Semiconductor laser device and method for manufacturing the same
阅读：802发布：2022-06-28
专利汇可以提供Semiconductor laser device and method for manufacturing the same专利检索，专利查询，专利分析的服务。并且A semiconductor laser device includes an n-type direct transition III-V Group compound semiconductor substrate, another n-type III-V Group compound semiconductor epitaxial growth layer formed on a principal plane of said semiconductor substrate and having a wider forbidden gap than the same, a p-type impurity diffusion layer which reaches said semiconductor substrate through a center portion of said epitaxial growth layer and extends to a pair of opposing end faces of the hetero-junction element, an electrode provided on the surface of said p-type impurity diffusion layer, and another electrode provided on the surface opposite thereto of said semiconductor substrate, a pair of opposing end faces of the hetero-junction element, being parallel to each other and mirror polished, thereby forming a laser resonator.，下面是Semiconductor laser device and method for manufacturing the same专利的具体信息内容。
2. A semiconductor laser device according to claim 1, wherein said n-type direct transition III-V compound semiconductor is GaAs and said III-V Group compound semiconductor having a wider forbidden gap is GaxAl1 xAs where 0.5>x>0.3.
3. A semiconductor laser device according to claim 1, wherein said n-type direct transition III-V Group compound semiconductor is GaAs and said III-V Group compound semiconductor having a wider forbidden gap is GaAsP.
4. A semiconductor laser device according to claim 1, wherein the p-type diffusion layer provided within said n-type direct transition III-V Group compound semiconductor has a thickness not exceeding 2 Mu .
5. A semiconductor lasEr device according to claim 1, further including an impurity selective diffusion mask containing phosphosilicate glass provided on the surface of said substrate on which said positive electrode is provided.
6. A semiconductor laser device comprising: a semiconductor crystal having therein a hetero-junction plane formed of a first conductivity type direct transition III-V Group compound semiconductor substrate and a first conductivity type III-V Group compound epitaxial growth layer having a wider forbidden gap in its electron energy transfer characteristic than said substrate, said crystal having a first pair of substantially parallel opposing end faces each of which is perpendicular to said hetero-junction plane; a diffusion layer of a second conductivity type semiconductor material opposite to said first conductivity type provided within said crystal from a first surface thereof and being bounded by said pair of end faces in a first direction parallel to said first surface of said crystal, while being bounded by first and second portions of said substrate and said epitaxial growth layer in a second direction parallel to said first surface of said crystal and perpendicular to said first direction, said diffusion layer extending into said substrate through said epitaxial layer; a first electrode provided on said first surface of said crystal and contacting said diffusion layer; a second electrode provided on a second surface of said crystal parallel to said first surface and spaced from said diffusion layer provided in said crystal.
7. A semiconductor laser device according to claim 6, further including a layer of phosphosilicate glass formed on said first surface of said crystal adjacent said first electrode.
8. A semiconductor laser device according to claim 6, wherein said first conductivity type compound is an n-type compound and wherein said second conductivity type layer is a p-type layer.
9. A semiconductor laser device according to claim 8, wherein said n-type direct transition III-V compound semiconductor is GaAs and said III-V Group compound semiconductor having said wider forbidden gap is GaxAl1 xAs, where 0.5 > x > 0.3.
10. A semiconductor laser device according to claim 8, wherein said n-type direct transition III-V Group compound semiconductor is GaAs and said III-V Group compound semiconductor having said wider forbidden gap is GaAsP.
11. A semiconductor laser device according to claim 8, wherein said p-type diffusion layer provided within said n-type direct transition III-V Group compound semiconductor has a thickness not exceeding 2 microns.
12. A semiconductor laser device according to claim 1, wherein the width of said laser device is smaller than 3 microns.
13. A semiconductor laser device comprising: an element body for producing coherent light upon the application of a prescribed voltage thereacross, said element body comprising a semiconductor crystal having a hetero-junction plane therein consisting of an-type direct transition III-V group compound semiconductor substrate and an n-type III-V group compound epitaxial growth layer having a wider forbidden gap than said III-V group compound semiconductor substrate, said crystal body having means for forming an optical laser resonator cavity therein comprising a pair of opposing end faces of said semiconductor crystal which are substantially parallel to each other and perpendicular to said hetero-junction plane, and means for generating light by the injection of carriers therein and for confining both electrons and light in a prescribed direction comprising a p-type diffusion layer provided within said semiconductor crystal from one surface thereof, so as to substantially extend to said pair of end faces in a direction perpendicular thereto and so as to not extend to a pair of faces perpendicular to said end faces in the direction parallel thereto, extending into saiD n-type direct transition III-V group compound semiconductor substrate through said n-type III-V compound epitaxial growth layer; and means for coupling said prescribed voltage to said element body for initiating the generation of laser emission therefrom comprising a positive electrode provided on said diffusion layer surface, and a negative electrode provided on the surface, having no diffusion layer provided, of said n-type direct transistion III-V group compound semiconductor substrate.
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