| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 101 | Atomic beam generating method and device | US09926699 | 2001-12-04 | US06495822B2 | 2002-12-17 | Takuya Hirano; Yoshio Torii; Kenichi Ito; Ryo Namiki |
| A atomic beam generating method and apparatus for producing an atomic beam that is high in flow rate is disclosed which makes vacuum equipment simpler in construction, and is high in the rate of extraction of atoms, capable of adjusting its flow rate and applicable to many different atomic species. The atomic beam generating apparatus used produces a beam of atoms by extracting the atoms from a low temperature atomic cloud formed by laser cooling. The low temperature atomic cloud is formed by irradiating the atoms with at least two sets of laser lights in a region of laser beam intersection in which they intersect, each of the sets of laser lights being made of a pair of laser beams which are opposite in direction of travel to each other, the laser beams intersecting in the region of laser beam intersection. In this region of laser beam intersection there is provided a laser beam shading zone in which one of the laser beams in each of the sets of laser lights that is traveling in a particular direction is obstructed to provide a shade therefor. The laser beam shading zone is so located in the region of laser beam intersection that in the laser beam shading zone a force is brought about that is effective to force atoms in the laser beam shading zone to move towards a preselected direction, thereby forming a beam thereof. | ||||||
| 102 | ATOMIC BEAM GENERATING METHOD AND DEVICE | US09926699 | 2001-12-04 | US20020134931A1 | 2002-09-26 | Takuya Hirano; Yoshio Torii; Kenichi Ito; Ryo Namiki |
| A atomic beam generating method and apparatus for producing an atomic beam that is high in flow rate is disclosed which makes vacuum equipment simpler in construction, and is high in the rate of extraction of atoms, capable of adjusting its flow rate and applicable to many different atomic species. The atomic beam generating apparatus used produces a beam of atoms by extracting the atoms from a low temperature atomic cloud formed by laser cooling. The low temperature atomic cloud is formed by irradiating the atoms with at least two sets of laser lights in a region of laser beam intersection in which they intersect, each of the sets of laser lights being made of a pair of laser beams which are opposite in direction of travel to each other, the laser beams intersecting in the region of laser beam intersection. In this region of laser beam intersection there is provided a laser beam shading zone in which one of the laser beams in each of the sets of laser lights that is traveling in a particular direction is obstructed to provide a shade therefor. The laser beam shading zone is so located in the region of laser beam intersection that in the laser beam shading zone a force is brought about that is effective to force atoms in the laser beam shading zone to move towards a preselected direction, thereby forming a beam thereof. | ||||||
| 103 | Continuous cold atom beam atomic system | US09217722 | 1998-12-21 | US06303928B1 | 2001-10-16 | Walter F. Buell; Bernardo Jaduszliwer |
| An improved magneto-optic trap is used to generate a high brightness low velocity continuous source of atoms as a continuous atomic beam. The improved magneto-optic atom trap is using gradient magnetic fields and a single circularly polarized laser beam incident upon a right angle conical mirror with apex aperture through which the continuous cold atom beam and central portion of the incident laser trapping light exit along a dark column. For use in an atomic clock system, a collimating and deflecting pumping laser provides transverse cooling of the atoms beam to bend and separate the cold atom beam from trapping laser light for reducing light shifts of the atomic clock operating frequency. The atomic clock can be a microwave cavity or Raman-type atomic clock. | ||||||
| 104 | Ion implantation with charge neutralization | US09083707 | 1998-05-22 | US06271529B1 | 2001-08-07 | Marvin Farley; Vadim G. Dudnikov; Mehran Nasser-Ghodsi |
| An ion implanter is provided for implanting ions in a workpiece. The ion implanter includes an apparatus for generating an ion beam and directing it toward a surface of a work piece and a plasma generator for generating plasma to neutralize the ion beam and the work piece surface. The plasma generator has a plasma generator chamber defined by walls, a relatively narrow outlet aperture for plasma produced in the chamber to leave the chamber to neutralize the beam and work piece surface, cathodes, and anodes spaced from the cathodes and from the walls of the chamber. The plasma generator also has magnets arranged within the plasma generator chamber, adjacent the chamber walls to generate a magnetic field to deflect primary electrons emitted from the cathode from directly reaching the anode. The plasma generator also features a conductive shield, positioned within the chamber between the anode and the magnets, the shield having an electric potential selected to deflect electrons, the magnetic field and the conductive shield effective during operation to cause electrons from the cathode to trace extended paths to ionize gas within the chamber to generate plasma before reaching the anode. A drift tube defined by walls through which the ion beam passes before reaching the workpiece is opened into by the aperture opens into the tube. A series of parallel, linear magnets are positioned perpendicular to the general path of the ion beam. The adjacent poles of adjacent magnets are of opposite polarity. | ||||||
