| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 81 | Enhancement of the performance of the micro-electro-mechanical switch | JP2004531481 | 2003-08-26 | JP2005536854A | 2005-12-02 | イヴァンシウ，ダン・エイ; ヒルバート，クロード |
| 関連回路を使用して微小電子機械式スイッチの性能を強化する方法および回路において、この方法の実施形態の１つは、閉じたスイッチの制御要素に時間的に変化する電圧を印加することを含む接触状態調節プロセスである。 別の実施形態では、スイッチの制御要素に印加する電圧プロフィールを調整して、スイッチの作動速度または信頼性を向上させることができる。 別の方法の実施形態では、性能パラメータを測定することによってスイッチの性能を評価し、スイッチの性能が改善を要すると判定される場合には、是正措置を開始する。 微小電子機械式スイッチの性能を維持する回路の実施形態は、第１、第２の信号線ノードと、これらの信号線ノードに接続され、かつスイッチの性能パラメータ値を感知する感知回路と、このスイッチの少なくとも１つの端子に動作可能に接続された制御回路とを含む。 | ||||||
| 82 | Electrostatic actuator | JP2002014759 | 2002-01-23 | JP3709847B2 | 2005-10-26 | 浩史 川合 |
| 83 | Micro electromechanical relay, and the wireless device and the measuring apparatus using the electrostatic microrelay | JP2001089900 | 2001-03-27 | JP3651404B2 | 2005-05-25 | 知範 積 |
| 84 | Input erase stabilization memory element | JP52512194 | 1994-05-06 | JP3627108B2 | 2005-03-09 | スミス，チャールズ，ゴードン |
| 85 | Contact switch and device equipped with the contact switch | JP2003373208 | 2003-10-31 | JP2004200151A | 2004-07-15 | SEKI TOMONORI; UNO YUTAKA; MASUDA TAKAHIRO |
| <P>PROBLEM TO BE SOLVED: To enable to reduce the film thickness variations at the contact point part by simple structural changes, and by reducing variations of gap amount between the contact points, stabilize actions at the time of closing of the contact points, and reduce propagation loss of a signal by improving the high frequency property. <P>SOLUTION: At a stationary substrate 1, a plurality of fixed contact points 4a, 5a and signal wires 4, 5 are arranged and installed. At a movable substrate 10 which counters the stationary substrate 1, the movable contact point 18 closed and separated from the fixed contact points 4a, 5a is installed. The film thickness of the fixed contact points 4a, 5a are made to be smaller than the film thickness of the signal wires 4, 5, and at the closing of the fixed contact points 4a, 5a and the movable point 18, the movable point 18 is made to enter into a recess part constituted of the fixed contact points 4a, 5a, and conduction of the signal wires 4, 5 is carried out linearly. <P>COPYRIGHT: (C)2004,JPO&NCIPI | ||||||
| 86 | Mems spring structure for the device | JP2007538568 | 2005-10-24 | JP5259188B2 | 2013-08-07 | ペーター、ヘー．ステーネケン; ヨーゼフ、トーマス、マルティヌス、ファン、ベーク; テオ、レイクス |
| A MEM device has a movable element (30), a pair of electrodes (e1, e2) to move the movable element, one electrode having an independently movable section (e3), resiliently coupled to the rest of the respective electrode to provide additional resistance to a pull in of the electrodes. This can enable a higher release voltage Vrel, and thus reduced risk of stiction. Also, a ratio of Vpi to Vrel can be reduced, and so a greater range of voltage is available for movement of the movable element. This enables faster switching. The area of the independently movable section is smaller than the rest of the electrode, and the spring constant of the resilient coupling is greater than that of the flexible support. Alternatively, the movable element can have a movable stamp section resiliently coupled and protruding towards the substrate to provide an additional resistance to pull in when it contacts the substrate. | ||||||
| 87 | Vibration type mems switch and a method of manufacturing the same | JP2005209426 | 2005-07-20 | JP4267600B2 | 2009-05-27 | 太 植 朴; 文 ▲チョル▼ 李; 喜 文 鄭 |
| 88 | mems element having a spring of non-linear restoring force | JP2002050305 | 2002-02-26 | JP4230706B2 | 2009-02-25 | 東河 沈 |
| 89 | Mems spring structure for the device | JP2007538568 | 2005-10-24 | JP2008517784A | 2008-05-29 | テオ、レイクス; ペーター、ヘー．ステーネケン; ヨーゼフ、トーマス、マルティヌス、ファン、ベーク |
| A MEM device has a movable element (30), a pair of electrodes (e1, e2) to move the movable element, one electrode having an independently movable section (e3), resiliently coupled to the rest of the respective electrode to provide additional resistance to a pull in of the electrodes. This can enable a higher release voltage Vrel, and thus reduced risk of stiction. Also, a ratio of Vpi to Vrel can be reduced, and so a greater range of voltage is available for movement of the movable element. This enables faster switching. The area of the independently movable section is smaller than the rest of the electrode, and the spring constant of the resilient coupling is greater than that of the flexible support. Alternatively, the movable element can have a movable stamp section resiliently coupled and protruding towards the substrate to provide an additional resistance to pull in when it contacts the substrate. | ||||||
