子分类：
- H01F10/3204： ..{非晶多层膜的交换耦合}
- H01F10/3209： ..{石榴石多层膜的交换耦合}
- H01F10/3213： ..{磁性半导体多层膜的交换耦合,例如 MnSe/ZnSe超晶格(用于半导体器件的半导体材料入H01L29/12)}
- H01F10/3218： ..{通过反铁磁界面的磁性薄膜的交换耦合(H01F10/3268优先)}
- H01F10/3222： ..{交换耦合的硬/软多层膜,例如CoPt/Co或NiFe/CoSm(纳米弹簧磁铁入H01F1/0579)}
- H01F10/3227： ..{通过一个或多个磁性超薄膜或颗粒膜的交换耦合}
- H01F10/324： ..{磁性薄膜对的通过非常薄的非磁性间隔物的交换耦合,例如通过与间隔物的传导电子交换}
| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 81 | SENSOR DEVICE WITH A SOFT MAGNETIC ALLOY HAVING REDUCED COERCIVITY, AND METHOD FOR MAKING SAME | US15660337 | 2017-07-26 | US20180031645A1 | 2018-02-01 | Jan-Willem BURSSENS; Robert RACZ |
| A sensor device comprising a substrate, the substrate comprising one or more magnetic sensor elements; a first elastomeric material on top of the one or more magnetic sensor elements; a magnetic layer comprising a soft magnetic metal alloy deposited by electroplating or by sputtering on top of the first elastomeric material; and optionally a second elastomeric material on top of the magnetic layer. The substrate may be a CMOS device with IMC encapsulated between two polyimide layers. The magnetic material may be annealed at 250° C. to 295° C. using a constant or rotating magnetic field having a strength in the range from 100 to 300 mTesla. The soft magnetic alloy is arranged as Integrated Magnetic Concentrator (IMC). | ||||||
| 82 | ALLOY CRYSTALLISATION METHOD | US15117504 | 2015-02-12 | US20160359104A1 | 2016-12-08 | Luke Roger Fleet; Atsufumi Hirohata; James Thomas Sagar |
| A crystallisation method for an alloy film such as a Co-based ternary Heusler-alloy is described having the steps of: providing a substrate; depositing a layer of the alloy film to be crystallised onto the substrate using a physical vapour deposition process to a depth of up to a few hundred nm; optionally depositing a capping layer thereon; heating the deposited film at an annealing temperature below 300° C. and for example of around 200° C. to 300° C. to effect crystallisation of the alloy film layer. The method is in particular applied to the in the deposition and annealing in situ of an alloy film in or on a semiconductor device for example as a functional film in or on such a device and in particular to the deposition and annealing in situ of a highly-spin-polarised ferromagnetic thin film on a semiconductor or spintronic device. | ||||||
| 83 | Storage element, memory and electronic apparatus | US15086568 | 2016-03-31 | US09515254B2 | 2016-12-06 | Kazutaka Yamane; Masanori Hosomi; Hiroyuki Ohmori; Kazuhiro Bessho; Yutaka Higo; Hiroyuki Uchida |
| A storage element is provided. The storage element includes a memory layer having a first magnetization state of a first material; a fixed magnetization layer having a second magnetization state of a second material; an intermediate layer including a nonmagnetic material and provided between the memory layer and the fixed magnetization layer; wherein the first material includes Co—Fe—B alloy, and at least one of a non-magnetic metal and an oxide. | ||||||
| 84 | Storage element, memory and electronic apparatus | US14943781 | 2015-11-17 | US09324940B2 | 2016-04-26 | Kazutaka Yamane; Masanori Hosomi; Hiroyuki Ohmori; Kazuhiro Bessho; Yutaka Higo; Hiroyuki Uchida |
| A storage element is provided. The storage element includes a memory layer having a first magnetization state of a first material; a fixed magnetization layer having a second magnetization state of a second material; an intermediate layer including a nonmagnetic material and provided between the memory layer and the fixed magnetization layer; wherein the first material includes Co—Fe—B alloy, and at least one of a non-magnetic metal and an oxide. | ||||||
| 85 | MULTIFERROIC NANOSCALE THIN FILM MATERIALS, METHOD OF ITS FACILE SYNTHESES AND MAGNETOELECTRIC COUPLING AT ROOM TEMPERATURE | US14052340 | 2013-10-11 | US20160012951A1 | 2016-01-14 | Ronald G. Pirich; Nan-Loh Yang; Kai Su; I-Wei Chu |
| Methods of producing a multiferroic thin film material. The method includes the steps of providing a multiferroic precursor solution, subjecting the precursor solution to spin casting to produce a spin cast film, and heating the spin cast film. The precursor solution may include Bi(NO3)3.5H2O and Fe(NO3)3.9H2O in ethylene glycol to produce a bismuth ferrite film. Further, the thin film may be utilized in varied technological areas, including memory devices for information storage. | ||||||
