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序号	专利名	申请号	申请日	公开（公告）号	公开（公告）日	发明人
61	Ferromagnetic tunnel magnetoresistive devices and magnetic head	US10958326	2004-10-06	US20050052790A1	2005-03-10	Jun Hayakawa
A ferromagnetic tunnel magnetoresistive film is associated with a high output and whose magnetoresistive ratio is less dependent on a bias voltage. In a three-terminal ferromagnetic tunnel magnetoresistive element, a decrease in an output is suppressed by a bias voltage applied to one of the tunnel junctions. By employing half-metallic ferromagnets in the element, the output can be enhanced and the dependency on the applied bias voltage can be reduced.
62	Soft magnetic thin film, and magnetic head and magnetic recording device using the same	US595080	1996-02-01	US5873955A	1999-02-23	Fumiyoshi Kirino; Shigekazu Otomo; Nagatugu Koiso; Noriyuki Kumasaka; Takeshi Miura
A recording head for recording data onto a recording medium is provided with a thin film formed of the following compound Fe.sub.100-a-b-c X.sub.a Y.sub.b Z.sub.c, wherein X is at least one element selected from the group consisting of Nb, Ta, Hf and Zr, Y is one or two elements selected from the group consisting of Cr, Ru, Al, Si, Ti and Rh, and Z is at least one element selected from the group consisting of C and N, and wherein 5.ltoreq.a.ltoreq.20, 0.5.ltoreq.b.ltoreq.15, 1.ltoreq.c.ltoreq.20, and 0.5.ltoreq.a/c.ltoreq.0.7, the carbide or the nitride of the element X having an average grain size of not larger than 3 nm. This way, increased corrosion resistance is provided without substantially reducing magnetic characteristics such as saturation and coercive force. A recording apparatus, such as a VTR, including such a recording head is disclosed as well as a recording medium formed using this thin film.
63	Method of manufacturing a magnetic bubble memory element	US880096	1978-02-22	US4369209A	1983-01-18	Tadashi Iwashimizu; Yasukazu Morita; Koichi Igarashi
A magnetic bubble memory element comprising a magnetic bubble memory unit and a separating region portion, which is prepared by the steps of forming a plurality of island shaped magnetic bubble memory units with separating regions intervening therebetween on a single crystalline substrate and performing the cutting process along the separating regions. In a preferably prepared memory element, the magnetic bubble memory unit and the separating region portion own in common a single crystalline magnetic thin layer which is formed on the substrate and the memory unit further comprises a hard bubble suppression film deposited on the magnetic thin layer, a conductor pattern layer and a magnetic film pattern layer both of which are deposited in that order on the suppression film so as to be insulated therefrom as well as insulated from each other. In another preferably prepared memory element, the memory unit and the separating region portion own in common the single crystalline magnetic thin layer and the hard bubble suppression film, and the memory unit further comprises the conductor pattern layer and the magnetic film pattern layer both of which are deposited in that order on the suppression film so as to be insulated therefrom as well as insulated from each other.
64	Temperature-stabilized low-loss ferrite films	US918298	1978-06-22	US4263374A	1981-04-21	Howard L. Glass; Michael T. Elliott; Rodney D. Henry
In the preferred embodiment, a monocrystalline film of substituted yttrium iron garnet (YIG) deposited on a <11> oriented gadolinium gallium garnet (GGG) substrate is formulated so that the temperature variation of the ferromagnetic resonance frequency of the film has an ordinary minimum. For a range of temperature variations about the temperature at which the minimum occurs, therefore, the resonance frequency of the film is relatively insensitive to variations in temperature. This minimum is believed to occur where the temperature variations of the demagnetizing effect and the temperature variations of anisotropy effects more or less counterbalance each other. The counter-balancing effects are brought within range of each other primarily by the substitution of gallium or aluminum for iron and substitution of lanthanum for yttrium in the substituted YIG. Gallium or aluminum reduces the temperature drift of the saturation magnetization. Lanthanum adjusts the misfit stress and thus the anisotropy effects.
65	Bloch-line memory system	US865468	1977-12-29	US4151606A	1979-04-24	Ernest J. Torok
An apparatus for and a method of storing binary data in a thin ferromagnetic film strip as the presence or absence of Bloch-lines without the presence of cross-ties. The apparatus utilizes a serrated strip of isotropic magnetic material that is formed in the shape of a series of contiguous disks. Each pair of contiguous disks is coupled by a narrow section of magnetic material that functions as a "door" between adjacent disks through which the Bloch-line defining datum bit may be propagated when subjected to the appropriate drive fields.
