| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 101 | Voice-current telephone repeater | US28069519 | 1918-06-12 | US1444805A | 1923-02-13 | BESSEY SMITH ARTHUR |
| 102 | Arthur bessey smith | US1412067D | US1412067A | 1922-04-11 | ||
| 103 | Method of and apparatus for amplifying varying electric currents. | US1911667941 | 1911-12-26 | US1033629A | 1912-07-23 | SOUTHGATE LOUIS W |
| 104 | Electric relay. | US1908445069 | 1908-07-24 | US1000939A | 1911-08-15 | PONTOIS LEON J LE |
| 105 | TRANSDUCER ASEMBLY WITH MODIFIABLE BUFFER CIRCUIT AND METHOD FOR ADJUSTING THEREOF | PCT/US2004007171 | 2004-03-10 | WO2004082324A3 | 2005-03-10 | BOOR STEVEN E |
| A method and system for adjusting the frequency response characteristics of a transducer assembly (312) is disclosed. The transducer assembly (312) includes a modifiable buffer circuit (100) being generally enclosed within a housing (314). Electrical signal connections for modifying the operating state of the modifiable buffer circuit (100) are accessible outside the housing (314). The modifiable buffer circuit (100) further includes a plurality of signal inputs (234) and outputs (230), the plurality of signal inputs (234) are accessible from outside the housing. A predetermined relationship exists between the plurality of signal inputs (234) and the plurality of outputs (230). A resistor network (224) is operably connected to the plurality of outputs (230) wherein a portion of the resistor network (224) is operably disconnected from a filter network (218) in response to the plurality of signal inputs (234). | ||||||
| 106 | AMPLIFIER | PCT/GB0201927 | 2002-04-25 | WO02091567A2 | 2002-11-14 | CHEER ERIC RONALD |
| A re-circulating amplifier comprising a SAW filter with group delay characteristics for providing a time delay function. | ||||||
| 107 | RF power amplifier with spectrally grouped nanosized switches | US13499695 | 2010-10-04 | US08674762B2 | 2014-03-18 | Wolfgang Templ; Dirk Wiegner |
| The invention describes a radio frequency (=RF) power amplifier (20), comprising—a coupling array (1) comprising a plurality of nano-sized coupling elements (2; 41; 51), wherein the coupling elements (2; 41; 51) are grouped into a number N of sub-arrays (SA-1 . . . SAN), with each sub-array (SA-1 . . . SAN) exhibiting•a specific resonance frequency (f1 . . . fN) and•a specific attenuation of a mechanical self-oscillation of its coupling elements (2; 41; 51), wherein for the coupling elements (2; 41; 51) of each sub array (SA-1 . . . SAN), there is a stimulating means for stimulating a mechanical self-oscillation, —and a signal processing unit (22) for controlling the stimulating means with stimulating pulses having a pulse form and timing calculated by the signal processing unit (22) based on an evaluation of the spectral components of an RF signal to be amplified, namely the amplitudes (C1. . . CN) and phases (Φ1. . . ΦN) at the frequencies (f1 . . . fN) corresponding to said specific resonance frequencies. The inventive RF power amplifier provides a high efficiency and a high linearity, in particular at high RF frequencies. | ||||||
| 108 | RF POWER AMPLIFIER WITH SPECTRALLY GROUPED NANOSIZED SWITCHES | US13499695 | 2010-10-04 | US20120200349A1 | 2012-08-09 | Wolfgang Templ; Dirk Wiegner |
| The invention describes a radio frequency (=RF) power amplifier (20), comprising—a coupling array (1) comprising a plurality of nano-sized coupling elements (2; 41; 51), wherein the coupling elements (2; 41; 51) are grouped into a number N of sub-arrays (SA-1 . . . SAN), with each sub-array (SA-1 . . . SAN) exhibiting•a specific resonance frequency (f1 . . . fN) and•a specific attenuation of a mechanical self-oscillation of its coupling elements (2; 41; 51), wherein for the coupling elements (2; 41; 51) of each sub array (SA-1 . . . SAN), there is a stimulating means for stimulating a mechanical self-oscillation, —and a signal processing unit (22) for controlling the stimulating means with stimulating pulses having a pulse form and timing calculated by the signal processing unit (22) based on an evaluation of the spectral components of an RF signal to be amplified, namely the amplitudes (C1. . . CN) and phases (Φ1. . . ΦN) at the frequencies (f1 . . . fN) corresponding to said specific resonance frequencies. The inventive RF power amplifier provides a high efficiency and a high linearity, in particular at high RF frequencies. | ||||||
