子分类：
| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 1 | 磁性片、使用该磁性片的电子设备及磁性片的制造方法 | CN201480017811.0 | 2014-03-27 | CN105074838A | 2015-11-18 | 渡边光弘; 三木裕彦; 中村真贵 |
| 一种磁性片，其在树脂薄膜上隔着粘附层保持有由Fe基金属磁性材料构成的薄板状磁性体而成，所述薄板状磁性体的单层厚度为15μm～35μm，所述薄板状磁性体在500kHz频率下的交流相对磁导率μr为220以上770以下。 | ||||||
| 2 | 磁阻式随机存取存储器技术中改善磁堆栈表面粗糙度的双层化学机械抛光方法 | CN200380102827.3 | 2003-11-05 | CN1729538A | 2006-02-01 | G·科斯特里尼; J·P·赫梅尔; M·克里斯南; 刘嘉成 |
| 本发明公开了一种用以制造磁阻式随机存取存储器(MRAM)单元的方法，其可解决因隧道接合层与磁性层间界面粗糙而产生的尼尔耦合问题。所述方法包含了在导体上沉积第一与第二阻障层，其中该第一阻障层的抛光速率与该第二阻障层的抛光速率不同；接着利用化学机械抛光(CMP)方式本质上移除该第二阻障层，而留下非常平滑且均匀的第一阻障层。当接着在经抛光的第一阻障层上形成磁性堆栈时，界面粗糙度便不会转移至该隧道接合层，因此不会产生磁化改变。 | ||||||
| 3 | 具有RuAl/NiAlB双晶种层的薄膜介质 | CN200410082466.7 | 2004-09-22 | CN1322494C | 2007-06-20 | 玛丽·F·多尔纳; 唐凯; 肖启凡 |
| 本发明披露了一种包括RuAl/NiAlB双晶种层的用于磁性薄膜记录介质的薄膜结构。RuAl/NiAlB结构的应用使得晶粒大小降低，Mrt取向比(OR)增加，SNR提高，和在较高振幅下有较低的PW50。RuAl和NiAlB晶种层的每层都具有B2结晶结构。可以利用RuAl/NiAlB双晶种层来获得(200)择优面心取向的底层，及获得(11-20)择优面心取向的钴合金磁性膜。 | ||||||
| 4 | 具有RuAl/NiAlB双晶种层的薄膜介质 | CN200410082466.7 | 2004-09-22 | CN1604200A | 2005-04-06 | 玛丽·F·多尔纳; 唐凯; 肖启凡 |
| 本发明披露了一种包括RuAl/NiAlB双晶种层的用于磁性薄膜记录介质的薄膜结构。RuAl/NiAlB结构的应用使得晶粒大小降低，Mrt取向比(OR)增加，SNR提高，和在较高振幅下有较低的PW50。RuAl和NiAlB晶种层的每层都具有B2结晶结构。可以利用RuAl/NiAlB双晶种层来获得(200)择优面心取向的底层，及获得(11－20)择优面心取向的钴合金磁性膜。 | ||||||
| 5 | COIL COMPONENT | US15590341 | 2017-05-09 | US20170330669A1 | 2017-11-16 | Toshio TOMONARI; Sachiko TAKANO; Shigeki SATO |
| Disclosed herein is a coil component that includes an element body made of a first magnetic material, a coil conductor embedded in the element body, and first and second magnetic films made of a second magnetic material having higher permeability than that of the first magnetic material. The element body has an upper surface crossing a coil axis of the coil conductor and first and second side surfaces extending substantially parallel to the coil axis. The first magnetic film is formed on the upper surface and first side surface of the element body, and the second magnetic film is formed on the upper surface and second side surface of the element body. | ||||||
| 6 | Fully Integrated Tuneable Spin Torque Device For Generating An Oscillating Signal And Method For Tuning Such Apparatus | US10584700 | 2004-12-24 | US20070285184A1 | 2007-12-13 | Wouter Eyckmans; Liesbet Lagae |
| The present invention is related to a a device and corresponding methods for generating an oscillating signal. The device comprises a means for providing a current of spin polarised charge carriers, a magnetic, e.g. ferromagnetic, excitable layer adapted for receiving the generated current of spin polarised charge carriers thus generating an oscillating signal with a frequency and an integrated means for interacting with said magnetic, e.g. ferromagnetic, excitable layer such that a selection of said oscillation frequency is achieved. No external field needs to be applied to select or tune the frequency. Different types of integrated means can be used, such as e.g. means inducing mechanical stress in the magnetic, e.g. ferromagnetic, excitable layer, means inducing exchange bias interactions and means inducing magnetostatic interactions. | ||||||
| 7 | Thin film head with nickel-iron alloy non-magnetic substratum between non-magnetic gap layer and upper magnetic pole layer | US10299177 | 2002-11-19 | US06970324B2 | 2005-11-29 | Shoji Ikeda; Takayuki Kubomiya; Ikuya Tagawa; Yuji Uehara |
| A soft magnetic film includes a ferromagnetic layer. The ferromagnetic layer is laid over a non-magnetic substructure including ferromagnetic atoms. The uniaxial magnetic anisotropy may be established in the ferromagnetic layer. Since a magnetic property is not required in the substructure under the ferromagnetic layer, the soft magnetic film of this type may be utilized for purposes of wider variations. | ||||||
