| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 121 | Acoustic surface wave devices | US3739290D | 1972-05-02 | US3739290A | 1973-06-12 | MARSHALL F; PAIGE E |
| Acoustic surface wave amplifier devices wherein a coupler comprising at least several spaced filamentary conductors formed over a surface across the path of acoustic surface waves, is used to couple the acoustic surface waves to a semiconductor body mounted in close proximity to but electrically insulated from the filamentary conductors so that an electron drift established in the semiconductor body will amplify the acoustic surface waves. The semiconductor body may be mounted alongside a substrate in which the acoustic surface waves are propagated, or over the path of the acoustic surface waves, or over part of the substrate adjacent to the path of the acoustic surface waves. The part of the coupler under the semiconductor body may be isolated from the substrate by a pad of non-piezoelectric material or by the semiconductor body.
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| 122 | Generation of weakly damped electron plasma surface waves on a semiconductor: amplification and coupling of acoustic waves on an adjacent piezoelectric | US3731214D | 1971-04-16 | US3731214A | 1973-05-01 | BERS A |
| Conduction electrons in a semiconductor which is subjected to an applied electric drift field and magnetic field are excited to give rise to a weakly damped electron plasma surface wave carrying negative or positive energy depending upon the direction of the applied magnetic field. Acoustic waves traveling along the surface of an adjacent piezoelectric are resonantly amplified and coupled to the electron surface waves.
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| 123 | Self excited electron phonon resonator | US3714604D | 1970-07-13 | US3714604A | 1973-01-30 | KALISKI S |
| A method of obtaining an unlimited, in linear range, resonance of a piezoelectric surface wave by providing a piezoelectric semiconductor crystal having surfaces fulfilling Sommerfield boundary condition requirements, irradiating said crystal to establish therein a thin, near surface semiconducting layer to thereby generate surface waves in said layer, and amplifying said waves by applying a high voltage direct current to said layer; in addition, high frequency signals may be applied to said layer.
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| 124 | Solid-state, acoustic-wave amplifiers | US3686579D | 1971-06-21 | US3686579A | 1972-08-22 | EVERETT PETER G |
| In a signal amplifier, an input transducer launches acoustic surface waves at a given velocity along a predetermined path on a piezoelectric substrate. An output transducer responds to those waves for developing an output signal. A film of semi-conductive material between the input and output transducers responds to a unidirectional potential for conducting charge carriers alongside the propagation path at a velocity slightly greater than the acoustic wave velocity to achieve a amplification of the acoustic surface waves. Finally, a unidirectional field is applied transversely through the semi-conductive film to control the density of the charge carriers and the amplification.
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| 125 | Electroacoustic transducer having a diaphragm made of at least one layer of piezoelectric material | US3683129D | 1969-09-25 | US3683129A | 1972-08-08 | ROOS JAN; BOONE SALOMON |
| An electroacoustic transducer comprising a thin-walled cylindrical sleeve with a vibrating diaphragm that includes at least one layer of piezoelectric material and rigidly secured at its peripheral edge to one end of the sleeve. This allows the diaphragm to perform a pivotal movement at its peripheral edge. In a second embodiment the sleeve is conical with the narrow end flanged inwardly and the diaphragm rigidly secured thereto. If the sleeve is metal, an integrated amplifier may be mounted thereon so that the sleeve acts as a heat sink.
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| 126 | Method of continuous amplification of surface and transverse coupled elastic-spin waves | US3659122D | 1970-12-14 | US3659122A | 1972-04-25 | KALISKI SYLWESTER |
| A method of continuous amplification of elastic-spin waves with use of a circuit of a slab ferromagnetic crystal on which a semiconductor layer is superposed comprises generating a propagating waves in the slab, and applying a direct voltage to the semiconductor layer to produce a current of drifting electrons in the layer, inducing an elastic wave in the layer through the propagating wave in the slab which produces a piezoelectric field in the layer, modulating the current of drifting electrons with the piezoelectric field, amplifying the elastic wave in the semiconductor layer and in the slab when the drift velocity of the drifting electron reaches a critical velocity, and applying a constant magnetic field to the circuit to produce a spin-acoustic resonance, the elastic wave in the ferromagnetic slab amplifying the spin wave in the slab through spin-elastic coupling.
