专利检索_ .自旋交换耦合的多层膜例如纳米结构的超晶格专利检索_ .自旋交换耦合的多层膜例如纳米结构的超晶格专利检索查询

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序号	专利名	申请号	申请日	公开（公告）号	公开（公告）日	发明人
101	Magnetoresistive device and electronic device	US10228602	2002-08-27	US20030042562A1	2003-03-06	Carsten Giebeler; Kars-Michiel Hubert Lenssen; Stephan Johann Zilker; Reinder Coehoorn
A magnetoresistive device (11) having a lateral structure and provided with a non-magnetic spacer layer (3) of organic semiconductor material allows the presence of an additional electrode (19). With this electrode (19), a switch-function is integrated into the device (11). Preferably, electrically conductive layers (13,23) are present for the protection of the ferromagnetic layers (1,2). The magnetoresistive device (11) is suitable for integration into an array so as to act as an MRAM device.
102	Magnetic multilayered films with reduced magnetostriction	US09894193	2001-06-27	US20030002227A1	2003-01-02	James Devereaux Jarratt
It is the primary object of the present invention to provide a shield and pole material with reduced magnetostriction while preserving good magnetic characteristics. This material is used in recording heads in tape and disk drives. The material is a repeating sequence of three layers. One layer is FeX(N) where the (N) indicates a nitrogenated film and the additional element, X, is preferentially Ta but can be selected from a group of elements. Another layer is made from a NiFe alloy. The third layer, disposed between the FeX(N) and NiFe layers is tantalum. The sequence of three layers is repeated to build the required thickness for the final material.
103	Unidirectional gyrotropic photonic crystal and applications for the same	US10127649	2002-04-22	US20020162988A1	2002-11-07	Alexander Figotin; Ilya Vitebskiy
An unidirectional gyrotropic photonic crystal allows electromagnetic wave propagation in a certain direction at a certain frequency and, at the same time, impedes electromagnetic wave propagation in the opposite direction. The electromagnetic wave with impeded propagation, called the nullfrozen modenull, ideally has zero group velocity and does not transfer the electromagnetic energy. A unidirectional gyrotropic photonic crystal is a periodic composite, incorporating a component displaying Faraday rotation. The property of unidirectionality can be achieved in gyrotropic photonic crystals by proper choices of constituents and their space arrangement. The invention can be used to enhance the capability and performance of microwave, millimeter wave, and submillimeter wave antennas, delay lines, nonlinear and nonreciprocal elements. It can also be used in integrated microwave circuitry.
104	Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film	US09834716	2001-04-13	US20020006529A1	2002-01-17	Hiroshi Sakakima; Eiichi Hirota; Yasuhiro Kawawake; Mitsuo Satomi; Yasunari Sugita
An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8
105	Magnetic field sensor and method for making same	US09341694	1999-07-26	US06291993B1	2001-09-18	Albert Fert; Frédéric Petroff; Luiz Fernando Schelp; Alain Schuhl
A magnetic sensor having a layer of nonmagnetic insulator including at least one layer of ferromagnetic particles. This combination of layers is sandwiched between two ferromagnetic electrodes. Electrons are transported by the tunneling effect between each electrode and the ferromagnetic particles. The tunneling resistance depends on the orientation of the magnetization of the electrodes and therefore varies in the presence of the magnetic field. The multichannel and multistage nature of the tunneling conduction eliminates the problems of short-circuiting by porosity, thus leading to less difficult fabrication and improved robustness in terms of breakdown. The possible thermal fluctuations of the magnetic moments of the aggregates can be suppressed by the choice of a magnetic material for the part of the insulating layer which contains the aggregates.
106	Magnetic field responsive device having giant magnetoresistive material and method for forming the same	US750689	1997-04-07	US5886523A	1999-03-23	Michael Richard John Gibbs; Gillian Anne Gehring; Harry Jarratt Blythe
A magnetic field responsive device which includes: an electrically insulating substrate (2), a layer of an electrically conductive soft magnetic material (3), a layer of giant magneto-resitive (GMR) material (5) arranged in electrical contact with ethe layer of electrically conductive soft magnetic material, the thickness of the GMR material layer being not greater than twice the mean free path of an electron in the said GMR material, the layers being arranged in any order or position on the substrate and having opposed directions of mangetisation in zero magnectic field.
107	Magneto-optic compositionally modulated structure	US685741	1996-07-24	US5858565A	1999-01-12	Randall H. Victora; Charles F. Brucker; Tukaram K. Hatwar
A compositionally modulated magneto-optic structure includes a plurality of layers defining a layer stack, the overall layer stack including the elements Tb, Fe, and Pb; or the elements Tb, Co, and Pb; or the elements Tb, Fe, and Bi; or the elements Tb, Co and Bi.
