| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 121 | Pattern forming method, a substrate manufacturing method, and a mold manufacturing method | JP2010214936 | 2010-09-27 | JP5214696B2 | 2013-06-19 | 朋一 梅澤 |
| 122 | Mold for nanoimprint and manufacturing method therefor | JP2011210253 | 2011-09-27 | JP2013073999A | 2013-04-22 | SATO HISATOSHI; USUKI KAZUYUKI; WAKAMATSU TETSUSHI |
| PROBLEM TO BE SOLVED: To reduce the thickness variation of resist in a mold for nanoimprint, and to impart high durability to the mold.SOLUTION: The mold for nanoimprint includes: a patterned substrate 10 having a pattern region 13 on one surface 11 in which a fine uneven pattern 12 is formed, and a 3σ value for the height difference distribution in the other surface 14 of 1-6nm; a bored substrate 30 having a shape from which a part corresponding at least to the pattern region 13 is bored, and a thickness thicker than that of the patterned substrate 10; and a metal film 20 formed between the patterned substrate 10 and the bored substrate 30 so as to bond the other surface 14 and the surface of the bored substrate 30 facing the other surface 14. | ||||||
| 123 | Production method of injection molding for a stamper | JP2012528742 | 2010-09-06 | JP2013503766A | 2013-02-04 | ヨン キュ キム; ソク ジェ ジョン |
| 【課題】本発明は、射出成形用スタンパの製造方法に係り、より詳細には、微細パターンを形成して金属スタンパを製造した後にも硬度が高いためにスクラッチの発生を防止でき、耐久性に優れた射出成形用スタンパの製造方法に関するものである。
【解決手段】本発明の射出成形用スタンパの製造方法は、基板に所定の微細パターンを形成するパターン形成段階と、基板に対して金属メッキを行って微細パターンが転写されたスタンパを形成する金属メッキ段階と、スタンパを基板から離型させるスタンパ分離段階と、スタンパのパターン上に鏡面を保持させるために保護層をコーティングする保護層コーティング段階と、を含む。 【選択図】図２ |
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| 124 | Mold for nanoimprint | JP2011052859 | 2011-03-10 | JP2012190986A | 2012-10-04 | SATO HISATOSHI; DAIMATSU TEI; WAKAMATSU TETSUSHI |
| PROBLEM TO BE SOLVED: To prevent the end of each protrusion in a hardening resin pattern from falling when a mold is pressed against the hardening resin on a substrate and then they are peeled off, in nanoimprint using a mold having a surface of a predetermined fine uneven pattern.SOLUTION: In a mold 1 for nanoimprint having a surface of a fine uneven pattern 13 consisting of a plurality of line-shaped protrusions 14 and recesses 15, the uneven pattern 13 includes at least one recess 15 having an end 15a of a predetermined shape. The predetermined shape is such a shape as the end 15a has a section of aspect ratio smaller than that of the section of a connection part 15b which is a part of the recess 15 having the end 15a other than the end 15a and is connected to the end 15a. | ||||||
| 125 | How to prepare the surface relief microstructure, associated devices and their | JP2011550460 | 2010-02-15 | JP2012517919A | 2012-08-09 | イブン−エラージ，モハメド; ヴァルネット，ヴォルフガング; ザイベルレ，フーベルト; マルツ，ジュリアン |
| 本発明は、パターン化された表面レリーフ微細構造を複製するための方法であって、パターン化された表面レリーフ微細構造を持つ第一の層を生成する工程と、第一の層の微細構造を第二の層に複写し、それにより、少なくとも一つのドライまたはウェットエッチング工程を伴うことにより、マスタを生成する工程とを含み、マスタの微細構造をレプリカ材料に接触させ、マスタの微細構造をレプリカに再現する、追加的な工程を特徴とする、方法に関する。 本発明は、さらに、その方法により、レプリカとして作製された要素に関する。 表面レリーフ微細構造は、ポジティブ−ネガティブおよび／または色イメージ反転を持つイメージを表示するために好適である。 本発明による要素は、特に、偽造および改ざんに対して文書および物品を保全するために有効である。 | ||||||
| 126 | Pattern formation method, substrate manufacturing method, and mold manufacturing method | JP2010214936 | 2010-09-27 | JP2012068563A | 2012-04-05 | UMEZAWA TOMOKAZU |
| PROBLEM TO BE SOLVED: To remove foreign materials on a photoresist layer while suppressing damage applied to a substrate.SOLUTION: A photoresist layer 12 capable of changing a shape under a heat mode and consisting of organic dye is formed on a substrate 11. A laser light is applied to the photoresist layer 12 and a hole 13 is formed on a portion of the photoresist layer to which the laser light is applied. The photoresist layer 12 is etched in vacuum using a prescribed gas and the foreign materials generated when the laser light is applied for forming the hole 13 are removed. | ||||||
