| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 21 | 1나노초 이하의 상승시간을 갖는 고전압 초고속 펄스발생장치 | KR2020050033203 | 2005-11-24 | KR200407794Y1 | 2006-02-03 | 이홍식; 김영배; 조주현; 정순신 |
| 본 고안은 고전압 초고속 펄스 발생장치에 관한 것으로, 고전압의 펄스전압 발생부; 초고속 스위치(Ultra fast switch), 블럼라인(blumlein) 선로를 이용하여 펄스전압을 증폭하고, 상승시간을 압축하는 제1상승부; 상기 증폭, 압축된 펄스전압을 피킹갭(Peaking gap) 스위치를 이용하여 상승시간을 1나노초 이하로 압축하는 제2 상승부; 및 상기 압축된 펄스파를 외부로 방사하는 단계를 포함하는 초고속 펄스 발생장치에 관한 것이다. 이와 같이 본 고안에 따른 초고속 펄스 발생장치 제공하면, 1나노초 이하의 상승시간을 갖는 초고속 펄스를 발생하여 고성능의 영상 포착 레이더, EMI(Electromagnetic Interference)에 관련된 장치, 각종 전자 장치의 PCB(Printed Circuit Board) 기판의 오동작 원인 분석 등 다양한 용도에 활용이 가능하다. 초고속 펄스 발생장치, 싸이라트론(Thyratron), 블럼라인(Blumlein), 초고속 스위치(Ultra fast switch), 피킹갭(peaking gap) 스위치, 펄스 변압기, 상승시간 | ||||||
| 22 | 중성입자빔 처리장치 | KR1020030084946 | 2003-11-27 | KR1020050051195A | 2005-06-01 | 이봉주; 유석재; 이학주 |
| 본 발명은 중성입자빔 처리장치에 관한 것이다. 보다 구체적으로는, 본 발명은 플라즈마 방전이 발생하여 처리가스가 플라즈마로 전환되는 플라즈마 방전공간, 플라즈마 이온과 충돌하여 플라즈마 이온을 중성입자로 변환시키는 중금속판, 플라즈마 이온 및 전자의 통과는 방해하고 상기 중금속판과 상기 플라즈마 이온의 충돌에 의해 생성된 중성입자는 통과시키는 플라즈마 리미터 및 표면처리가 요하는 기판을 수납하는 처리실을 포함하는 중성입자빔 처리장치에 있어서, 상기 플라즈마 방전공간이 상기 중금속판과 상기 플라즈마 리미터 사이에 샌드위치된 것을 특징으로 하는 중성입자빔 처리장치에 관한 것이다. | ||||||
| 23 | 빔전하교환장치 | KR1019950000301 | 1995-01-10 | KR100358966B1 | 2003-01-10 | 사이또무쯔미; 야히로도모유끼; 하따께야마마사히로 |
| A beam charge exchanging apparatus for exchanging the charges of charged particles in a fast particle beam emitted from a source of the fast particle beam is disclosed. The apparatus comprises; a gas container for charge exchange placed in a vacuum atmosphere; holes provided in the container for passing the fast particle beam through the container; a source of gas; means for introducing the gas in the container as a high speed gas fluid; the fast particle beam is collided with the high speed gas fluid in the container for exchanging charges therebetween and turning the fast particle beam to a neutral particle beam. The apparatus further may include means for detecting the quantity of neutral particles resulting from the charge exchange by measuring the quantity of ionized gas generated in the high speed gas fluid as an electric current. <IMAGE> | ||||||
| 24 | 중성 입자 비임 조사 장치 | KR1019960055496 | 1996-11-14 | KR100242483B1 | 2000-03-02 | 키노시타케이조; 사무카와세이지 |
| 본 발명은 다음의 소자들을 포함하는 중성 입자 빔 처리 장치를 제공한다. 플라즈마 발생기는 고주파 전계의 인가 및 인가 정지를 교호적으로 하여 처리 가스로부터 플라즈마 발생시키기 위해 제공된다. 또한, 음이온 가속기는 플라즈마 발생기에서 발생된 플라즈마로부터 음이온을 인출하고 그것을 가속시켜 음이온 빔을 형성하도록 제공된다. 또한, 음이온 빔을 중성화하여 중성 입자 빔을 형성하도록 중성화기가 제공된다. 또한, 홀더(holder)는 중성 입자 빔이 조사되는 위치에 시료를 홀딩하도록 제공된다. | ||||||
| 25 | 非双極性電子プラズマにより異方性の単一エネルギー中性ビームを提供する方法及び機器 | JP2017145533 | 2017-07-27 | JP2017204482A | 2017-11-16 | リー チェン; メリット ファンク; ジイン チェン |
| 【課題】基板を処理する機器。 【解決手段】第1のプラズマ電位で第1のプラズマを形成する第1のプラズマチャンバと、前記第1のプラズマ電位よりも高い第2のプラズマ電位で第2のプラズマを形成する第2のプラズマチャンバと、前記第1のプラズマチャンバと前記第2のプラズマチャンバの間に設置された分離部材であって、前記第1のプラズマチャンバと前記第2のプラズマチャンバの間の電子移動を可能にする、分離部材と、前記第2プラズマチャンバに隣接し、前記分離部材から離間して配置されたホルダであって、SiO2、石英、HfO2、Y2O3、および酸化アルミニウムの1または2以上を含む中和器グリッドを有する、ホルダと、を有する、機器。 【選択図】 図13 |