| 105 | Production of nano particles and tubes by laser liquid interaction | US55835 | 1998-04-06 | US6068800A | 2000-05-30 | Jogender Singh; Eric Whitney; Paul E. Denney |
| The present invention is a process and apparatus for producing nano-scale particles using the interaction between a laser beam and a liquid precursor solution. There are two embodiments. The first embodiment includes the use of a solid substrate during the laser-liquid interaction. In this embodiment the laser beam is directed at the solid substrate which is immersed in the liquid precursor solution and rotating. The second embodiment includes the use of a plasma during the laser-liquid interaction. In the second embodiment, a mixture of a liquid precursor and a carrier gas is injected into a laser beam. Injection of the mixture can be performed either perpendicular or parallel to the laser beam. The apparatus for injecting the liquid precursor and carrier gas into the laser beam includes a plasma nozzle designed to allow the laser beam to enter the plasma nozzle so that the laser beam may irradiate what is flowing through the plasma nozzle to create a plasma flow. The carrier gas allows for the formation of a plasma by its interaction with the laser beam. The liquid precursor is allowed to atomize into fine droplets. These fine droplets are exposed to the laser beam along with the plasma. The photon energy from laser beam and plasma energy induce the breaking of the molecular bond of the liquid precursor which results in the formation of ultra-fine elemental powders. | ||||||
| 106 | Method and apparatus for cleaning contaminated surfaces using energetic cluster beams | US99511 | 1998-06-18 | US6033484A | 2000-03-07 | John F. Mahoney |
| A method for cleaning contaminated surfaces, especially semiconductor wafers, using energetic cluster beams is disclosed. In this system, charged beams consisting of microdroplets or clusters having a prescribed composition, velocity, energy and size are directed onto a target substrate dislodging contaminant material. The charged, high energy cluster beams are formed by electrostatically atomizing a conductive fluid fed pneumatically to the tip of one or more capillary-like emitters. The high extraction field necessary for atomization and formation of charged clusters, on the order 10.sup.5 volts/cm or greater, is provided by applying a potential difference between the emitters and a counterelectrode. Since the charged clusters, typically 0.01 to 0.1 micron in diameter, are multiply charged, acceleration through 10 kV or more results in large substrate impact energies greater than 0.5 million electronvolts. Because beam clusters are massive compared to ion beams, they expend their energy over an extended area of the target causing the simultaneous liftoff and removal of micron and submicron particulates, organic films and metallic contaminants. Although individual cluster impact energies are high, the energy is shared by the large number of cluster nucleons. This results in specific energies at impact less than 1 eV/nucleon, well below material sputtering thresholds, preventing direct etching or damage to impacted surfaces during the contaminant removal process. To prevent substrate charging, neutralization can be accomplished by injecting electrons into focused or nonfocused cluster beams. | ||||||
| 107 | Fast atomic beam source with an inductively coupled plasma generator | US800278 | 1997-02-13 | US5883470A | 1999-03-16 | Masahiro Hatakeyama; Katsunori Ichiki; Yasushi Toma; Masao Saitoh |
| A fast atomic beam (FAB) source is capable of generating fast atomic beams having characteristics of a high beam density, precise directionality, and a wide range of controlled out put energy levels. The FAB source includes a discharge tube, an inductively coupled plasma generator for generating gas plasma in the discharge tube from gas introduced therein, positive and negative electrodes for accelerating ions to control the beam for a variety of energy levels. The negative electrode has a beam control opening for generating a FAB, wherein directionability, neutralization factor, and other FAB characteristics are controlled. | ||||||
| 108 | Cryogenic accumulator for spin-polarized xenon-129 | US622865 | 1996-03-29 | US5809801A | 1998-09-22 | Gordon D. Cates, Jr.; Bastiaan Driehuys; William Happer; Eli Miron; Brian Saam |
| A method and apparatus for accumulation of hyperpolarized .sup.129 Xe is disclosed. The method and apparatus of the invention enable the continuous or episodic accumulation of flowing hyperpolarized .sup.129 Xe in frozen form. The method also permits the accumulation of hyperpolarized .sup.129 Xe to the substantial exclusion of other gases, thereby enabling the purification of hyperpolarized .sup.129 Xe. The invention further includes .sup.129 Xe accumulation means which is integrated with .sup.129 Xe hyper polarization means in a continuous or pulsed flow arrangement. The method and apparatus enable large scale production, storage, and usage of hyperpolarized .sup.129 Xe for numerous purposes, including imaging of human and animal subjects through magnetic resonance imaging (MRI) techniques. | ||||||
| 109 | Apparatus for cleaning contaminated surfaces using energetic cluster beams | US550302 | 1995-10-30 | US5796111A | 1998-08-18 | John F. Mahoney |
