce the temperature required to crystallize the film. Increasing germanium content in a silicon-germanium alloy further decreases crystallization temperature. By using metal-induced crystallization to crystallize a deposited silicon-germanium film, temperature can be reduced substantially. In preferred embodiments, for example in a monolithic three dimensional array of stacked memory levels, reduced temperature allows the use of aluminum metallization. In some embodiments, use of metal-induced crystallization in a vertically oriented silicon-germanium diode having conductive contacts at the top and bottom end is be particularly advantageous, as increased solubility of the metal catalyst in the contact material will reduce the risk of metal contamination of the diode. | ||||||
| 132 | Method of fabricating semiconductor device | US11704214 | 2007-02-09 | US20070141816A1 | 2007-06-21 | Hidekazu Miyairi; Atsuo Isobe; Tomoaki Moriwaka; Akihisa Shimomura |
| The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deteriorating, on-current from decreasing, or off-current from increasing due to a grain boundary and a semiconductor device fabricated by the fabrication method. Striped (banded) or rectangular concave and convex portions are formed. Then, a semiconductor film formed on an insulating film is irradiated with a laser beam diagonally to the longitudinal direction of concave and convex portions on the insulating film. | ||||||
| 133 | OH and H resistant silicon material | US10480042 | 2002-10-05 | US07067006B2 | 2006-06-27 | Susana Curatolo |
| A method of forming a single crystalline structure having a substantially linear response at least over the wave lengths of 1,200 to 1,700 nanometers, the resulting structure and its use as an optical media or a barrier coating. Thus, maximum obtainable optical transmission with zero attenuation is provided. There is no intrinsic material absorption. | ||||||
| 134 | Method for manufacturing thin film transistor | US11102765 | 2005-04-11 | US20050191796A1 | 2005-09-01 | Mitsuasa Takahashi |
| Prior to converting a non-single crystal material of a semiconductor film into a single crystal material through the use of a laser beam, at least one dopant is introduced into whole of the semiconductor film. Then, the non-single crystal semiconductor film is irradiated with a laser beam to crystallize the semiconductor film. In this case, a ratio between quasi-fermi level of the single crystal material within one of transistor formation regions used to form transistors of different conductivity types and quasi-fermi level of the single crystal material within the other thereof is made to be between 0.5:1 and 2.0:1. Thus, transistors of different conductivity types are formed in the crystallized semiconductor film. | ||||||
| 135 | Method of obtaining a cdte or cdznte single crystal and the single crystal thus obtained | US10486177 | 2002-08-06 | US20050115489A1 | 2005-06-02 | Robert Triboulet; Said Said Hassani |
| The invention relates to the field of CdTe or CdZnTe single crystal production and to an improved solid-phase method of obtaining large CdTe or CdZnTe crystals having an excellent crystalline structure. | ||||||
| 136 | Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer | US10947706 | 2004-09-23 | US20050035380A1 | 2005-02-17 | Vincent Derycke; Gerald Dujardin; Andrew Mayne; Patrick Soukiassian |
| Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2x2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C≡C (4) of sp configuration, into a plane of dimers C-C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials. | ||||||
| 137 | BaTiO3-PbTiO3 series single crystal and method of manufacturing the same piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator | US10014355 | 2001-12-14 | US06783588B2 | 2004-08-31 | Hiroshi Aoto; Akira Unno; Tetsuro Fukui; Akio Ikesue |
| BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity. | ||||||
| 138 | Oh and h resistant silicon material | US10480042 | 2003-12-09 | US20040165858A1 | 2004-08-26 | Susana Curatolo |
| A method of forming a single crystalline structure having a substantially linear response at least over the wave lengths of 1,200 to 1,700 nanometers, the resulting structure and its use as an optical media or a barrier coating. Thus, maximum obtainable optical transmission with zero attenuation is provided. There is no intrinsic material absorption. | ||||||
| 139 | SEMICONDUCTOR THIN FILM AND METHOD OF FABRICATING SEMICONDUCTOR THIN FILM, APPARATUS FOR FABRICATING SINGLE CRYSTAL SEMICONDUCTOR THIN FILM, AND METHOD OF FABRICATING SINGLE CRYSTAL THIN FILM, SINGLE CRYSTAL THIN FILM SUBSTRATE, AND SEMICONDUCTOR DEVICE | US09946898 | 2001-09-05 | US06746942B2 | 2004-06-08 | Junichi Sato; Setsuo Usui; Yasuhiro Sakamoto; Yoshifumi Mori; Hideharu Nakajima |
| A method of fabricating a single crystal thin film includes: forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments. | ||||||
| 140 | Laser annealing apparatus | US10305339 | 2002-11-27 | US20040099209A1 | 2004-05-27 | Tatsuki Okamoto; Tetsuya Ogawa; Yukio Sato; Junichi Nishimae |
| A laser optical system for directing a rectangular laser beam onto an amorphous or polycrystalline silicon film comprises linear beam forming means for forming the laser beams radiated from a plurality of laser oscillators linearly to be applied on the silicon film, the optical axes of the laser beams from the laser oscillators to linear beam forming means on the almost same plane, and linear beams are arrayed with a certain interval linearly on the amorphous or polycrystalline silicon film formed on a substrate. By providing the interval between the radiating laser beams, the laser optical system comprising the plurality of linear beam forming means can be arranged with a distance, thereby preventing the interference between optical parts. | ||||||
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