专利汇可以提供Method of regulating threshold voltage of fet having floating gate专利检索,专利查询,专利分析的服务。并且PURPOSE:To regulate a threshold voltage Vth of a FET with high accuracy and to enable a FET not having a Vth as required as it is produced to be remedied, by applying write controlling pulses whose width is determined based on a difference between a threshold voltage Vth that the FET has when it is produced and the threshold voltage Vth as required. CONSTITUTION:For a FET in which a control gate and a floating gate for receiving and holding electric charge are provided on a channel region, a pulse width is determined based on a difference between a threshold voltage Vth of the FET in the state where no charge is injected into the floating gate and a threshold voltage Vth to be applied to the FET. Pulses whose width is thus determined are applied to the control gate or a drain so that electric charge is injected into the floating gate. For example, when the substrate has conductivity of p-type and source/drain has conductivity of n type, the source and the substrate is fixed at 0V. A voltage of +6-8V is applied to the drain to cause avalanche breakdown and pulses of +1-2.5V are applied to the control gate.,下面是Method of regulating threshold voltage of fet having floating gate专利的具体信息内容。
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