108	Thin film composite having ferromagnetic and piezoelectric properties comprising a layer of Pb-Cd-Fe and a layer of Cr-Zn-(Te or Tl)	US779353	1997-01-06	US5718983A	1998-02-17	Shimon Gendlin
A composition of materials having ferromagnetic and piezoelectric properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Fe.sub.y and a second layer of Cr.sub.(1-z-w) Zn.sub.z Te.sub.w where x, y, z and w are values within the ranges of 0.38.ltoreq.x.ltoreq.0.042, 0.08.ltoreq.y.ltoreq.0.094, 0.38.ltoreq.z.ltoreq.0.41, 0.28.ltoreq.w.ltoreq.0.31, and 0.25.ltoreq.(1-z-w).ltoreq.0.32. Additionally, each of the layers contain the elements of Bi, O, and S. A random-accessible, non-volatile memory built using the This memory provides for storing two independent bits of binary information in a single storage cell. Each cell comprises two orthogonal address lines formed on the opposite surface of a Si substrate, a composition of materials of the present invention formed over each of the address lines, and an electrode formed over each composition of materials. The data is stored electromagnetically and retrieved as a piezoelectric voltage.
109	Multilayered sendust films with a gas-doped sendust seed layer	US594359	1996-01-30	US5686193A	1997-11-11	John David Westwood
A layered magnetic structure with a seed layer on a substrate and a bulk layer on the seed layer. The seed layer is a gas-doped sendust layer with a thickness of 100-800 .ANG.. The bulk layer is sendust with a thickness of 0.3-10.0 .mu.m. The seed layer and the bulk layer have different weight compositions.
110	Perpendicular magnetic film, multilayered film for perpendicular magnetic film and process for producing perpendicular magnetic film	US158854	1993-11-29	US5496631A	1996-03-05	Kousaku Tamari
Disclosed herein is a perpendicular magnetic film comprising a spinel thin film which is formed on a substrate, which contains Fe as the main ingredient and further contains Co and Ni, and which has a coercive force of less than 3000 Oe, the plane (400) thereof being predominantly oriented in parallel with said substrate, the spacing of the plane (400) being not more than 2.082 .ANG., the molar ratio of Co to Fe being 0.005 to 0.32 and the molar ratio of Ni to Co being at least 0.6.
111	Integrated common mode and differential mode inductor device	US968759	1992-10-30	US5313176A	1994-05-17	Anand K. Upadhyay
An integrated EMI/RFI Filter Magnetic has differential and common mode inductors wound about an I-Core. The I-Core is juxtaposed with an E-Core, with the end surfaces of the E-Core legs facing the I-Core. The magnetic has a substantially closed magnetic path for the differential inductors and the common mode inductors.
112	Magnetoresistance effect element	US824005	1992-01-22	US5243316A	1993-09-07	Hiroshi Sakakima; Mitsuo Satomi; Toshio Takada; Teruya Shinjo
There is provided a magnetoresistance effect element which is a multilayer structure body wherein a first magnetic film layer made of Ni-rich Ni-Co-Fe having a thickness of 10 to 100 .ANG. and a second magnetic film layer made of Co-rich Co-Ni-Fe having a thickness of 10 to 100 .ANG., which are different from each other in coercive force, are integrally laminated with a non-magnetic metal film layer having a thickness of 10 to 100 .ANG. interposed therebetween. The non-magnetic metal film layer is of a metal, for example, Cu, Ag, Au, Pt, Ru or Re. (Ni.sub.A Co.sub.1-A).sub.B Fe.sub.1-B, Ni.sub.A Fe.sub.1-A or Ni.sub.A Co.sub.1-A is used as a material of the first magnetic film, and (Co.sub.C Ni.sub.1-C).sub.D Fe.sub.1-D is used as a material of the second magnetic film.
113	Flux spreading thin film magnetic devices	US360421	1989-06-02	US5085935A	1992-02-04	Michael L. Mallary
One aspect of the invention is a method of flux conduction comprising providing a structure with anisotropy not purely in the transverse in-plane direction such that flux spreading into the transverse in-plane direction can occur by rotation. Apparatus includes a thin film magnetic recording device having at least one pole with two magnetic layers and capable of conducting signal flux, a first of the magnetic layers having domains oriented in a first direction, a second of said magnetic layers having domains oriented in a second distinct direction, the layers coupled to each other such that signal flux can flow therebetween. Method of making and various embodiments disclosed.
114	Magnetic nitride film	US445105	1989-12-07	US5049209A	1991-09-17	Hiroshi Sakakima; Koichi Osano; Yuji Omata; Mitsuo Satomi; Koichi Kugimiya
The disclosed magnetic nitride T-M-N film (T is at least one metal selected from the group consisting of Fe, Co, Ni and Mn; M is at least one metal selected from the group consisting of Nb, Zr, Ti, Ta, Hf, Cr, W and Mo; N is nitrogen (N)) has excellent wear resistance and high electric resistivity, and the compositionally modulated nitride film shows a soft magnetic property, as well as thermal stability of the properties.
