Surface elastic wave device |
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| 申请号 | JP6492379 | 申请日 | 1979-05-28 | 公开(公告)号 | JPS55158720A | 公开(公告)日 | 1980-12-10 |
| 申请人 | Clarion Co Ltd; | 发明人 | MINAGAWA SHIYOUICHI; OKAMOTO TAKESHI; | ||||
| 摘要 | PURPOSE: To secure extraction of the paranetric amplifying signal in isolation from the input signal, by inserting the multistrip coupler between the input/output electrode and the pump electrode which are provided in parallel against the pump electrode and then extracting the receding wave signal of the pump electrode out of the output electrode. CONSTITUTION: Insulating film I' is formed on the surface of semiconductor substrate S, and then piezoelectric film I is formed on the surface of film I'. And then device substrate 11 is formed with the piezoelectric semiconductor unit. In this case, input electrode M 1 and output electrode M 2 are provided in parallel against pump electrode M 3 of substrate 11. Multistrip coupler MS is distributed between electrode M 3 of substrate 11 of such constitution and electrodes M 1 , M 2 . The number N of the strip electrodes of coupler MS is set so as to satisfy the equation, where the length of the surface elastic wave is denoted as λ, the electric-mechanical coupling coefficient at substrate 11 as K 2 , the periodically repetitive interval of the strip electrodes as (d), and the effective coefficient against interval (d) as α respectively. In this way, the receding wave of electrode M 3 can be extracted out of electrode M 2 . COPYRIGHT: (C)1980,JPO&Japio |
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