Material for semiconductor substrate
专利汇可以提供Material for semiconductor substrate专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain a material, which satisfies both thermal conductivity and a thermal expansion coefficient and to which there is no problem, such as virulence, difficulty for acquistition, etc., by mixing and molding Cu powder at a specific rate and W powder, Mo powder or W-Mo alloy powder in specific grain size and baking the shape in a reducing atmosphere. CONSTITUTION:Cu Powder at a final product ratio of 5-20wt% and W powder, Mo powder or W-Mo alloy powder in 0.5-5mum mean grain size are mixed and molded, and baked in a reducing atmosphere. A Cu ratio is brought to 5- 20wt% in order to keep a thermal expansion coefficient within a range of 6-8 (X10 / deg.C). The mean grain size of W powder or Mo powder is brought to 0.5- 5mum because the bulk of powder is large and density on molding is difficult to increase owing to the air being contained among powder at pressing and molding at 0.5mum or less and the powder must be sintered at 1,500 deg.C or more in order to obtain a dense alloy with Cu, Cu disappears remarkably due to evaporation, the variability and variation of compositions are generated and an alloy of predetermined compositions is difficult to be acquired at 5mum or more.，下面是Material for semiconductor substrate专利的具体信息内容。
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