| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 41 | Broadband differential amplifier | EP87303393.0 | 1987-04-16 | EP0244973A2 | 1987-11-11 | Zimmerman, Dale E. |
A differential amplifier (230) with input differential dual gate FETs (232, 234) with one pair of gates (235, 237) tied together, with sources tied together, and with a current source (236, 238) for each of the FETs and inputs at the current source terminals is disclosed. These amplifiers provide large CMRR at frequencies to a few GHz, and fabrication in gallium arsenide is disclosed. A push-pull single-ended output stage provides good power handling and VSWR. |
||||||
| 42 | Amplifier for converting charge signal | JP2003076130 | 2003-03-19 | JP2004289278A | 2004-10-14 | KASHIWASE HAJIME; WATABE HIROMICHI; YOKOYAMA HIROSHI |
| <P>PROBLEM TO BE SOLVED: To provide an amplifier for converting a charge signal, which automatically corrects an offset of a signal level due to electric charge leakages and which reduces an operating load necessary for the signal processing. <P>SOLUTION: A voltage conversion capacitor Cx is charged by positive electric charges of a sensor element, an amplifier A1 converts the electric charges into a positive voltage, which is outputted. On the other hand, when the polarity of the electric charges of the sensor element are inverted negative and reversely flow through the voltage conversion capacitor Cx and are fed back to a capacitor Cp resulting that an output of the amplifier A1 is decreased, the leaked electric charges are superimposed on a signal voltage and the output of the amplifier A1 is negative, then an automatic correction circuit 3 detects the negative output. Then a field effect transistor Q1 is conductive and discharges the electric charges so as to set the input of the amplifier A1 to '0', thereby automatically correcting the offset of the signal level due to the leakage of the electric charges. <P>COPYRIGHT: (C)2005,JPO&NCIPI | ||||||
| 43 | amplifier | JP2002587915 | 2002-04-25 | JP2004527963A | 2004-09-09 | チア、エリック・ロナルド |
| 時間遅延機能をもたらす群遅延特性を備えた表面音響波（ＳＡＷ）フィルタを備えている再循環型増幅器。
【選択図】図１ |
||||||
| 44 | Laminated structure for amplifying surface acoustic wave and amplifier | JP2826195 | 1995-02-16 | JPH10284762A | 1998-10-23 | KUZE NAOHIRO; SHIBATA YOSHIHIKO; SUGANO YASUTO |
| PURPOSE: To obtain a surface acoustic wave amplifier, in which a large amplification degree is generated at low voltage by forming a semiconductor active layer having high carrier mobility onto a piezoelectric substrate. CONSTITUTION: A laminated structure 6 consists of a piezoelectric substrate 1, a semiconductor buffer layer 2 on the substrate 1 and a semiconductor active layer 3 having a film thickness in a range of 5 nm or larger to 500 nm or smaller. The lattice constant of the semiconductor buffer layer 2 is equalized to the lattice constant of the semiconductor active layer 3 or has a value close to the lattice constant of the semiconductor active layer 3 at that time. Reed screen-shaped input/output electrodes 4, 5 are formed onto the piezoelectric substrate 1 in the amplifier, the laminated structure 6 is arranged between both electrodes 4, 5, and electrodes 7 are formed to the semiconductor active layer 3. COPYRIGHT: (C)1998,JPO | ||||||
| 45 | JPH0435926B2 - | JP15304582 | 1982-09-01 | JPH0435926B2 | 1992-06-12 | MINAGAWA SHOICHI; OKAMOTO TAKESHI |
| 46 | Amplification type surface wave receiver | JP24582988 | 1988-09-28 | JPH01115209A | 1989-05-08 | HERUMUUTO SHINKU; RARUFUDEIITAA SHIYUNERU |
| PURPOSE: To amplify and extract a signal passed through the surface wave device by forming a conductive channel on the surface of a base and connecting a series circuit consisting of a power supply and an AC detector to contact electrodes arranged on the surface of the base at an interval. CONSTITUTION: The conductive channel 7 is formed on the surface of the base 8 consisting of a material (a.g. GaAs) indicating a piezo-electric effect and capable of obtaining a conductive state by local doping and the contact electrodes 6, 6 are arranged on the surface of the base 8 at a prescribed mutual interval. The surface wave device modulates the conductance of the channel 7 by generated pizo-electric charge and its change is detected by an AC detector 5 connected to one of the electrodes 6, 6 through a power supply 4 and directly connected to the other. Since the piezoelectric charge acts as gate charge similar to MESFET or MOSFET, the signal passed through the device is amplified and extracted. COPYRIGHT: (C)1989,JPO | ||||||
