| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 1 | 具有永久偶极层的透明石墨烯导体 | CN201180054385.4 | 2011-11-10 | CN103201106B | 2015-07-08 | 巴巴罗斯·欧伊尔迈兹; 倪广鑫; 郑毅 |
| 一种透明导体包括：石墨烯层和在所述石墨烯层上用来静电掺杂所述石墨烯层的永久偶极层。 | ||||||
| 2 | 石墨烯的制备方法 | CN201480071372.1 | 2014-12-24 | CN105849040A | 2016-08-10 | 柳光铉; 孙权男; 权元钟; 李佶宣 |
| 本发明公开了一种石墨烯的制备方法，该方法能够通过简化的工艺制备具有较小的厚度和大面积以及产生的缺陷得到减少的石墨烯。所述石墨烯的制备方法包括：形成包含碳基材料和分散剂的分散液的步骤，所述碳基材料包含未氧化石墨；以及使所述分散液连续地穿过高压均质机的步骤，所述高压均质机包括入口、出口和用于入口和出口之间的连接的具有微米级直径的微通道，其中，当所述碳基材料在施加剪切力下穿过微通道时，该碳基材料被剥离，从而形成具有纳米级厚度的石墨烯。 | ||||||
| 3 | 具有永久偶极层的透明石墨烯导体 | CN201180054385.4 | 2011-11-10 | CN103201106A | 2013-07-10 | 巴巴罗斯·欧伊尔迈兹; 倪广鑫; 郑毅 |
| 一种透明导体包括：石墨烯层和在所述石墨烯层上用来静电掺杂所述石墨烯层的永久偶极层。 | ||||||
| 4 | 一种石墨烯材料的分级方法 | CN201510740524.9 | 2015-10-30 | CN105314627A | 2016-02-10 | 李玲; 周忠福; 郝福瑞; 童磊; 胡琪卉; 张晓玉; 俞健舒; 王云龙; 王会利; 王清露; 张泽汇; 张家平 |
| 本发明一种石墨烯材料的分级方法，包括以下步骤：(1)取石墨烯材料，加入溶剂，搅拌后得到浓度为1—20mg/mL的石墨烯材料分散液A；(2)在0—5℃的条件下，对石墨烯材料分散液A进行一级以上的离心分级处理。本发明利用不同尺寸的石墨烯在溶剂中的分散性不同并结合离心分级实现石墨烯材料的分级，石墨烯在有机溶剂中的去质子化效应减弱或者去除了羰基效应，使得形成的负电荷能够保持体系的稳定性，所以，静电排斥效应的减弱并不能阻断范德华力，从而使得石墨烯片沉降，而离心又同时加速了沉降过程，故能实现快速分级。 | ||||||
| 5 | Carbon material originating from graphite and method of producing same | EP94301364.9 | 1994-02-25 | EP0613130B1 | 1998-09-02 | Ebbesen, Thomas, c/o NEC Corporation; Tanigaki, Katsumi, c/o NEC Corporation; Hiura, Hidefumi, c/o NEC Corporation |
| A novel carbon material is obtained by bending at least one carbon atom layer of graphite in at least one selected region along either, or both, of lines I and II in Fig. 1. The bending can be accomplished by scanningly picking the carbon atom layer(s) with a probe of an atomic force microscope or another scanning microscope. The obtained carbon material has at least one round bend having a width of 0.1-10 nm and at least one flap region having a triangular, rectangular or still differently polygonal shape in plan view. When the carbon atom layer(s) is bent with very small radii of curvature, a finely striped ridge-and-groove structure appears in the round bend. The physical properties of the obtained carbon material are uniquely determined by the direction(s) of bending, width of each bend, shape and size of each flap region and the stripe pitch of the ridge-and-groove structure. |
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| 6 | Carbon nanotube-graphene hybrid transparent conductor and field effect transistor | US13301943 | 2011-11-22 | US09177688B2 | 2015-11-03 | Ageeth A. Bol; Bhupesh Chandra; Amal Kasry; Ahmed Maarouf; Glenn J. Martyna; George S. Tulevski |
| A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The method includes depositing nanotube film over a substrate to produce a layer of nanotube film, removing impurities from a surface of the layer of nanotube film not contacting the substrate to produce a cleaned layer of nanotube film, depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film, and removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance. Another method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate. | ||||||
| 7 | Transparent conductor | US13882451 | 2011-11-10 | US09082523B2 | 2015-07-14 | Barbaros Özyilmaz; Guang Xin Ni; Yi Zheng |
| A transparent conductor comprising: a graphene layer and a permanent dipole layer on the graphene layer configured to electrostatically dope the graphene layer. | ||||||
| 8 | MATERIAL INCLUDING GRAPHENE AND AN INORGANIC MATERIAL AND METHOD OF MANUFACTURING THE MATERIAL | US12956964 | 2010-11-30 | US20110129675A1 | 2011-06-02 | Jae-young CHOI; Won-mook CHOI; Duk-hyun CHOI; Sang-woo KIM; Kyung-sik SHIN |
| A material including: graphene; and an inorganic material having a crystal system, wherein a crystal plane of the inorganic material is oriented parallel to the (0001) plane of the graphene. The crystal plane of the inorganic material has an atomic arrangement of a hexagon, a tetragon, or a pentagon. | ||||||