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| 127 | Microwave acoustic surface wave amplifier and method of fabrication | US3614643D | 1970-04-01 | US3614643A | 1971-10-19 | SLOBODNIK ANDREW J JR |
| Nonlinear acoustic properties of crystalline media are utilized to achieve amplification in an acoustic surface wave device. Power density curves of acoustic surface waves traveling along a piezoelectric substrate member have been found to exhibit negative slopes. Amplification is accomplished by modulating the acoustic surface wave at a point on the substrate member corresponding to the first zero slope and demodulating it at the second zero slope.
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| 128 | Acoustic signal amplifier | US3568079D | 1969-04-24 | US3568079A | 1971-03-02 | YODER MAX N |
| There is disclosed a microwave ultrasonic amplifier employing a piezoelectric semiconductor element fabricated with alternate amplifying and insulating sections. The insulating sections are included to periodically attenuate undesired, higher frequency, out of band phonon signals which would otherwise build up and saturate the amplifier. The coherent signals, because of their lower frequency, are not appreciably attenuated in these sections and, consequently, their amplitude is progressively increased in each amplifying section.
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| 129 | Method of and apparatus for changing frequency power and/or delay time of wave energy | US3530302D | 1967-06-14 | US3530302A | 1970-09-22 | MORGENTHALER FREDERIC R |
| A device for processing electromagnetic wave energy by converting the wave energy to spin waves and/or elastic waves, the present disclosure being particularly directed to the concept of providing a device made up of a single-crystal material which contains non-uniform material parameters to give graded values of material saturation 4 pi Ms. The material discussed in greatest detail is YIG and the non-uniform material parameters are furnished by doping the YIG with gallium. The graded material parameters in combination with an external magnetic bias field H result in an internal magnetic bias field H. The electromagnetic energy as it enters the material is acted upon in a manner that is influenced greatly by the contour of H. The contour of H in the present disclosure, in turn, is predetermined to present gradations in H which will allow the conversion mentioned and which allow predetermination of the wavenumber k of the magnons and/or phonons thereby formed. Furthermore, the place or space within the crystal at which conversion occurs can be somewhat determined by the profile of H thereby provided. | ||||||
| 130 | Microelectronic frequency selective apparatus with vibratory member and means responsive thereto | US46509065 | 1965-06-18 | US3413573A | 1968-11-26 | NATHANSON HARVEY C; WICKSTROM ROBERT A |
| 131 | Ultrasonic amplifier device | US63327567 | 1967-04-24 | US3406350A | 1968-10-15 | NEWELL WILLIAM E |
| 132 | Ultrasonic amplifier device with means for preventing self-oscillation | US65839267 | 1967-08-04 | US3389343A | 1968-06-18 | NEWELL WILLIAM E |
| 133 | Solid state plasma acoustic amplifier with heat dissipating means | US58721166 | 1966-10-17 | US3343097A | 1967-09-19 | BARTELINK DIRK J |
| 134 | Multi-electrode acoustic amplifier with unitary transducing and translating medium | US59400066 | 1966-11-14 | US3334307A | 1967-08-01 | BLUM ASHER S |
| 135 | Ultrasonic amplifiers. oscillators, circulators, isolators and switches | US26091D | USRE26091E | 1966-09-20 | ||
| 136 | Stabilized ultrasonic amplifier | US27505963 | 1963-04-23 | US3234482A | 1966-02-08 | ROWEN JOHN H; WHITE DONALD L |
| 137 | Elastic wave responsive apparatus | US20488062 | 1962-06-25 | US3231779A | 1966-01-25 | WHITE RICHARD M |
| 138 | Traveling acoustic wave amplifier utilizing a piezoelectric material | US10567961 | 1961-04-26 | US3158819A | 1964-11-24 | TIEN PING K |
| 139 | Audience reaction integrator | US72283247 | 1947-01-18 | US2480607A | 1949-08-30 | RACKEY CHESTER A; PHELAN THOMAS H |
| 140 | Mechanical amplifier | US28001839 | 1939-06-20 | US2254278A | 1941-09-02 | FALEY GEORGE J V |
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