子分类：
| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 101 | Nanocrystals including a group IIIA element and a group VA element, method, composition, device and other products | US12454706 | 2009-05-21 | US08354785B2 | 2013-01-15 | Christopher R. Clough; Craig Breen; Jonathan S. Steckel; Ebenezer Selwyn Arun Thambaw |
| A nanocrystal comprising a semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal including a core comprising a first semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material disposed on at least a portion of the nanocrystal core, wherein the semiconductor material comprises at least three chemical elements and is obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. A population of nanocrystals, method for preparing nanocrystals, compositions, and devices including nanocrystals are also disclosed. | ||||||
| 102 | Method of Producing Stable Oxygen Terminated Semiconducting Nanoparticles | US12991879 | 2009-04-09 | US20120018551A1 | 2012-01-26 | David Thomas Britton; Margit Harting |
| A method is provided of producing inorganic semiconducting nanoparticles having a stable surface. The method comprises providing an inorganic bulk semiconductor material, such as silicon or germanium, and milling the bulk semiconductor material in the presence of a selected reducing agent. The reducing agent acts to chemically reduce oxides of one or more component elements of the semiconductor material, or prevent the formation of such oxides by being preferentially oxidised, thereby to provide semiconducting nanoparticles having a stable surface which allows electrical contact between the nanoparticles. The milling may take place in a mill in which the milling media and/or one or more components of the mill comprise the selected reducing agent. For example, the milling can be carried out in a high energy mill with a hammer action in which a pestle of the mill, a mortar of the mill, or both are composed of the selected reducing agent, or a low energy, stirred media mill, such as a ball mill, a rod mill or similar, in which the milling media, a lining of the mill, or both are composed of the reducing agent. The milling media or mill are typically composed of a metal selected from the group comprising iron, chromium, cobalt, nickel, tin, titanium, tungsten, vanadium, and aluminium, or an alloy containing one or more of said metals. In another embodiment of the method, the selected reducing agent comprises a liquid contained in the mill during milling of the bulk semiconductor material. The liquid is typically an acidic solution containing any of hydrochloric, sulphuric, nitric, acetic, formic, or carbonic acid, or a mixture thereof. The invention extends to a mill for carrying out the method. | ||||||
| 103 | Nanocrytals including a Group IIIA element and a Group VA element, method, composition, device and other products | US12454706 | 2009-05-21 | US20100052512A1 | 2010-03-04 | Christopher R. Clough; Craig Breen; Jonathan S. Steckel; Ebenezer Selwyn Arun Thambaw |
| A nanocrystal comprising a semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal including a core comprising a first semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material disposed on at least a portion of the nanocrystal core, wherein the semiconductor material comprises at least three chemical elements and is obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. A population of nanocrystals, method for preparing nanocrystals, compositions, and devices including nanocrystals are also disclosed. | ||||||
| 104 | TRANSPARENT ELECTRODE SURFACE-TREATED USING INDIUM ANTIMONIDE AND METHOD OF SURFACE-TREATING TRANSPARENT ELECTRODE | US11697855 | 2007-04-09 | US20080067923A1 | 2008-03-20 | Young Soo Yoon; Seung Hyun Jee; Soo Ho Kim; Jae Hwan Ko |
| A transparent electrode for use in display devices, such as OLEDs and OTFTs, is provided. The transparent electrode includes an indium antimonide (InSb) layer having a predetermined thickness on the surface thereof. The transparent electrode is imparted with an increased work function without changing light transmittance. | ||||||
| 105 | Compositions including nanoparticles having a rutile-like crystalline phase, and methods of making the same | US10915295 | 2004-08-10 | US07304106B2 | 2007-12-04 | John T. Brady; David S. Arney |
| A nanocomposite precursor comprises a plurality of nanoparticles homogeneously dispersed in an organic binder precursor. The nanocomposite precursor is useful for forming a nanocomposite, suitable for use as a protective coating, wherein the plurality of nanoparticles is homogeneously dispersed in an organic binder. The nanoparticles comprise Ti/Sb mixed oxide nanoparticles containing a rutile-like crystalline phase, wherein the ensemble average rutile-like crystalline phase content of the Ti/Sb mixed oxide nanoparticles is at least 20 weight percent, and wherein the weight ratio of antimony to titanium in the Ti/Sb mixed oxide nanoparticles is in a range of from at least 0.42 up to and including 2.93. | ||||||