| 9 | Carbon material originating from graphite and method of producing same | US784523 | 1997-01-17 | US5925465A | 1999-07-20 | Thomas Ebbesen; Hidefumi Hiura; Katsumi Tanigaki |
| A novel carbon material is obtained by bending at least one carbon atom layer of graphite in at least one selected region along either, or both, of lines I and II in FIG. 1. The bending can be accomplished by scanningly picking the carbon atom layer(s) with a probe of an atomic force microscope or another scanning microscope. The obtained carbon material has at least one round bend having a width of 0.1-10 nm and at least one flap region having a triangular, rectangular or still differently polygonal shape in plan view. When the carbon atom layer(s) is bent with very small radii of curvature, a finely striped ridge-and-groove structure appears in the round bend. The physical properties of the obtained carbon material are uniquely determined by the direction(s) of bending, width of each bend, shape and size of each flap region and the stripe pitch of the ridge-and-groove structure. | ||||||
| 10 | Preparation method of graphene | US15039655 | 2014-12-24 | US09950930B2 | 2018-04-24 | Kwang Hyun Yoo; Kwon Nam Sohn; Won Jong Kwon; Kil Sun Lee |
| Disclosed herein is a preparation method of graphene, capable of preparing graphene having a smaller thickness and a large area, and with reduced defect generation, by a simplified process. The preparation method of graphene includes forming dispersion including a carbon-based material including unoxidized graphite, and a dispersant; and continuously passing the dispersion through a high pressure homogenizer including an inlet, an outlet, and a micro-channel for connection between the inlet and the outlet, having a diameter in a micrometer scale, wherein the carbon-based material is exfoliated, as the material is passed through the micro-channel under application of a shear force, thereby forming graphene having a thickness in nanoscale. | ||||||
| 11 | Methods for forming a carbon nanotube-graphene hybrid film on a substrate | US14820028 | 2015-08-06 | US09887361B2 | 2018-02-06 | Ageeth A. Bol; Bhupesh Chandra; Amal Kasry; Ahmed Maarouf; Glenn J. Martyna; George S. Tulevski |
| A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. A method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate. | ||||||
| 12 | Carbon Nanotube-Graphene Hybrid Transparent Conductor and Field Effect Transistor | US14820028 | 2015-08-06 | US20150349264A1 | 2015-12-03 | Ageeth A. Bol; Bhupesh Chandra; Amal Kasry; Ahmed Maarouf; Glenn J. Martyna; George S. Tulevski |
| A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. A method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate. | ||||||
| 13 | Carbon Nanotube-Graphene Hybrid Transparent Conductor and Field Effect Transistor | US13301943 | 2011-11-22 | US20130130037A1 | 2013-05-23 | Ageeth A. Bol; Bhupesh Chandra; Amal Kasry; Ahmed Maarouf; Glenn J. Martyna; George S. Tulevski |
| A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The method includes depositing nanotube film over a substrate to produce a layer of nanotube film, removing impurities from a surface of the layer of nanotube film not contacting the substrate to produce a cleaned layer of nanotube film, depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film, and removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance. Another method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate. | ||||||
| 14 | METHOD OF CONTROLLING NUMBER OF GRAPHENE LAYERS | US13167933 | 2011-06-24 | US20120021249A1 | 2012-01-26 | Hyeon-jin SHIN; Jae-Young CHOI; Gang-hee HAN; Young-hee LEE |
| A method of controlling the number of layers of graphene layers includes forming graphene on a first surface of a first substrate, and forming a second substrate on a second surface of the first substrate; and irradiating the graphene with light to cause constructive Fresnel interference, wherein a multilayer structure or non-uniform graphene structure formed on the a surface of the graphene is removed by the constructive Fresnel interference. | ||||||
