Dielectric optical waveguides and technique for fabricating same专利检索-异质外延外延生长微电子学专利检索查询-专利查询网

Dielectric optical waveguides and technique for fabricating same

阅读：937发布：2022-06-26

专利汇可以提供Dielectric optical waveguides and technique for fabricating same专利检索，专利查询，专利分析的服务。并且A method of fabricating dielectric optical waveguides comprises the steps of: (1) fabricating a single or double heterostructure from the GaAs-AlGaAs system preferably by liquid phase epitaxy or molecular beam epitaxy; (2) forming a native oxide layer on the top surface of the heterostructure by anodization in H2O2; (3) removing a portion of the oxide layer to form a mask and hence to define the waveguide shape in the direction of light propagation; and (4) forming a mesa-like structure with optically flat side walls by etching at a slow rate in Br2-CH3OH. After step (4) two alternative techniques leading to structurally different waveguides may be followed. In one technique, an AlGaAs layer is epitaxially grown over the mesa to form a two dimensional waveguide. In the other technique, the edges of the active region of an AlGaAs double heterostructure are differentially etched in a neutral solution of H2O2. The latter step is particularly useful in the fabrication of active devices because the resulting structure is self-masking, thereby facilitating the formation of electrical contacts.，下面是Dielectric optical waveguides and technique for fabricating same专利的具体信息内容。

权利要求

2. The method of claim 1 wherein said native oxide forming step (b) comprises the steps of bringing said major surface into contact with an electrolyte bath containing a solution of H2O2 in water, making said heterostructure an anode and a noble metal a cathode therein, applying a voltage between said anode and cathode for a time period sufficient to form on said major surface a native oxide layer of the desired thickness, removing said heterostructure from said bath and subsequently drying said heterostructure.

3. The method of claim 2 wherein said electrolyte bath comprises a solution of about 30 percent H2O2 and 70 percent H2O with a pH in the range of about 1 to 6.

4. The method of claim 1 wherein said heterostructure is epitaxially grown on a (100) surface of a GaAs substrate having its (011) cleavage plane perpendicular to the direction of light to be guided therein, and wherein said etching produces optically flat surfaces preferentially along (111) crystallographic planes.

5. The method of claim 1 wherein said heterostructure is a double heterostructure comprising at least one AlyGa1 yAs middle layer disposed between and contiguous with a pair of AlGaAs outer layers comprising AlxGa1 xAs and AlzGa1 zAs, y < x and z, and including the additional step of: bringing said double heterostructure into contact with a solution of H2O2 having a pH in the range of about 6 to 8, said latter solution being effective to differentially etch a portion of said middle layer and to form a pedestal-like mesa in which the width of said middle layer is smaller than the corresponding width of said outer layers, so that said outer layers overhang said middle layer and form air gaps therebetween.

6. The method of claim 5 wherein the pH of said solution is approximately 7.05.

7. The method of claim 5 wherein y 0 and said middle layer comprises GaAs.

8. The method of claim 5 wherein said solution of H2O2 is agitated while in contact with said heterostructure.

9. A method of fabricating a dielectric waveguide comprising the steps of: (a) epitaxially growing on a GaAs substrate a double heterostructure comprising at least one AlyGa1 yAs middle layer formed between and contiguous with a pair of AlGaAs outer layers comprising AlxGa1 xAs and AlzGa1 zAs, y < x and z, said middle layer being adapted for the propagation of light therethrough; (b) forming a native oxide layer on the topmost AlGaAs layer of said double heterostructure by submersing said double heterostructure in an electrolyte bath comprising a solution of H2O2 buffered with an acid, making said double heterostructure the anode and a noble metal the cathode across which a voltage is applied for a time period sufficient to grow a native oxide layer of the desired thickness, removing said double heterostructure from said bath and subsequently drying said heteroStructure by heating same; (c) removing selected portions of said oxide layer thereby forming from the remaining portions thereof a mask having a predetermined shape; (d) forming a mesa from said double heterostructure by bringing same into contact with a bromine methanol solution containing approximately 0.05 to 0.1 percent bromine by volume, thereby etching away at a relatively slow rate those portions of said heterostructure not covered by said mask, said etching being effective to form optically flat surfaces on opposite side walls of said mesa; and (e) bringing said mesa into contact with a solution of H2O2 having pH in the range of about 6 to 8 and simultaneously agitating said solution, said latter agitated solution being effective to differentially etch said middle layer at a faster rate than said outer layers, thereby to form a pedestal-like mesa structure in which the width of said middle layer is less than the corresponding width of said outer layers, so that said outer layers overhang said middle layer and form air gaps therebetween.

10. The method of claim 9 wherein y 0 and said middle layer comprises GaAs.

11. The method of claim 9 wherein said H2O2 solution of step (e) comprises a solution of about 30 percent H2O2 in water which is buffered with a base to a pH of approximately 7.05.

12. The method of claim 11 wherein said base comprises ammonium hydroxide.

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