66	Magnetic bubble domain field shunt	US576526	1975-05-12	US4006276A	1977-02-01	Peter K. George
A magnetic bubble domain composite comprising an overlay of highly permeable magnetic material, such as permalloy, is provided for bubble domain material to shunt the magnetic field formed by bubble domains therein into a path that is substantially within the overlay. The overlay shunt reduces the substantial polarization that bubble domains can effect on the poles of field access propagation elements. By reducing the polarization, the shunt avoids drastic increases in the in-plane drive field that would otherwise be necessary to couple bubble domains formed in high magnetization materials to the poles of magnetic propagation elements. For the exemplary permalloy shunt, a typical thickness of approximately 500-1000 A provides adequate shunting of high magnetization materials, such as GdCo alloys or rare earth garnet alloys, that are capable of supporting small, typically submicron, bubble domains.
67	Single sided, high density bubble domain propagation device	US537804	1974-12-31	US3988722A	1976-10-26	George E. Keefe; Mark H. Kryder; Yeong S. Lin
A magnetic bubble domain propagation device which is single sided and can be used to move bubble domains in amorphous magnetic films. The propagation structure is comprised of either one or two layers located on a single side of the amorphous magnetic medium. Preferably, the propagation elements in each layer are contiguous to one another to provide maximum density. In a preferred embodiment, the propagation elements are circular, but other geometries can be used. The amorphous magnetic material is deposited over these underlayer propagation elements in order to create a change in the profile of the amorphous material. This change in profile of the amorphous material acts as a restraining barrier to bubble domain movement, so that the bubble domains will move along the proper channel without drifting to other propagation channels, and will move from one propagation element to the next without merely idling at any of the propagation elements.
68	Circular magnetic domain devices	US489816	1974-07-18	US3979736A	1976-09-07	Anthony Marsh
A circular magnetic domain device which includes a layer of a polycrystalline or amorphous uniaxial magnetic material having a single unique easy magnetisation direction substantially normal to a major surface thereof and crystallites of a maximum diameter that is at least one order of magnitude less than the width of the wall of circular magnetic domains that are to be generated, and caused to propagate in the layer. The crystallites of this diameter ensure a high lateral magnetic domain mobility within the layer. This layer can be formed with a relatively large surface area by any known process for example vapor phase deposition on a surface of the substrate.
69	Tailored anisotropy magnetic bubble domain material	US51832974	1974-10-29	US3930241A	1975-12-30	GUARNIERI C RICHARD; LEE KENNETH; ONTON AARE
A film of magnetic amorphous material capable of supporting bubble domains containing a region therein having a canted direction of magnetic uniaxial anisotropy is described. An example is a magnetic amorphous film having bubble domains therein in which the magnetic uniaxial anisotropy is canted at an angle of 5* from a line perpendicular to the plane of the film. Another example is a film of magnetic amorphous material containing one layer having the magnetic uniaxial anisotropy canted in one direction and a second layer having the magnetic uniaxial anisotropy canted in another direction.
70	Method for producing magnetic recording medium	US49190174	1974-07-25	US3929604A	1975-12-30	SHIRAHATA RYUJI; KITAMOTO TATSUJI; SHIMIZU MAHITO; TASAKI AKIRA; SUZUKI MASAAKI
A method for producing a magnetic recording medium by ionicplating having generally uniform magnetic characteristics in every direction comprising generating in a vacuum chamber and in a magnetic field a plasma of the glow discharge of a gas between a negatively-charged magnetic recording medium substrate and a positively-charged evaporative source of a ferromagnetic material and positioning the substrate in a magnetically concentrated zone of the plasma which is concentrated by the magnetic field, whereby the ferromagnetic material is evaporated and deposited on the magnetic recording medium substrate.
71	Method of making a thin film having a high coercive field	US3787237D	1971-06-22	US3787237A	1974-01-22	GRUNBERG G; MELNICK I; LAZZARI J
An isotropic thin film having a high coercive field for use as a magnetic memory, and comprising a non-ferromagnetic substrate, at least one chromium layer having a thickness smaller than 10,000 A overlying said substrate and at least one cobalt layer having a thickness smaller than 1,000 A overlying the chromium layer. In a process for the fabrication of the thin film, the chromium layer or layers and the cobalt layer or layers are deposited on the non-ferromagnetic substrate by evaporation under a vacuum.
