| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 21 | Ion sputter textured graphite | US264378 | 1981-05-15 | US4349424A | 1982-09-14 | James S. Sovey; Ralph Forman; Arthur N. Curren; Edwin G. Wintucky |
| A specially textured surface of pyrolytic graphite exhibits extremely low yields of secondary electrons and reduced numbers of reflected primary electrons after impingement of high energy primary electrons.An ion flux having an energy between 500 eV and 1000 eV and a current density between 1.0 mA/cm.sup.2 and 6.0 mA/cm.sup.2 produces surface roughening or texturing which is in the form of needles or spines.Such textured surfaces are especially useful as anode collector plates in high efficiency electron tube devices. | ||||||
| 22 | Method for improving adhesion between conductive layers and dielectrics | US3704166D | 1969-06-30 | US3704166A | 1972-11-28 | CUOMO JEROME J; MAYADAS ASHOK F; ROSENBERG ROBERT |
| A METHOD FOR IMPROVING ADHESION BETWEEN A CONDUCTIVE LAYER AND A SUBSTRATE OF INSULATING MATERIAL IS TAUGHT WHICH INCLUDES THE STEPS OF PROVIDING A SUBSTRATE OF INSULATING MATERIAL SUCH AS SILICON DIOXIDE WHICH CONTAINS A FIRST CATION AND A FIRST ANION. A SECOND CATION SUCH AS ALUMINUM IS INTRODUCED INTO THE SUBSTRATE SUBSTITUTIONALLY BY DIFFUSION OR ION BOMBARDMENT. FINALLY, A LAYER OF CONDUCTIVE MATERIAL IS DEPOSITED ON THE SURFACE OF THE SUBSTRATE BY VACUUM EVAPORATION OF SPUTTERING. THE CONDUCTIVE MATERIAL INCLUDES A THIRD CTION SUCH AS TUNGSTEN WHICH HAS AN AFFINITY FOR THE FIRST ANION. THE INTRODUCTION OF THE SECOND CATION TO CARRIED OUT IN ONLY THE SURFACE LAYERS OF THE SUBSTRATE SUCH THAT DIELECTRIC CHARACTERISTICS OF THE SUBSTRATE ARE SUBSTANTIALLY UNAFFECTED. THE INVENTION BASICALLY TEACHES PROVIDING SITES, IN A INSULATING SUBSTRATE, CONTAINING UNBOUND ATOMS WHICH ARE CAPABLE OF CHEMICALLY BONDING WITH THE DEPOSITED CONDUCTIVE MATERIAL THEREBY OBTAINING IMPROVED ADHESION AT LOW TEMPERATURE (E.G. AT TEMPERATURES OF
500*C. AND BELOW FOR W OR MO, WHEREAS WITHOUT THE SITES PROVIDED, POOR ADHESION WOULD TAKE PLACE BELOW 500*C.). |
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| 23 | ULTRA-HIGH DIELECTRIC CONSTANT GARNET | US15715443 | 2017-09-26 | US20180118627A1 | 2018-05-03 | David Bowie Cruickshank; Michael David Hill |
| Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas. | ||||||
| 24 | Ultra-high dielectric constant garnet | US15181786 | 2016-06-14 | US09771304B2 | 2017-09-26 | David Bowie Cruickshank; Michael David Hill |
| Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas. | ||||||
| 25 | Shellac-coated particles of active ingredients with controlled release properties at high pH-values, process for their manufacture and use thereof | US14361849 | 2012-11-22 | US09416050B2 | 2016-08-16 | Wolfgang Seidl; Dawid Marczewski; Sascha Raspl; Steffen Wache; Michael Schinabeck; Stefan Friedrich |
| Suggested is a novel coated particle of active ingredients with controlled release properties at pH-values from 10 to 14, wherein the active ingredient is selected from one or more construction chemical additives for the control of inorganic binders, characterized in that the coating comprises shellac, a process for its manufacture and the use thereof as an additive for mortars, dry mortars, cement slurries and/or concretes. | ||||||
| 26 | SHELLAC-COATED PARTICLES OF ACTIVE INGREDIENTS WITH CONTROLLED RELEASE PROPERTIES AT HIGH PH-VALUES, PROCESS FOR THEIR MANUFACTURE AND USE THEREOF | US14361849 | 2012-11-22 | US20140299024A1 | 2014-10-09 | Wolfgang Seidl; Dawid Marczewski; Sascha Raspl; Steffen Wache; Michael Schinabeck; Stefan Friedrich |
| Suggested is a novel coated particle of active ingredients with controlled release properties at pH-values from 10 to 14, wherein the active ingredient is selected from one or more construction chemical additives for the control of inorganic binders, characterized in that the coating comprises shellac, a process for its manufacture and the use thereof as an additive for mortars, dry mortars, cement slurries and/or concretes. | ||||||