115	Method of manufacturing crystalline thin-film of rare-earth compounds	US497894	1990-03-22	US5041200A	1991-08-20	Hiromitsu Ishii; Tsuneharu Takeda; Kyuya Baba; Ikuhiro Yamaguchi
Gd and Bi are used as sputter sources and are simultaneously sputtered, or sputtered alternately, each time in an amount for forming a layer having a thickness of 10 atoms or less, thereby forming a thin film on a substrate, in which Gd and Bi are mixed at a ratio of 4:3. The thin film is heat-treated to form a crystalline thin film having a phase represented by Gd.sub.4 Bi.sub.3.
116	Magneto-optical recording medium	US748580	1985-06-25	US4701881A	1987-10-20	Fujio Tanaka; Nobutake Imamura
A magneto-optical recording medium is disclosed in which a magnetic thin film recording layer is formed by a magnetic material having a Curie temperature or magnetic compensation temperature as low as 50.degree. to 250.degree. C. and a coercive force as large as 1 KOe or more and having an easy axis of magnetization perpendicularly to the film surface. A substantially transparent magnetic material film layer of ferrite, garnet or the like is disposed adjacent the recording film layer, large in the Faraday rotation angle and having an easy axis of magnetization perpendicularly to the film surface. A transparent substrate is disposed on the side of incidence of light. The substantially transparent magnetic material layer of the ferrite, garnet or the like may increase the magneto-optical rotation angle in the magnetic thin film recording layer, or may increase the magneto-optical rotation angle by the Faraday effect. The thickness of the substantially transparent magnetic material layer is selected in such a region where the figure of merit .sqroot.R.multidot..theta..sub.k expressed by its reflectivity R and the magneto-optical rotation angle .theta..sub.k is maximum.
117	Multi-layered ferromagnetic film and method of manufacturing the same	US918333	1986-10-14	US4698273A	1987-10-06	Matahiro Komuro; Yuzo Kozono; Takeshi Yasuda; Shinji Narishige; Masanobu Hanazono; Tetsuro Kuroda
The film is composed of an alternate lamination of unit iron layers and unit layers of ferromagnetic iron compound such as Fe.sub.3 Al, Fe.sub.3 Si, Fe.sub.3 Ge and Fe.sub.3 Ga. The thickness of the both unit layers is less than 70 .ANG.. The film has a high saturation magnetization more than 230 emu/g and a high thermal stability so that the film is particularly applicable to a magnetic head core.
118	Flexible magnetic recording medium comprising an underlying film having reduced in-plane magnetic anisotropy under a surface film having perpendicular magnetic anisotropy	US710923	1985-03-12	US4657819A	1987-04-14	Hidefumi Funaki
In a flexible magnetic recording medium comprising first and second films (11) and (12) successively formed on a substrate (10), the first film comprises an alloy of nickel and iron together with a magnetization adjusting component. An amount of the magnetization adjusting component is adjusted so that the first film has saturation magnetization less than or equal to 500 e.m.u./cc. The magnetization adjusting component may be either molybdenum or a combination of molybdenum and copper. The magnetization adjusting component may be between 12 and 50% by weight in the first film. Alternatively, the magnetization adjusting component may be titanium or silicon. The alloy may be Permalloy. The substrate may be a polyester film.
119	Intermediary layers for epitaxial hexagonal ferrite films	US720202	1985-04-04	US4624901A	1986-11-25	Howard L. Glass
A single crystal film of a hexagonal ferrite is deposited on a nonmagnetic, single crystal substrate with a film of a second ferrite material interposed between the substrate and the hexagonal ferrite film. In a preferred embodiment, the substrate is of nonmagnetic spinel and the second ferrite material is a spinel ferrite.
120	Magnetic films having a predetermined coercivity	US3700500D	1967-12-04	US3700500A	1972-10-24	RODBELL DONALD STANLEY; LOMMEL JAMES M
D R A W I N G MAGNETIC FILMS HAVING A PREDETERMINED COERCIVITY ARE FORMED BY DISPOSING A VACUUM DEPOSITED, POLYCRYSTALLINE THIN MAGNETIC FILM OF IRON, COBALT OR NICKEL IN AN OXYGEN BEARING ATMOSPHERE AND SUBSEQUENTLY ANNEALING THE MAGNETIC FILM AT A TEMPERATURE BETWEEN 50C. AND 600C. FOR A SUFFICIENT PERIOD, E.G. BETWEEN 10 TO 300 MINUTES, TO INCREASE THE COERCIVITY OF THE MAGNETIC FILM TO A DESIRED VALUE WITHIN A FIXED RANGE. IN A SPECIFIC INSTANCE, A MONOTONIC INCREASE FROM 38.4 OERSTEDS TO 530 OERSTEDS WAS OBSERVED IN THE COERCIVE FORCE OF 300 A. THICK IRON FILM UPON A GLASS SUBSTRATE WHEN ANNEALED FOR 130 MINUTES AT A PRESSURE OF 5X10**-5 TORR. ANNEALING OF THE MAGNETIC FILMS GENERALLY WAS FOUND TO PRODUCE ONLY A FRACTIONAL DECREASE IN THE MAGNETIZATION OF THE FILMS.

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