专利汇可以提供A QUANTUM WELL DEVICE专利检索,专利查询,专利分析的服务。并且A quantum well device has an active region adapted in use to pass a tunnelling current of charge carriers. The active region comprising layers of material forming alternating potential barriers and potential wells. The active region has a first potential well at one end, having regard to the direction of flow of the tunnelling current of charge carriers, which defines a first energy level, and a further structure which defines second and third energy levels. The relative heights and thicknesses of the potential barriers when the device is in use are structured so that the first energy level has a longer lifetime than the second and third energy levels and there is coupling between the three energy levels. The degree of coupling is strongest between the second and third energy levels. The transmission coefficient through the active region shows a resonance peak at each of the energies of the three energy levels, the transmission peak at the energy of the first energy level being greater than the transmission peaks at the energies of the second and third quasi-defined energy levels respectively. The structure is such that when the device is in use the energy of the first energy level lies between the energies of the second and third energy levels but is greater or less than the average of the energies of the second and third energy levels.,下面是A QUANTUM WELL DEVICE专利的具体信息内容。
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