| 127 | Organic mold and a method of manufacturing the same | JP2006500673 | 2004-04-14 | JP4901467B2 | 2012-03-21 | キム、テ・ワン; ヨ、ピル・ジン |
| 128 | Chemical amplification resist composition, and mold preparation method and resist film using the same | JP2010142062 | 2010-06-22 | JP2011186418A | 2011-09-22 | FUJIMORI TORU; SHIRAKAWA KOJI; USA TOSHIHIRO; SUGIYAMA KENJI; ITO TAKAYUKI; TSUBAKI HIDEAKI; NISHIMAKI KATSUHIRO; HIRANO SHUJI; TAKAHASHI HIDETOMO |
| <P>PROBLEM TO BE SOLVED: To provide a chemical amplification resist composition to be used for the preparation of a mold, capable of forming a pattern excellent not only in sensitivity and resolution, but also in the line width roughness (LWR) performance, in preparation of a mold. <P>SOLUTION: The chemical amplification resist composition contains a resin which is decomposed by an action of a specified acid to increase the solubility with an alkali developing solution, and a mold preparation method and a resist film each using the composition are also disclosed. <P>COPYRIGHT: (C)2011,JPO&INPIT | ||||||
| 129 | Mold and a manufacturing method thereof | JP2010501725 | 2009-01-29 | JP4608028B2 | 2011-01-05 | 哲也 今井; 修 加園; 昌広 勝村; 和信 橋本 |
| A mold is provided, at an outer circumferential region thereof, with portions to be gripped, to allow a transfer apparatus to perform transferring to an object. The portions to be gripped are formed in a different shape from the remaining portion of the outer circumferential region. For a mold set including two molds, each of the molds is provided, at an outer circumferential region thereof, with portions to be gripped, to allow the transfer apparatus to perform transferring to the object. The portions to be gripped are formed in a different shape from the remaining portion of the outer circumferential region. The portions to be gripped of one of the molds and the portions to be gripped of the other mold are disposed at different angular positions. | ||||||
| 130 | Tool for making microstructured articles | JP2010524112 | 2008-09-02 | JP2010537843A | 2010-12-09 | エム． デイビッド，モーゼス |
| A method for making a microstructured article, including (1 forming a first microstructured pattern on a substrate; (2) replicating the first microstructured pattern to make a second microstructured pattern in a flexible material; (3) replicating the second microstructured pattern multiple times to form a third microstructured pattern in a crosslinkable material to make a tool on a first carrier; and (4) replicating the third microstructured pattern in a polymer to make at least one microstructured article. | ||||||
| 131 | Method for manufacturing mold for lithography by nano-imprinting | JP2010046388 | 2010-03-03 | JP2010228448A | 2010-10-14 | LANDIS STEFAN; MORAND YVES |
| <P>PROBLEM TO BE SOLVED: To provide a device for forming a crowded structure with a three-dimensional pattern. <P>SOLUTION: A three-dimensional nano-imprinting device has at least: (a) a substrate (2) having a surface (X, Y); and (b) a plurality of nano-trenches (6) parallel two by two on the substrate, each nano-trench being specified by sidewalls and having at least one first and one second level in a direction perpendicular to the substrate, respectively of depth H1 and h2>h1, measured relative to the top of the sidewalls, and (c) the bottom of the nano-trenches at the last deep level (h1), is in a first type of material; the sidewalls is in a second type of material; and the first type of material is selectively etched relative to the second type of material for forming the walls of the nano-trench. <P>COPYRIGHT: (C)2011,JPO&INPIT | ||||||