| 27 | Ceramic in replacement components | US10288312 | 2002-11-06 | US07252684B2 | 2007-08-07 | Geoffrey Dearnaley |
| A method and apparatus for a prosthesis. At least a portion of the prosthesis is made from a ceramic that is treated with ion implantation, which causes a controllable, bilateral compressive stress of the ceramic. A diamond-like-coating (DLC) can be coated on the ceramic and in the same chamber as the ion implantation. After treating by ion implantation and coating with DLC, the ceramic will be strengthened and have a low coefficient of friction and thereby be made much less likely to fracture under load. | ||||||
| 28 | Mechanism to mold glass lenses using an implanted precision glass molding tool | US11048558 | 2005-02-01 | US20050126226A1 | 2005-06-16 | Mary Winters; Carlos Alonzo; Paul McLaughlin; John Pulver; Anna Hrycin; Donald Stephenson |
| A method for fabricating a molding tool for mold glass optical elements therewith is taught. The method comprises the steps of figuring the molding tool to have a predetermined mold surface; applying an attenuating coating to the predetermined mold surface; implanting metal ions through the attenuating coating and into the predetermined mold surface; and removing the attenuating coating leaving the predetermined mold surface with metal ions implanted therein. The method of fabrication allows for the molding tool made therewith to be used for molding optical elements from eco-glasses such as titania at high temperatures without generating adverse surface chemistry effects in the molded element. | ||||||
| 29 | Ceramic in replacement components | US10288312 | 2002-11-06 | US20040088052A1 | 2004-05-06 | Geoffrey Dearnaley |
| A method and apparatus for a prosthesis. At least a portion of the prosthesis is made from a ceramic that is treated with ion implantation, which causes a controllable, bilateral compressive stress of the ceramic. A diamond-like-coating (DLC) can be coated on the ceramic and in the same chamber as the ion implantation. After treating by ion implantation and coating with DLC, the ceramic will be strengthened and have a low coefficient of friction and thereby be made much less likely to fracture under load. | ||||||
| 30 | Mechanism to mold glass lenses using an implanted precision glass molding tool | US10230908 | 2002-08-29 | US20040050108A1 | 2004-03-18 | Mary K. Winters; Carlos F. Alonzo; Paul O. McLaughlin; John C. Pulver; Anna L. Hrycin; Donald A. Stephenson |
| A method for fabricating a molding tool for mold glass optical elements therewith is taught. The method comprises the steps of figuring the molding tool to have a predetermined mold surface; applying an attenuating coating to the predetermined mold surface; implanting metal ions through the attenuating coating and into the predetermined mold surface; and removing the attenuating coating leaving the predetermined mold surface with metal ions implanted therein. The method of fabrication allows for the molding tool made therewith to be used for molding optical elements from eco-glasses such as titania at high temperatures without generating adverse surface chemistry effects in the molded element | ||||||
| 31 | Solid oxide electrolyte with ion conductivity enhancement by dislocation | US10449709 | 2003-05-29 | US20040038106A1 | 2004-02-26 | Yuji Saito; Friedrich B. Prinz; Yong-il Park; Ryan O'Hayre |
| Dislocations are fabricated into electrolyte membrane films to increase ion conductivity. Ion and/or electron irradiation causes the growth of vacancy clusters within the thin film and collapsing into Frank dislocation loops that exhibit high ion conductivity. Maximum ion conductivity is accomplished by spatially reorienting the Frank dislocation loops during a following heat-treatment of the membrane. Thereby the dislocation loops form surface-to-surface continuous dislocations along which ions may propagate between membrane surfaces with minimal activation energies. Dislocation densities in the range of 108null1014 cm/cm3 may be fabricated with conventional irradiation techniques into ceramics such as, for example yttria stabilized zirconia and doped ceria. | ||||||