| 106 | Agglomerated nanoparticles having a rutile-like crystalline phase | US10915308 | 2004-08-10 | US07250118B2 | 2007-07-31 | John T. Brady; David S. Arney; Robert W. Ferguson; James A. Higgins; Charles J. Studiner, IV |
| Agglomerated nanoparticles including Ti/Sb mixed oxide nanoparticles having a rutile-like crystalline phase content of at least 20 weight percent, wherein the nanoparticles have at least one organic moiety bound to the nanoparticle surface, and wherein the weight ratio of antimony to titanium in the Ti/Sb mixed oxide nanoparticles is in a range of from at least 0.42 up to and including 2.93. The agglomerated nanoparticles are redispersible into a liguid vehicle. | ||||||
| 107 | Method of manufacturing nanoscale metal oxide particles | US11226727 | 2005-09-14 | US20060247354A1 | 2006-11-02 | Ping He; Hang Jin |
| A new method of manufacturing nanoscale single- and multi-component metal oxide particles is described. In a first step of the method, a first solution that includes one or more metal salts, an acid, and a solvent is formed; in a second step, a second solution that includes an organic polymer, a base, and water is formed; in a third step, the first solution is combined with the second solution to form a combined solution, and a precipitation reaction occurs such that metal hydroxide particles precipitate out of the combined solution; in a fourth step, the metal hydroxide particles are collected, rinsed, and dried; and finally, in a fifth step, the metal hydroxide particles are heated, thereby forming nanoscale metal oxide particles of less than about 100 nm in size. Exemplary nanoscale particles that may be produced using this method include indium tin-oxide (ITO) and antimony doped-tin oxide (ATO). | ||||||
| 108 | Fine particles of antimony tin oxide for sunscreen, dispersion thereof for sunscreen material formation, sunscreen material and transparent base material for sunscreen | US10482296 | 2003-07-01 | US20050163999A1 | 2005-07-28 | Takeshi Chonan; Hiroko Kuno |
| Physical characteristics of ATO fine particles capable of exhibiting such optical properties as a high visible light transmittance, a low solar radiation transmittance, and a low haze value when the ATO fine particles are formed on a transparent substrate or in the substrate are clarified, and the ATO fine particles having the physical characteristics thereof are manufactured. The ATO fine particles having such physical characteristics that a size of a crystallite constituting the ATO fine particles is 4 to 125 nm, and that a specific surface area of the fine particles of 5 to 110 m2/g can exhibit the above-described optical properties, and an example of a method for manufacturing thereof is to parallel-drop an antimony chloride alcoholic solution and an ammonium hydrogen carbonate aqueous solution in a tin chloride aqueous solution, thoroughly wash generated precipitates, dry and calcinate them in an atmosphere, thereby the ATO fine particles are manufactured. | ||||||
| 109 | Composition for forming a transparent conducting film, solution for forming a transparent conducting film and method of forming a transparent conducting film | US10602906 | 2003-06-24 | US20040211941A1 | 2004-10-28 | Takashi Miyoshi |
| The composition of the present invention is one for forming a transparent conducting film, the composition comprising a water-soluble indium compound, a halogen-containing water-soluble organotin compound and a water-soluble organic high molecular compound. A method for forming a transparent conducting film according to the invention comprises the steps of i) applying to a substrate a solution for forming a transparent conducting film containing the composition in water or a solvent comprising water and an organic solvent, and ii) firing the coating film. This method may further include iii) the step of subjecting the film obtained in the firing step ii) to a reducing heat treatment. | ||||||
| 110 | Nanoparticles having a rutile-like crystalline phase and method of preparing same | US09990604 | 2001-11-21 | US20030165680A1 | 2003-09-04 | John T. Brady; David S. Arney; Robert W. Ferguson; James A. Higgins; Charles J. Studiner IV |
| Nanometer-sized particles comprise a mixed oxide of titanium and antimony and are characterized by rutile-like crystal phases. The particles are easily prepared by hydrothemal processing, and may be used as colloids, or in various compositions and articles. | ||||||
| 111 | Electro-conductive oxide particle and process for its production | US09988560 | 2001-11-20 | US06537667B2 | 2003-03-25 | Yoshitane Watanabe; Tadayuki Isaji; Osamu Fujimoto |
| An electro-conductive oxide particle comprising indium atoms, antimony atoms and oxygen atoms in a molar ratio of Sb/In of from 0.03 to 0.08, having a primary particle diameter of from 2 to 300 nm, and having a crystal structure of indium oxide. | ||||||
