Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes专利检索-异质外延外延生长微电子学专利检索查询-专利查询网

Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes

阅读：869发布：2022-06-23

专利汇可以提供Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes专利检索，专利查询，专利分析的服务。并且There are disclosed diodes for detection and diodes for emission of near-infrared radiation. Such a diode employs an epitaxial layer of n-type cadmium tin phosphide grown on a p-type InP substrate, which is the light-transmitting window of the device. Also diclosed is a tipping technique of epitaxial growth in which the conditions of the substrate crystal and the tin-rich melt are controlled to obtain high quality heterojunctions. A mixture of tin, phosphorus, and cadmium is prepared in a separate saturation procedure to minimize substrate degradation during epitaxial growth. The indium phosphide substrates are high quality and ptype with predominantly cadmium or zinc doping. In some diodes the CdSnP2 epitaxial layers contain some indium traceable to dissolution of the indium phosphide substrate by the tin solution prior to nucleation and growth of the epitaxial layer. Later diodes grown from solutions containing controlled amounts of indium intentionally added to the presaturated melt, efficiently emitted infrared light near 1.0 Mu .，下面是Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes专利的具体信息内容。

权利要求

1. A PROCESS FOR GROWING A HETEROJUNCTION DEVICE COMPRISING THE STEPS OF INTRODUCING CADMIUM TIN AND PHOSPHORUS INITIALLY INTO THE LOWER END OF AN ELONGATED GENERALLY VERTICALLY ORIENTED CRUCIBLE AND THE PHOSPHORUS AND CADMIUM BEING PRESENT IN RESPECTIVE ATOMIC PROPORTIONS GREATER THAN APPROXIMATELY 2:1 AND THE TIN BEING PRESENT IN AN ATOMIC PROPORTION TO THE CADMIUM SUBSTANTIALLY GREATER THAN 10:1, MOUNTING A SINGLE CRYSTAL OF INP IN THE UPPER END OF SAID CRUCIBLE AND CLOSING SAID CRUCIBLE, HEATING SAID CRICIBLE TO A TEMPERATURE IN THE RANGE FROM 526* CENTIGRADE TO 610* CENTIGRADE WHILE MAINTAINING SAID ENDS AT SUBSTANTIALLY EQUAL TEMPERATURES TO PRODUCE A HOMOGENEOUS SOLUTION OF CD, SN AND P, LOWERING THE TEMPERATURE TO A TEMPERATURE IN THE RANGE FROM 450* CENTIGRADE TO 510* CENTIGRADE, TIPPING THE CRUCIBLE TO BRING THE SOLUTION INTO CONTACT WITH THE CRYSTAL,

2. A process according to claim 1, the electrode-attaching step including contacting the original InP crystal with a eutectic solution of indium and zinc, and zinc having a 5 percent atomic proportion in the eutectic solution.

3. A process according to claim 1 in which, prior to the introducing step, the cadmium, tin and phosphorus are pre-melted together in a sealed container at a temperature in a range from about 550* Centigrade to about 650* Centigrade.

4. A process according to claim 3 in which the pre-melted cadmium, tin and phosphorus are associated with significant amounts of at least one p-type dopant.

5. A process according to claim 4 in which the p-type dopant is lithium.

6. A process according to claim 4 in which the p-type dopant is copper.

7. A process according to claim 4 in which the p-type dopant is silver.

8. A process according to claim 4 in which the pre-melted cadmium, tin and phosphorus are associated with significant amounts of the p-type dopants lithium, silver, and copper.

9. A process for growing a heterojunction device, comprising the steps of introducing cadmium, tin, indium and phosphorus initially into the lower end of an elongated, generally vErtically oriented crucible, mounting a single crystal of InP in the upper end of said crucible and closing said crucible, heating said crucible to a temperature in excess of 526* Centigrade while maintaining said ends at substantially equal temperatures to produce a homogeneous solution of Cd, Sn, P and In, lowering the temperature to a temperature in the range from 450* Centigrade to 510* Centrigrade, tipping the crucible to bring the solution into contact with the crystal, inducing epitaxial growth by cooling the furnace at a rate in the range from about 1.0* Centigrade per hour to about 20* Centigrade per hour while maintaining said ends at substantially equal temperatures, removing the resulting substantially single crystal structure from the excess reactants, and, attaching respective electrodes to the original crystal and the grown region of said structure.

10. A process according to claim 1 in which, prior to the introducing step, the cadmium, tin, phosphorus and indium are premelted together in a sealed container at a temperature in a range from about 550* Centigrade to about 650* Centigrade.

11. A process according to claim 10 in which the premelted cadmium, tin, phosphorus and indium are associated with significant amounts of at least one p-type dopant.

说明书全文

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Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes

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