| A method and apparatus for cleaning contaminated surfaces, especially semiconductor wafers, using energetic cluster beams is disclosed. In this system, charged beams consisting of microdroplets or clusters having a prescribed composition, velocity, energy and size are directed onto a target substrate dislodging contaminant material. The charged, high energy cluster beams are formed by electrostatically atomizing a conductive fluid fed pneumatically to the tip of one or more capillary-like emitters. The high extraction field necessary for atomization and formation of charged clusters, on the order 10.sup.5 volts/cm or greater, is provided by applying a potential difference between the emitters and a counterelectrode. Since the charged clusters, typically 0.01 to 0.1 micron in diameter, are multiply charged, acceleration through 10 kV or more results in large substrate impact energies greater than 0.5 million electronvolts. Because beam clusters are massive compared to ion beams, they expend their energy over an extended area of the target causing the simultaneous liftoff and removal of micron and submicron particulates, organic films and metallic contaminants. Although individual cluster impact energies are high, the energy is shared by the large number of cluster nucleons. This results in specific energies at impact less than 1 eV/nucleon, well below material sputtering thresholds, preventing direct etching or damage to impacted surfaces during the contaminant removal process. To prevent substrate charging, neutralization can be accomplished by injecting electrons into focused or nonfocused cluster beams. | ||||||
| 110 | Method for the production of atomic ion species from plasma ion sources | US644610 | 1996-04-26 | US5789744A | 1998-08-04 | David Spence; Keith Lykke |
| A technique to enhance the yield of atomic ion species (H.sup.+, D.sup.+, O.sup.+, N.sup.+, etc.) from plasma ion sources. The technique involves the addition of catalyzing agents to the ion discharge. Effective catalysts include H.sub.2 O, D.sub.2 O, O.sub.2, and SF.sub.6, among others, with the most effective being water (H.sub.2 O) and deuterated water (D.sub.2 O). This technique has been developed at Argonne National Laboratory, where microwave generated plasmas have produced ion beams comprised of close to 100% purity protons (H.sup.+) and close to 100% purity deuterons (D.sup.+). The technique also increases the total yield of protons and deuterons by converting unwanted ion species, namely, H.sub.2.sup.+,H.sub.3.sup.+ and D.sub.2.sup.+, D.sub.3.sup.+, into the desired ion species, H.sup.+ and D.sup.+, respectively. | ||||||
| 111 | Method and apparatus for laser-controlled proton beam radiology | US634242 | 1996-04-18 | US5760395A | 1998-06-02 | Carol J. Johnstone |
| A proton beam radiology system provides cancer treatment and proton radiography. The system includes an accelerator for producing an H.sup.- beam and a laser source for generating a laser beam. A photodetachment module is located proximate the periphery of the accelerator. The photodetachment module combines the H.sup.- beam and laser beam to produce a neutral beam therefrom within a subsection of the H.sup.- beam. The photodetachment module emits the neutral beam along a trajectory defined by the laser beam. The photodetachment module includes a stripping foil which forms a proton beam from the neutral beam. The proton beam is delivered to a conveyance segment which transports the proton beam to a patient treatment station. The photodetachment module further includes a laser scanner which moves the laser beam along a path transverse to the cross-section of the H.sup.- beam in order to form the neutral beam in subsections of the H.sup.- beam. As the scanning laser moves across the H.sup.- beam, it similarly varies the trajectory of the proton beam emitted from the photodetachment module and in turn varies the target location of the proton beam upon the patient. Intensity modulation of the proton beam can also be achieved by controlling the output of the laser. | ||||||
| 112 | MeV scanning ions implanter | US804249 | 1997-02-21 | US5719403A | 1998-02-17 | Kenneth H. Purser |
| A method and apparatus for the direct current acceleration and scanning of ions of all species to energies as high as a few million electron volts (MeV). These method and apparatus have particular relevance for the controlled doping of semiconductor materials and flat panel display units. The apparatus employs high velocity neutral beams of dopant atoms to deliver atoms to the high voltage terminal where they are converted to positive ions having a low electric rigidity. This low electric rigidity makes possible a compact charge state analyzer prior to final positive ion acceleration together with compact electrostatic scanning of the ions for individual wafer implantation at MeV energies. This technology makes possible a compact implanter system. | ||||||
| 113 | Small vacuum compatible hyperthermal atom generator | US356741 | 1994-11-21 | US5654541A | 1997-08-05 | Ronald A. Outlaw; Mark R. Davidson |
| A vacuum compatible hyperthermal atom generator includes a membrane having two sides, the membrane having the capability of dissolving atoms into the membrane's bulk. A first housing is furnished in operative association with the first side of the membrane to provide for the exposure of the first side of the membrane to a gas species. A second housing is furnished in operative association with the second side of the membrane to provide a vacuum environment having a pressure of less than 1.times.10.sup.-3 Torr on the second side of the membrane. Exciting means excites atoms adsorbed on the second side of the membrane to a non-binding state so that a portion from 0% to 100% of atoms adsorbed on the second side of the membrane are released from the second side of the membrane primarily as an atom beam. | ||||||