| 47 | JPS6119172B2 - | JP260180 | 1980-01-16 | JPS6119172B2 | 1986-05-16 | MINAGAWA SHOICHI; OKAMOTO TAKESHI; SAKAI TAKAMASA |
| 48 | Parametric surface acoustic wave amplifier | JP15304582 | 1982-09-01 | JPS5941911A | 1984-03-08 | MINAGAWA SHIYOUICHI; OKAMOTO TAKESHI |
| PURPOSE:To perform a sufficient amplification even with a medium showing the dispersion characteristic, by causing the parametric interaction only when waves satisfying a certain condition are inputted on the frequency dispersion characteristic and propagating these waves through the medium. CONSTITUTION:If non-linearity of surface charge capacity or the like exists on the Si surface just under a pump electrode 6 when an input surface acoustic wave 9 is propagated on the pump electrode 6, the piezoelectric potential due to the input surface acoustic wave propagated in this part and the potential of a pump power source 7 applied to the electrode 6 cause the parametric interaction through the surface charge capacity non-linear characteristic to generate an idler wave as a new wave. Energy is given to surface acoustic waves 10 and 11 from the power source 7 by this parametric interaction, and they are increased and propagated on the medium and are converted to electric signals by an output transducer 5 and are outputted from terminals 5A and 5B. | ||||||
| 49 | JPS5835404B2 - | JP16929979 | 1979-12-27 | JPS5835404B2 | 1983-08-02 | MINAGAWA SHOICHI; OKAMOTO TAKESHI |
| 50 | Elastic surface wave device | JP260180 | 1980-01-16 | JPS56100510A | 1981-08-12 | MINAGAWA SHIYOUICHI; OKAMOTO TAKESHI; SAKAI TAKAMASA |
| PURPOSE: To improve the efficiency of parametric interactin, by protruding the metallic strip in the propagation path of the elastic surface wave into the region outside of the propagation path of this elastic surface wave. CONSTITUTION: Plural metallic strips S are arranged in the propagation path of the elastic surface wave in the lamination body provided with piezoelectric material 23 and semiconductor 1. These metallic strips S are protruded onto the semiconductor outside of the propagation path of the said elastic surface wave, and the space charge layer capacitance nonlinearity caused on the semiconductor surface in this protruded part is used as the main acting factor of parametric interaction. COPYRIGHT: (C)1981,JPO&Japio | ||||||
| 51 | Surface-elastic-wave parametric device | JP16033679 | 1979-12-12 | JPS5684010A | 1981-07-09 | MINAGAWA SHIYOUICHI; OKAMOTO TAKESHI; SAKAI TAKAMASA |
| PURPOSE:To improve the efficiency of pump electric power by connecting voltage varactor diodes to pump electrodes on a propagation path for a surface elastic wave and by applying a pump voltage to them. CONSTITUTION:A pump voltage of a frequency twice selected frequency f0 is applied from high-frequency power source 9 to voltage varactor diodes C1-Cn. An electric signal applied to transducer 5 propagates on the surface of piezoelectric substance substrate A and while it is propagating through pump electrode groups M1-Mn, a signal component of approximate frequency f0is parametric-amplified. The amplified signal is reconverted by transducer 6 into an electric signal, which is outputted. Since the sum of widths and intervals of pump electrodes M1-Mn is made less of length lambda0 of irradiation, mechanical reflection is reduced. | ||||||
| 52 | Surface elastic wave device | JP6492379 | 1979-05-28 | JPS55158720A | 1980-12-10 | MINAGAWA SHIYOUICHI; OKAMOTO TAKESHI |
