- H01F10/002： .{反铁磁薄膜,即薄膜表现出 Néel 转变温度(H01F10/3218和H01F10/3268优先)}
- H01F10/005： .{有机或有机金属薄膜,如通过Langmuir-Blodgett技术得到的单分子薄膜,石墨烯}
- H01F10/007： .{超薄膜或颗粒膜(H01F10/005和H01F10/3227优先;在基底上施加超薄层或颗粒层入H01F41/301)}
- H01F10/06： .按与连接导体或相互作用导体的耦合或物理接触特点区分的
- H01F10/08： .按磁层的特性区分的(H01F10/32优先;在基底上施加磁性膜入H01F41/14)
- H01F10/26： .按基底或中间层特性区分的(H01F10/06和H01F10/32优先)
- H01F10/32： .自旋交换耦合的多层膜,例如纳米结构的超晶格{(在基底上施加自旋交换耦合的多层膜入H01F41/302)}
| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 1 | 制造高密度磁性介质的设备及方法 | CN201280034876.7 | 2012-09-13 | CN103688308B | 2017-07-07 | 斯蒂芬·莫法特 |
| 一种具有磁性性质图案的基板，可通过以下方法形成：在基板上形成磁性非活性层、在磁性非活性层上形成磁性前驱物、及通过施加热能至磁性前驱物而在磁性前驱物中形成由磁性非活性畴隔开的磁性活性畴。可使用激光施加热能，该热能可为脉冲式。形成磁性活性畴可包括使磁性前驱物的各部分结晶。 | ||||||
| 2 | 制造高密度磁性介质的设备及方法 | CN201280034876.7 | 2012-09-13 | CN103688308A | 2014-03-26 | 斯蒂芬·莫法特 |
| 一种具有磁性性质图案的基板，可通过以下方法形成：在基板上形成磁性非活性层、在磁性非活性层上形成磁性前驱物、及通过施加热能至磁性前驱物而在磁性前驱物中形成由磁性非活性畴隔开的磁性活性畴。可使用激光施加热能，该热能可为脉冲式。形成磁性活性畴可包括使磁性前驱物的各部分结晶。 | ||||||
| 3 | 整流装置、晶体管以及整流方法 | CN201280039425.2 | 2012-08-21 | CN103718303A | 2014-04-09 | 好田诚; 新田淳作; 小林研介 |
| 一种整流装置，具备：一维沟道(18)，其由半导体构成且用于电子移动；电极(26)，其通过对所述一维沟道施加电场，对在所述一维沟道中移动的电子使起因于自旋轨道相互作用的有效磁场在与所述电子移动的方向交叉的方向上生成；和外部磁场生成部(38)，其对所述一维沟道生成外部磁场。 | ||||||
| 4 | 整流装置、晶体管以及整流方法 | CN201280039425.2 | 2012-08-21 | CN103718303B | 2015-05-20 | 好田诚; 新田淳作; 小林研介 |
| 一种整流装置，具备：一维沟道(18)，其由半导体构成且用于电子移动；电极(26)，其通过对所述一维沟道施加电场，对在所述一维沟道中移动的电子使起因于自旋轨道相互作用的有效磁场在与所述电子移动的方向交叉的方向上生成；和外部磁场生成部(38)，其对所述一维沟道生成外部磁场。 | ||||||
| 5 | RECTIFYING DEVICE, TRANSISTOR, AND RECTIFYING METHOD | EP12825398 | 2012-08-21 | EP2736080A4 | 2015-06-24 | KOHDA MAKOTO; NITTA JUNSAKU; KOBAYASHI KENSUKE |
| 6 | Magnetic thin film and magnetic head using the same | EP98307030.1 | 1998-09-02 | EP0902445A1 | 1999-03-17 | Hiramoto, Masayoshi; Sakakima, Hiroshi; Matsukawa, Nozomu |
A magnetic thin film (2), e.g. of a MIG head (1), includes magnetic crystal grains in a region where an average crystal size of the magnetic crystal grains along a first direction is smaller than an average crystal size of the magnetic crystal grains along a second direction that is orthogonal to the first direction. Magnetization along the first direction is effected by an external magnetic field that is smaller than an external magnetic field for magnetization along the second direction. Thus, excellent characteristics in a high frequency can be obtained. |
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| 7 | Magnetic device, and process and apparatus for producing the same | EP97117815.7 | 1997-10-15 | EP0837480A1 | 1998-04-22 | Furukawa, Shinji; Yano, Nobuyoshi; Humphrey, Floyd B. |
A magnetic device comprising a soft magnetic thin film formed on a substrate, including a central area and a second area having a film thickness that is smaller than that of the central area, and wherein said magnetic device has a magnetic hysteresis loop which exhibits a discontinuous magnetization reversal. Also disclosed is a process and an apparatus for producing the magnetic device. |
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| 8 | SPIN RECTIFYING DEVICE, SPIN TRANSISTOR, AND SPIN RECTIFYING METHOD | EP12825398.6 | 2012-08-21 | EP2736080B1 | 2017-02-01 | KOHDA, Makoto; NITTA, Junsaku; KOBAYASHI, Kensuke |
| 9 | Magnetic thin film and magnetic head using the same | EP98307030.1 | 1998-09-02 | EP0902445B1 | 2004-06-02 | Hiramoto, Masayoshi; Sakakima, Hiroshi; Matsukawa, Nozomu |
| 10 | THIN FILM MAGNETIC ELEMENT HAVING A RHOMBIC SHAPE | EP90902073.0 | 1989-12-14 | EP0400142A1 | 1990-12-05 | SMITH, Neil |
