| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 141 | 탄산염화 인회석-흑연층 복합 나노와이어 및 그 합성방법 | KR1020130125171 | 2013-10-21 | KR101473244B1 | 2014-12-16 | 정남조; 김찬수; 좌은진; 황교식; 김동국; 박종수 |
| 본 발명은 탄산염화 인회석-흑연층 복합 나노와이어 및 그 합성방법에 관한 것으로서, 상세하게는 본 발명은 매우 간단한 공정을 통해 탄산염화 인회석 표면에 결정성 흑연층을 형성시킴으로써 바이오 적합성뿐만 아니라 기계적 특성이 매우 향상된 복합 나노구조체를 대량으로 합성할 수 있는 방법에 대한 것이다. 특히 본 발명은 탄산칼슘 그 자체뿐만 아니라 달걀껍질과 같이 탄산칼슘이 포함된 다양한 물질들의 활용가능성을 확인하여 고부가가치 탄산염화 인회석-흑연층 복합 나노와이어를 대량으로 생산할 수 있는 기술을 제공한다.
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| 142 | 나노스피어 어레이 제조 장치 및 이를 이용한 나노스피어 어레이 제조 방법 | KR1020130146831 | 2013-11-29 | KR101462357B1 | 2014-11-19 | 고기영; 안진호; 김기강; 박철균 |
| 나노스피어 어레이 제조 장치가 제공된다. 상기 나노스피어 어레이 제조 장치는, 지면에 대해서 기울어진 바닥면을 갖는 반응조, 나노스피어를 공급하는 주입 펌프, 및 상기 반응조의 상기 바닥면에 대해서 기울어지도록 상기 반응조의 제1 측벽 상에 배치되고, 상기 주입 펌프에서 공급되는 상기 나노스피어를 상기 반응조 내로 가이드(guide)하는 가이드 기판을 포함한다.
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| 143 | 나노채널이 형성된 나노구조체의 제조방법 | KR1020130090347 | 2013-07-30 | KR101454313B1 | 2014-10-28 | 윤재성; 유영은; 최두선; 김정환; 장성환 |
| The present invention relates to a method for manufacturing a nanostructure having a nano-channel. The method for manufacturing a nanostructure having a nano-channel according to the present invention is characterized by comprising: a first injection step of injecting a solution to fill in the inside of a micro-tube; a second injection step of forming a nano-channel by injecting a fluid which does not chemically react with the solution to penetrate the center part of the solution; and a removing step of removing the fluid. Therefore, provided is a method for manufacturing a nanostructure having a nano-channel, which can form a nano-channel with a simple process of injecting and curing a solution, which does not need an additional surface treatment, and which easily provides chemical, electrical, and physical functions of a nano-channel according to components of the solution. | ||||||
| 144 | 나노입자들 또는 서브마이크론 입자들로 이루어진 액체 분산물의 제어된 진공 동결 건조 수단들에 의한 라멜라 나노구조들의 제조 방법 | KR1020147006710 | 2012-08-29 | KR1020140124746A | 2014-10-27 | 드보르스키,리차드 |
| 본 발명은 나노입자들로 이루어진 액체 분산물의 제어되는 진공 동결 건조에 기반하여 다양한 밀도의 미소섬유의 및 라멜라 다공성 마이크로구조들 및 나노구조들의 제조 방법에 관한 것이다. 최종 생산물의 요구되는 밀도 및 구조에 따라, 분산물의 입자 농도가 미세하게, 주로 미소섬유의 구조들의 형성을 위한 매우 낮은 값들로부터, 단위 체적내 표면 영역의 높은 값들을 가지는 고 다공성 물질들의 형성을 위한 매우 높은 값들까지 조절된다. 액체 분산물의 입자들은 단단히 폐쇄된 체적안에서 고체 상태로 빠르게 동결된다. 분자들의 최종 제거까지, 이 형상에서 액체 분산물은 액체형 분산매의 분자들의 요구되는 승화율로 진공 동결 건조에 제공되고, 단위 체적내 표면 영역의 높은 값 및 분산물내 입자들의 처음 농도에 비례하는 밀도로 미소섬유의 및/또는 라멜라 다공성 마이크로구조들 및 나노구조들의 창설에 수반된다. 승화 인터페이스의 주 표면의 법선 벡터의 방위는 최종 승화 구조의 요구되는 특성들에 대하여 수직에 상방으로부터 수직에 하방까지 설정될 수 있다. 승화율은 동결 물질의 승화 인터페이스의 외부 가열 및 진공 깊이의 조합에 의해 조절된다.
