| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 61 | カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法 | JP2020116533 | 2020-07-06 | JP2021011479A | 2021-02-04 | 安立 由香子; 荒木 香; 市川 幸司 |
| 【課題】良好なラインエッジラフネス(LER)を有するレジストパターンを製造することができるカルボン酸塩及び該カルボン酸塩を含むレジスト組成物を提供することを目的とする。 【解決手段】式(I)で表されるカルボン酸塩、カルボン酸発生剤及びレジスト組成物。 [式中、R1はアルキル基を表す。R2は、ハロゲン原子又はフッ化アルキル基を表す。R3及びR4はそれぞれ、ハロゲン原子、炭素数1〜6のフッ化アルキル基又は炭素数1〜12のアルキル基を表す。m3は、0〜3のいずれかの整数を表し、m4は、0〜5のいずれかの整数を表す。X0は、置換基を有してもよい炭化水素基を表し、該炭化水素基に含まれる−CH2−は、−O−、−S−、−CO−又は−SO2−に置き換わっていてもよい。] 【選択図】なし |
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| 62 | ヨウ素含有光酸発生剤及びそれを含む組成物 | JP2020120796 | 2020-07-14 | JP2020186240A | 2020-11-19 | イマッド・アカッド; ジェームス・ダブリュ・サッカレー |
| 【課題】光酸発生剤及びコポリマーを含むフォトレジスト組成物の提供。 【解決手段】式(I)を有する光酸発生剤化合物。 「I」はヨウ素を表し、Vは、OR1またはC(=O)OR1であり、式中、R1は、独立して、H、または任意選択でO、S、N、P、及びFから選択される1〜5個のヘテロ原子を含み、かつ任意選択で、酸開裂基、重合性基、またはこれらの組み合わせを含む置換または非置換C1−30ヒドロカルビル基。 【選択図】図1 |
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| 63 | 感活性光線性または感放射線性樹脂組成物、感活性光線性または感放射線性膜及びパターン形成方法 | JP2012284642 | 2012-12-27 | JP6007100B2 | 2016-10-12 | 川端 健志; 滝沢 裕雄; 渋谷 明規; 後藤 研由; 小島 雅史; 加藤 啓太 |
| 64 | ペンタフルオロフェニル化に有用なヨードニウム化合物とその製造法，及びα−ペンタフルオロフェニルケトン誘導体とその製造法 | JP2013101853 | 2013-05-14 | JP2014221742A | 2014-11-27 | SHIBATA TETSUO; MATSUZAKI KOHEI; TOKUNAGA ETSUKO |
| 【課題】ペンタフルオロフェニル化に有用なヨードニウム化合物とその製造法の開発,及び開発したヨードニウム化合物を用いるα−ペンタフルオロフェニルケトン誘導体の製造法の開発【解決手段】発明者らはペンタフルオロフェニル基を有するヨードニウム化合物を合成し,ペンタフルオロフェニル化に有用なヨードニウム化合物を開発した。また鍵反応として,開発したヨードニウム化合物を用いた,&bgr;−ケトエステルに対する直接的ペンタフルオロフェニル化を行うことで,α−ペンタフルオロ−&bgr;−ケトエステルの合成に成功した。【選択図】なし | ||||||
| 65 | Iodonium-based photopolymerization initiator, photocurable compositions containing the methods and the same manufacturing the | JP2011518428 | 2010-05-28 | JP5607044B2 | 2014-10-15 | 高史 吉田; 啓輔 大田; 浩之 佐々木 |
| 66 | Resist composition and method for producing resist pattern | JP2013266458 | 2013-12-25 | JP2014167611A | 2014-09-11 | YOSHIDA ISAO; ADACHI YUKAKO; ICHIKAWA KOJI |
| PROBLEM TO BE SOLVED: To provide a resist composition from which a negative resist pattern having excellent pattern collapse margin (PCM) can be produced.SOLUTION: The resist composition comprises an acid generator expressed by formula (B1), an acid generator expressed by formula (B2), and a resin having an acid-labile group. In the formulae, Qand Qrepresent a fluorine atom or a perfluoroalkyl group having 1 to 6 carbon atoms; n represents an integer of 1 to 4; Lrepresents a single bond or a divalent aliphatic hydrocarbon group having 1 to 17 carbon atoms which may have a substituent; Yrepresents an alkyl group having 1 to 18 carbon atoms which may have a substituent or an alicyclic hydrocarbon group having 3 to 18 carbon atoms which may have a substituent; Zrepresents an organic cation; and Rrepresents a hydrocarbon group having 1 to 36 carbon atoms which may have a substituent. | ||||||
| 67 | Flame-retardant processing agent for fiber, method of producing flame-retardant fiber and flame-retardant fiber | JP2013023084 | 2013-02-08 | JP2014152415A | 2014-08-25 | SHIMIZU YOSHIHIKO; TERA HIDEMI; KANFUJI YOSHIHIRO |
| PROBLEM TO BE SOLVED: To provide a flame-retardant processing agent for fibers which can impart good flame retardancy and color fastness to a fiber material and reduce contamination of a fiber material and can body contamination, a method of producing a flame-retardant fiber using the flame-retardant processing agent and a flame-retardant fiber.SOLUTION: A flame-retardant processing agent for fibers comprises (A) tricresyl phosphates based on tri-p-cresyl phosphate, (B) an organic bromine compound of a bromine content of 50 wt.% or higher and a melting point of 80°C or higher, a surfactant and water, in a wt. ratio of tri-p-cresyl phosphate in the whole of (A) tricresyl phosphates is 90 wt.% or higher. | ||||||
