| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 41 | 包括热隔离结构的热致动微型电动机械系统 | CN00132934.0 | 2000-11-08 | CN1295178A | 2001-05-16 | 拉马斯瓦米·马哈德万 |
| 一种微型电动机械结构包括微电子基底和微电子基底上间隔开的支撑件。梁在支撑件之间延伸并根据施加在其上的热量而膨胀以导致梁在支撑件之间移位。梁上热量的施加产生从梁通过支撑件并到基底的热传导通路。热传导通路中的热隔离结构包括在梁每端、在每个间隔开的支撑件中、在临近每个间隔开的支撑件的基底中的热隔离结构、和/或梁中的至少一个热隔离结构。其可提高微型电动机械结构的热效率并允许低功率、大偏移、大的力和/或高速度。 | ||||||
| 42 | 微型继电器及其制造方法 | CN97198654.1 | 1997-08-26 | CN1233343A | 1999-10-27 | 坂田稔; 中岛卓哉; 积知范; 藤原照彦; 竹内司 |
| 由单晶制成的薄片状基片21设置有压电元件24,其一个表面设置有可动触点25的可动片20的两端固定和支撑在底座11。然后,通过借助电压元件24使可动片20弯曲,可动触点25与面对可动触点的一对固定触点38和39接触和脱离接触。按此配置,可以获得超小型微型继电器,其具有的机械接触机理在接通其触点时的电阻较小,同时具有期望的抗震性、频率特性和绝缘性能。 | ||||||
| 43 | Micro actuator device | JP2001571436 | 2001-03-16 | JP4880167B2 | 2012-02-22 | ベルント ヴァーグナー，; ハンス ヨアキム クウェンツェル |
| 44 | Micro-switching element and a micro-switching device manufacturing method | JP2007009360 | 2007-01-18 | JP4879760B2 | 2012-02-22 | トエン アン グエン; 直之 三島; 知史 上田; 忠司 中谷; 遊 米澤 |
| 45 | Micro actuators and locking switch | JP2009527424 | 2007-09-07 | JP2010502465A | 2010-01-28 | パルド，フラヴィオ |
| 微小電気機械アクチュエータは、ホットアームに金属を使用し、コールドアームの少なくとも可撓部分にシリコンを使用する。 シリコンで製作されたコールドアームは、それと共に移動し、そのようなアクチュエータの少なくとも２つがスイッチに形成される場合、切り替えられるべき信号を伝送するために使用される金属ワイヤに結合される。 第１のチップ上のそのようなスイッチのアレイは、第１のチップに接合されるフリップチップである第２のチップと協同して構成することができ、第２のチップは、その上に、様々なホットアームを加熱するためのそれらへの電気制御電流、ならびに様々なスイッチによって切り替えられるべき信号を経路選択するワイヤを有する。 | ||||||
| 46 | Self-locking micro-electro-mechanical element | JP2009523384 | 2007-07-24 | JP2010500711A | 2010-01-07 | ヒルゲルス，アヒム |
| 本願は、微小電気機械(MEMS)技術に基づいた極小自動ロック式スイッチング部品の新規な構成について記載している。 従来のMEMSスイッチは、必要な能動（スイッチング）状態を得るため、連続的な制御信号を必要とする。 提案された発明は、当該部品のオン及び/又はオフを切り換えるため、短い制御信号（非ロック式入力）-たとえばパルス-しか必要としない。 制御解除信号のRF雑音（リップル）又はバウンス効果は、提案されたMEMS素子の拡張型によって無視できる。 このことは、より容易でかつしっかりとした電子回路の設計に寄与し、かつ機能の改善を可能にする。 | ||||||
| 47 | Semiconductor device and method of manufacturing the same | JP2008299290 | 2008-11-25 | JP2009141348A | 2009-06-25 | JEONG EUN-SOO |
| <P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a pyroelectricity switch transistor using a bimetal, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes: a metal film which is separated for a fixed space from a semiconductor substrate and in which two or more etching holes are formed; a lower metallic pattern and upper metallic pattern formed on the lower metallic pattern arranged in the separating space between the semiconductor substrate and the metal film; a pillar formed on the semiconductor substrate and supporting one side of the bottom surface of the lower metallic pattern; and a pad formed on the semiconductor substrate through an air layer corresponding to the lower metallic pattern. Thereby, a pyro-electric switch transistor using a bimetal having thermal expansion coefficients being mutually different is provided, such a transistor can be easily manufactured by an easy process, and an effect raising yield is performed. Moreover, a transistor of a new structure is developed, and cost reduction is achieved by shortening the process. <P>COPYRIGHT: (C)2009,JPO&INPIT | ||||||
| 48 | Electrical contact switchgear | JP37718398 | 1998-12-30 | JP4183817B2 | 2008-11-19 | 好克 市村; 光親 斉藤; 雄 近藤 |
| 49 | Micro system switch | JP2003519663 | 2002-06-07 | JP4027313B2 | 2007-12-26 | ヴィティガー、ペーター; ヴィドマー、ロラント、ダブリュー; デポン、ミシェル; ドレヒスラー、ウテ; ロートフイゼン、フゴ、イー |
| 50 | Bent switching fluid cavity | JP2006508637 | 2004-01-30 | JP2006523928A | 2006-10-19 | ウォン，マーヴィン，グレン; ダヴ，ルイス，アール; ボトカ，ジュリアス，ケイ |