| 32 | Implanatation process for improving ceramic resistance to corrosion | US09258038 | 1999-02-25 | US06432256B1 | 2002-08-13 | Sébastien Raoux |
| A method for improving the corrosion resistance of ceramic parts in a substrate processing chamber by implanting the parts with rare-earth ions. The implanted ceramic parts are highly resistant to corrosive environments that can be formed in semiconductor manufacturing equipment including those found in high temperature applications and high density plasma applications. In a preferred embodiment of the method of the present invention, the ceramic parts are implanted with rare-earth ions using an implantation technique based on a metal vapor vacuum arc (MEVVA™) ion source. The implanted ions are then reacted with fluorine radicals in a highly corrosive environment to form a layer of rare-earth fluoride material, RE:F3, at the surface of the ceramic component. The sublimation temperature of such a RE:F3 layer is much higher than that of layers such as AlF3 that are formed on standard ceramic chamber components in such environments (e.g., up to 1100° C. as compared to 600° C.). At substrate processing temperatures less than the sublimation temperature, the formed RE:F3 layer acts as a passivation layer preventing consumption of the ceramic part during further substrate processing. A substrate processing chamber including at least one component implanted with rare-earth ions is provided. In various specific embodiments, the rare-earth-ion-implanted ceramic component is one or more of a chamber liner, a chamber dome, a cover plate, a gas manifold or faceplate and/or a substrate holder, such as a high temperature heater or an electrostatic chuck. | ||||||
| 33 | Method for ion implantation induced embedded particle formation via reduction | US08996968 | 1997-12-23 | US06294223B1 | 2001-09-25 | Janet M Hampikian; Eden M Hunt |
| A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process. | ||||||
| 34 | Surface treatment of magnetic recording heads | US794672 | 1997-02-03 | US5838522A | 1998-11-17 | Kyriakos Komvopoulos; Ian G. Brown; Bo Wei; Simone Anders; Andre Anders; C. Singh Bhatia |
| Surface modification of magnetic recording heads using plasma immersion ion implantation and deposition is disclosed. This method may be carried out using a vacuum arc deposition system with a metallic or carbon cathode. By operating a plasma gun in a long-pulse mode and biasing the substrate holder with short pulses of a high negative voltage, direct ion implantation, recoil implantation, and surface deposition are combined to modify the near-surface regions of the head or substrate in processing times which may be less than 5 min. The modified regions are atomically mixed into the substrate. This surface modification improves the surface smoothness and hardness and enhances the tribological characteristics under conditions of contact-start-stop and continuous sliding. These results are obtained while maintaining original tolerances. | ||||||
| 35 | Surface treatment of magnetic recording heads | US306750 | 1994-09-15 | US5476691A | 1995-12-19 | Kyriakos Komvopoulos; Ian G. Brown; Bo Wei; Simone Anders; Andre Anders; Singh C. Bhatia |
| Surface modification of magnetic recording heads using plasma immersion ion implantation and deposition is disclosed. This method may be carried out using a vacuum arc deposition system with a metallic or carbon cathode. By operating a plasma gun in a long-pulse mode and biasing the substrate holder with short pulses of a high negative voltage, direct ion implantation, recoil implantation, and surface deposition are combined to modify the near-surface regions of the head or substrate in processing times which may be less than 5 min. The modified regions are atomically mixed into the substrate. This surface modification improves the surface smoothness and hardness and enhances the tribological characteristics under conditions of contact-start-stop and continuous sliding. These results are obtained while maintaining original tolerances. | ||||||