| 114 | Velocity selected laser ablation metal atom source | US458518 | 1995-06-02 | US5567935A | 1996-10-22 | Mario E. Fajardo; Michel Macler |
| A pulsed plume of laser ablated photo-ionizable material is emitted from a target in a vacuum, and a pulsed beam of light thereafter produces ionization of two plume sections straddling a central nonionized plume portion. A mask is provided, intermediate the plume and the laser generating the ionizing pulsed beam of light, to shield the central plume portion to prevent ionization thereof. The ionized portions of the plume are swept away from the vicinity of the non-ionized plume portion by a magnetic field, and the remaining nonionized portion passes through an aperture in a retrieval mask to produce the output of the atomic source. | ||||||
| 115 | Fast atom beam source | US289662 | 1994-08-12 | US5519213A | 1996-05-21 | Masahiro Hatakeyama |
| A fast atom beam source is capable of efficiently emitting a fast atom beam with low energy and high particle flux. A plate-shaped electrode has a plurality of atom emitting holes. A pair of electrodes are disposed in series opposite the plate-shaped electrode so as to form an electric discharge part. An AC power supply impresses an AC voltage between the pair of electrodes. A DC power supply impresses a DC voltage between the plate-shaped electrode and one of the pair of electrodes that is closer to the plate-shaped electrode. A gas inlet introduces a gas to induce electric discharge in the space between the plate-shaped electrode and the pair of electrodes. | ||||||
| 116 | Method of and apparatus for generating low-energy neutral particle beam | US229780 | 1994-04-19 | US5432342A | 1995-07-11 | Tatsuya Nishimura; Hidenao Suzuki |
| In a low-energy neutral particle beam generating apparatus having a main discharge chamber, a high-density electron beam generated in an electron beam generating unit is introduced into a main discharge chamber where it is diverged by a positive voltage applied to an anode electrode and a multipolar magnetic field formed by a permanent magnet, a main discharge gas introduced into the main discharge chamber is ionized by collision with the diverged electron beam, thereby generating a uniform plasma in the main discharge chamber, low-energy ions are drawn out from the plasma and electrically neutralized by a perforated electrode having a multiplicity of holes, thereby obtaining a low-energy neutral particle beam of large diameter without the need of using a complicated, large-sized apparatus. | ||||||
| 117 | Fast atom beam source | US845202 | 1992-03-03 | US5216241A | 1993-06-01 | Masahiro Hatakeyama; Kazutoshi Nagai |
| A fast atom beam source is capable of emitting a fast atom beam with low energy efficiently and is compact. A reaction gas mixed with a halogen or a halide is introduced into a fast atom beam source casing through a plate-shaped anode, and gas ions that are produced by a plasma discharge induced at a relatively low discharge voltage are converted into a fast atom beam, which is emitted from fast atom beam emitting holes provided in a plate-shaped cathode that is disposed opposite the anode. | ||||||
| 118 | Solid stripper for a space based neutral particle beam system | US397371 | 1982-06-30 | US5177358A | 1993-01-05 | Thomas G. Roberts; Larry J. Havard, Jr.; Edward L. Wilkinson |
| A solid state stripper for stripping H.sup.- to H.sup.O is provided that includes a very thin solid state material such as polyvinylidene chloride, mica, and cellophane that is moved at a predetermined speed in front of an accelerated beam of negative ions to cause the negative ions to be stripped to form neutral ions as they pass through the solid state stripper material. | ||||||
| 119 | Method for producing a monatomic beam of ground-state atoms | US587280 | 1990-09-18 | US5102516A | 1992-04-07 | Raymond D. Rempt |
| An electron beam is directed into a first region containing gaseous molecules which capture electrons from the beam and then dissociate to produce negative ions. The ions are accelerated to the desired energy electrostatically and drawn to a second region where they are exposed to an intra-cavity laser beam which traverses their path. The laser is chosen to have a wevelength which will cause photodetachment of electrons to form neutral atoms. Simultaneously with the above, the electron beam and ions are collimated with a magnetic field. The neutral atoms are separated from any remaining ions or electrons by a repelling electrical potential provided by a repeller plate or the like. | ||||||
| 120 | High brilliance negative ion and neutral beam source | US460464 | 1990-01-03 | US5019705A | 1991-05-28 | Robert N. Compton |
| A high brilliance mass selected (Z-selected) negative ion and neutral beam source having good energy resolution. The source is based upon laser resonance ionization of atoms or molecules in a small gaseous medium followed by charge exchange through an alkali oven. The source is capable of producing microampere beams of an extremely wide variety of negative ions, and milliampere beams when operated in the pulsed mode. | ||||||
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