Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes专利检索-异质外延外延生长微电子学专利检索查询-专利查询网

Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes

阅读：491发布：2022-06-22

专利汇可以提供Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes专利检索，专利查询，专利分析的服务。并且There are disclosed diodes for detection and diodes for emission of near-infrared radiation. Such a diode employs an epitaxial layer of n-type cadmium tin phosphide grown on a p-type InP substrate, which is the light-transmitting window of the device. Also disclosed is a tipping technique of epitaxial growth in which the conditions of the substrate crystal and the tin-rich melt are controlled to obtain high quality heterojunctions. A mixture of tin, phosphorus, and cadmium is prepared in a separate saturation procedure to minimize substrate degradation during epitaxial growth. The indium phosphide substrates are high quality and p-type with predominantly cadmium or zinc doping. In some diodes the CdSnP2 epitaxial layers contain some indium traceable to dissolution of the indium phosphide substrate by the tin solution prior to nucleation and growth of the epitaxial layer. Later diodes grown from solutions containing controlled amounts of indium intentionally added to the presaturated melt, efficiently emitted infrared light near 1.0 Mu .，下面是Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes专利的具体信息内容。

权利要求

1. A DETECTOR FORNEAR-INFRARED RADIATION OF THE TYPE COMPRISING A CEYSTALLINE BODY OF CDSNP2 IN WHICH SAID RADIATION CAN BE ABSORBED AND MEANS INCLUDING ELECTRODES ATTCHED TO SAID DEVICE FOR COUPLING AN ELECTRICAL RESPONSE OUT OF SAID DEVICE IN RESPONSE TO THE INCIDENCE OF SAID RADIATION ON SAID BODY, SAID DETECTOR BEING IMPROVED IN THAT IT INCLUDES AN INP CRYSTAL ORIENTED WITH RESPECT TO SAID BODY TO INTERCEPT SAID RADIATION FIRST, SAID CRYSTAL AND SAID BODY FORMING A HETEROJUNCTION NEAR WHICH SAID RADIATION IS ABSORBED, ONE OF SAID ELECTRODES BEING ATTACHED TO SAID INP CRYSTAL AND ANOTHER OF SAID ELECTRODES BEING ATTACHED TO SAID CDSNP2 BODY FOR COUPLING SAID ELECTRICAL RESPONSE FROM SAID DEVICE.

2. A detector according to claim 1 in which the crystalline body of CdSnP2 is an epitaxial single crystal layer, the InP layer forming a single crystal substrate for said epitaxial layer.

3. A detector according to claim 1 in which the crystalline body of a composition including cadmium, tin, indium and phosphorus is an epitaxial single crystal layer, the InP layer forming a single crystal substrate for said epitaxial layer.

4. A detector for near-infrared radiation, comprising a single-crystal substrate of InP, a single-crystal layer of CdSnP2 containing substantial amounts of indium, and first and second electrodes ohmically contacting said substrate and said layer respectively.

5. A light-emitting diode of the type comprising a crystalline body of cadmium tin phosphide (CdSnP2) and electrode means for electrically coupling to said body, said diode being characterized by a single crystal of p-type indium phosphide (InP) forming a substantially strain-free heterojunction with said body, said electrode means providing electrical coupling through said crystal and said body in series, said cadmium tin phosphide body being n-type and containing at least one p-type dopant that tends to compensate it.

6. A detector for Near-infrared radiation of the type comprising a crystalline body of a composition including cadmium, tin, indium and phosphorus in which said radiation can be absorbed and means including electrodes attached to said device for coupling an electrical response out of said device in response to the incidence of said radiation on said body, said detector being improved in that it includes an InP crystal oriented with respect to said body to intercept said radiation first, said crystal and said body forming a heterojunction near which said radiation is absorbed, one of said electrodes being attached to said InP crystal and another of said electrodes being attached to said body of composition including cadmium, tin, indium and phosphorus for coupling said electrical response from said device.

7. A detector for near-infrared radiation, comprising a single crystal substrate of InP, a single crystal layer of a composition including cadmium, tin, indium and phosphorus and forming a heterojunction with said substrate, said indium being present in said layer with a graded concentration decreasing with distance from said heterojunction, and first and second electrodes contacting said substrate and said layer respectively.

8. A light-emitting diode of the type comprising a quaternary crystalling body of a composition of cadmium tin, indium and phosphorus in proportions selected to determine the peak electroluminescent wavelength and spectral distribution of the diode and electrode means for electrically coupling to said body, said diode being characterized by a single crystal of p-type indium phosphide (InP) forming a substantially strain-free heterojunction with said body, said electrode means providing electrical coupling through said crystal and said body in series, said quarternary body consisting of cadmium, tin, indium and phosphorus, being n-type and containing at least one p-type dopant that tends to compensate it.

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Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes

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