序号 | 专利名 | 申请号 | 申请日 | 公开(公告)号 | 公开(公告)日 | 发明人 |
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141 | MAGNETIC STRUCTURE WITH STRATIFIED LAYERS | EP94923390.0 | 1994-07-15 | EP0710390A1 | 1996-05-08 | DAUGHTON, James, M. |
A composite film (F'1) on a substrate (11) having a first magnetostrictive, magnetoresistive, anisotropic ferromagnetic thin-film (F'1-1) provided on that substrate with a second ferromagnetic thin-film (11') provided immediately thereon which is also magnetorestrictive, magnetoresistive, anisotropic, with a composition differing from the first ferromagnetic thin-film (F'1-2). Various parameters of said first and second ferromagnetic thin-films (F'?1-1, F'1-2¿) are selected to provide such a composite film (F'1) with little or no magnetostriction. Such composite films can be used in various devices (figs 4 and 5). | ||||||
142 | MEMORY MATERIAL AND METHOD FOR ITS MANUFACTURE | EP93914174.0 | 1993-05-26 | EP0700571A1 | 1996-03-13 | GENDLIN, Shimon Apartment 19 |
A composition of materials having ferromagnetic, piezoeletric, and electro-optical properties is disclosed. In the preferred embodiment, the composition of materials (310 and 350) comprises a first layer of Pb(1-x-y)CdxSiy, a second layer of Se(1-z)Sz, and a third layer of Fe(1-w)Crw, where x, y, z and w are values within the ranges of 0.09 « x « 0.11, 0.09 « y « 0.11, 0.09 « z « 0.11 and 0.18 « w « 0.30. Additionally, each of the layers contain at least one of the elements of Ag, Bi, O and N. A random-accesible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single memory cell. Each cell comprises two orthogonal address lines formed on the opposite surface of an Si substrate, a composition of materials of the present invention formed over each of the address lines (340 and 320), and an electrode formed over each composition of materials. The data is stored electromagnetically and retrieved as a piezoelectric voltage. | ||||||
143 | Perpendicular magnetic film, multilayered film for perpendicular magnetic film and process for producing perpendicular magnetic film | EP93309512.7 | 1993-11-29 | EP0600697A1 | 1994-06-08 | Tamari, Kousaku |
A perpendicular magnetic film comprising a spinel thin film which is provided on a substrate; which contains Fe as the main ingredient and further contains Co and Ni; which has a coercive force of less than 2.39 x 10⁵ Am⁻¹ (3000 Oe); the plane (400) thereof being predominantly oriented in parallel with the said substrate, the spacing of the plane (400) being not more than 0.2082 nm; the molar ratio of Co:Fe being from 0.005:1 to 0.32:1 and the molar ratio of Ni:Co being not less than 0.6:1. |
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144 | Soft magnetic multilayer film and magnetic head provided with such a soft magnetic multilayer film | EP89202900.0 | 1989-11-16 | EP0370566B1 | 1994-03-23 | Dirne, Franciscus Wilhelmus Adrianus; De With, Hendrik; Witmer, Cornelis Henricus Maria; Tolboom, Johannes Adrianus Martinus; Lasinski, Peter |
145 | Thin film structures for magnetic recording heads | EP91113011.0 | 1991-08-02 | EP0472031A3 | 1992-07-08 | Andricacos, Panayotis Constantinou; Chang, Jei-Wei; Petek, Bojan; Romankiw, Lubomyr |
A magnetic thin film structure comprising a first layer (12) of magnetic material having a low anisotropy Hk magnetically coupled to a second layer (14) magnetic material having a high anisotropy Hk and a low coercivity. The laminate provides a dual anisotropy behavior such that the laminate exhibits a high initial permeability at relatively small applied fields during the read operation and a high anisotropy at high applied fields during the write operation. The laminate of the present invention reduces inductive head domain instability produced by the write operation while maintaining high reproducing sensitivity during the read operation. Use of the higher Hk material also reduces the sensitivity of the head performance to variation in process-induced stresses. |
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146 | Magnetic film laminate and magnetic secondary head thereof | EP91100872.0 | 1991-01-24 | EP0441186A3 | 1992-07-08 | Canaperi, Donald Francis; Krishnan, Mahadevaiyer,; Krongelb, Sol; Rath, David Lee; Romankiw, Lubomyr Taras |
Laminates of magnetic and magnetic quenching laminae are provided for use as magnetic thin film laminates for use in magnetic recording heads. The use of these films significantly reduces the number of domains and Barkhausen noise levels in such recording heads. |