| PURPOSE: To secure extraction of the paranetric amplifying signal in isolation from the input signal, by inserting the multistrip coupler between the input/output electrode and the pump electrode which are provided in parallel against the pump electrode and then extracting the receding wave signal of the pump electrode out of the output electrode. CONSTITUTION: Insulating film I' is formed on the surface of semiconductor substrate S, and then piezoelectric film I is formed on the surface of film I'. And then device substrate 11 is formed with the piezoelectric semiconductor unit. In this case, input electrode M 1 and output electrode M 2 are provided in parallel against pump electrode M 3 of substrate 11. Multistrip coupler MS is distributed between electrode M 3 of substrate 11 of such constitution and electrodes M 1, M 2. The number N of the strip electrodes of coupler MS is set so as to satisfy the equation, where the length of the surface elastic wave is denoted as λ, the electric-mechanical coupling coefficient at substrate 11 as K 2, the periodically repetitive interval of the strip electrodes as (d), and the effective coefficient against interval (d) as α respectively. In this way, the receding wave of electrode M 3 can be extracted out of electrode M 2. COPYRIGHT: (C)1980,JPO&Japio | ||||||
| 53 | Surface elastic wave amplifier | JP10727177 | 1977-09-08 | JPS5441089A | 1979-03-31 | OSHISHIBA TSUNEO; MINAGAWA SHIYOUICHI |
| 54 | JPS4813879B1 - | JP1386570 | 1970-02-19 | JPS4813879B1 | 1973-05-01 | |
| 55 | Grouped nano spectrum - rf power amplifier having a size of the switch | JP2012533567 | 2010-10-04 | JP2013507866A | 2013-03-04 | テンプル，ウルフギャング; ウェグナー，ダーク |
| The invention concerns a method for transmission of signals over an optical connection (OF1) from a transmitting device (BS) to a receiving device (RAH1), wherein electrical signals are converted into optical signals in an electro-optical converter (EO1, EO2) located in the transmitting device (BS), the optical signals are converted from optical signals into electrical signals in an opto-electrical converter (OE1) located in the receiving device (RAH1), and the electrical signals are amplified in an amplifying unit located in the receiving device (RAH1) by means of stimulation of mechanical self-oscillations of coupling elements in dependence of the spectral components of the electrical signals, a transmitting device and a receiving device therefor. | ||||||
| 56 | Charge signal converting amplifier, and the in-cylinder pressure measurement device | JP2003076130 | 2003-03-19 | JP4309158B2 | 2009-08-05 | 一 柏瀬; 宏 横山; 廣道 渡部 |
| 57 | JPS6320044B2 - | JP10727277 | 1977-09-08 | JPS6320044B2 | 1988-04-26 | MIKOSHIBA NOBUO; MINAGAWA SHOICHI |
| 58 | Wide-band differential amplifying circuit | JP10112887 | 1987-04-23 | JPS6333004A | 1988-02-12 | DEERU YUUJIN JINMAAMAN |
| 59 | JPS632375B2 - | JP9064981 | 1981-06-11 | JPS632375B2 | 1988-01-19 | MORI SEIJI |
| 60 | Receiver | JP11332483 | 1983-06-23 | JPS604335A | 1985-01-10 | MORI SEIJI |
| PURPOSE: To improve the tracking characteristic to reduce distortion and extend a tracking range by compensating the group delay characteristic of an SAW (parametric amplification-type surface acoustic wave) amplifier with two equalizer circuits. CONSTITUTION: A coming signal received by an antenna 1 is inputted to an SAW amplifier 3 through a matching circuit 2, and an amplified output is obtained from an output electrode 3-3. This output is inputted to a pump power amplifier 17 through a frequency converter 5, a tracking equalizer 7, and an AF equalizer 12 and is subjected to power amplification in this amplifier 17 and is inputted to a pump electrode 3-2. In this case, the tracking equalizer 7 has a frequency characteristic opposite to that of the SAW amplifier 3 with respect to amplitude and phase and cancel distortion components, and the AF equalizer 12 compensates a fixed delay time of the SAW amplifier and delay time of the other circuits by a negative group delay, thus improving the tracking characteristic. COPYRIGHT: (C)1985,JPO&Japio | ||||||
QQ群二维码
意见反馈
意见反馈