| La présente invention permet une meilleure stabilisation de la magnétisation d'un film magnétique mince monodomaine (62) que celle obtenue dans le film mince rectangulaire (16) connu dans la technique antérieure, en conférant au film magnétique (62) une forme rhomboïde plutôt que rectangulaire. Dans un mode de réalisation de l'invention, les côtés transversaux (68, 70) du film sont anglés par rapport aux côtés longitudinaux (64, 66) selon un angle (63) égal ou inférieur à l'angle (72) au niveau du point de polarisation de la magnétisation (74) par rapport à la direction de l'axe facile (51), tel qu'établi par un champ de polarisation externe (76). Dans ces conditions, la magnétisation polarisée (74) du film (62), s'effectuant soit parallèlement, soit sous un angle positif par rapport aux côtés transversaux (68, 70) du rhomboïde, soit n'engendre aucune charge au niveau des bords transversaux (68, 70) du film, soit engendre réellement des charges (82, 84) qui produisent un champ parallèle à la composante longitudinale de la magnétisation (74), lequel stabilise plutôt qu'il ne la déstabilise la magnétisation (74) du domaine unique. | ||||||
| 11 | Magnetic film structure | EP84100437 | 1984-01-17 | EP0114076A3 | 1986-07-23 | Kumasaka, Noriyuki; Fujiwara, Hideo; Saito, Noritoshi; Otomo, Shigekazu; Yamashita, Takeo; Kudo, Mitsuhiro |
A magnetic film structure comprises at least one magnetic film unit (20, 21) wherein a plurality of main magnetic films (20) of 0.05 to 0.5 µm thickness made of a magnetic alloy containing iron or cobalt as principal constituent and having a high saturation magnetic induction of 10,000 gauss or more and a magnetostriction of 10-6 or less are laminated through intermediate magnetic films (21) made of a magnetic material such as a nickel and iron alloy or amorphous magnetic alloy different from that of the main magnetic film and being so thin that the influence of coercive force of the intermediate magnetic film (20) does not come out. A plurality of the magnetic film units (20, 21) are also laminated through non-magnetic insulating films (24). The magnetic film structure has high saturation magnetic induction and low coercive force. |
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| 12 | Charged wall amorphous magnetic layers and magnetic bubble devices comprising such layers | EP81100085.0 | 1981-01-08 | EP0035622A1 | 1981-09-16 | Gambino, Richard Joseph; Taylor, Robert Charles |
Amorphous ferrimagnetic layers (12) are described which support stable and mobile magnetic charged walls (14, 16). These layers can be used as drive layers in magnetic bubble domain devices, and are characterized by very weak even-fold in-plane anisotropy, or substantially zero in-plane anisotropy. The layers are metallic alloy compositions having magnetic properties that can be tailored over wide ranges, and are particularly suitable as drive layers for the propagation of bubble domains (B) of extremely small diameters in magnetic storage layers (10) along patterned propagation elements (12A, B). |
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| 13 | 자성시트 및 이를 포함하는 무선 전력 수신 장치 | KR20160117619 | 2016-09-12 | KR20180029541A | 2018-03-21 | YOON JONG HEUM; LEE SANG WON; BAE SEOK; YU SUN YOUNG |
| 실시예에의한자성시트는제 1 면을포함하는제 1 자성시트부; 제 1 면과대면하는제 2 면을포함하는제 2 자성시트부; 및제 1 면과제 2 면사이에배치되는접착부를포함하고, 접착부는복수의자성입자; 및복수의자성입자에코팅되며유기물을포함하는코팅층을포함할수 있다. | ||||||
| 14 | DUAL CONNECTOR INTERFACE FOR CAPACITIVE OR CONDUCTIVE COUPLING | EP13852966 | 2013-09-12 | EP2917979A4 | 2015-10-28 | VAN SWEARINGEN KENDRICK; VACCARO RONALD; PAYNTER JEFFREY; GUERIN MICHAEL |
| A connection interface with a female portion for interconnection with a conductive male portion or a capacitive coupling male portion interface provides conductive coupling when interconnected with the conductive male portion and capacitive coupling when coupled with the capacitive coupling male portion. The female portion may include a spring basket dimensioned to receive a pin of the conductive male portion and to seat within a socket of the conductive male portion, separated by an inner conductor dielectric spacer. | ||||||
| 15 | DUAL CONNECTOR INTERFACE FOR CAPACITIVE OR CONDUCTIVE COUPLING | EP13852966.4 | 2013-09-12 | EP2917979A1 | 2015-09-16 | VAN SWEARINGEN, Kendrick; VACCARO, Ronald; PAYNTER, Jeffrey; GUERIN, Michael |