| 112 | Transparent conductive double oxide and method for producing same | US784327 | 1997-01-16 | US5736071A | 1998-04-07 | Keiji Sato |
| The invention relates to a double oxide which is transparent and electrically conductive. This double oxide has a defective fluorite crystal structure and is represented by a formula of In.sub.3 Sb.sub.1-X O.sub.7-.delta. where X is in a range of from about -0.2 to about 0.2, and .delta. is in a range of from about -0.5 to about 0.5. The double oxide is good in electric conductivity and high in visible light transmittance, in particular in short wavelength region of visible light, as compared with conventional oxide materials. | ||||||
| 113 | Aqueous sol of crystalline tin oxide solid solution containing antimony, and production thereof | US23504 | 1987-03-09 | US4775412A | 1988-10-04 | Hiroshi Nishikura; Shin Yamamoto; Yukio Terao |
| An aqueous sol of a crystalline tin oxide solid solution containing antimony and having a particle size not larger than 300.ANG. is prepared by adding an alkali metal bicarbonate or ammonium bicarbonate to an acidic aqueous solution containing a compound of tin and a compound of antimony to form a gel; purifying the gel; adding aqueous ammonia to the purified gel to form a slurry; and heating the slurry until a sol is formed. | ||||||
| 114 | Production of purified lead and antimony oxide | US931284 | 1978-08-04 | US4194904A | 1980-03-25 | George S. Foerster; Harold A. Stuhler |
| Purified lead and antimony oxide are produced from antimonial lead alloys by oxidation of the molten alloy to form purified metallic lead and a slag of lead oxides and antimony oxides, separation of the metal and slag, and subsequent partial reduction and fuming of the slag to produce pure antimony oxide. | ||||||
| 115 | Extraction of antimony from antimony sulfides bearing solids | US780736 | 1977-03-24 | US4096232A | 1978-06-20 | John William Vogt |
| A method for extracting antimony from solids containing antimony sulfides is described. An improvement in the method of extracting antimony by oxidation of an aqueous mixture of the solids in an acid or by oxidation of a leaching liquor obtained by leaching the antimony from the solids with an aqueous basic solution comprises conducting the oxidation in the presence of a catalyst comprising a water-soluble copper salt, a quinone, a hydroquinone or mixtures of one or more of these. The catalyst significantly increases the rate of oxidation and the rate of the recovery of the antimony from antimony sulfide bearing solids, particularly natural ores. Where the oxidation is conducted in a basic solution, the antimony is recovered as pentavalent antimony in the form of metal antimonates. Facile reduction of the metal antimonate to antimony trioxide also is described. | ||||||
| 116 | Modified zirconium phosphates | US494579 | 1974-08-05 | US4059679A | 1977-11-22 | Abraham Clearfield |
| A process for modifying various inorganic compounds defined by the formula:M(OH).sub.z (HQO.sub.4).sub.2 -z/2 . xH.sub.2 Owherein M is a metal ion selected from Groups IVA and IVB of the Periodic Table of Elements, Q is an anion selected from Groups VA and VIB of the Periodic Table of Elements, z is any value from 0 to 2 and x is a number of from 0 to 8, by replacing a hydrogen in the inorganic compound with a metal cation. Suitable cations include those elements selected from Groups IA, IIA, IIIA, IVA, IB, IIB, IIIB including the lanthanide and activide series, IVB, VB, VIB, VIIB and VIII of the Periodic Table of Elements and ammonium. Thereafter, elevation of the temperature causes modification of the crystalline structure of the exchanged compound and provides various novel crystalline phases. Substitution of dissimilar metal cations for those present in the heat modified structure, with or without subsequent washing with acid, or washing out of the original metal cations, creates still other crystalline phases. | ||||||
| 117 | Flame retardant antimony compositions | US3657179D | 1970-11-30 | US3657179A | 1972-04-18 | YATES PAUL C |
| SOLUTIONS OF PENTAVALENT ANTIMONY-ALPHA-HYDROXY CARBOXYLIX ACID COMPOUNDS OR OF HYDROUS PENTAVALENT ANTIMONY SOLS STABILIZED WITH AN ALPH-HYDROXY CARBOXYLIC ACID IN POLAR ORGANIC SOLVENTS SUITABLE FOR SPINNING OR CASTING ORGANIC POLYMERS ARE USEFUL FOR DISPERSING FLAME-RETARDING PENTAVALENT ANTIMONY COMPOUNDS IN POLYMERIC STRUCTURES.
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| 118 | Process for the recovery of antimony and uranium catalyst metals | US3489788D | 1967-01-25 | US3489788A | 1970-01-13 | CLARK RONALD D; MILBERGER ERNEST C |
| 119 | Furnace | US73689434 | 1934-07-25 | US2063579A | 1936-12-08 | BETTERTON JESSE O |
| 120 | Process of separating antimony and lead | US51465821 | 1921-11-12 | US1535743A | 1925-04-28 | STANNARD BURT C; HAFFEY CALVIN W |
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