| 109 | Microphone preamplifier | US10254030 | 2002-09-24 | US07072478B2 | 2006-07-04 | Andres Hohendahl |
| A microphone preamplifier. An electrical signal from a microphone is received via a shielded cable by an input stage cascaded with an output stage. The input stage contains an impedance converter and a phase inverter and receives feedback that reduces input capacitance, actively shields the coaxial cable, and stabilizes the input stage. The output stage contains a buffer and output driver and provides amplified versions of the input stage output. The preamplifier contains means for transformerless phantom powering the microphone and the microphone preamplifier, for sharing current between the input and the output stages, and for limiting the frequency at the output of the microphone. | ||||||
| 110 | Amplifier converting charge signal | US10801390 | 2004-03-15 | US07049729B2 | 2006-05-23 | Hajime Kashiwase; Hiromichi Watanabe; Hiroshi Yokoyama |
| A positive charge of a sensor element is charged in a signal converting circuit, is converted into a positive voltage, and is outputted. When the polarity of the charge of the sensor element is inverted to the negative and an output of the signal converting circuit is decreased, the leaked charges are superimposed and become the negative. An automatic correction circuit detects the negative output and discharges the charges so as to set the input to “0”. Thus, the offset of the signal level due to the charge leakage is automatically corrected. | ||||||
| 111 | Amplifier | US10474719 | 2002-04-25 | US06940347B2 | 2005-09-06 | Eric R Cheer |
| A re-circulating amplifier comprising a SAW filter with group delay characteristics for providing a time delay function. | ||||||
| 112 | Amplifier | US10474719 | 2003-10-10 | US20040104769A1 | 2004-06-03 | Eric Ronald Cheer |
| A re-circulating amplifier comprising a SAW filter with group delay characteristics for providing a time delay function. | ||||||
| 113 | Surface acoustic wave device | US036259 | 1993-03-24 | US5440189A | 1995-08-08 | Hideaki Nakahata; Naoji Funimori |
| Surface acoustic eave devices making use of the interaction between surface acoustic wave and carriers include at least a semiconductor part, a piezoelectric layer and an intermediate insulating film. The devices of this invention include diamond or diamond-like carbon as the insulating film in contact with the piezoelectric layer. Since diamond or diamond-like carbon has the highest sound velocity, the surface acoustic wave velocity is extremely high in the piezoelectric layer in contact with diamond or diamond-like carbon. The high surface acoustic wave velocity alleviates the need of producing fine interdigital transducers. This invention is applicable to surface acoustic wave phase-shifters, surface acoustic amplifiers and surface acoustic convolvers. | ||||||
| 114 | Amplifying surface wave receiver | US245379 | 1988-09-16 | US4928069A | 1990-05-22 | Helmut Schink; Ralf D. Schnell |
| An amplifying surface wave receiver for a surface wave element composed of a material which exhibits the piezo effect and which can be rendered electrically conductive by local doping, where a doped region is formed at the upper portion of an insulating substrate body (8) which forms the surface wave element and which is composed of piezo electric material, said doped region forms a conductive channel (7) between at least two contact electrodes which are spaced a defined distance from each other, and the conductive channel (7) formed such that occurring piezo charges are positioned so as to modulate the conductivity of said channel. One terminal of a voltage source (4) is connected to one of the contact electrodes (6) and the other terminal is connected to the other contact electrode (6) through an alternating current detector (5). | ||||||
| 115 | Broadband differential amplifier | US166142 | 1988-03-10 | US4812780A | 1989-03-14 | Dale E. Zimmerman |