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| 145 | 광유체화를 이용하여 마이크로 패턴 상에 나노구조체를 제조하는 방법, 이에 의하여 제조된 나노구조체 및 그 응용 | KR1020130075912 | 2013-06-28 | KR101447085B1 | 2014-10-06 | 박정기; 강홍석; 이승우; 이솔아 |
| The present invention provides a method of manufacturing a nanostructure on a micro-pattern by using photofluidization, the method including: forming a three-dimensional micro-pattern made of a polymer having a directional photofluidization property on a transparent substrate; and irradiating the formed three-dimensional micro-pattern with light and photofluidizing the polymer to form a nanostructure, in which a region or a pattern of a nanostructure manufactured on the three-dimensional polymer pattern are controlled according to types of light, irradiation direction or irradiation angle irradiated thereon. According to the present invention, since a nanostructure can be selectively recorded / deleted on a surface of micro-pattern having a different height by using directional photofluidization phenomenon, multiple plasmonic properties can be integrated in one place to contribute to practical use of a regularly arranged plasmonic color filter / display. | ||||||
| 146 | 산화그래핀의 환원 방법, 상기 방법으로 얻어진 환원 산화그래핀 및 상기 환원 산화그래핀을 포함하는 박막 트랜지스터 | KR1020130029983 | 2013-03-20 | KR1020140115198A | 2014-09-30 | 임정아; 송용원; 홍재민; 장주영 |
| The present invention relates to a preparing method of a reduced graphene oxide pattern, comprising a step for forming a graphene oxide pattern on a substrate and a step for reducing the graphene oxide by supplying white light pulse to the graphene oxide pattern; to a reduced graphene oxide gained by the method; and to an electronic device and a thin film transistor including the reduced graphene oxide. | ||||||
| 147 | 양자점 함유 나노복합입자 및 그 제조방법 | KR1020130028431 | 2013-03-18 | KR1020140114922A | 2014-09-30 | 이혁재; 정흥수; 김현수; 김영주 |
| According to an embodiment of the present invention, provided are nanocomposite particles containing a quantum dot. The particles include a hollow core particle; and at least one quantum dot nanoparticle which binds to a surface of the hollow core particle. Also, according to an embodiment of the present invention, provided is a method of preparing nanocomposite particles containing a quantum dot. The method comprises: forming a hollow core particle; and binding at least one quantum dot nanoparticle to the hollow core particle in a hydrophilic organic solvent by using covalent bond, ionic bond, or physical absorption. | ||||||
| 148 | 그래핀의 제조 방법 | KR1020130025846 | 2013-03-11 | KR1020140111548A | 2014-09-19 | 손인혁; 이승재 |
| Provided is a method for manufacturing graphene with much higher yield at much lower temperature, as a method for manufacturing graphene comprising a step for providing gas including CO_2, CH_4, and H_2O on a metal catalyst for growing graphene. | ||||||
| 149 | 유성형볼밀방법과 열용매방법을 혼합한 나노결정 제조장치 | KR1020130123108 | 2013-10-16 | KR101439323B1 | 2014-09-12 | 양현경; 양승철; 최지연; 김동국; 정남조; 김찬수; 김한기; 좌은진 |
| The present invention relates to a method of manufacturing a nano crystal by using a ball milling and a solvothermal method at the same time and installing a heater in a planetary ball mill apparatus to increase a pressure inside a vessel, and the planetary ball mill apparatus including: a base; a heating bath installed onto the base and having a space therein, and provided therein with a heating mean; a rotating plate installed on the base inside the heating bath; and a milling vessel installed on the rotating plate to rotate according to a rotation of the rotating plate, having a space therein and being able to rotate with respect to the rotating plate, in which a raw sample, a milling ball, and a solvent are loaded in the milling vessel. Accordingly, the present invention may control pressure by controlling temperature and may manufacture a nano crystal without a post heat treatment. | ||||||
