子分类：
| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 81 | Low visibility laser marking additive | US10976777 | 2004-11-01 | US07187396B2 | 2007-03-06 | James B. Carroll, Jr.; Steven A. Jones |
| Laser marking of plastic material is achieved by incorporating into the plastic a laser marking particulate additive having a particle size of less than 100 nm. A mixed oxide particle of tin and antimony having a particle size of 10–70 nm is useful as a laser marking additive when using a YAG laser. A metallic powder can further be added to improve marking contrast. | ||||||
| 82 | Composition for forming a transparent conducting film, solution for forming a transparent conducting film and method of forming a transparent conducting film | US10602906 | 2003-06-24 | US07147805B2 | 2006-12-12 | Takashi Miyoshi |
| The composition of the present invention is one for forming a transparent conducting film, the composition comprising a water-soluble indium compound, a halogen-containing water-soluble organotin compound and a water-soluble organic high molecular compound. A method for forming a transparent conducting film according to the invention comprises the steps of i) applying to a substrate a solution for forming a transparent conducting film containing the composition in water or a solvent comprising water and an organic solvent, and ii) firing the coating film. This method may further include iii) the step of subjecting the film obtained in the firing step ii) to a reducing heat treatment. | ||||||
| 83 | Process for producing modified stannic oxide sol and stannic oxide/zirconium oxide composite sol | US11266344 | 2005-11-04 | US20060116429A1 | 2006-06-01 | Yoshinari Koyama; Motoko Asada |
| To provide a process for producing a stable modified sol to be used for a component of a hard coat agent to be applied to the surface of plastic lenses or for other applications. It is a sol containing modified metal oxide particles which have a particle size of from 4.5 to 60 nm and which comprise, as nuclei, colloidal particles (A) having a particle size of from 4 to 50 nm and comprising stannic oxide particles or composite particles of stannic oxide particles and zirconium oxide particles in a weight ratio of ZrO2:SnO2 being from 0:1 to 0.50:1, and, as applied on their surface, an alkylamine-containing Sb2O5 colloidal particles (B1), or composite colloidal particles (B2) of diantimony pentoxide and silicon dioxide, or tungsten oxide/stannic oxide/silicon dioxide composite colloid (B3), wherein the weight ratio of (B)/(A) is from 0.01 to 0.50 on the basis of the weight ratio of their metal oxides. | ||||||
| 84 | Agglomerated nanoparticles having a rutile-like crystalline phase | US10915308 | 2004-08-10 | US20050063897A1 | 2005-03-24 | John Brady; David Arney |
| Agglomerated nanoparticles including Ti/Sb mixed oxide nanoparticles having a rutile-like crystalline phase. | ||||||
| 85 | Additive for YAG laser marking | US09833355 | 2001-04-12 | US06693657B2 | 2004-02-17 | James B. Carroll, Jr.; Steven A. Jones |
| A calcined powder of co-precipitated mixed oxides of tin and antimony is used as a YAG laser marking additive. The additive is designed to impart little to no color to the plastic in which it is incorporated but to provide a high contrast dark marking after being exposed to a YAG laser. | ||||||
| 86 | Additive for YAG laser marking | US09833355 | 2001-04-12 | US20020171732A1 | 2002-11-21 | James B. Carroll JR.; Steven A. Jones |
| A calcined powder of co-precipitated mixed oxides of tin and antimony is used as a YAG laser marking additive. | ||||||
| 87 | Method for preparing particles of metal oxide (tin oxide) | US211310 | 1994-03-23 | US5494652A | 1996-02-27 | Jean C. Robert |
| A fine metal oxide powder is prepared by a method comprising the steps of (1) preparing a hydroxide precursor of a metal oxide, (2) mixing the precursor with an inorganic compound having a melting point lower than the crystallization temperature of the metal oxide, and (3) subjecting the resulting mixture to a high temperature thermal treatment to form the fine metal oxide powder. | ||||||
| 88 | Recovery of precious metals | US558469 | 1983-12-06 | US4537628A | 1985-08-27 | Vaikuntam I. Lakshmanan; Jurgen K. Biskupski |
| The extent of recovery of precious metals, preferably gold and silver, from precious metal ores, concentrates, tailings and wastes which are also sulphide- and arsenic- and/or antimony-bearing, is enhanced by treatment with Caro's acid (H.sub.2 SO.sub.5). | ||||||
| 89 | Detoxification of spent antimony halide catalyst and recovery of antimony values | US372996 | 1982-04-29 | US4411874A | 1983-10-25 | Sung K. Lee |
