| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 1 | 多重铁性层、含该层的结构，及形成该层及该结构的方法 | CN200780012344.2 | 2007-02-16 | CN101416314A | 2009-04-22 | 卢泰元; 尹钟杰; 李桢赫 |
| 本发明涉及将下述式(1)表示的材料形成具有六方晶体结构的层，其不同于该材料体相的斜方晶体结构，因此通过获得增强的多重铁性，该材料比传统的多重铁性材料可更有效地用于要求多重铁性的各种领域。RMnO3，(R代表镧系元素) …(1)。 | ||||||
| 2 | 多重铁性层、含该层的结构，及形成该层及该结构的方法 | CN200780012344.2 | 2007-02-16 | CN101416314B | 2012-05-30 | 卢泰元; 尹钟杰; 李桢赫 |
| 本发明涉及将下述式(1)表示的材料形成具有六方晶体结构的层，其不同于该材料体相的斜方晶体结构，因此通过获得增强的多重铁性，该材料比传统的多重铁性材料可更有效地用于要求多重铁性的各种领域。RMnO3，(R代表镧系元素)...(1)。 | ||||||
| 3 | Articles comprising magnetically soft thin films and methods for making such articles | EP97300373.4 | 1997-01-21 | EP0788120A1 | 1997-08-06 | Chen, Li-Han; Zhu, Wei; Jin, Sungho; van Dover, Robert Bruce |
The invention is embodied in a soft magnetic thin film article comprising an iron-chromium-nitrogen (Fe-Cr-N) based alloy and methods for making such article. The soft magnetic thin film article is formed using an iron-chromium-nitrogen based alloy with tantalum in one embodiment and with at least one of the elements titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), molybdenum (Mo), niobium (Nb) or tungsten (W) in another embodiment. The article is formed such that the alloy has a relatively high saturation magnetization (e.g., greater than approximately 15 kG) and a relatively low coercivity (e.g., less than approximately 2.0 oersteds) in an as-deposited condition or, alternatively, with a very low temperature treatment (e.g., below approximately 150°C). The inventive films are suitable for use in electromagnetic devices, for example, in microtransformer cores, inductor cores and in magnetic read-write heads. |
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| 4 | VARIABLE-FREQUENCY MAGNETORESISTIVE EFFECT ELEMENT AND OSCILLATOR, DETECTOR, AND FILTER USING THE SAME | US15718458 | 2017-09-28 | US20180102475A1 | 2018-04-12 | Tatsuo SHIBATA |
| A variable-frequency magnetoresistive effect element includes a magnetoresistive effect element, a magnetic-field applying mechanism that applies a magnetic field to the magnetoresistive effect element, an electric-field applying mechanism that applies an electric field to the magnetoresistive effect element, and a control terminal connected to the electric-field applying mechanism and used for applying a voltage that varies in at least one of magnitude and polarity to the electric-field applying mechanism. The magnetoresistive effect element contains an antiferromagnetic material or ferrimagnetic material having a magnetoelectric effect. A spin torque oscillation frequency or spin torque resonance frequency of the magnetoresistive effect element is controlled by varying the voltage applied via the control terminal in at least one of magnitude and polarity. | ||||||
| 5 | ELECTROSTATICALLY CONTROLLED MAGNETIC LOGIC DEVICE | US14608348 | 2015-01-29 | US20150372222A1 | 2015-12-24 | Marcin J. Gajek; Daniel C. Worledge; William H. Butler |
| A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion. | ||||||
| 6 | ELECTROSTATICALLY CONTROLLED MAGNETIC LOGIC DEVICE | US13761792 | 2013-02-07 | US20140217524A1 | 2014-08-07 | Marcin J. Gajek; Daniel C. Worledge; William H. Butler |
| A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion. | ||||||
| 7 | Memory device | US14099174 | 2013-12-06 | US20140169084A1 | 2014-06-19 | Joerg WUNDERLICH; Xavier MARTI; Tomas JUNGWIRTH |
| A memory device is described. The memory device comprises an antiferromagnet. The device may comprise an insulator and an electrode arranged in a tunnel junction configuration. Alternatively, the device may comprise first and second contacts to the antiferromagnet for measuring ohmic resistance of the antiferromagnet. The antiferromagnet is not coupled to any ferromagnet. The state of the antiferromagnet can be set by heating the junction to a temperature at or above a critical temperature at which is possible to re-orientate magnetic moments in the antiferromagnet, applying an external magnetic field and then cooling the antiferromagnet to a temperature below the critical temperature. | ||||||