| 86 | SEMICONDUCTOR DEVICE HAVING PINNED LAYER WITH ENHANCED THERMAL ENDURANCE | US14741446 | 2015-06-16 | US20150280108A1 | 2015-10-01 | JEONG-HEON PARK; KI-WOONG KIM; HEE-JU SHIN; JOON-MYOUNG LEE; WOO-JIN KIM; JAE-HOON KIM; SE-CHUNG OH; YUN-JAE LEE |
| A semiconductor device is provided having a free layer and a pinned layer spaced apart from each other. A tunnel barrier layer is formed between the free layer and the pinned layer. The pinned layer may include a lower pinned layer, and an upper pinned layer spaced apart from the lower pinned layer. A spacer may be formed between the lower pinned layer and the upper pinned layer. A non-magnetic junction layer may be disposed adjacent to the spacer or between layers in the upper or lower pinned layer. | ||||||
| 87 | Spin transfer oscillator | US13702413 | 2011-06-09 | US08878618B2 | 2014-11-04 | Claire Baraduc; Bernard Dieny; Christophe Thirion; Nicolas De Mestier Du Bourg |
| A spin transfer oscillator including a magnetic stack including at least two magnetic layers, at least one of the two magnetic layers is an oscillating layer that has variable direction magnetization and a current supply device configured to cause the flow of a current of electrons perpendicularly to the plane of the magnetic stack. The magnetic stack includes a device to generate inhomogeneities of current at the level of the surface of the oscillating layer and the intensity of the current supplied by the supply device is selected such that the magnetization of the oscillating layer has a consistent magnetic configuration, the magnetic configuration oscillating as a whole at the same fundamental frequency. | ||||||
| 88 | MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF | US13962918 | 2013-08-08 | US20140284592A1 | 2014-09-25 | Makoto NAGAMINE; Daisuke IKENO; Katsuya NISHIYAMA; Katsuaki NATORI; Koji YAMAKAWA |
| According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier provided on the first ferromagnetic layer, and a second ferromagnetic layer provided on the tunnel barrier. The tunnel barrier includes a nonmagnetic mixture containing MgO and a metal oxide with a composition which forms, in a solid phase, a single phase with MgO. | ||||||
| 89 | SPIN TORQUE OSCILLATOR (STO) READER WITH SOFT MAGNETIC SIDE SHIELDS | US13714322 | 2012-12-13 | US20140168812A1 | 2014-06-19 | Patrick M. Braganca; Bruce A. Gurney; Yang Li |
| In one embodiment, a magnetic head includes a first shield; a spin torque oscillator (STO) sensor positioned above the first shield, the STO sensor comprising a reference layer and a free layer positioned above the reference layer; and at least one shield positioned in a plane that is parallel with a media-facing surface of the STO sensor, the plane also intersecting the STO sensor, wherein one or more of the at least one shield comprises a highly magnetically permeable material that is exchange decoupled and electrically decoupled from the STO sensor. Other magnetic heads, systems, and methods for producing the magnetic heads are described according to more embodiments. | ||||||
| 90 | LAMINATE COMPOSITE AND METHOD FOR MAKING SAME | US13300228 | 2011-11-18 | US20120126920A1 | 2012-05-24 | Arthur J. Epstein; Chi-Yueh Kao; Yong G. Min |
| An organic-based magnet is formed by molecular layer deposition (MLD) of a first compound and MLD of a second compound. The first or second compound containing a metal-containing compound. The first and second compounds being reactive with each other to form a first layer organic-based magnet. A laminate composite includes a first monolayer including a metal bonded to a magnet forming organic compound. A second monolayer may be in direct contact with the first monolayer. One of the first monolayer and the second monolayer having an induced magnetization when exposed to a magnetic field. A device includes the laminate composite and a nonmagnetic film thereon. A method of making an organic magnet on a substrate in a vacuum chamber includes depositing a first layer of metal-containing compound on the substrate by MLD. | ||||||
