Manufacture of semiconductor laser
专利汇可以提供Manufacture of semiconductor laser专利检索，专利查询，专利分析的服务。并且PURPOSE:To enable to realize a higher-output operation and to obtain good quality of optical beams having no astigmatism by a method wherein a cross-shaped step difference is formed in a substrate and active layers, which are mutually different in layer pressure, are formed with favorable reproducibility in the longitudinal direction of the resonator by utilizing the characteristics of a liquid-phase crystal growing method. CONSTITUTION:A cross-shaped SiO2 mask is formed in an N-type GaAs substrate and an etching is performed on the GaAs substrate with CH3-OH etching solution containing Br2 of 3%. Then, the SiO2 mask is removed and after the crystal surface of the substrate was cleaned, an N type Al0.4Ga0.6As layer 2; an Al0.1Ga0.9As layer 3, which is turned into an active layer; a P type Al0.4Ga0.6 As layer 4; and a P type GaAs layer 5 are successively formed on the GaAs substrate 1 by a liquid-phase crystal process. By this method, the active layer 3 is made into a thinness as thin as 0.03mum or thereabout on the section of the region in the vicinity of the reflective surface of a semiconductor laser. On the other hand, the section of the layer 3, which is turned into an active layer, is formed in a thickness as thick as 0.1mum in the central part of the region. As a result, a high beam output can be obtained, thereby enabling to obtain good quality of beams having no astigmatism.，下面是Manufacture of semiconductor laser专利的具体信息内容。
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