| 8 | Antiferromagnetic storage device | US13234073 | 2011-09-15 | US08724376B2 | 2014-05-13 | Donald M. Eigler; Andreas J. Heinrich; Sebastian Loth; Christopher P. Lutz |
| An antiferromagnetic nanostructure according to one embodiment includes an array of at least two antiferromagnetically coupled magnetic atoms having at least two magnetic states that are stable for at least one picosecond even in the absence of interaction with an external structure, the array having a net magnetic moment of zero or about zero, wherein the array has 100 atoms or less along a longest dimension thereof. An atomic-scale structure according to one embodiment has a net magnetic moment of zero or about zero; two or more stable magnetic states; and having an array of atoms that has magnetic moments that alternate between adjacent magnetic atoms along one or more directions. Such structures may be used to store data at ultra-high densities. | ||||||
| 9 | Data storage medium with laterally magnetized pad and method for making same | US10482465 | 2002-07-02 | US07138193B2 | 2006-11-21 | Bernard Rodmacq; Stéphane Landis; Bernard Dieny |
| An information storage medium with an array of laterally magnetized dots, as well as a process for producing this medium is disclosed. Each dot (2) contains at least one magnetic domain formed by a thin layer (4) of at least a magnetic material laterally covering this flat material and deposited at oblique incidence relative to the normal (z) to the plane (6) of the array. The invention applies in particular to computer hard drives. | ||||||
| 10 | Data storage medium with laterally magnetised pad and method for making same | US10482465 | 2003-12-31 | US20040151947A1 | 2004-08-05 | Bernard Rodmacq; Stephane Landis; Bernard Dieny |
| An information storage medium with an array of laterally magnetised dots, as well as a process for producing this medium. Each dot (2) contains at least one magnetic domain formed by a thin layer (4) of at least a magnetic material laterally covering this flat material and deposited at oblique incidence relative to the normal (z) to the plane (6) of the array. The invention applies in particular to computer hard drives. | ||||||
| 11 | Growth of oxide exchange bias layers | US762087 | 1996-12-09 | US5783262A | 1998-07-21 | Alison Chaiken; Richard P. Michel |
| An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous. | ||||||
| 12 | First order transition films for magnetic recording and method of forming | US3607460D | 1968-11-18 | US3607460A | 1971-09-21 | LOMMEL JAMES M |
| Thin films of iron-rhodium exhibiting a broadly hysteretic first order transition between the ferromagnetic and antiferromagnetic states are produced by sequentially depositing iron and rhodium films upon a refractory substrate at a pressure in the range of 1 X 10 6 torr, annealing the structure in a vacuum of 1 X 10 6 torr at a temperature of approximately 700* C. for 1 hour to produce a complete diffusion of the iron and rhodium layers, and subsequently subjecting the diffused layers to a second anneal in an atmosphere greater than 10 parts per million oxygen in a thermal cycle that includes slowly heating the structure to 400* C., maintaining the 400* C. for approximately 10 minutes and slowly cooling to room temperature. Films thus formed are advantageously employed in the recording of digital information by electron beam heating individual regions through a first order transition to the ferromagnetic state whereupon the regions are permitted to cool to a biasing temperature slightly higher than the temperature of transition back to an antiferromagnetic state. A magnetic field then is applied to the entire film to magnetize only those regions of the film in the ferromagnetic state and readout of the recorded information can be achieved by conventional electron beam microscopy. The ferromagnetism of the film subsequently can be erased by cooling the film below the transition temperature to the antiferromagnetic state or by the application of a strain to the film.