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147 | Thin film structures for magnetic recording heads | EP91113011.0 | 1991-08-02 | EP0472031A2 | 1992-02-26 | Andricacos, Panayotis Constantinou; Chang, Jei-Wei; Petek, Bojan; Romankiw, Lubomyr |
A magnetic thin film structure comprising a first layer (12) of magnetic material having a low anisotropy Hk magnetically coupled to a second layer (14) magnetic material having a high anisotropy Hk and a low coercivity. The laminate provides a dual anisotropy behavior such that the laminate exhibits a high initial permeability at relatively small applied fields during the read operation and a high anisotropy at high applied fields during the write operation. The laminate of the present invention reduces inductive head domain instability produced by the write operation while maintaining high reproducing sensitivity during the read operation. Use of the higher Hk material also reduces the sensitivity of the head performance to variation in process-induced stresses. |
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148 | Soft magnetic alloy films | EP90312482.4 | 1990-11-15 | EP0430504A2 | 1991-06-05 | Ihara, Keita; Sakakima, Hiroshi; Osano, Koichi |
The present invention relates to a film of soft magnetic Fe based alloy containing nitrogen which is suited as a core material for e.g. a magnetic head. The soft magnetic alloy film of the present invention is not a simple nitride alloy film but incorporates a compositional modulation in which at least the content of nitrogen is periodically modulated in the direction of film thickness after the deposition of the alloy film by a sputtering procedure. Also, the soft magnetic alloy film of the present invention contains a main content of Fe for providing higher saturation magnetization, one or more metals selected from Nb, Ta, Zr₁ Ti, and Hf, and fine grains of Fe based materials developed after annealing. Therefore, the soft magnetic alloy film of the present invention can exhibit better magnetic properties including higher saturation magnetization and improved soft magnetic characteristics after the annealing and also, ensuring minimum magnetostriction with a specific composition. |
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149 | Thin film device for rotational magnetic flux conduction | EP90305150.6 | 1990-05-14 | EP0401983A1 | 1990-12-12 | Mallary, Michael L. |
One aspect of the invention is a method of flux conduction comprising providing a structure with anisotropy not purely in the transverse in-plane direction such that flux spreading into the transverse in-plane direction can occur by rotation. Apparatus includes a thin film magnetic recording device having at least one pole with two magnetic layers and capable of conducting signal flux, a first of the magnetic layers having domains oriented in a first direction, a second of said magnetic layers having domains oriented in a second distinct direction, the layers coupled to each other such that signal flux can flow therebetween. Method of making and various embodiments disclosed. |
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150 | Flux spreading thin film magnetic devices | EP89307389.0 | 1989-07-20 | EP0353911A2 | 1990-02-07 | Mallary, Michael; Shukovsky, Harold B. |
One aspect of the invention is a method of flux conduction comprising providing a structure with anisotropy not purely in the transverse in-plane direction such that flux spreading into the transverse in-plane direction can occur by rotation. Another aspect includes a method for producing a thin film magnetic device capable of conducting signal flux along a first axis, having at least two active magnetic layers for at least one pole, a first of the active magnetic layers having domains which are oriented in a first direction at rest and a second of the active magnetic layers has domains which are oriented in a second direction at rest. The layers are coupled to each other such that signal flux can flow therebetween. In another aspect, a thin film magnetic device having at least one set of magnetic domains is capable of conducting signal flux along a first axis, having at least one set of magnetic domains, a first of the magnetic domains is capable of conducting flux in a first direction at an angle to the first axis, a second of said magnetic domains is capable of conducting flux in a second direction