| 曲がったスイッチング流体キャビティ(816)の第１と第２の交差チャネル(134、136)を基板の間に画定する、結合された第１と第２の基板(102、104)を有するスイッチ(100)。 スイッチング流体(818)は曲がったスイッチング流体キャビティ内に保持され、スイッチング流体に加えられる力に応答して第１と第２のスイッチ状態の間で移動可能である。 第１のスイッチ状態では、交差チャネルのうちの第１のチャネル内に大部分のスイッチング流体が強制的に入り、第２のスイッチ状態では、交差チャネルのうちの第２のチャネル内に大部分のスイッチング流体が強制的に入る。 | ||||||
| 51 | Electromechanical switch | JP2006012529 | 2006-01-20 | JP2006228717A | 2006-08-31 | NAKANISHI YOSHITO |
| <P>PROBLEM TO BE SOLVED: To provide an electromechanical switch capable of responding to switching at a high speed by low driving voltage. <P>SOLUTION: An electromechanical switch body 10 being a MEMS switch has a first movable electrode 14 and a second movable electrode 16 having both ends fixed and installed by a first anchor 12 and a second anchor 13 formed on a silicon substrate 2, and a fixed electrode 18 opposed to these movable electrodes. A first electromechanical switch 22 drivable by low voltage is composed of the first movable electrode 14 of relatively weak spring force and the fixed electrode 18. By constituting a second electromechanical switch 24 capable of latching by low voltage driving out of the the second movable electrode 16 of relatively strong spring force and the fixed electrode 18, the first movable electrode 14 is displaced at a high speed by the low driving voltage, and the first electromechanical switch is turned on at a high speed. The second movable electrode 16 causes natural vibration at a high speed by restoring force, and the second electromechanical switch is turned off at a high speed, and latches the returned second movable electrode 16 by the low driving voltage, and turns on the second electromechanical switch. <P>COPYRIGHT: (C)2006,JPO&NCIPI | ||||||
| 52 | Double-throw relay that has been micro-fabrication and an multimorph actuator and the electrostatic latching mechanism | JP2004527503 | 2002-08-08 | JP2005536013A | 2005-11-24 | ダニエル ジェイ ハイマン; マーク ケイ ハイマン; ピーター ディ ボグダノフ |
| 本発明は、１つのマイクロ機械加工されたスイッチング装置の開発にあたって複数のマルチモルフ・アクチュエータ・エレメントと複数の静電状態保持メカニズムとの機能的組み合わせを取り入れた１つの新しい種類のリレーである。 複数のエレメントのこの組み合わせは、高い信頼性及び低い電力消費を有するマイクロ製作された複数のリレーにおいてゼロ電力静電容量ラッチングの利点と複数の高力マルチモルフ・アクチュエータの利益とを提供する。 該リレー発明の動作は該装置のために幾つかの安定状態、すなわち、電力を使用しない１つの受動的状態、該マルチモルフ・アクチュエータを或る程度の電力で駆動する１つのアクティブ状態、及び、本質的に電力を要することなくスイッチ・レートを静電的に保持する１つの被ラッチ状態とに配慮している。 本発明に含まれる複数のマルチモルフ・アクチュエータは圧電マルチモルフ作動メカニズム、サーマル・マルチモルフ作動メカニズム及びバックリング・マルチモルフ作動メカニズムを含む。 これらの装置は、複数のアクチュエータ・アーマチュアの１つ以上のセットをカンチレバー構成又は固定ビーム構成で使用し、状態保持のために静電ラッチ電極の１つ以上のセットを使用する。 | ||||||
| 53 | Liquid metal switch and method for manufacturing it | JP2005115442 | 2005-04-13 | JP2005310773A | 2005-11-04 | FAZZIO RONALD SHANE |
| PROBLEM TO BE SOLVED: To provide a method for manufacturing a switch device which reduces a portion of a heating element, where a silicon substrate supports the portion, and which facilitates power adjustment of the heating element. SOLUTION: The method for manufacturing the switch device comprises a step for providing substrates 102, 1100 which have liquid metal switches 1320, 1322, 1324, 1342 arranged together inside with a sub-channel 1330 connected to the liquid metal switches 1320, 1322, 1324, 1342; a step for forming a cavity 106 filled with a sacrificed material 202 and connected to the subchannel 1330 in the first substrates 102, 1100; a step for at least partially forming a heating element 500 covering the sacrificed material 202; a step for forming conductive vias 702, 704 stretching up to the heating element 500 through one of the substrates 102, 1100; a step for removing the sacrificed material 202; and a step for bonding the substrates 102, 1100 together with an adhesive seal 1004. COPYRIGHT: (C)2006,JPO&NCIPI | ||||||