| 8 | Method for electroplating a body-centered cubic nickel-iron alloy thin film with a high saturation flux density | US10053785 | 2002-01-18 | US20030136683A1 | 2003-07-24 | Mike Ming Yu Chen; Thomas Edward Dinan; Neil Leslie Robertson |
| A process for electroplating and annealing thin-films of nickel-iron alloys having from 63% to 81% iron content by weight to produce pole pieces having saturation flux density (BS) in the range from 1.9 to 2.3 T (19 to 23 kG) with acceptable magnetic anisotropy and magnetostriction and a coercivity (HC) no higher than 160 A/m (2 Oe). The desired alloy layer properties, including small crystal size and minimal impurity inclusions, can be produced by including higher relative levels of Fenullnull ions in the electroplating bath while holding the bath at a lower temperature while plating from a suitable seed layer. The resulting alloy layer adopts a small crystal size (BCC) without significant inclusion of impurities, which advantageously permits annealing to an acceptable HC while retaining the high BS desired. | ||||||
| 9 | Hybrid magnetic substrate and method for producing the same | US909353 | 1997-08-11 | US6120917A | 2000-09-19 | Kazuo Eda |
| According to the present invention, a hybrid magnetic substrate is provided, which includes: a magnetic substrate; and a holding substrate directly bonded to the magnetic substrate through at least one of a hydrogen bond and a covalent bond. Furthermore, a method for producing a hybrid magnetic substrate having the magnetic substrate and the holding substrate is provided, which includes the steps of: cleaning a surface of the magnetic substrate to be bonded and a surface of the holding substrate to be bonded; allowing the cleaned surfaces to be subjected to a hydrophilic treatment; and attaching the surfaces, which are subjected to the hydrophilic treatment, to each other to directly bond the magnetic substrate to the holding substrate. | ||||||
| 10 | Magnetic head | US155185 | 1993-11-22 | US5572391A | 1996-11-05 | Nobuyuki Ishiwata |
| A magnetic structure is provided with an alumina layer formed between a ceramic substrate and a soft magnetic layer. The alumina layer has a formative energy of oxide lower than that of the soft magnetic layer to protect diffusion of oxygen to the soft magnetic layer, when the soft magnetic layer is heated to be formed. Further, a bonding glass layer is positioned between the ceramic substrate and the alumina layer, and another ceramic substrate is formed on the soft magnetic layer. | ||||||
| 11 | Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element | US665665 | 1991-03-07 | US5169485A | 1992-12-08 | Silas J. Allen, Jr.; James P. Harbison; Mark L. Leadbeater; Ramamoorthy Ramesh; Timothy D. Sands |
| A non-volatile memory element based upon a thin epitaxial film of manganese aluminum upon a III-V semiconductor is described. The film is stable at elevated temperatures required for III-V semiconductor device processing, so permitting the monolithic integration of non-volatile memory elements with III-V semiconductor electronic and photonic devices. | ||||||
| 12 | Magnetic thin film plated wire memory | US3728698D | 1971-08-24 | US3728698A | 1973-04-17 | JOJIMA T; OKUDA M; KOBAYASHI S; TORII M |
| In a magnetic thin film plated wire memory, a magnetic keeper comprises a base portion and a number of elongated protrusions spaced with each other at fixed spaces to form grooves therebetween, the base portions and the protrusions being integral with each other. Within the magnetic keeper, a number of driving wires are embedded to intersect at right angles with the elongated protrusions with their upper surface exposing to the outside of the base portion of the magnetic keeper at the grooves between the elongated protrusions. Each groove snugly contains therein a magnetic wire.