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| 13 | Multi strong film, a manufacturing method of the structure, and the film and the structure containing same | JP2009504105 | 2007-02-16 | JP2009532324A | 2009-09-10 | ジョンヒョク イ; テウォン ノ; ジョンゴル ユン |
| 本発明は、下記一般式（１）で表される物質をバルク状態における第１の結晶構造と異なる第２の結晶構造を有する膜で製造し、
ＲＭｎＯ ３ （Ｒ＝ランタン系列の元素） ・・・（１） 既存の多強体物質より向上された多強体的な特性を獲得することにより、多強体特性が要求される多様な分野においてより効果的に用いられ得る。 |
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| 14 | The method of manufacturing an information storage medium and the medium comprising transverse magnetization dot array | JP2003511235 | 2002-07-02 | JP4044039B2 | 2008-02-06 | デニー，ベルナルド; ランディ，ステファン; ロドマック，ベルナルド |
| 15 | Organic magnetic film and a method of manufacturing the same | JP5436293 | 1993-03-15 | JP3388797B2 | 2003-03-24 | 忠 大竹; 小川 一文; 規央 美濃 |
| 16 | Magnetic laminate and the magneto-resistance effect element | JP35467391 | 1991-12-19 | JP3346787B2 | 2002-11-18 | 大助 宮内; 義和 成宮; 悟 荒木 |
| 17 | Antiferromagnetic film and magnetic head employing antiferromagnetic film | JP3983991 | 1991-03-06 | JPH04211106A | 1992-08-03 | NAKATANI RYOICHI; KITADA MASAHIRO; YUHITO ISAMU; TANABE HIDEO; SHIMIZU NOBORU; KOYAMA NAOKI |
| PURPOSE:To enhance corrosion resistance of an antiferromagnetic thin film 57 composed of an Fe-Mn-X alloy containing 0.1-20atm.% of third alloy element X (which enhances corrosion resistance of Fe-Mn alloy) which contacts with a permalloy thin film 51 thus preventing Barkhausen noise of a magnetoresistive effect element 50. CONSTITUTION:An element X is selected from a group of Ir, Ru, Zr, Nb, Si, Ge, V, Co, Hf, Pt and Pd. Ir of 4-15atm.% admixture or Ru of 5.5-15atm.% admixture is particularly preferable as the element X. Corrosion resistance is enhanced furthermore when one or more elements, selected from Ru, Rh, Pt, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni, Cu, Al, Si and Ge, are admixed. | ||||||
| 18 | MULTIFERROIC LAYER, STRUCTURE INCLUDING THE LAYER, AND METHODS OF FORMING THE LAYER AND THE STRUCTURE | KR20060030176 | 2006-04-03 | KR100680144B1 | 2007-02-01 | NOH TAE WON; YUN JONG GUL; LEE JUNG HYUK |
| A multiferroic layer, a structure with the same, and a method for forming the multiferroic layer and the structure are provided to be effectively used in various areas by obtaining improved multiferroic characteristics from the multiferroic layer. A multiferroic layer has a first crystal structure and a second crystal structure in a bulk state. The multiferroic layer is represented by a predetermined general expression of RMnO3, wherein the R of the RMnO3 is a lanthanum based element. The first crystal structure is formed like a rhombic type structure. The second crystal structure is formed like a hexagonal type. | ||||||
| 19 | PERMANENT MAGNET COMPRISING A STACK OF N PATTERNS | US15480741 | 2017-04-06 | US20170294253A1 | 2017-10-12 | Bertrand Delaet; Sophie Giroud; Rachid Hida |
| A permanent magnet includes a stack of N patterns stacked immediately one above the other in a stacking direction, each pattern including an antiferromagnetic layer made of antiferromagnetic material, a ferromagnetic layer made of ferromagnetic material, the directions of magnetization of the various ferromagnetic layers of all the patterns all being identical to one another. At least one ferromagnetic layer includes a first sub-layer made of CoFeB whose thickness is greater than 0.05 nm, and a second sub-layer made of a ferromagnetic material different from CoFeB and whose thickness is greater than the thickness of the first sub-layer. | ||||||
| 20 | Magnetoelectric chromia having increased critical temperature | US14629178 | 2015-02-23 | US09718700B2 | 2017-08-01 | Christian Binek; Peter Dowben; Kirill Belashchenko; Aleksander Wysocki; Sai Mu; Mike Street |
| A magnetoelectric composition of boron and chromia is provided. The boron and chromia alloy can contain boron doping of 1%-10% in place of the oxygen in the chromia. The boron-doped chromia exhibits an increased critical temperature while maintaining magnetoelectric characteristics. The composition can be fabricated by depositing chromia in the presence of borane. The boron substitutes oxygen in the chromia, enhancing the exchange energy and thereby increasing Néel temperature. | ||||||
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