子分类：
| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 221 | 안티몬 도프 산화 주석 분말 및 그 제조 방법 | KR1020147026903 | 2013-03-28 | KR101568629B1 | 2015-11-11 | 시라이시신야; 우메다히로토시; 사사키스즈오 |
| 이안티몬도프산화주석분말은, (A) Sn, Sn, Sb및 Sb로이루어지는군에서선택되는적어도 3 종을함유하고, (B) Sn의이온반경과 Sn의이온반경의평균인 Sn 평균이온반경과, Sb의이온반경과 Sb의이온반경의평균인 Sb 평균이온반경이, 식 : Sn 평균이온반경 : Sb 평균이온반경 = 1 : (0.96 ∼ 1.04) 로나타내어지고, 또한 (C) Sb 와 Sn 의합계 100 몰에대해, Sb 가 5 ∼ 25 몰인것을특징으로하는안티몬도프산화주석분말이다. | ||||||
| 222 | ｐ형 산화물, ｐ형 산화물 제조용 조성물, ｐ형 산화물의 제조 방법, 반도체 소자, 표시 소자, 영상 표시 장치, 및 시스템 | KR1020147017429 | 2012-11-28 | KR1020140095106A | 2014-07-31 | 아베유키코; 우에다나오유키; 나카무라유키; 다카다미키코; 마츠모토신지; 소네유지; 사오토메료이치 |
| 본 발명에서는, 산화물을 포함하고 무정형인 p형 산화물로서, 산화물은 Cu, 및 p 블록 원소로부터 선택되고, 이온으로서 존재할 때 평형 상태로 존재할 수 있는 원소 M을 포함하고, 여기서 평형 상태는 최외각의 p 궤도의 모든 전자가 상실된 상태와 최외각의 모든 전자가 상실된 상태 둘 모두가 있는 상태인 것인 p형 산화물이 제공된다.
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| 223 | 텔루르 원소층의 나노스케일 조정을 통해 합성한 안티몬텔루라이드 화합물 및 그 제조방법 | KR1020070060403 | 2007-06-20 | KR1020080111886A | 2008-12-24 | 이상엽; 정광호 |
| A manufacturing method of antimony telluride compound synthesized through controlling nanoscale of tellurium atomic layer is provided to reduce or perform easily a high temperature uniform thermal treating process by obtaining a uniform combination state of component and one-way orientation crystal thin film. A manufacturing method of antimony telluride compound synthesized through controlling nanoscale of tellurium atomic layer comprise steps of: depositing a multi-layered thin film after adjusting a thickness of a specific element in a normal temperature state; depositing a multi-layered thin film after adjusting a thickness of a specific element at a stat of maintaining a specific temperature; and being cooled after being heated to a specific normal temperature over specific temperature and maintained at the specific temperature for fixed time. | ||||||
| 224 | 레이저 표시 첨가제를 포함하는 나노미터 크기의 안티몬주석 산화물(ＡＴＯ) 입자 | KR1020067010973 | 2004-11-04 | KR1020060123254A | 2006-12-01 | 캐롤,제임스,비.,주니어.; 존스,스티븐,에이. |
| Laser marking of plastic material is achieved by incorporating into the plastic a laser marking particulate additive having a particle size of less than 100 nm. A mixed oxide particle of tin and antimony having a particle size of 10-70 nm is useful as a laser marking additive when using a YAG laser. A metallic powder can further be added to improve marking contrast. | ||||||
| 225 | 투명 도전막 형성용 조성물, 투명 도전막 형성용 용액 및투명 도전막의 형성 방법 | KR1020030042351 | 2003-06-27 | KR1020040002761A | 2004-01-07 | 미요시,다까시 |
| PURPOSE: Provided are a method which can form a transparent conductive film having high transmissivity by simple application procedure, and composition and solution for forming a transparent conductive film having high transmissivity. CONSTITUTION: The composition contains a water-soluble indium compound, a water-soluble organic tin compound containing halogen, and a water-soluble organic high molecular compound. The method for forming the transparent conductive film comprises the steps of (1) dissolving the composition into solvent of water or solvent consisting of water and organic solvent, to obtain a solution, and then applying the solution on substrate, and (2) baking the applied film. The method further comprises the step of reduction heating the film in the step (2). | ||||||
| 226 | ANODE ACTIVE MATERIAL, PRODUCTION METHOD FOR SAME AND RECHARGEABLE BATTERY COMPRISING SAME | PCT/KR2013007432 | 2013-08-19 | WO2014027869A3 | 2014-04-17 | LEE SANG YOUNG; LEE EUN HO; CHO JU HYUN; PARK JANG HOON; KIM JAE KYU; KIM CHUL HWAN; HONG YOUNG JIN |
| The present invention relates to an anode active material for a lithium rechargeable battery, to a production method for same and to a rechargeable battery comprising same. More specifically, the present invention relates to an anode active material for a lithium rechargeable battery, the material comprising: an anode active material core; and an electrically-conductive barrier layer formed from any one or more member of the group consisting of antimony zinc oxide, antimony tin oxide or a combination thereof formed on the anode active material core, and relates to a production method for same and to a rechargeable battery comprising same. A feature of the anode active material for a lithium rechargeable battery according to the present invention is that the electrically-conductive barrier layer has pores linking through to the anode active material core from the anode active material surface. | ||||||
| 227 | NANOCRYSTALS INCLUDING A GROUP IIIA ELEMENT AND A GROUP VA ELEMENT, METHOD, COMPOSITION, DEVICE AND OTHER PRODCUCTS | PCT/US2007024320 | 2007-11-21 | WO2008133660A3 | 2009-04-02 | CLOUGH CHRISTOPHER R; BREEN CRAIG; THAMBAN ARUN; STECKEL JONATHAN S |
| A nanocrystal comprising a semiconductor material comprising one or more elements of Group IMA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material disposed on at least a portion of the nanocrystal core, wherein the semiconductor material comprises at least three chemical elements and is obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. Populations of nanocrystals, method for preparing nanocrystals, compositions, and devices including nanocrystals are also disclosed. | ||||||
| 228 | ADDITIVE FOR YAG LASER MARKING | PCT/US0210408 | 2002-04-01 | WO02083567A3 | 2003-02-20 | CARROLL JAMES B JR; JONES STEVEN A |
| A calcined powder of co-precipitated mixed oxides of tin and antimony is used as a YAG laser marking additive. | ||||||
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