other than the first direction, the domains coupled to each other such that signal flux can flow along the first axis. In yet another aspect, each of the domains of the set is capable of conducting signal flux in a first and a second in-plane direction. Apparatus includes a thin film magnetic recording device having at least one pole with two magnetic layers and capable of conducting signal flux, a first of the magnetic layers having domains oriented in a first direction, a second of said magnetic layers having domains oriented in a second distinct direction, the layers coupled to each other such that signal flux can flow therebetween. The layers may be at right angles to each other, one layer parallel to the axis of signal flux conduction, or may be canted at other angles in symmetry with the axis of signal flux conduction. Another apparatus includes a magnetic conduction path defined by a series of domains, some domains at least capable of rotation into a first low reluctance path, some domains at least capable of rotation into a second low reluctance path. |
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151 | Nitrogen-containing magnetic alloy film | EP88105641.0 | 1988-04-08 | EP0286124A2 | 1988-10-12 | Sakakima, Hiroshi; Osano, Koichi; Omata, Yuji |
A nitrogen-containing magnetic alloy film composed of T-M-X amorphous alloy film and (T-M-X)N nitride film, and another film having a composition represented by (T-M-X)N and being compositionally modulated (In both cases T is at least one element selected from the group of Fe, Co, Ni and Mn, M is at least one element selected from the group of Ti, Zr, Hf, Nb, Ta, Cr, Mo, W, Re and Ru, X is at least one element selected from the group of B, Si, Ge and Al, and N is nitrogen.) show excellent characteristics for magnetic head cores such as soft magnetic property and wear resistance. |
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152 | Magnetic alloy thin film | EP85108949 | 1985-07-17 | EP0168825A3 | 1987-01-21 | Hayakawa, Masatoshi; Aso, Koichi; Ochiai, Yoshitaka; Matsuda, Hideki; Hayashi, Kazuhiko; Ishiakawa, Wataru; Iwasaki, You |
A magnetic alloy thin film consisting essentially of a first Fe-Al-Si or Fe-Ni alloy thin film of high permeability and a second Fe-Si alloy thin film directly formed on the first thin film and having high saturation magnetic flux density. The ratio in thickness of the first and second films is preferably in the range of from 1:0.1 to 2. |
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153 | SPINTRONICS ELEMENT | US16013093 | 2018-06-20 | US20180301621A1 | 2018-10-18 | Soshi SATO; Masaaki NIWA; Hiroaki HONJO; Shoji IKEDA; Hideo SATO; Hideo OHNO; Tetsuo ENDOH |
A spintronics element including a ferromagnetic layer containing boron, and a diffusion stopper film covering a side face of the ferromagnetic layer partially or entirely, the side face in direct contact with diffusion stopper film, so as to prevent out-diffusion of the boron contained in the ferromagnetic layer. The diffusion stopper film contains boron at a concentration higher than a concentration of the boron in a portion of the ferromagnetic layer where the ferromagnetic layer contacts the diffusion stopper film. | ||||||
154 | Tunable magnonic crystal device and filtering method | US15604314 | 2017-05-24 | US10033078B2 | 2018-07-24 | Florin Ciubotaru; Hanns Christoph Adelmann; Xiao Sun |
The present disclosure relates to a tunable magnonic crystal device comprising a spin wave waveguide, a magnonic crystal structure in or on the spin wave waveguide, and a magneto-electric cell operably connected to the magnonic crystal structure. The magnonic crystal structure is adapted for selectively filtering a spin wave spectral component of a spin wave propagating through the spin wave waveguide so as to provide a filtered spin wave. The magneto-electric cell comprises an electrode for receiving a control voltage, and adjusting the control voltage controls a spectral parameter of the spectral component of the spin wave via an interaction, dependent on the control voltage, between the magneto-electric cell and a magnetic property of the magnonic crystal structure. | ||||||
155 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | US15477288 | 2017-04-03 | US10014465B1 | 2018-07-03 | Huanlong Liu; Yuan-Jen Lee; Jian Zhu; Guenole Jan; Luc Thomas; Po-Kang Wang; Ru-Ying Tong; Jodi Mari Iwata |