| 90 | Electrostatic micro relay | JP33572598 | 1998-11-26 | JP3796988B2 | 2006-07-12 | 知範 積 |
| 91 | Electrostatic actuator | JP2002014759 | 2002-01-23 | JP2003219663A | 2003-07-31 | KAWAI HIROSHI |
| PROBLEM TO BE SOLVED: To enhance the performance of an actuator by displacing a movable body sequentially by means of a plurality of drive electrodes thereby setting the rigidity and displacement of the movable body at large levels. SOLUTION: A movable body 4 is coupled movably in the X-axis direction to a movable body securing part 3 through a movable side coupling beam 5. Driving electrode supporting parts 10 and 11 are coupled to a driving electrode securing part 9 through driving side coupling beams 12 and 13 such that the supporting parts 10 and 11 can approach the securing part 9 and can recede therefrom. Gap dimensions a, b and c between movable electrodes 6, 7, 8 and driving electrodes 14, 15, 16 are set to increase gradually. When the actuator 1 is actuated, the movable body 4 is displaced at a plurality of stages by electrostatic forces generated sequentially between the electrodes 6 and 14, between the electrodes 7 and 15, and between the electrodes 8 and 16. Consequently, operation of the movable body 4 can be stabilized by imparting high rigidity (resonance frequency) thereto and displacement thereof can be set at a high level. COPYRIGHT: (C)2003,JPO | ||||||
| 92 | Mems element having spring with nonlinear restoring force | JP2002050305 | 2002-02-26 | JP2002326197A | 2002-11-12 | SHIM DONG-HA |
| PROBLEM TO BE SOLVED: To provide an MEMS element having a spring with nonlinear restoring force. SOLUTION: This MEMS element having a spring with nonlinear restoring force is provided with a substrate, a supporting element formed on the substrate, a kinetic element positioned at an upper part of the substrate by the supporting element and moving on the substrate, a spring element elastically suspending the kinetic element to the supporting body, a driving element inducing relative movement of the kinetic element to the substrate, and a reaction force changing element nonlinearly increasing repulsion force of the spring element when the kinetic element is moved by the driving element and the spring element supporting the kinetic element is elastically deformed by a specified amount. Therefore, a range of position control can be expanded when conducting position control by using the spring element having the nonlinearly repulsion force. Large restoring force can be obtained by the spring having the nonlinearly repulsion force when stiction of the kinetic element is generated, thereby preventing stiction generated in a process. COPYRIGHT: (C)2003,JPO | ||||||
| 93 | Microswitch and manufacturing method therefor | JP2000265285 | 2000-09-01 | JP2002075156A | 2002-03-15 | SUZUKI KENICHIRO |
| PROBLEM TO BE SOLVED: To realize high impedance and low-voltage drive, when a switch is off. SOLUTION: An upper electrode 4, a lower electrode 6, a contact electrode 7 and a signal wire 8 are disposed, in such a manner that a shortest distance between the contact electrode 7 and the signal wire 8 in a switch-off state is made longer than the shortest distance between the electrodes 4 and 6. COPYRIGHT: (C)2002,JPO | ||||||
| 94 | Method and device for controlling micro machine element | JP2001115921 | 2001-04-13 | JP2002036197A | 2002-02-05 | RYHAENEN TAPANI; ERMOLOV VLADIMIR |
| PROBLEM TO BE SOLVED: To realize a method and a device for controlling a micro machine element capable of using the voltage of low level with an actual method. SOLUTION: In the method for controlling at least one micro machine element, a first control signal and a second control signal are supplied to the micro machine element, the second control signal sets the micro machine element in an active condition, and the first control signal keeps the active condition. This device for controlling at least one micro machine element 402, includes a means for producing at least the first control signal and the second control signal, a means for raising the voltage level of at least the second control signal, and a means for supplying the first control signal and the second control signal having the raised voltage level to the micro machine element. | ||||||