| 54 | Micro mechanical latching switch | JP2005019084 | 2005-01-27 | JP2005214618A | 2005-08-11 | GREYWALL DENNIS S |
| PROBLEM TO BE SOLVED: To further reduce the size of an ignition device and improve the safety. SOLUTION: The micro electromechanical switch (MEMS) device comprises a semiconductor wafer, a first dielectric layer formed on the semiconductor wafer, and a second semiconductor layer formed on the first layer. A first latching movable shuttle 103 is formed in the second layer, and, in response to predetermined acceleration of the MEMS device, is moved to a first direction with respect to the wafer to change the operation condition of the MEMS device from a first switch state to an intermediate switch state. A second movable shuttle 105 is formed in the first shuttle, and, in response to the force acting by heat, is moved to a second direction with respect to the first shuttle to change the operation condition of the MEMS device from the intermediate switch state to a second switch state. In the second switch state, an opening in the second movable shuttle is aligned with an opening in the wafer, and an optical signal can pass through the opening. COPYRIGHT: (C)2005,JPO&NCIPI | ||||||
| 55 | Electric switching assembly | JP2004119284 | 2004-04-14 | JP2004335456A | 2004-11-25 | DOVE LEWIS R; CARSON PAUL THOMAS; CASEY JOHN F; WONG MARVIN GLENN |
| <P>PROBLEM TO BE SOLVED: To provide an electric switching assembly with improved functions, reduced power consumption and improved reliability and interconnection property with other circuit. <P>SOLUTION: This electric switching assembly has a first non-conductive substrate, a first dielectric material layer deposited on a first surface of the first non-conductive substrate and patternized to form a heater cavity, a liquid metal channel and a passage connecting the heater cavity with a position along a liquid metal channel, a second non-conductive substrate, a second dielectric material layer deposited on a first surface of the second non-conductive substrate, and patternized to coincide at least with the heater cavity of the first dielectric material layer, and an adhesives layer deposited on the second dielectric material layer and patternized to coincide with the pattern of the first dielectric material layer. The surfaces of the first and the second non-conductive substrates face and contact with each other through the interposing first and second dielectric material layers and the adhesives layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI | ||||||
| 56 | Electrically isolated liquid metal micro-switch for integrally shielded microcircuit | JP2003338616 | 2003-09-29 | JP2004134399A | 2004-04-30 | DOVE LEWIS R; CASEY JOHN F; WONG MARVIN GLENN |
| PROBLEM TO BE SOLVED: To provide a liquid metal micro-switch used for a high-frequency microcircuit, which excels in reliability and shieldability. SOLUTION: In the micro-switch 110, two or more cavities 115, a main channel 120, and subchannels 125 communicating the cavity with the main channel are formed by a semiconductor process, etc. In two or more cavities 115, heaters 100 are installed and the cavities are filled up with inert gas. Liquid metals 130 such as mercury are enclosed in the main channel 120. In the main channel 120, two or more microswitch contacts, not illustrated in figures, are installed. When the micro-switch is heated by electrifying either of the heaters 100, the inert gas is expanded and moves the liquid metals 130 in the main channel 120, so that conduction/non-conduction states between the microswitch contacts are changed. COPYRIGHT: (C)2004,JPO | ||||||