| 15 | Carbon nanotube-graphene hybrid transparent conductor and field effect transistor | US14820011 | 2015-08-06 | US09954175B2 | 2018-04-24 | Ageeth A. Bol; Bhupesh Chandra; Amal Kasry; Ahmed Maarouf; Glenn J. Martyna; George S. Tulevski |
| A nanotube-graphene hybrid nano-component and method for forming a cleaned nanotube-graphene hybrid nano-component. The nanotube-graphene hybrid nano-component includes a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor. | ||||||
| 16 | PREPARATION METHOD OF GRAPHENE | US15039655 | 2014-12-24 | US20170166449A1 | 2017-06-15 | Kwang Hyun Yoo; Kwon Nam Sohn; Won Jong Kwon; Kil Sun Lee |
| Disclosed herein is a preparation method of graphene, capable of preparing graphene having a smaller thickness and a large area, and with reduced defect generation, by a simplified process. The preparation method of graphene includes forming dispersion including a carbon-based material including unoxidized graphite, and a dispersant; and continuously passing the dispersion through a high pressure homogenizer including an inlet, an outlet, and a micro-channel for connection between the inlet and the outlet, having a diameter in a micrometer scale, wherein the carbon-based material is exfoliated, as the material is passed through the micro-channel under application of a shear force, thereby forming graphene having a thickness in nanoscale. | ||||||
| 17 | Material including graphene and an inorganic material and method of manufacturing the material | US12956964 | 2010-11-30 | US09306099B2 | 2016-04-05 | Jae-young Choi; Won-mook Choi; Duk-hyun Choi; Sang-woo Kim; Kyung-sik Shin |
| A material including: graphene; and an inorganic material having a crystal system, wherein a crystal plane of the inorganic material is oriented parallel to the (0001) plane of the graphene. The crystal plane of the inorganic material has an atomic arrangement of a hexagon, a tetragon, or a pentagon. | ||||||
| 18 | Carbon Nanotube-Graphene Hybrid Transparent Conductor and Field Effect Transistor | US14820011 | 2015-08-06 | US20150340617A1 | 2015-11-26 | Ageeth A. Bol; Bhupesh Chandra; Amal Kasry; Ahmed Maarouf; Glenn J. Martyna; George S. Tulevski |
| A nanotube-graphene hybrid nano-component and method for forming a cleaned nanotube-graphene hybrid nano-component. The nanotube-graphene hybrid nano-component includes a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor. | ||||||
| 19 | TRANSPARENT CONDUCTOR | US13882451 | 2011-11-10 | US20140193626A1 | 2014-07-10 | Barbaros Özyilmaz; Guang Xin Ni; Yi Zheng |
| A transparent conductor comprising: a graphene layer and a permanent dipole layer on the graphene layer configured to electrostatically dope the graphene layer. | ||||||
| 20 | Method of producing carbon material by bending at least one carbon atom layer of graphite | US465427 | 1995-06-05 | US5626812A | 1997-05-06 | Thomas Ebbesen; Hidefumi Hiura; Katsumi Tanigaki |
| A novel carbon material is obtained by bending at least one carbon atom layer of graphite in at least one selected region along either, or both, of lines I and II in FIG. 1. The bending can be accomplished by scanningly picking the carbon atom layer(s) with a probe of an atomic force microscope or another scanning microscope. The obtained carbon material has at least one round bend having a width of 0.1-10 nm and at least one flap region having a triangular, rectangular or still differently polygonal shape in plan view. When the carbon atom layer(s) is bent with very small radii of curvature, a finely striped ridge-and-groove structure appears in the round bend. The physical properties of the obtained carbon material are uniquely determined by the direction(s) of bending, width of each bend, shape and size of each flap region and the stripe pitch of the ridge-and-groove structure. | ||||||
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