| 95 | Input erase stabilization memory element | JP52512194 | 1994-05-06 | JPH08510350A | 1996-10-29 | スミス，チャールズ，ゴードン |
| (57)【要約】 入力消去安定化メモリ要素（１）はベース接触子（３）と橋絡接触子（８）とを備え、両者共導電性材料から作られる。 橋絡接触子（８）は、１つはベース接触子（３）と接触し、他の１つはベース接触子（３）から隔離されている２つの安定位置を有するような寸法取りをなされている。 偏倚手段（４，５）は１つの安定位置から他の安定位置へと橋絡接触子（８）を偏倚させる。 | ||||||
| 96 | Electrostatic micro-relay, radio device and measuring device using the electrostatic micro-relay, and contact switching method | EP02252164.5 | 2002-03-26 | EP1246216B1 | 2014-06-04 | Seki, Tomonori |
| 97 | MEMS switch and method of fabricating the same | EP05025063.8 | 2005-11-16 | EP1672662B1 | 2008-06-25 | Kim, Che-heung; Shin, Hyung-jae; Kweon, Soon-cheol; Kim, Kyu-sik; Lee, Sang-hun |
| 98 | MEMS switch and method of fabricating the same | EP05025063.8 | 2005-11-16 | EP1672662A1 | 2006-06-21 | Kim, Che-heung; Shin, Hyung-jae; Kweon, Soon-cheol; Kim, Kyu-sik; Lee, Sang-hun |
A micro electro mechanical system switch and a method of fabricating the same. The micro electro mechanical system switch includes a substrate a plurality of signal lines formed at sides an upper surface of the substrate and including switching contact points and a plurality of immovable electrodes on the upper surface of the substrate and between the plurality of signal lines. An inner actuating member performs a seesaw based on a center of the substrate and together with an outer actuating member. Pushing rods are formed at ends of an upper surface of the inner actuating member with ends protruding from and overlapping with an upper portion of the outer actuating member. Contacting members are formed on a lower surface of the outer actuating member so as to be pushed by the pushing rods and contacting the switching contact points of the signal lines.
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| 99 | MICRO-COMMUTATEUR ELECTROSTATIQUE POUR COMPOSANT A FAIBLE TENSION D’ACTIONNEMENT | EP03786074.9 | 2003-11-27 | EP1565922A1 | 2005-08-24 | ROBERT, Philippe |
| The invention relates to an electrostatic microswitch which is intended to connect two strip conductors (4, 5) which are disposed on a support. According to the invention, the two strip conductors are connected by means of a contact pad (6) which is provided on deformable means (3) which are made from an insulating material and which can be deformed in relation to the support under the effect of an electrostatic force generated by control electrodes. The aforementioned contact pad connects the ends (14, 15) of the two strip conductors (4, 5) when the deformable means are sufficiently deformed. Moreover, the control electrodes are distributed over the deformable means and the support in two electrode assemblies, namely: (i) a first assembly of electrodes (101, 102, 33, 53) which is intended to generate a first electrostatic force in order to initiate the deformation of the deformable means, and (ii) a second assembly of electrodes (101, 102, 7, 8) which is intended to generate a second electrostatic force in order to continue the deformation of the deformable means (3), such that the contact pad (6) connects the ends (14, 15) of the two strip conductors. | ||||||
| 100 | MICRO-ELECTROMECHANICAL SWITCH PERFORMANCE ENHANCEMENT | EP03791790.3 | 2003-08-26 | EP1537590A2 | 2005-06-08 | IVANCIW, Dan, A.; HILBERT, Claude |
| In methods and circuits for using associated circuitry to enhance performance of a micro-electromechanical switch, one of the method embodiments is a contact conditioning process including applying a time-varying voltage to the control element of a closed switch. In another embodiment, a voltage profile applied to the control element of the switch can be tailored to improve the actuation speed or reliability of the switch. In another method embodiment, the performance of a switch may be evaluated by measuring a performance parameter, and corrective action initiated if the switch performance is determined to need improvement. An embodiment of a circuit for maintaining performance of a micro-electromechanical switch includes first and second signal line nodes, sensing circuitry coupled to the signal line nodes and adapted to sense a performance parameter value of the switch, and control circuitry operably coupled to at least one terminal of the switch. | ||||||
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