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| 13 | Magnetic-wire memory matrix | US3465308D | 1965-02-09 | US3465308A | 1969-09-02 | SASAKI YOZO; FURUOYA TAKASHI; SUGIYAMA HARUO; MURAKAMI HIROSHI |
| 14 | Magnetic Diode in Artificial Magnetic Honeycomb Lattice | US15978042 | 2018-05-11 | US20190058110A1 | 2019-02-21 | Deepak Kumar Singh; Brock Summers; Ashutosh Dahal |
| A magnetic artificial honeycomb lattice comprising a multiplicity of connecting elements separated by hexagonal cylindrical pores, wherein: (a) the hexagonal cylindrical pores: (i) have widths that are substantially uniform and an average width that is in a range of about 15 nm to about 20 nm; and (ii) are substantially equispaced and have an average center-to-center distance that is in a range of about 25 nm to about 35 nm; and (b) the connecting elements comprise a magnetic material layer, and the connecting elements have: (i) lengths that are substantially uniform and an average length that is in a range of about 10 nm to about 15 nm; (ii) widths that are substantially uniform and an average width that is in a range of about 4 nm to about 8 nm; and (iii) a thickness of the magnetic material layer that is substantially uniform and an average thickness that is in a range of about 2 nm to about 8 nm; and (c) the magnetic artificial honeycomb lattice has a surface area, disregarding the presence of the hexagonal cylindrical pores, that is in a range in a range of about 100 mm2 to about 900 mm2. | ||||||
| 15 | Magnetic sheet, electronic device using same, and method for manufacturing magnetic sheet | US14780188 | 2014-03-27 | US10020104B2 | 2018-07-10 | Mitsuhiro Watanabe; Hirohiko Miki; Masaki Nakamura |
| Provided is a magnetic sheet including a resin film and a thin sheet-shaped magnetic body adhered to the resin film by an adhesive layer sandwiched between the thin sheet-shaped magnetic body and the resin film. The thin sheet-shaped magnetic body is made from an Fe-based metal magnetic material, has a thickness of 15 μm to 35 μm, and has an AC relative magnetic permeability (μr) in the range of 220 to 770 at a frequency of 500 kHz. | ||||||
| 16 | Fully integrated tuneable spin torque device for generating an oscillating signal and method for tuning such apparatus | US10584700 | 2004-12-24 | US07859349B2 | 2010-12-28 | Wouter Eyckmans; Liesbet Lagae |
| The present invention is related to a device and corresponding methods for generating an oscillating signal. The device comprises a means for providing a current of spin polarised charge carriers, a magnetic, e.g. ferromagnetic, excitable layer adapted for receiving the generated current of spin polarised charge carriers thus generating an oscillating signal with a frequency Vosc and an integrated means for interacting with said magnetic, e.g. ferromagnetic, excitable layer such that a selection of said oscillation frequency is achieved. No external field needs to be applied to select or tune the frequency. Different types of integrated means can be used, such as e.g. means inducing mechanical stress in the magnetic, e.g. ferromagnetic, excitable layer, means inducing exchange bias interactions and means inducing magnetostatic interactions. | ||||||
| 17 | Method for ultra-fast controlling of a magnetic cell and related devices | US12648958 | 2009-12-29 | US07791250B2 | 2010-09-07 | Wouter Eyckmans; Liesbet Lagae |
| The present invention relates to a device and corresponding method for ultrafast controlling of the magnetization of a magnetic element. A device (100) includes a surface acoustic wave generating means (102), a transport layer (104), which is typically functionally and partially structurally comprised in said SAW generating means (102), and at least one ferromagnetic element (106). A surface acoustic wave is generated and propagates in a transport layer (104) which typically consists of a piezo-electric material. Thus, strain is induced in the transport layer (104) and in the ferromagnetic element (106) in contact with this transport layer (104). Due to magneto elastic coupling this generates an effective magnetic field in the ferromagnetic element (106). If the surface acoustic wave has a frequency substantially close to the ferromagnetic resonance (FMR) frequency νFMR the ferromagnetic element (106) is absorbed well and the magnetization state of the element can be controlled with this FMR frequency. The device can be used in an RF-magnetic resonator, a sensor and a camera. The corresponding method can be used for ultrafast reading-out and switching of magnetic components and in magnetic logic. | ||||||