| 150 | 탄소 코팅 리튬 인산철 나노분말 제조방법 | KR1020140002576 | 2014-01-08 | KR1020140090955A | 2014-07-18 | 전인국; 조승범; 오명환; 장욱 |
| The present invention relates to a manufacturing method for lithium iron phosphate nanopowder coated with carbon and to lithium iron phosphate nanopowder manufactured by the same. The manufacturing method for lithium iron phosphate nanopowder coated with carbon comprises as follows: (a) a step of manufacturing a mixed solution by putting a lithium precursor, an iron precursor, and a phosphorus precursor into a glycerol solvent; (b) a step of manufacturing amorphous lithium iron phosphate nanoseeds by putting the mixed solution into a reactor for reaction; and (c) a step of manufacturing lithium iron phosphate nanopowder where the surface of particles is partly or fully coated with carbon by conducting heat treatment on the manufactured lithium iron phosphate nanoseeds. The manufacturing method can manufacture lithium iron phosphate nanopowder in a short time where a carbon coating layer is formed on particles thereof by controlling the size of the particles and size distribution only with two simple processes. In addition, a lithium secondary battery which includes the manufactured carbon coated lithium iron phosphate nanopowder as a cathode active material has an excellent capacity and stability. | ||||||
| 151 | 나노와이어 제조 방법 | KR1020120147568 | 2012-12-17 | KR1020140078319A | 2014-06-25 | 이철로; 김민희 |
| A manufacturing method of nanowires according to the present invention comprises (a) a step of forming a catalyst metal layer on a substrate; (b) a step of forming a gallium layer on the catalyst metal layer; (c) a step of forming alloy droplets containing the catalyst metal and gallium by heat-processing the catalyst metal layer and the gallium layer; (d) a step of forming GaN seeds at a first temperature condition while supplying a precursor of gallium and a precursor of nitrogen to the alloy droplets; and (e) a step of growing GaN nanowires at a second temperature condition higher than the first temperature while supplying a precursor of gallium and a precursor of nitrogen to the GaN seeds. According to the present invention, nanowires grown to have a sufficient length are able to be obtained without a coagulation phenomenon on the substrate. | ||||||
| 152 | 조절 가능한 코어-위성 나노입자 조립체 제조 방법 | KR1020120143476 | 2012-12-11 | KR101401700B1 | 2014-05-30 | 윤상운; 윤준희; 임종휘 |
| The present invention relates to a method of manufacturing core-satellite nanoparticle assembly having an asymmetrical shape comprising: a step of fixing core metal nanoparticles on a substrate; a step of introducing alkanedithiol on the surface of the fixed core metal nanoparticles; a step of manufacturing a core-satellite nanoparticle assembly by combining at least one satellite metal nanoparticle to a thiol group exposed to the surface of the core metal nanoparticles; and a step of separating the core-satellite nanoparticle assembly from the substrate by irradiating ultrasonic waves to the substrate. The method of manufacturing core-satellite nanoparticle assembly of the present invention is able to manufacture a core-satellite nanoparticle assembly in which optical properties are adjusted according to the intention of a manufacturer by a simple process. | ||||||
| 153 | 광 유도 양이온 치환반응을 이용한 칼코제나이드 나노입자의 제조방법 | KR1020120149441 | 2012-12-20 | KR101400517B1 | 2014-05-30 | 박정희; 김창현; 김한성; 명윤; 조용재; 정찬수; 임영록; 장동명; 임형순 |