| 68 | The resist material and patterning process using novel sulfonates and derivatives thereof, photoacid generator and this | JP2006244262 | 2006-09-08 | JP4905667B2 | 2012-03-28 | 正樹 大橋; 洋一 大澤; 克浩 小林; 武 渡辺; 剛 金生 |
| 69 | duv based on the par acceptor-substituted aromatic anion, muv and optical lithography for ionic organic light acid-generating agent | JP2010541045 | 2008-12-17 | JP2011510109A | 2011-03-31 | グロッデ、マーティン; ポポバ、アイリーン; リュー、セン |
| A photoacid generator compound P+A-, comprises an antenna group P+ comprising a cation that generates protons upon interaction with light, and A- comprising a weakly coordinating peracceptor-substituted aromatic anion that does not contain fluorine or semi-metallic elements such as boron. In one embodiment, such anions comprise the following compounds 4, 5, 6 and 7, wherein E comprises an electron-withdrawing group and the removal of one proton generates aromaticity. P+ comprises an onium cation that decomposes into a proton and other components upon interaction with photons. P+ may comprise an organic chalcogen onium cation or a halonium cation, wherein the chalcogen onium cation in another embodiment may comprises an oxonium, sulfonium, selenium, tellurium, or onium cation, and the halonium cation may comprise an iodonium, chlorine or bromine onium cation. A novel compound comprises TPS CN5. A photolithographic formulation comprises the photoacid generator in combination with a photolithographic composition such as a photolithographic polymer. The formulation, when on a substrate, is exposed to optical lithographic radiation or ArF (193 nm) or KrF (248 nm) radiation, and developed. A product comprises an article of manufacture made by the method of the invention. | ||||||
| 70 | Radiation-sensitive resin composition | JP2010107156 | 2010-05-07 | JP2010282189A | 2010-12-16 | SHIMOKAWA TSUTOMU; EHATA TAKUMA |
| <P>PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition that has small LWR (Line Width Roughness) and MEEF (Mask Error Enhancement Factor), has an excellent crude/dense bias, and has high storage stability. <P>SOLUTION: The radiation-sensitive resin composition includes a resin (A), a radiation-sensitive acid generator (B), an acid diffusion controller (C), and a solvent (D). The acid generator (B) is expressed by general formula (I). The solvent (D) includes about 50-90 mass% of propylene glycol monomethyl ether acetate to the total solvent. In the general formula (I), M+ represents a sulfonium cation or an iodonium cation. <P>COPYRIGHT: (C)2011,JPO&INPIT | ||||||
| 71 | Production method of iodinating agent | JP2007061067 | 2007-03-09 | JP2008223065A | 2008-09-25 | YOSHIDA JUNICHI; SUGA SEIJI; KATAOKA KAZUHIDE; MIDORIKAWA KOJI; HAGIWARA YUJI |
| <P>PROBLEM TO BE SOLVED: To provide the production method of an iodinating agent, by which iodine cation suitably used as the iodinating agent not necessitating skilled separation operation after completion of iodination reaction can be produced, and to provide an electrolyte solution used in the same. <P>SOLUTION: The production method of the iodinating agent comprises electrolyzing iodine molecules in a solution using an acid as a supporting electrolyte. <P>COPYRIGHT: (C)2008,JPO&INPIT | ||||||
| 72 | Process for producing an aromatic compound | JP24190597 | 1997-08-22 | JP4028624B2 | 2007-12-26 | ヘザー・リンネット・レイリー; ランドル・ウェイン・ステファンズ |
| 73 | Novel sulfonic acid salt, derivative thereof, photo acid-generating agent, and resist material and pattern formation method using the same | JP2006244262 | 2006-09-08 | JP2007145804A | 2007-06-14 | KOBAYASHI KATSUHIRO; OSAWA YOICHI; KANOU TAKESHI; WATANABE TAKESHI; OHASHI MASAKI |