| 18 | Method for Ultra-Fast Controlling of a Magnetic Cell and Related Devices | US12648958 | 2009-12-29 | US20100164487A1 | 2010-07-01 | Wouter Eyckmans; Liesbet Lagae |
| The present invention relates to a device and corresponding method for ultrafast controlling of the magnetization of a magnetic element. A device (100) includes a surface acoustic wave generating means (102), a transport layer (104), which is typically functionally and partially structurally comprised in said SAW generating means (102), and at least one ferromagnetic element (106). A surface acoustic wave is generated and propagates in a transport layer (104) which typically consists of a piezo-electric material. Thus, strain is induced in the transport layer (104) and in the ferromagnetic element (106) in contact with this transport layer (104). Due to magneto elastic coupling this generates an effective magnetic field in the ferromagnetic element (106). If the surface acoustic wave has a frequency substantially close to the ferromagnetic resonance (FMR) frequency νFMR the ferromagnetic element (106) is absorbed well and the magnetization state of the element can be controlled with this FMR frequency. The device can be used in an RF-magnetic resonator, a sensor and a camera. The corresponding method can be used for ultrafast reading-out and switching of magnetic components and in magnetic logic. | ||||||
| 19 | Method for ultra-fast controlling of a magnetic cell and related devices | US10584699 | 2004-12-24 | US20070183190A1 | 2007-08-09 | Wouter Eyckmans; Liesbet Lagae |
| The present invention relates to a device and corresponding method for ultrafast controlling of the magnetization of a magnetic element. A device (100) includes a surface acoustic wave generating means (102), a transport layer (104), which is typically functionally and partially structurally comprised in said SAW generating means (102), and at least one ferromagnetic element (106). A surface acoustic wave is generated and propagates in a transport layer (104) which typically consists of a piezo-electric material. Thus, strain is induced in the transport layer (104) and in the ferromagnetic element (106) in contact with this transport layer (104). Due to magneto elastic coupling this generates an effective magnetic field in the ferromagnetic element (106). If the surface acoustic wave has a frequency substantially close to the ferromagnetic resonance (FMR) frequency νFMR the ferromagnetic element (106) is absorbed well and the magnetisation state of the element can be controlled with this FMR frequency. The device can be used in an RF-magnetic resonator, a sensor and a camera. The corresponding method can be used for ultrafast reading-out and switching of magnetic components and in magnetic logic. | ||||||
| 20 | BILAYER CMP PROCESS TO IMPROVE SURFACE ROUGHNESS OF MAGNETIC STACK IN MRAM TECHNOLOGY | US10289488 | 2002-11-06 | US20040087038A1 | 2004-05-06 | Gregory Costrini; John Hummel; Kia-Seng Low; Mahadevaiyer Krishnan |
| A method for manufacturing a magnetoresistive random access memory (MRAM) cell is disclosed, which alleviates the problem of Neel coupling caused by roughness in the interface between the tunnel junction layer and the magnetic layers. The method comprises depositing first and second barrier layers on the conductor, wherein the first barrier layer has a polish rate different from that of the second barrier layer. The second barrier layer is then essentially removed by chemical mechanical polishing (CMP), leaving a very smooth and uniform first barrier layer. When the magnetic stack is then formed on the polished first barrier layer, interfacial roughness is not translated to the tunnel junction layer, and no corruption of magnetization is experienced. | ||||||
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