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| 26 | 適応型の発射方向および/または位置を用いた原子干渉計 | JP2013023447 | 2013-02-08 | JP6072558B2 | 2017-02-01 | ロバート・コンプトン; ケネス・サリット |
| 27 | 機体構成部材の連結構造 | JP2011055999 | 2011-03-14 | JP5669635B2 | 2015-02-12 | 浩司 川原; 山越 英男; 英男 山越; 祐一郎 神納; 敦洋 彌政; 徹 橋上 |
| 28 | Atom interferometer with adaptive launch direction and/or position | JP2013023447 | 2013-02-08 | JP2013178243A | 2013-09-09 | COMPTON ROBERT; KENNETH SALIT |
| PROBLEM TO BE SOLVED: To provide a method of launching atoms so as to increase sensitivity in an atom interferometer used as an inertial sensor.SOLUTION: The method includes: determining a direction of total effective acceleration force Feef on atoms 101; adaptively controlling a direction of launch of the atoms in the atom interferometer on the basis of the direction of the total effective acceleration force so that the direction of launch is opposite or orthogonal to the direction of the total effective acceleration force; and obtaining measurement results while the atoms are within the volume of a Raman laser beam for an extended period of time. | ||||||
| 29 | Neutral particle beam formation device, surface analysis device, neutral particle beam formation method, and surface analysis method | JP2011086485 | 2011-04-08 | JP2012221746A | 2012-11-12 | NAKANISHI SHIGEMITSU; HIGASHITSUTSUMI HIDEAKI |
| PROBLEM TO BE SOLVED: To provide a neutral particle beam formation device capable of measuring the intensity of a neutral particle beam, and to provide a surface analysis device using the same, a neutral particle beam formation method, and a surface analysis method.SOLUTION: The neutral particle beam formation device comprises a neutralization chamber 3 which neutralizes an ion beam by introducing a neutral gas and converts the ion beam into a neutral particle beam, and a neutral particle beam intensity monitor mechanism which monitors the intensity of the neutral particle beam. The neutral particle beam intensity monitor mechanism is a mechanism for measuring the charges of charged particles produced when the neutral gas is charged by charge exchange reaction of the neutral gas and the ion beam. | ||||||
| 30 | Neutral particle generator | JP2011520275 | 2009-06-22 | JP2011529612A | 2011-12-08 | シュリアー、オーデッド |
| A neutral particle generator is disclosed that includes a container which holds a material in at least a partial plasma state, for example a Deuterium plasma. In one form, a first cathode is positioned within the container and produces a first beam of neutral particles directed away from the first cathode. Optionally, a second cathode is also positioned within the container and produces a second beam of neutral particles directed away from the second cathode, and/or a target is also positioned within the container. In one form, the first cathode and the second cathode are linearly opposed so that the first beam interacts/collides with the second beam resulting in fusion reactions of at least some of the neutral particles, which thereby results in generation of emitted neutrons. | ||||||