72	Plated wire magnetic memory device	US3736576D	1970-11-27	US3736576A	1973-05-29
An electropolished, copper plated, beryllium copper wire is plated with a composite coating of a nickel-iron-cobalt alloy. Such coating consists of a layer having a high anisotropic field parameter, of the order of 6 oersteds or higher, adjacent the surface of the wire, superimposed by a layer having a lower anisotropic field parameter, of the order of 4 oersteds or less. The wire is plated in two plating cells, the first of which is provided with a plurality of passages directing the flow of a plating electrode with a major component of flow across the wire and a minor component of flow in one direction along the wire. The second plating cell is provided with a plurality of passages directing the flow of a plating electrolyte substantially transverse to the wire. The electrolyte supplied to the first cell contains salts of iron, nickel and cobalt, with cobalt being present in a relatively high concentration. A similar electrolyte is supplied to the second cell except that its maximum concentration of cobalt is about one fifth of that of the first electrolyte.
73	Bubble domain system	US3728697D	1970-12-21	US3728697A	1973-04-17	HEINZ D
A bubble domain system of magnetic material having a portion containing small diameter bubble domains and an adjacent portion having larger diameter bubble domains. A method for forming large diameter bubble domains in a magnetic material containing small diameter bubble domains is also included.
74	Method of forming bubble domain system	US3728153D	1970-12-21	US3728153A	1973-04-17	HEINZ D
A METHOD OF FORMING A BUBBLE DOMAIN SYSTEM OF MAGNETIC MATERIAL HAVING A PORTION CONTAINING SMALL DIAMETER BUBBLE DOMAINS AND AN ADJACENT PORTION HAVING LARGER DIAMETER BUBBLE DOMAN DIAMETERS THEREIN CLUDES THE STEP OF PROVIDING A FIRST SINGLE CRYSTAL MAGNETIC NETIC FILM HAVING A SMALL BUBBLE DOMAIN DIAMETERS THEREIN AND THE FURTHER STEP OF DEPOSITING A SIDNGLE CRYSTAL MAGNETIC FILM HAVING ALOWER MAGNETIZATION LEVEL ON A SPECIFIC PORTION OF SAID FIRST FILM. THE STRUCTURE FORMED BY THIS METHOD HAS LARGE DIAMETER BUBBLE DOMAINS IN THE PORTION HAVING BOTH OF THE FILMS AND SMALL DIAMETER BUBBLES IN THE PORTION HAVING ONLY ONE FILM.
75	Method of producing magnetic bubble domain devices	US3726049D	1971-09-30	US3726049A	1973-04-10	LUCAS J
Surface layers of platelets of magnetic bubble domain material are polished while the platelet is subjected to a magnetic field. Considerably lower value magnetic fields are used, compared with conventional methods in which the platelets are exposed to high value magnetic field after polishing.
76	Magnetic bubble domain system	US3699547D	1971-03-12	US3699547A	1972-10-17	OWENS JOHN M; HEINZ DAVID M
A magnetic bubble domain system having a strip or channel of film of magnetic bubble domain material associated with a supporting substrate is described. The surface of the strip of magnetic bubble domain material has a surface which is at substantially the same level as the surface of the adjacent material.
77	Methods of manufacturing arrays of thin magnetic elements and arrays produced by the methods	US3662357D	1970-03-30	US3662357A	1972-05-09	ENOCH REGINALD DAVID
This specification describes a method of manufacturing an array of data storage elements from thin sheet material, each element having at least one perforation for data entry and read-out conductors, in which a sheet of the magnetic material with the perforations for the elements is annealed whilst a magnetic field is applied across the sheet thereby to form lines of easy magnetization around the perforations and material is then removed from the sheet to form the separate storage elements. Examples of suitable magnetic materials include binary and ternary alloys of iron, nickel and cobalt.
78	Thin film magnetic information stores	US3582912D	1968-03-08	US3582912A	1971-06-01	VALIN JEAN; BRUYERE JEAN-CLAUDE
In a binary data information store, a multibit storage member in the form of a thin film magnetic structure includes at least one layer of ferromagnetic alloy and one layer of antiferromagnetic alloy, both of which are magnetized with identically orientated uniaxial anisotropy axes with hysteresis cycles which are substantially rectangular in the direction of said axes, the two layers are magnetically coupled in such a way that, once an information pattern impressed in the antiferromagnetic alloy layer, a corresponding information pattern is preserved in said ferromagnetic alloy layer irrespective of parasitic fields tending to variations of magnetization conditions, such for instance as any demagnetizing fields, and of temporarily localized variations of magnetization which may occur during readout operations.
79	Method of making a terminal bushing subassembly	US3538603D	1968-05-01	US3538603A	1970-11-10	BEJTLICH LEONARD M

80	Process for electrodeposition of anisotropic magnetic films and a product formed by the process	US3524173D	1967-05-22	US3524173A	1970-08-11	WOLF IRVING W

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