Provided is a semiconductor transport member that includes a semiconductor mounting member capable of expressing a strong gripping force and unlikely to cause a contaminant to adhere and remain on a semiconductor side. Also provided is a semiconductor mounting member capable of expressing a strong gripping force and unlikely to cause a contaminant to adhere and remain on a semiconductor side. The semiconductor transport member of the present invention includes: a carrying base; and a semiconductor mounting member, in which: the semiconductor mounting member includes a fibrous columnar structure; the fibrous columnar structure includes a fibrous columnar structure including a plurality of fibrous columnar objects; the fibrous columnar objects are each aligned in a direction substantially perpendicular to the carrying base; and a surface of the fibrous columnar structure on an opposite side to the carrying base has a coefficient of static friction against a glass surface of 4.0 or more.

The present invention provides a method of forming a composite article, comprising:

providing a substrate with a surface comprising a set of substantially aligned nanostructures on or in the surface, wherein the long axes of the nanostructures are substantially aligned in an orientation that is substantially non-parallel to the surface; and

treating the substrate with a mechanical tool to change the orientation of the nanostructures such that the long axes of the nanostructures are substantially aligned in an orientation that is parallel to the surface.

The present invention provides a continuous method for growing nanostructures comprising the steps of:

depositing a catalyst material onto the surface of a growth substrate;

exposing a first portion of the growth substrate to a first set of conditions to cause catalytic formation of nanostructures on the surface of the growth substrate;

removing nanostructures from a second portion of the growth substrate; and

while exposing the first portion of the growth substrate to the first set of conditions, treating the second portion of the growth substrate to a second set of conditions to reactivate the catalyst material.

An apparatus for growing nanostructures is also provided.

A functional molecule (10) is constructed of electrodes (5,6), which are formed of pSi (polysilicon) and are opposing each other, and a molecular array structure (7), and the molecular array structure is formed of interface modifier molecules (2), which are covalently coupled to surfaces of the electrodes (5,6) to modify the surfaces, and driver molecules (1) repeatedly stacked in one direction between the interface modifier molecules. The interface modifier molecules each have a nearly discoid skeleton of a π-electron conjugated system and side chains, are arranged with planes of their skeletons lying substantially in parallel to the surfaces of both the electrodes, and are covalently coupled at their side chains to Si atoms in both the electrodes. The driver molecules are of a π-electron conjugated system, and upon application of an electrical field, change in structure or orientation and hence change in dielectric constant, in other words, conductivity. The driver molecules are functional molecules of a complex having a Zn ion approximately at its center. The interface modifier molecules and driver molecules are stacked together by intermolecular π-π stacking, and so the driver molecules themselves.

An aggregate of carbon-based fine structures in which a plurality of carbon-based fine structures are collected, wherein respective carbon-based fine structures are oriented in the same direction. The above aggregate of carbon-based fine structures is an aggregate of a plurality of carbon-based fine structures in a state they are pulled by one another with strong interaction, and has such a length that allows the improvement of the handeability and workability thereof.