| A connection interface with a female portion for interconnection with a conductive male portion or a capacitive coupling male portion interface provides conductive coupling when interconnected with the conductive male portion and capacitive coupling when coupled with the capacitive coupling male portion. The female portion may include a spring basket dimensioned to receive a pin of the conductive male portion and to seat within a socket of the conductive male portion, separated by an inner conductor dielectric spacer. | ||||||
| 16 | RECTIFYING DEVICE, TRANSISTOR, AND RECTIFYING METHOD | EP12825398.6 | 2012-08-21 | EP2736080A1 | 2014-05-28 | KOHDA, Makoto; NITTA, Junsaku; KOBAYASHI, Kensuke |
A rectifying device includes: a one-dimensional channel (18) formed with a semiconductor, electrons traveling through the one-dimensional channel; an electrode (26) that applies an effective magnetic field generated from a spin orbit interaction to the electrons traveling through the one-dimensional channel by applying an electric field to the one-dimensional channel, the effective magnetic field being in a direction intersectional to the direction in which the electrons are traveling; and an external magnetic field generating unit (38) that generates an external magnetic field in the one-dimensional channel. |
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| 17 | THIN FILM MAGNETIC ELEMENT HAVING A RHOMBIC SHAPE | EP90902073.7 | 1989-12-14 | EP0400142B1 | 1995-08-16 | SMITH, Neil |
| The present invention provides increased stabilization of the magnetization of a single domain thin magnetic film (62) over that attainable in the rectangular thin film (16) known in the prior art by shaping the magnetic film (62) as a rhomboid rather than as a rectangle. Practice of the invention teaches angling the transverse sides (68, 70) of the film with respect to the longitudinal sides (64, 66) either at an angle (63) equal to, or smaller than, the angle (72) at the bias point of the magnetization (74) with respect to the direction of the easy axis (51), as established by an external bias field (76). Under these conditions the biased magnetization (74) of the film (62), being either parallel to, or at a positive angle with respect to the transverse sides (68, 70) of the rhomboid, either generates no charges at the transverse edges (68, 70) of the film, or actually generates charges (82, 84) which produce a field parallel to the longitudinal component of the magnetization (74) which stabilizes the magnetization (74) of the single domain rather than destabilizes it. | ||||||
| 18 | Magnetic head | EP84100437.7 | 1984-01-17 | EP0114076B1 | 1992-01-02 | Kumasaka, Noriyuki; Fujiwara, Hideo; Saito, Noritoshi; Otomo, Shigekazu; Yamashita, Takeo; Kudo, Mitsuhiro |
| 19 | Charged wall amorphous magnetic layers and magnetic bubble devices comprising such layers | EP81100085.0 | 1981-01-08 | EP0035622B1 | 1985-07-03 | Gambino, Richard Joseph; Taylor, Robert Charles |
| 20 | Magnetic head | EP84100437.7 | 1984-01-17 | EP0114076A2 | 1984-07-25 | Kumasaka, Noriyuki; Fujiwara, Hideo; Saito, Noritoshi; Otomo, Shigekazu; Yamashita, Takeo; Kudo, Mitsuhiro |
A magnetic film structure comprises at least one magnetic film unit (20, 21) wherein a plurality of main magnetic films (20) of 0.05 to 0.5 µm thickness made of a magnetic alloy containing iron or cobalt as principal constituent and having a high saturation magnetic induction of 10,000 gauss or more and a magnetostriction of 10-6 or less are laminated through intermediate magnetic films (21) made of a magnetic material such as a nickel and iron alloy or amorphous magnetic alloy different from that of the main magnetic film and being so thin that the influence of coercive force of the intermediate magnetic film (20) does not come out. A plurality of the magnetic film units (20, 21) are also laminated through non-magnetic insulating films (24). The magnetic film structure has high saturation magnetic induction and low coercive force. |
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