| 57 | Wiping member, liquid ejector, and inkjet recorder | JP2002236202 | 2002-08-14 | JP2004074514A | 2004-03-11 | ITO HIROYUKI; OKUMURA HIDEKI; AKASE TAKASHI |
| <P>PROBLEM TO BE SOLVED: To provide a wiping member in which the scattering of liquid drop is suppressed at the end of wiping operation. <P>SOLUTION: The wiping member 21 comprising a planar body for wiping the nozzle forming plane of a liquid ejection head by moving relatively thereto has an inclining part 23 spreading gradually in the widthwise direction toward the base end part 24 from the free end part 22 abutting against the nozzle forming plane during wiping operation. The inclining part 23 may be formed by beveling or rounding the corner on the free end side. Width L at the free end part 22 may be set equal to the width of the nozzle forming plane in the same direction. <P>COPYRIGHT: (C)2004,JPO | ||||||
| 58 | Liquid separator in liquid metal microswitch | JP2003190322 | 2003-07-02 | JP2004055549A | 2004-02-19 | ZAREV SASKO |
| <P>PROBLEM TO BE SOLVED: To provide a liquid separator necessary for a liquid metal microswitch capable of achieving a high speed, low power consumption, and high reliability. <P>SOLUTION: This liquid separator for a liquid metal microswitch comprises a heater disposed inside a cavity of such a structure that the liquid metal microswitch is manufactured, and an auxiliary passage provided inside the structure to connect the cavity to a main passage. The auxiliary passage has a cross sectional area that is smaller at a boundary between the auxiliary passage and the main passage than at a boundary between the auxiliary passage and the cavity, so that gas can be filled in the cavity and the auxiliary passage to reach the main passage. <P>COPYRIGHT: (C)2004,JPO | ||||||
| 59 | Micro actuator device | JP2001571436 | 2001-03-16 | JP2003528744A | 2003-09-30 | ベルント ヴァーグナー，; ハンス ヨアキム クウェンツェル |
| (57)【要約】 本発明は、マイクロ反応装置、具体的には、マイクロリレーに関する。 これは、２つのサーモメカニカルマイクロアクチュエータ（３、４）を有する基板（１）を備える。 熱刺激に応じて、第１マイクロアクチュエータ（３）は、第２マイクロアクチュエータが基板表面（２）上に垂直な方向に移動する間に、前記基板表面（２）に平行な移動を行う。 両方のサーモメカニカルマイクロアクチュエータは、第１マイクロアクチュエータ（３）が、伸びた状態で、第２マイクロアクチュエータ（４）の下に達するように、互いに関連して配置される。 これらの条件によって、第１マイクロアクチュエータ（３）は、第２マイクロアクチュエータ（４）の動力源が断たれたときに、電力供給なしに、この位置で保持されうる。 本マイクロアクチュエータ装置によれば、個々のスイッチング状態を維持するために、エネルギを供給する必要もなく、マイクロリレーに対するサーモメカニカルマイクロアクチュエータの高い活性化力及び長い位置決め距離という利点を実現しうる。 | ||||||
| 60 | Actuator and switch | JP2001250915 | 2001-08-21 | JP2003062798A | 2003-03-05 | YASUOKA MASAZUMI; SANPEI HIROKAZU; MIZUNO JUN |
| PROBLEM TO BE SOLVED: To provide an extremely low power consumption switch. SOLUTION: The switch 100 has a moving part 50 whose both ends are supported. The switch 100 has a contact 70 provided at the moving part 50. The moving part 50 has a first bimetal 10 for displacing the contact in a prescribed direction corresponding to temperature and a second bimetal 20 for displacing the contact to a direction opposite to the prescribed direction corresponding to temperature. | ||||||
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