| <P>PROBLEM TO BE SOLVED: To provide a sulfonic acid salt and a derivative thereof suitable as a photo acid-generating agent for resist materials that exhibit excellent resolution and give excellent pattern profile shapes particularly on ArF exposure, and a resist material and a pattern formation method using the same. <P>SOLUTION: The sulfonic acid salt is represented by general formula (1a): CF<SB>3</SB>-CH(OH)-CF<SB>2</SB>SO<SB>3</SB><SP>-</SP>M<SP>+</SP>. In the formula, M<SP>+</SP>is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. The sulfonic acid salt can moderately control an acid diffusion length by a hydrogen bond or the like as it has a polar hydroxy group in the molecule. The photo acid-generating agent generating the sulfonic acid can be used in coating, prebaking, exposure, post-baking and developing steps in a device production process without causing a problem. Moreover, the sulfonic acid salt is hardly influenced by water remaining on a wafer on ArF immersion exposure thereby suppressing formation of defects. <P>COPYRIGHT: (C)2007,JPO&INPIT | ||||||
| 74 | New sulfonic acid salt and derivative thereof, photoacid-generating agent and resist material using the same, and pattern-forming method | JP2006093303 | 2006-03-30 | JP2007145797A | 2007-06-14 | OSAWA YOICHI; WATANABE TAKESHI; KANOU TAKESHI; KOBAYASHI KATSUHIRO |
| <P>PROBLEM TO BE SOLVED: To provide a sulfonic acid salt and a derivative thereof, capable of preventing the elution into water at exposure while being soaked in ArF solution, and suitable as a raw material for an photoacid-generating agent of a resist material or the photoacid-generating agent because of effective usability or the like for the exposure while being soaked in the liquid; and to provide the photoacid-generating agent and a resist material using the agent, and a pattern-forming method. <P>SOLUTION: The sulfonic acid salt is represented by formula (1): CF<SB>3</SB>-CH(OCOR)-CF<SB>2</SB>SO<SB>3</SB><SP>-</SP>M<SP>+</SP>(wherein, R is a substituted or nonsubstituted 1-20C linear, branched or cyclic alkyl group or a substituted or nonsubstituted 6-14C aryl group; M<SP>+</SP>is a lithium ion, a sodium ion, a potassium ion, an ammonium ion or a tetramethylammonium ion). The sulfonic acid allows an acyl group from slightly bulky to highly bulky, a benzoyl group, a naphthoyl group, an anthroyl group or the like to be easily introduced, to enable a large width of molecular design to be adopted because the sulfonic acid has an ester site in the molecule. <P>COPYRIGHT: (C)2007,JPO&INPIT | ||||||
| 75 | Fluorinated condensed aromatic compound and use thereof in liquid crystal mixture | JP2005128125 | 2005-04-26 | JP2005325110A | 2005-11-24 | SCHMIDT WOLFGANG; WINGEN RAINER; HORNUNG BARBARA |
| <P>PROBLEM TO BE SOLVED: To provide a fluorinated condensed aromatic compound suitable for a liquid crystal mixture; and to provide the liquid crystal mixture thereof. <P>SOLUTION: The compound is represented by formula (I). The liquid crystal mixture is obtained by using the compound of formula (I). The liquid crystal mixture contains one or more kinds of the compounds of formula (I). The liquid crystal display includes the liquid crystal mixture. <P>COPYRIGHT: (C)2006,JPO&NCIPI | ||||||
| 76 | Halogenated organic compounds decomposition processing system | JP2001282679 | 2001-09-18 | JP2003088746A | 2003-03-25 | YAMAMOTO TAKASHI; TAGASHIRA KENJI; IKEDA NOBUYUKI |