| 31 | Neutral particle beam processing apparatus and a surface treatment method | JP2006541045 | 2004-11-27 | JP4249226B2 | 2009-04-02 | イ，ハグ−ジュ; イ，ボン−ジュ; ユ，スク−ジェ |
| 32 | Radical generator | JP2007067390 | 2007-03-15 | JP2008223123A | 2008-09-25 | NAKAHARA TAKESHI; YUJI HIROYUKI; TAMURA KENTARO; AKASAKA SHUNSUKE; KAWASAKI MASASHI; OTOMO AKIRA; TSUKASAKI ATSUSHI |
| <P>PROBLEM TO BE SOLVED: To provide a radical generator which enhances the purity of emitted plasma atoms, prevents the inclusion of impurities and enhances the controllability of ion concentration. <P>SOLUTION: An outer surrounding of a discharge tube 10 is wound around by a high-frequency coil 4, and a terminal of the high-frequency coil 4 is connected to a high-frequency power source 9. The discharge tube 10 is constituted of a discharge chamber 1, a lid 2, and a bottom plate 3 for introducing gas. Also, a susceptor 8 is provided and a strut 6 is arranged on the susceptor 8. A shutter 5 is connected to the strut 6 the hatched components, i.e., the shutter 5, the lid 2, the discharge chamber 1, and the bottom plate 3 for introducing the gas are all or partly formed of a silicon-based compound, such as quartz. <P>COPYRIGHT: (C)2008,JPO&INPIT | ||||||
| 33 | Remote plasma atomic layer deposition apparatus and a method using Dc bias | JP2007524731 | 2004-08-04 | JP2008508430A | 2008-03-21 | キム，ウン−ジョン; キム，ジュ−ヨン; キム，ジン−ウー; ジョン，ヒョン−タク |
| 従来のプラズマ印加ＡＬＤ装置では、プラズマが反応室の内部で直接発生するので、基板と薄膜とに直接的な物理的な衝撃を与えて薄膜が損傷される問題がある。 また、プラズマのエネルギーを調節する機構を設けるのが容易ではないので、プラズマの不均一による薄膜の不均一が問題となる場合が多く報告されている。
本発明では、内部空間を有する反応室、反応室の内部空間の一側に配置され、薄膜形成のための基板が載置される基板支持台、反応室の外側に設置されて反応室の内部空間にリモートプラズマを供給するためのリモートプラズマ発生部、リモートプラズマのエネルギーを調節できるＤＣバイアス部、及び反応室の内部に薄膜形成のためのソースガスを供給するソースガス供給部を含むＡＬＤ装置を提供する。 |
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| 34 | Atomic beam generating method and apparatus | JP2000166768 | 2000-06-02 | JP3972972B2 | 2007-09-05 | 亮 並木; 健一 伊東; 琢也 平野; 寿夫 鳥井 |
| 35 | A method of manufacturing an electro-optical effect atomic lithography apparatus using, and atomic structure. | JP2003035356 | 2003-02-13 | JP3918055B2 | 2007-05-23 | 隆三 大向; 昌良 渡辺 |
| 36 | Method for manufacturing gas sensor element | JP2002302212 | 2002-10-16 | JP2004138451A | 2004-05-13 | IWATA ATSUSHI |
| <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a gas sensor element with less variation in responsiveness. <P>SOLUTION: A radius R of a solid electrolytic body 10 is measured at a radius measuring position A on a protective layer forming surface of the electrolytic body 10. A molten material for a protective layer is sprayed on the forming surface by using a plasma spraying device to form a protective layer 12. A radius S of the electrolytic body 10 including the protective layer 12 is measured at an intersection point B of a normal line in the measuring position A with the surface of the protective layer. With a difference between S and R regarded as the thickness of the protective layer 12, the amount of material sprayed by the spraying device for the protective layer is controlled based on the thickness, thereby forming the protective layer 12 equipped with a desired thickness. <P>COPYRIGHT: (C)2004,JPO | ||||||