A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer has an interface with a tunnel barrier and a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or CoXFeYNiZLW wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing at about 400° C. thereby promoting BCC structure growth in the oxide layer. As a result, free layer PMA is enhanced and maintained to yield improved thermal stability. | ||||||
156 | SPIN ORBIT TORQUE GENERATING MATERIALS | US15836421 | 2017-12-08 | US20180166197A1 | 2018-06-14 | Jian-Ping Wang; Mahendra DC; Mahdi Jamali; Andre Mkhoyan; Danielle Hickey |
A material may include at least one of BixSe(1-x), BixTe(1-x), or SbxTe(1-x), where x is greater than 0 and less than 1. In some examples, the material exhibits a Spin Hall Angle of greater than 3.5 at room temperature. The disclosure also describes examples of devices that include a spin-orbit torque generating layer, in which the spin-orbit torque generating layer includes at least one of BixSe(1-x), BixTe(1-x), or SbxTe(1-x), where x is greater than 0 and less than 1. In some examples, the spin-orbit torque generating layer exhibits a Spin Hall Angle of greater than 3.5 at room temperature. | ||||||
157 | Fully Compensated Synthetic Ferromagnet for Spintronics Applications | US15707373 | 2017-09-18 | US20180026179A1 | 2018-01-25 | Jian Zhu; Guenole Jan; Yuan-Jen Lee; Huanlong Liu; Ru-Ying Tong; Po-Kang Wang |
A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed layer, and a second amorphous layer where each seed layer may be Mg and has a resputtering rate 2 to 30× that of the amorphous layers that are TaN, SiN, or a CoFeM alloy. A template layer that is NiCr or NiFeCr is formed on the second amorphous layer. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The laminated seed layer stack may include a bottommost Ta or TaN buffer layer. | ||||||
158 | Multilayer Structure for Reducing Film Roughness in Magnetic Devices | US15599755 | 2017-05-19 | US20170256703A1 | 2017-09-07 | Jian Zhu; Guenole Jan; Yuan-Jen Lee; Huanlong Liu; Ru-Ying Tong; Jodi Mari Iwata; Vignesh Sundar; Luc Thomas; Yu-Jen Wang; Sahil Patel |
A seed layer stack with a uniform top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer on a smoothing layer such as Mg where the latter has a resputtering rate 2 to 30× that of the amorphous layer. The uppermost seed (template) layer is NiW, NiMo, or one or more of NiCr, NiFeCr, and Hf while the bottommost seed layer is one or more of Ta, TaN, Zr, ZrN, Nb, NbN, Mo, MoN, TiN, W, WN, and Ru. Accordingly, perpendicular magnetic anisotropy in an overlying magnetic layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The amorphous seed layer is SiN, TaN, or CoFeM where M is B or another element with a content that makes CoFeM amorphous as deposited. | ||||||
159 | ELECTRONIC DEVICE | US15073355 | 2016-03-17 | US20170155039A1 | 2017-06-01 | Jung-Hwan Moon; Sung-Joon Yoon |
This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include a free layer including a plurality of magnetic layers each having a variable magnetization direction; a tunnel barrier layer formed over the free layer; and a pinned layer formed over the tunnel barrier layer and having a pinned magnetization direction; wherein the plurality of magnetic layers in the free layer includes a first magnetic layer in contact with the tunnel barrier layer and a second magnetic layer not in contact with the tunnel barrier layer and a sum of an exchange field between the first magnetic layer and the second magnetic layer and a stray field generated by the first magnetic layer is larger than or the same as a difference between a uniaxial anisotropy field of the second magnetic layer and a demagnetizing field due to a shape of the second magnetic layer. | ||||||
160 | Semiconductor device having pinned layer with enhanced thermal endurance | US14741446 | 2015-06-16 | US09666789B2 | 2017-05-30 | Jeong-Heon Park; Ki-Woong Kim; Hee-Ju Shin; Joon-Myoung Lee; Woo-Jin Kim; Jae-Hoon Kim; Se-Chung Oh; Yun-Jae Lee |
A semiconductor device is provided having a free layer and a pinned layer spaced apart from each other. A tunnel barrier layer is formed between the free layer and the pinned layer. The pinned layer may include a lower pinned layer, and an upper pinned layer spaced apart from the lower pinned layer. A spacer may be formed between the lower pinned layer and the upper pinned layer. A non-magnetic junction layer may be disposed adjacent to the spacer or between layers in the upper or lower pinned layer. |