| A differential amplifier (230) with input differential dual gate FETs (232,234) with one pair of gates (235,237) tied together, with sources tied together, and with a current source (236,238) for each of the FETs and inputs at the current source terminals is disclosed. These amplifiers provide large CMRR at frequencies to a few GHz, and fabrication in gallium arsenide is disclosed. A push-pull single-ended output stage provides good power handling and VSWR. | ||||||
| 116 | Acoustic surface wave devices | US4381 | 1987-01-12 | USRE32859E | 1989-02-07 | Frank G. Marshall; Edward G. S. Paige |
| Acoustic surface wave devices of a novel class characterized by the provision of coupling means comprising at least several spaced filamentary electrical conductors extending over a first region and a second region for causing acoustic surface waves propagated across the coupling means in the first region to interact with acoustic surface waves propagated across the coupling means in the second region, by means of alternating electric signals induced on the filamentary electric conductors. The regions to be coupled are preferably formed on piezoelectric material, but modified forms of the coupling means can be made operable with other materials and suitable biassing fields. The described devices include acoustic beam width changing, impedance matching, track changing and phase-sensitive switching devices; a hybrid junction device, resonator and recirculating filter devices, tapped acoustic delay lines, unidirectional transducers, acoustic surface wave reflectors and mode discriminators, electrically-controlled acoustic beam switches and directional couplers, acoustic beam splitters, and means for reducing unwanted reflections of acoustic surface waves. | ||||||
| 117 | Receiver including surface acoustic wave amplifier | US623808 | 1984-06-22 | US4610031A | 1986-09-02 | Masaharu Mori |
| A receiver includes a surface acoustic wave amplifier provided in a high frequency amplification stage and generating two outputs corresponding to acoustic waves which propagate through said amplifier in the opposite directions. One of the outputs is demodulated by a phase locked loop demodulator or by a frequency discriminator and is applied to and controls a voltage control oscillator. Frequency modulated components of an output from the voltage control oscillator is used to produce frequency modulated components of a pumping power for the surface acoustic wave amplifier. | ||||||
| 118 | Surface acoustic wave parametric device | US201127 | 1980-10-27 | US4471255A | 1984-09-11 | Nobuo Mikoshiba; Shoichi Minagawa |
| An surface acoustic wave device, especially amplifier which includes input and output means for electrical signals provided so as to be spaced on a surface of a piezoelectric material which comprises a laminate in combination with a semiconductor, and an electrode provided in a surface signal wave propagation path between said input and output means for supplying pumping power. | ||||||
| 119 | Surface-acoustic-wave device | US223059 | 1981-01-07 | US4365216A | 1982-12-21 | Shoichi Minagawa; Takeshi Okamoto; Takamasa Sakai |
| A surface-acoustic-wave device wherein a plurality of metal strips (S) are provided on a propagation path of surface acoustic wave which is formed in a laminate comprised of a piezoelectric layer (23) and a semiconductor (1), the metal strips are extended onto the semiconductor outside the propagation path of surface acoustic wave, and depletion layer capacitance non-linearity created on the semiconductor surface at a region where the metal strips are extended is used as a main factor of a parametric interaction. | ||||||
| 120 | Surface-acoustic-wave device | US177966 | 1980-08-14 | US4357553A | 1982-11-02 | Shoichi Minagawa; Takamasa Sakai; Takeshi Okamoto; Morihiro Niimi |
| A surface-acoustic-wave device has a laminate formed of a semiconductor and a piezoelectric layer and a depletion layer control means locally provided at an interface portion of the semiconductor and said piezoelectric layer, wherein a parametric interaction is caused at a region other than an area where the depletion layer control means is provided and a depletion layer capacitance is controlled by applying a DC bias voltage and a pumping voltage to the depletion layer control means. | ||||||
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