| A method for detoxification of spent catalyst from a fluorination process includes the step of hydrolyzing such spent catalyst in the presence of aqueous calcium chloride to produce insoluble compounds which are separable from the aqueous medium. The spent catalyst is one which includes at least one antimony halide, such as SbCl.sub.5, SbF.sub.5, SbCl.sub.3 and/or SbF.sub.3, usually with some halogenated hydrocarbons, such as partially chlorinated methane, partially chlorinated ethane and/or chlorofluorocarbons of 1 to 5 carbon atoms, often in the presence of arsenic compounds, such as AsCl.sub.3, hydrofluoric acid, and antimony chlorofluoride, such as SbCl.sub.4 F. The spent catalyst may be directly treated with the aqueous calcium chloride solution, very preferably with such solution containing small amounts of a transition metal ion, such as Fe.sup.++ or Fe.sup.+++, or aluminum ion, e.g., Al.sup.+++, after which volatile gases emitted are treated, an organic liquid phase is separated from an aqueous liquid phase containing dispersed precipitated insoluble compounds of antimony and arsenic (when arsenic is present), such as calcium salts of acids thereof, oxides, hydroxides and/or oxyhalides thereof resulting from the hydrolysis reaction, such insolubles are separated from the aqueous liquid medium, as by filtration, and the filtrate is neutralized with lime. The neutralized filtrate, containing calcium chloride resulting from the neutralization reaction, may be returned to the hydrolysis step and/or may be further treated by a sulfide or hydrosulfide and a water soluble iron salt, such as aqueous solutions of sodium sulfide or sodium hydrosulfide, and ferric chloride, to co-precipitate compounds of antimony and arsenic, which may be removed from the aqueous medium, together with precipitated compounds of heavy metals which may be present, after which the filtrate may be discharged to a sewer after suitable monitoring to ensure that the contents of toxic materials are within permissible ranges for such discharge. The antimony compounds removed during the process may be recovered and converted to useful form, as for reuse as fluorination catalysts, and other removed materials may also be recovered, regenerated and/or reused. | ||||||
| 90 | Method of preparing colloidal sol of pentavalent antimony | US135046 | 1980-03-28 | US4341655A | 1982-07-27 | John G. Richardson |
| A method of preparing colloidal sols of pentavalent antimony containing increased amounts of metal is described. More particularly, a method of converting substantially water-insoluble metal antimonates to colloidal sols of pentavalent antimony is described. The method comprises mixing a substantially water-insoluble metal antimonate with a pentavalent antimony sol and agitating the mixture for a period of time sufficient to convert at least a portion of the crystalline metal antimonate to the colloidal state. The colloidal sols obtained in the described manner contain an increased amount of the metal, and such sols are useful as flame-retardants. | ||||||
| 91 | Liquid source material container and method of use for semiconductor device manufacturing | US746923 | 1976-12-02 | US4134514A | 1979-01-16 | John C. Schumacher; Andre Lagendijk |
| The gas inlet tube and the outlet tube in the upper end of a "bubbler" container are each sealed with an easily breakable wall adjacent the wall where the tubes join the container. A second seal is formed on the outer ends of the tubes creating a compartment in which may be positioned a small hammer. The outer seals are sufficient to meet safety regulations regarding the shipment of highly corrosive or poisonous materials. The user of the material, breaks the outer seals, positions the hammer if not already in place, makes the desired connections to the tubes, applies a purging gas to the upper ends of the tubes, and breaks the inner seals by magnetically or otherwise actuating the hammer resting on the inner seal, thereby connecting the material to the desired system without exposing the material to the atmosphere. | ||||||
| 92 | Process of producing monocrystalline layers of indium antimonide | US32747163 | 1963-12-02 | US3357852A | 1967-12-12 | GUNTHER ZIEGLER |
| 93 | P-type oxide, composition for producing p-type oxide, method for producing p-type oxide, semiconductor element, display element, image display device, and system | US14360791 | 2012-11-28 | US09536957B2 | 2017-01-03 | Yukiko Abe; Naoyuki Ueda; Yuki Nakamura; Mikiko Takada; Shinji Matsumoto; Yuji Sone; Ryoichi Saotome |
| To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous. | ||||||
| 94 | Nanocrystals including a group IIIA element and a group VA element, method, composition, device and other products | US14853388 | 2015-09-14 | US09534173B2 | 2017-01-03 | Christopher R. Clough; Craig Breen; Jonathan S. Steckel; Ebenezer Selwyn Arun Thamban |