| PROBLEM TO BE SOLVED: To provide a halogenated organic compound decomposition treatment system which can be quickly feed-back-controlled. SOLUTION: In a PCB decomposition treatment system equipped with a hydrothermal oxidative decomposition apparatus 120 for making PCB harmless by dehalogenation and oxidative decomposition in the presence of sodium carbonate in a heated and pressurized primary reactor 122, a control unit 100 is installed. The control unit 100 is equipped with a plurality of differential pressure sensors 101 for measuring the pressure difference in the vertical direction in the primary reactor 122; a computing unit 102 for computing the liquid density in the primary reactor 122, basing upon the measurement results with the differential pressure sensors 101; and a regulator 103 for regulating the amount of NaOH supplied into the primary reactor 122 so that a specified value is obtained by computing with the computing unit 102. | ||||||
| 77 | Organic salt compound | JP2000328447 | 2000-10-27 | JP2002138060A | 2002-05-14 | IIDA TOSHIYA; ASAKO YOSHINOBU |
| PROBLEM TO BE SOLVED: To obtain an organic salt compound preferably used for a photooxidation generating agent and a photooxidation generating catalyst in UV and EB hardening technological fields such as painting, adhesive, bond, coating agent, chemical accelerator type photoresist, phoroscope and photomolding. SOLUTION: This organic salt compound is an organic salt comprising X+Y-, and the Y- is expressed by the formula: R1SO3- {wherein, R1 represents an aryl group substituted with an electron absorptive group} and X+ is expressed by the formula: [(R2)2I]+ {wherein, R2 is a hydrocarbon group and the two R2 groups may be the same or different from each other.}. COPYRIGHT: (C)2002,JPO | ||||||
| 78 | Method of manufacturing iodized aromatic compound | JP2000285738 | 2000-09-20 | JP2002097160A | 2002-04-02 | KITAGAWA HIDEO; ATSUMI KUNIO; MUKOYAMA MITSUAKI |
| PROBLEM TO BE SOLVED: To provide a manufacturing method capable of obtaining an iodized aromatic compound in high yield. SOLUTION: This method manufactures an iodized aromatic compound by treating an aromatic compound with iodine chloride in the presence of a compound expressed by general formula (I). [R1 to R4 are each independently H, a halogen atom, an alkyl group or an aryl group, M is Li, Na, K or Cs or a group expressed by general formula (II) [R5 to R7 are each independently H, a halogen atom, an alkyl group, an aryl group.], titanium trichloride, silver or a (substituted) ferrocene]. COPYRIGHT: (C)2002,JPO | ||||||
| 79 | Production of aromatic compound | JP24190597 | 1997-08-22 | JPH10251204A | 1998-09-22 | RAYLE HEATHER LYNNETTE; STEPHENS RANDELL WAYNE |
| PROBLEM TO BE SOLVED: To carry out control of halogenation and selectively obtain a halogenated aromatic compound by using a directional group. SOLUTION: A reaction mixture solution containing (A) at least one aryl or heteroaryl compound having Z-directional group [CO2 R<1> , CONR<2> R<3> , COR<4> or cyano (R<1> to R<3> are each H or a 1-6C alkyl; R<4> is H or a substituted 1-6C alkyl)] and one or two halo groups, (B) a copper-containing a dehalogenating agent [e.g. copper (I) oxide] in an amount of about 0.01-5.0mol equivalent based on a halogen group removed and (C) an acid (e.g. 1-10C carboxylic acid) in an amount of at least 1.0mol equivalent based on the halo group removed is heated at 95-220 deg.C to provide the objective aryl or heteroaryl compound capable of selectively removing a halogen atom from a halogenated aryl or a heteroaryl compound. | ||||||
| 80 | Cyclopropyl alkyl or - alkenyl compound, its use in these methods of preparation, and the liquid crystal mixture in | JP12396090 | 1990-05-14 | JP2753113B2 | 1998-05-18 | ARUMIIN DE MAIIERE; HANSUURORUFU DEYUUBARU; KURAUSU ETSUSHAA; HARADA TAKAMASA; UORUFUGANGU HEMAARINKU; GEEAHARUTO IRIAN; INGURITSUTO MYUURAA; MURAKAMI MIKIO; DEIITAA OORENDORUFU; RAINAA UINGEN |
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