Composite structure of zinc oxide deposited epitaxially on sapphire专利检索-异质外延外延生长微电子学专利检索查询-专利查询网

Composite structure of zinc oxide deposited epitaxially on sapphire

阅读：598发布：2022-07-01

专利汇可以提供Composite structure of zinc oxide deposited epitaxially on sapphire专利检索，专利查询，专利分析的服务。并且Composite heteroepitaxial structures of single crystal zinc oxide epitaxially deposited in a layer on a single crystal substrate of alpha-aluminum oxide (sapphire) and process for producing desired orientations of the zinc oxide single crystal layer corresponding to the orientation of the sapphire substrate surface.，下面是Composite structure of zinc oxide deposited epitaxially on sapphire专利的具体信息内容。

权利要求

2. The composite according to claim 1 in which the order of said zinc oxide layer is predetermined by the orientation of the sapphire substrate.

3. The composite according to claim 2 in which the plane of orientation of said zinc oxide layer is parallel to the plane of orientation of said sapphire substrate.

4. The composite according to claim 2 in which the C-axis of said zinc oxide layer is parallel to the deposition surface of said sapphire substrate.

5. The composite according to claim 2 in which the C-axis of said deposit is normal to the orientation of the deposition surface of said substrate.

6. The composite according to claim 2 in which the orientation of the deposition surface of said substrate plane is selected in the zone including the planes (11.2), (11.3) and (11.4) or equivalent planes and the resulting orientation of the deposit of zinc oxide on said substrate is substantially parallel to the (41.2), (10.0) and (41.2), respectively, or equivalent planes (41.2), (10.0) and (41.2).

7. The composite according to claim 1 in which the deposition surface of the sapphire substrate is parallel to the (01.2) plane including equivalent planes (10.2), (11.2) and said layer is parallel to the (11.0) plane including equivalent planes (11.0).

8. The composite according to claim 1 in which said layer is greater than 3 microns in thickness.

9. A process for producing an epitaxial deposit of monocrystalline zinc oxide having bulk crystal characteristics and being substantially free of polycrystalline material on a substrate of monocrystalline sapphire comprising: a. disposing a zinc oxide source material and said sapphire substrate for vapor transport; b. heating said source material to a temperature of from 200* C to the melting point of zinc oxide to produce zinc oxide vapor; and c. transporting said zinc oxide vapor by means of a gas taken from the group consisting of hydrogen, helium, argon and nitrogen to deposit zinc oxide epitaxially on said substrate.

10. The process according to claim 9 in which said gas is hydrogen containing 0.1 to 20 percent by volume hydrogen chloride.

11. The process of claim 9 in which said substrate is provided with a deposition surface having an orientation selected to produce a zinc oxide deposit having a predetermined orientation.

12. The process of claim 9 in which the temperature of the zinc oxide source material is maintained at approximately 825* C and the temperature of the substrate is maintained at approximately 775* C.

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Composite structure of zinc oxide deposited epitaxially on sapphire

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