| 91 | Magnetoresistance effect element comprising a nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same | US10882315 | 2004-07-02 | US07522389B2 | 2009-04-21 | Rachid Sbiaa; Isamu Sato |
| A magnetoresistance effect element is composed of a first ferromagnetic layer, a second ferromagnetic layer, and at least one nano-contact portion formed between the first and second ferromagnetic layers, which are formed on the same plane on a substrate. The nano-contact portion has a maximum dimension of not more than Fermi length of a material constituting the nano-contact portion. A permanent magnet layer or in-stack bias layer may be further formed on the first and/or second ferromagnetic layer. | ||||||
| 92 | Magnetoresistive medium including nanowires | US11078405 | 2005-03-14 | US07459222B2 | 2008-12-02 | Igor Shvets; Sunil Kumar Arora; Sumesh Sofin Ramakrishna Pilli |
| A magnetoresistive medium (1) includes a substrate (2) which has been treated to provide a miscut vicinal surface (3) in the form of terraces (4) and steps (5) of atomic and nanometer scale. There are discrete separated spacer nanowires (7) provided by an intermediate partial spacer film on each terrace (4) against each step (5). A further main film (11) provides main nanowires (10(a), 10(b)). A thin protective layer (15) covers the main nanowires (10(a), 10(b)) which form two separate subsets of main nanowires with different exchange interaction with the substrate and thus a different response to an external magnetic field. In use, when an external magnetic field (H) is applied the response of the main nanowires (10(a), 10(b)) changes as the exchange coupling with the substrate (2) varies and the magnetisation on the main nanowires (10(a), 10(b)) change. This is shown by the arrows while prior to the application of the external magnetic field, they might, for example, be aligned. Many different constructions of magnetoresistive media are described. | ||||||
| 93 | Magnetoresistive device and electronic device | US11064230 | 2005-02-23 | US20050145909A1 | 2005-07-07 | Carsten Giebeler; Kars-Michiel Lenssen; Stephan Zilker; Reinder Coehoorn |
| A magnetoresistive device (11) having a lateral structure and provided with a non-magnetic spacer layer (3) of organic semiconductor material allows the presence of an additional electrode (19). With this electrode (19), a switch-function is integrated into the device (11). Preferably, electrically conductive layers (13,23) are present for the protection of the ferromagnetic layers (1,2). The magnetoresistive device (11) is suitable for integration into an array so as to act as an MRAM device. | ||||||
| 94 | Spin switch and magnetic storage element using it | US10258313 | 2002-01-18 | US06878979B2 | 2005-04-12 | Nozomu Matsukawa; Masayoshi Hiramoto; Akihiro Odagawa; Mitsuo Satomi; Yasunari Sugita |
| A spin switch that can be driven with voltage. This spin switch includes the following: a ferromagnetic material; a magnetic semiconductor magnetically coupled to the ferromagnetic material; an antiferromagnetic material magnetically coupled to the magnetic semiconductor; and an electrode connected to the magnetic semiconductor via an insulator. A change in the electric potential of the electrode causes the magnetic semiconductor to make a reversible transition between a ferromagnetic state and a paramagnetic state. When the magnetic semiconductor is changed to the ferromagnetic state, the ferromagnetic material is magnetized in a predetermined direction due to the magnetic coupling with the magnetic semiconductor. | ||||||
| 95 | Magnetoresistance effect element, method of manufacturing same and magnetic head utilizing same | US10882315 | 2004-07-02 | US20050068688A1 | 2005-03-31 | Rachid Sbiaa; Isamu Sato |
| A magnetoresistance effect element is composed of a first ferromagnetic layer, a second ferromagnetic layer, and at least one nano-contact portion formed between the first and second ferromagnetic layers, which are formed on the same plane on a substrate. The nano-contact portion has a maximum dimension of not more than Fermi length of a material constituting the nano-contact portion. A permanent magnet layer or in-stack bias layer may be further formed on the first and/or second ferromagnetic layer. | ||||||