| 37 | Method for generating a directed gas jets and apparatus | JP2000549956 | 1999-05-18 | JP3426214B2 | 2003-07-14 | ケットルプ アントニウス; ベースル ウルリヒ; ローワー エグモント; イェルク ヘーガー ハンス; ツィンマーマン ラルフ; ドルフナー ラルフ |
| 38 | Method for generating a directed gas jets and apparatus | JP2000549956 | 1999-05-18 | JP2002516392A | 2002-06-04 | ケットルプ アントニウス; ベースル ウルリヒ; ローワー エグモント; イェルク ヘーガー ハンス; ツィンマーマン ラルフ; ドルフナー ラルフ |
| (57)【要約】 本発明は、方向付けられたガス噴流を発生する方法及び装置に関する。 本発明の課題は、前記方法及び装置を、最大の粒子密度を発生するように構成することである。 前記課題は、ガイドされたサンプルガス噴流を発生させ、ガイドされたサンプルガス噴流から分離されて同じ方向に延びる、方向付けられかつガイドされた補助ガス噴流を発生させかつ一定の区間にわたりサンプルガス噴流と補助ガス噴流を合流させることにより、かつ供給導管を有する中央サンプルガイド部材（７）と、供給導管（６）を有しかつ前記ガイドを同心的に包囲する補助ガスガイド部材（８）とからなり、その際サンプルガスガイド部材（７）が補助ガスガイド部材（８）内で終わっており、その際補助ガスのための供給導管内にパルス弁（４）を有する装置により解決される。 | ||||||
| 39 | Device and method for processing neutral beam | JP2000113519 | 2000-04-14 | JP2001296398A | 2001-10-26 | ICHIMURA SATOSHI; TSUCHIYA KAZUTOSHI; SATO TADASHI; NAGAMINE YOSHIHIKO; HIGUCHI YOSHIYA |
| PROBLEM TO BE SOLVED: To expand the diameter and capacity of a neutral beam while reducing the divergence of the beam and lessening the inconsistency of the energy of it. SOLUTION: When an ion beam derived from a plasma generation chamber 1 is neutralized in a neutralization chamber 11 to convert the ion beam to a neutral beam and an object 17 to be treated in a treatment chamber 23 is irradiated with the neutral beam, a flat space potential is made in the neutralization chamber 11 by locating a porous electrode 32 and a permanent magnet line 31 as charged particle separating means that separate charged particles from the neutral beam, equalizing the electric potential of a permanent magnet line 31 with that of a wall 8 of the neutralization chamber 11, setting a porous electrode 22 is set at a positive potential and generating plasma in the neutralization chamber 11 through the interaction between an electron cyclotron magnetic field generated by a permanent magnet array 9 and microwaves introduced from a wave guide 12. The divergence of the neutral beam made by converting the ion beam by the flat space potential is small and the inconsistency of the energy of the neutral beam is lessened, which makes it possible to expand the diameter and capacity of the neutral beam. | ||||||
| 40 | Generating method and apparatus of the pulse excitation atom beam and pulsed ultraviolet light | JP1992298 | 1998-01-30 | JP2939540B2 | 1999-08-25 | YAMAUCHI YASUSHI; KURAHASHI MITSUNORI; KISHIMOTO NAOKI |
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