| The present invention relates to a method for manufacturing chalcogenide nanoparticles and chalcogenide nanoparticles. The method for manufacturing chalcogenide nanoparticles according to an embodiment of the present invention injects the optical energy of a band gap or more of a reactant by applying a solubility difference based on the thermodynamic theory of the chalcogenide of a water phase; is able to manufacture chalcogenide nanoparticles in large quantities in a short period by inducing the acceleration of the cation substitution reaction of the chalcogenide nanoparticles; and induces cation substitution reaction by putting metal salts including M_(2) (the M_(2) is a metal cation) into a M_(1)X (The M_(1) is a metal cation, and X is S, Se or SSe.) solution and irradiating a light source. | ||||||
| 154 | 라인 빔 레이저를 이용한 나노입자 합성장치 | KR1020130011679 | 2013-02-01 | KR101400836B1 | 2014-05-29 | 이정철; 김성범; 김준수; 송희은; 송진수 |
| A nanoparticle synthesizing apparatus using a line beam laser of the present invention irradiates laser to an inner space of a reaction chamber (20) in a line beam form in which a cross section is a line in order not to be equal to the propagation direction of a reaction gas introduced to the inner space and contains a laser generating device (10) generating line beam at the outside of the reaction chamber (20), thereby being able to use the energy of the laser synthesizing nanoparticles for producing nanoparticles in a scheduled method by being controlled in the inner space of the reaction chamber (20). Especially, the nanoparticle synthesizing apparatus prevents the generation of reaction gas incapable of reacting with a laser through a line beam, thereby greatly improving mass production technology efficiency of nanoparticles. | ||||||
| 155 | 나노입자 제조 장치 | KR1020130036855 | 2013-04-04 | KR101395653B1 | 2014-05-16 | 장보윤; 김준수; 이진석 |
| The present invention relates to a device for manufacturing nanoparticles, wherein the device generates temperature variation at a certain interval in a reaction tank with ICP (Inductive Coupled Plasma) which converts internal gas by a chemical induction reaction, intensively collects nanoparticles at a certain interval by discharging high kinetic energy remaining in nanoparticles manufactured in the reaction tank. The device prevents a particle aggregation phenomenon and a particle increase phenomenon due to the increase of rapid cooling of particles by installing a cooling device in contact with a collection unit and improves collection efficiency by moving rapidly cooled nanoparticles to a collection mesh by gas flow by forming the collection unit in a conical form. | ||||||
| 156 | 탄소나노튜브를 이용한 금속 나노와이어 및 그 제조방법 | KR1020130124427 | 2013-10-18 | KR1020130124260A | 2013-11-13 | 강성준; 김한기 |
| The present invention relates to metal nanowires using carbon nanotubes which can be easily manufactured through a low-temperature process by using nanotubes and can control the properties and a method for manufacturing metal nanowires. A method for manufacturing metal nanowires comprises: a step of preparing carbon nanotubes; a step of immersing the carbon nanotubes together with metal materials containing metal to be coated in an electrolyte solution containing metal ions; and a step of supplying direct current power for the precipitation of metal contained in the electrolyte solution on an external periphery of the carbon nanotubes after the carbon nanotubes are connected to a negative electrode and the metal materials are connected to the positive electrode. The present invention electroplates carbon nanotubes with a metal layer by arranging carbon nanotubes having conductivity as a base, thereby easily manufacturing the metal nanowires of a large area in a low-temperature process. | ||||||
| 157 | 반도체성 탄소나노튜브 3차원 네트워크의 제조 방법 | KR1020110072994 | 2011-07-22 | KR1020120130668A | 2012-12-03 | 이해원; 서정은; 여해구 |