| 36 | Method for surface modification and apparatus therefor | US630858 | 1990-12-20 | US5246741A | 1993-09-21 | Koukichi Ouhata; Kenichi Natsui |
| A substrate to be modified is placed in a vacuum vessel, a reducing atmosphere is provided over the substrate and simultaneously therewith the substrate is irradiated with accelerated ions, whereby oxygen which bonds to the substrate is freed from the substrate, the oxygen bonds to a material which forms the reducing atmosphere and the surface of the substrate is modified by the accelerated ion. The surface of the substrate can be thus efficiently modifed at relatively low temperatures. Furthermore, by evaporating carbon for an alumina substrate or alumina powder or providing hydrocarbon gas over the alumina substrate or alumina powder in a vacuum vessel, the alumina substrate or alumina powder is providing in the reducing atmosphere and the alumina substrate or alumina powder is irradiated with accelerated nitrogen ions from an ion source, whereby aluminum and oxygen which constitute the alumina substrate or alumina powder are cut off from each other by irradiation with the accelerated nitrogen ions. The oxygen reacts with carbon or hydrocarbon gas which forms the reducing atmosphere to form carbon monoxide or carbon dioxide, which is evacuated. On the other hand, the aluminum is modified to aluminum nitride by the accelerated nitrogen ions or nitrogen particles. That is, the surface of the alumina substrate or alumina powder can be efficiently modifed at relatively low temperatures. | ||||||
| 37 | Stylus for capacity change detection type disc system | US597769 | 1984-04-06 | US4646282A | 1987-02-24 | Hideaki Mizuno; Keiichiro Doi |
| A stylus for a capacity change detection type disc system which reads information signals such as audio or video signals out of a track which is formed in a disc surface as an arrangement of pits corresponding to the information signals has a body portion which is made of a diamond. Argon plus ions are implanted in the stylus body portion from the surface of the diamond portion to graphitize the diamond to provide a conductive layer which serves as a detecting electrode portion. The graphitizing rate is highest at the surface portion of the electrode portion which consists of the formed conductive layer. The graphitizing rate changes from the surface portion toward a portion remote from the surface portion, where the graphitizing rate is lowest, with a variation rate smaller than that of the graphitizing rate which would result from a single implantation of ions into the diamond. | ||||||
| 38 | Method employing ion beams for polishing and figuring refractory dielectrics | US3548189D | 1965-06-16 | US3548189A | 1970-12-15 | MEINEL ADEN B; BASHKIN STANLEY; LOOMIS DONALD A; SCHROEDER JOHN B |
| 39 | Method of producing an oxide coating on crystalline semiconductor bodies | US28049763 | 1963-05-10 | US3260626A | 1966-07-12 | NORBERT SCHINK |
| 40 | Creep-resistant environmental barrier coatings | EP13179468.7 | 2013-08-06 | EP2698452B1 | 2018-05-09 | Das, Rupak; Brittingham, Robert Alan |
| An environmental barrier coating system (14), a method of application and an article (10) formed thereby suitable for reducing creep by incorporation of doping materials in grain boundaries of a bond coat layer (16) to inhibit creep displacement of the EBC system (14) when subjected to shear loading at elevated temperatures. The EBC system (14) includes the bond coat layer (16) on a silicon-containing substrate (12) and at least one ceramic layer (18,20,22) on the bond coat layer (16). The bond coat layer (16) includes silicon and at least one doping material that includes a creep-resistant element. The doping material is located at grain boundaries within the bond coat layer in sufficient size and quantity to improve the creep resistance of the bond coat layer. | ||||||
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