Method of producing an oxide coating on crystalline semiconductor bodies专利检索- .离子注入离子辐射或离子注射专利检索查询-专利查询网

Method of producing an oxide coating on crystalline semiconductor bodies
申请号	US28049763	申请日	1963-05-10	公开(公告)号	US3260626A	公开(公告)日	1966-07-12
申请人	SIEMENS AG;			发明人	NORBERT SCHINK;
摘要
权利要求	2. THE METHOD OF PRODUCING AN OXIDE COATING ON A MONOCRYSTALLINE SILICON BODY, WHICH COMPRISES HEATING THE SILICON BODY TO A TEMPERATURE BETWEEN 250C. AND 500C. FOR AT LEAST 30 MINUTES IN AN ATMOSPHERE SELECTED FROM THE GROUP CONSISTING OF STREAM AND HYDROGEN PEROXIDE AND CONTAINING A SUBSTANCE WHICH AT SAID TEMPERATURE GIVES OFF IONS SELECTED FROM THE GROUP CONSISTING OF HYDROGEN AND ALKALI IONS AND TO VAPORIZE AT LEAST PARTIALLY.
说明书全文