| PURPOSE: A manufacturing method of semi-conductive carbon nano-tube 3d networks is provided to selectively remove metallic carbon nano-tube among the carbon nano-tube 3D networks. CONSTITUTION: A manufacturing method of semi-conductive carbon nano-tube 3d networks comprises the following steps: forming silicon pillar on a silicon substrate; dipping the silicon substrate into a metal catalyst solution and absorbing the metal catalyst on the substrate; providing carbon source gas on the substrate in which the catalyst is absorbed and forming carbon nano-tube 3D network between the silicon pillars; and selectively removing the metal carbon nano-tube by gas plasma processing the carbon nano-tube 3D network. The plasma processing is performed at 5-25W and room temperature for 60-90 seconds. The gas used in the plasma processing is hydrogen. | ||||||
| 158 | 나노구조체의 제조방법 및 이를 이용한 전자소자의 제조방법 | KR1020100101901 | 2010-10-19 | KR1020120040462A | 2012-04-27 | 박원일; 이재석 |
| PURPOSE: A manufacturing method of a nano-structure and an electronic device using thereof are provided to easily form a nano-cone by forming micro concave-convex structure on a substrate and form a desired shaped nano-structure at desired position on the substrate using a lithography process. CONSTITUTION: A manufacturing method of a nano-structure comprises the following steps: forming micro concave-convex structure by etching surface of a substrate(100); evaporating metal catalyst(120) on the substrate in which the micro concave-convex structure(110) is formed; and forming a nano cone(130) by using a vapor-liquid-solid(VLS) method on the substrate in which the metallic catalyst is evaporated. A manufacturing method of an electronic device comprises the following steps: forming a p-n junction semiconductor layer by welding a p-type semiconductor layer and a n-type semiconductor layer; forming the micro concave-convex structure by etching at least one surfaces of the p-type semiconductor layer and the n-type semiconductor layer; evaporating a metallic catalyst on the semiconductor layer in which the micro concave-convex structure is formed; forming the nano cone using a vapor-liquid-solid(VLS) method on the semiconductor layer. | ||||||
| 159 | 미세입자의 분리 및 포집장치 | KR1020100043782 | 2010-05-11 | KR1020110124427A | 2011-11-17 | 전충환; 김용균 |
| PURPOSE: An apparatus for separating and trapping fine particles is provided to prevent the destruction of parts due to thermal fatigue and to suck nano/micro particles combusted or emitted at a high temperature without the reduction of speeds. CONSTITUTION: An apparatus for separating and trapping fine particles(1000) includes a vacuum pump, an air inlet(200), an fluid supplying unit(300), a particle separating unit(400), and a particle trapping unit(500). The vacuum pump sucks air containing fine particles. The fluid supplying unit supplies gas or gas and coolant into the inlet. The inlet is composed of at least two tubes. The innermost part of the inlet in contact with induced air is based on a porous tube. The fine particles are prevented from being attached inside the inlet by emitting the gas from the fluid supplying unit through the porous tube. The porous tube is sintered metal tube. | ||||||
| 160 | 고 종횡비 분자 구조를 포함하는 구조물 및 제조 방법 | KR1020117017661 | 2010-01-27 | KR1020110121609A | 2011-11-07 | 브라운데이비드피; 에이치슨브래들리제이; 나시불린앨버트지; 코피넨에스코아이 |
| 본 발명은 고 종횡비 분자 구조들(HARM-구조들)을 포함하는 구조물로서, 이 구조물은 HARM-구조들의 필수적으로 평면인 네트워크(2) 및 네트워크(2)와 접촉하고 있는 지지체(3)를 포함한다. 상기 지지체(3)는 그 안에 개구부(5)를 가지며, 이 개구부(5)의 주변 지역(4)에서, 네트워크(2)가 지지체(3)와 접촉하고 있어서, 네트워크(2)의 중앙 부분은 지지체(3)에 의해 받쳐지지 않는다. 상기 네트워크(2)는 필수적으로 고르지 않게 배향된 HARM-구조들을 포함한다.
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