| A nanocrystal comprising a semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal including a core comprising a first semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material disposed on at least a portion of the nanocrystal core, wherein the semiconductor material comprises at least three chemical elements and is obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. A population of nanocrystals, method for preparing nanocrystals, compositions, and devices including nanocrystals are also disclosed. | ||||||
| 95 | Nanocrystals including a group IIIA element and a group VA element, method, composition, device and other products | US13740379 | 2013-01-14 | US09136428B2 | 2015-09-15 | Christopher R. Clough; Craig Breen; Jonathan S. Steckel; Ebenezer Selwyn Arun Thamban |
| A population of nanocrystals including a core comprising a first semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material comprising at least three chemical elements and obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. Devices including nanocrystals are disclosed. | ||||||
| 96 | NANOMETRIC TIN-CONTAINING METAL OXIDE PARTICLE AND DISPERSION, AND PREPARATION METHOD AND APPLICATION THEREOF | US14388697 | 2013-03-27 | US20150160379A1 | 2015-06-11 | Zhigang Shen; Wei Kian Soh; Jiyao Zhang; Aici Wang; Jie Zhong; Sung Lai Jimmy Yun; Hock Sing Sher; Jianfeng Chen |
| There is disclosed a tin-containing metal oxide nanoparticle, which has an index of dispersion degree less than 7 and a narrow particle size distribution which is defined as steepness ratio less than 3. There is disclosed dispersion, paint, shielding film and their glass products which comprise the said nanoparticles. Besides, there are also disclosed processes of making the tin-containing metal oxide nanoparticle and their dispersion. The tin-containing metal oxide nanoparticles and their dispersion disclosed herein may be applied on the window glass of houses, buildings, vehicles, ships, etc. There is provided an excellent function of infrared blocking with highly transparent, and to achieve sunlight controlling and thermal radiation controlling. | ||||||
| 97 | ANTIMONY-DOPED TIN OXIDE, INFRARED-RAY-ABSORBABLE PIGMENT, INFRARED-RAY-ABSORBABLE INK, PRINTED MATTER, AND METHOD FOR PRODUCING ANTIMONY-DOPED TIN OXIDE | US14400084 | 2013-05-10 | US20150118458A1 | 2015-04-30 | Fumihito Kobayashi; Wataru Yoshizumi; Hiroaki Shimane; Shota Kawasaki; Atsushi Yamada |
| An antimony-doped tin oxide which comprises tin oxide and antimony oxide and fulfills the following requirement (a) and/or (b): (a) the half-width value (Δ2θ) around 2θ=27° as determined by an X-ray diffraction measurement is 0.35 or less; and/or (b) the content of antimony oxide is 0.5 to 10.0 wt % relative to the weight of the antimony-doped tin oxide and the crystallinity, which is a value determined by dividing a peak value of a peak appearing around 2θ=27° as determined by an X-ray diffraction measurement by the half-width (Δ2θ), is 18092 or more. | ||||||
| 98 | Formation of Nanoparticles of Antimonides Starting from Antimony Trihydride as a Source of Antimony | US14382103 | 2013-02-22 | US20150053897A1 | 2015-02-26 | Axel Maurice; Bérangère Hyot; Peter Reiss |
| The present invention relates to a process for preparing nanoparticles of antimonides of metal element(s) in the form of a colloidal solution, using antimony trihydride (SbH3) as a source of antimony. | ||||||
| 99 | Infrared ray cut-off material, dispersion of infrared ray cut-off material, infrared ray cut-off film-forming composition, and infrared ray cut-off film | US13978982 | 2013-01-11 | US08927067B2 | 2015-01-06 | Motohiko Yoshizumi; Akira Nakabayashi |
| An infrared ray cut-off material is formed of phosphorus-doped antimony tin oxide powder, in which a content of antimony in terms of SbO2 is not less than 14 parts by mass and not more than 30 parts by mass with respect to 100 parts by mass of the infrared ray cut-off material, a content of phosphorus in terms of PO2.5 is not less than 1 part by mass and not more than 25 parts by mass with respect to 100 parts by mass of the infrared ray cut-off material, and a balance other than antinomy oxide and phosphorus oxide is tin oxide. | ||||||
| 100 | INFRARED RAY CUT-OFF MATERIAL, DISPERSION OF INFRARED RAY CUT-OFF MATERIAL, INFRARED RAY CUT-OFF FILM-FORMING COMPOSITION, AND INFRARED RAY CUT-OFF FILM | US13978982 | 2013-01-11 | US20140320954A1 | 2014-10-30 | Motohiko Yoshizumi; Akira Nakabayashi |
| An infrared ray cut-off material is formed of phosphorus-doped antimony tin oxide powder, in which a content of antimony in terms of SbO2 is not less than 14 parts by mass and not more than 30 parts by mass with respect to 100 parts by mass of the infrared ray cut-off material, a content of phosphorus in terms of PO2.5 is not less than 1 part by mass and not more than 25 parts by mass with respect to 100 parts by mass of the infrared ray cut-off material, and a balance other than antinomy oxide and phosphorus oxide is tin oxide. | ||||||
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