| 96 | Magnetic thin film media with a pre-seed layer of CrTi | US10903064 | 2004-07-29 | US20050031909A1 | 2005-02-10 | Xiaoping Bian; Mary Doerner; James Hagan; Tim Minvielle; Mohammad Mirzamaani; Adam Polcyn; Kai Tang |
| The applicants disclose a thin film magnetic media structure with a pre-seed layer of CrTi. The CrTi pre-seed layer presents an amorphous or nanocrystalline structure. The preferred seed layer is RuAl for use with the CrTi pre-seed layer. The use of the CrTi/RuAl bilayer structure provides superior adhesion to the substrate and resistance to scratching, as well as, excellent coercivity and signal-to-noise ratio (SNR) and reduced cost over the prior art. One embodiment of the invention sputter-deposits a CrTi pre-seed layer and a RuAl seed layer followed by an underlayer and at least one magnetic layer on a circumferentially polished substrate structure to achieve an Mrt orientation ratio greater than one. Two methods according to the invention allow the Mrt orientation ratio of the disk to be adjusted or maximized by varying the thickness of the RuAl seed layer and/or altering the atomic percentage of titanium in the pre-seed layer. | ||||||
| 97 | Magnetic head having high conductivity lead structures seeded by epitaxially matched seed layer | US10273451 | 2002-10-17 | US06853519B2 | 2005-02-08 | Michael Andrew Parker; Mustafa Pinarbasi; Robert Otto Schwenker |
| The present invention is directed towards increasing the conductivity of the electrical lead material in the read head portion of a magnetic head, such that thinner electrical leads can be fabricated while the current carrying capacity of the leads is maintained. This increase in electrical lead conductivity is accomplished by fabricating the electrical lead upon an epitaxially matched seed layer, such that the crystalline microstructure of the electrical lead material has fewer grain boundaries, whereby the electrical conductivity of the lead material is increased. In a preferred embodiment, the electrical lead material is comprised of Rh, which has an FCC crystal structure, and the seed layer is comprised of a metal, or metal alloy having a BCC crystal structure with unit cell lattice constant dimensions that satisfy the relationship that abcc is approximately equal to 0.816afcc. In various embodiments, the seed layer is comprised of VMo or VW. | ||||||
| 98 | Magnetic head having high conductivity lead structures seeded by epitaxially matched seed layer and fabrication method therefor | US10273451 | 2002-10-17 | US20040075954A1 | 2004-04-22 | Michael Andrew Parker; Mustafa Pinarbasi; Robert Otto Schwenker |
| The present invention is directed towards increasing the conductivity of the electrical lead material in the read head portion of a magnetic head, such that thinner electrical leads can be fabricated while the current carrying capacity of the leads is maintained. This increase in electrical lead conductivity is accomplished by fabricating the electrical lead upon an epitaxially matched seed layer, such that the crystalline microstructure of the electrical lead material has fewer grain boundaries, whereby the electrical conductivity of the lead material is increased. In a preferred embodiment, the electrical lead material is comprised of Rh, which has an FCC crystal structure, and the seed layer is comprised of a metal, or metal alloy having a BCC crystal structure with unit cell lattice constant dimensions that satisfy the relationship that abcc is approximately equal to 0.816afcc. In various embodiments, the seed layer is comprised of VMo or VW. | ||||||
| 99 | Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film | US09834716 | 2001-04-13 | US06562486B2 | 2003-05-13 | Hiroshi Sakakima; Eiichi Hirota; Yasuhiro Kawawake; Mitsuo Satomi; Yasunari Sugita |
| An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8 | ||||||
| 100 | Bilayer seed layer for spin valves | US09615359 | 2000-07-13 | US06560078B1 | 2003-05-06 | Mustafa Pinarbasi |
| An apparatus is described comprising a seed layer between a gap layer and an Iridium Manganese (IrMn) antiferromagnetic layer. The seed layer comprises an oxide layer next to a magnetic layer. | ||||||
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