| 132 | Method for manufacturing master disk, method for manufacturing optical disk, | JP2008257108 | 2008-10-02 | JP2010086636A | 2010-04-15 | MASUHARA SHIN; NAKAOKI ARIKATSU; YAMAZAKI TAKESHI; YUKIMOTO TOMOMI |
| <P>PROBLEM TO BE SOLVED: To materialize dramatic high-density recording by combining near-field exposure and an inorganic resist process together. <P>SOLUTION: In a lithography step of a master disk, a protective thin film is formed on a surface of an inorganic resist layer in advance, and subsequent to exposure, the protective thin film is removed and then development is conducted. A problem of unstable gap control between the master disk and the lens caused by direct irradiation of the inorganic resist with a laser beam resulting in contamination of a surface of a solid immersion lens due to volatilization of the resist material is avoided by conducting exposure in a state in which the inorganic resist layer is covered with the protective thin film. Furthermore, a risk of collision due to blocking of a gap between the master disk and the solid immersion lens caused by a swelling phenomenon of tens of nm subsequent to inorganic resist recording is avoided by suppressing the swelling of the inorganic resist on the exposed section with the protective thin film. <P>COPYRIGHT: (C)2010,JPO&INPIT | ||||||
| 133 | Stamper and the transfer device | JP2003093091 | 2003-03-31 | JP4269745B2 | 2009-05-27 | 成久 元脇; 昭浩 宮内; 孝介 桑原; 雅彦 荻野 |
| 134 | Method of manufacturing a light guiding plate manufactured stamper | JP2005001694 | 2005-01-06 | JP4248501B2 | 2009-04-02 | チェ テヒョン |
| 135 | Method of forming pattern, pattern formed by method of forming pattern, mold, processing apparatus and processing method | JP2007137234 | 2007-05-23 | JP2008290316A | 2008-12-04 | TERASAKI ATSUNORI; SEKI JUNICHI |
| <P>PROBLEM TO BE SOLVED: To provide a method or the like of forming a pattern by which the pattern is formed without using a resist as an etching mask and without using a lift-off method. <P>SOLUTION: The method of forming the pattern includes a step for forming the pattern formed by the resist on the surface of the thin film on a base material, a step for forming an inversion layer on the pattern formed by the resist, a step for forming an inversion pattern formed by the inversion layer which is complementary to the pattern formed by the resist by removing the inversion layer until the surface of the resist is exposed before the resist is removed, and a step for etching the thin film using the inversion pattern formed by the inversion layer as a mask to form a hard mask layer formed by the thin film having the inversion layer on the thin film and etching the base material using the hard mask layer or the hard mask layer formed by removing the inversion layer on the thin film as a mask. <P>COPYRIGHT: (C)2009,JPO&INPIT | ||||||
| 136 | The method of producing a resin molded article, a method of manufacturing a metal structure, the chip | JP2003080140 | 2003-03-24 | JP3990307B2 | 2007-10-10 | 剛典 木谷; 幸弘 柳川; 始弘 福田; 泰治 西 |
| 137 | Method for manufacturing a mold for producing optical surfaces, a method of producing a contact lens, and, apparatus for use with such a method | JP2006518480 | 2004-07-06 | JP2007518592A | 2007-07-12 | イェー エム ネリッセン，アントニウス; デル ピュッテン，テオドリュス イェー エム ファン; ドールマーレン，ヘンドリキュス ヘー ペー セー ファン |
| 特製の光学表面を生成するための型を製造する方法であって、型の所要形状を得るために、ベース形状を有する型は変更される。 変更は、型表面をフォトレジスト層（１６）で被覆するステップと、層を所定パターンの照射放射線（９）に露光するステップと、露光された層を現像することによって、所要の型形状（２２）を得るために、層の部分を除去するステップとを含むリソグラフィプロセスを用いて遂行される。 個々のコンタクトレンズのためのように、少量の光学表面を生成するためにこの方法を用い得る。 | ||||||
| 138 | Method for manufacturing high sag lens, and high sag lens manufactured thereby | JP2006277644 | 2006-10-11 | JP2007110122A | 2007-04-26 | LIM CHANG HYUN; CHOI SEOG MOON; LEE SUNG JUN; JEUNG WON KYU; PARK JI HYUN |
| PROBLEM TO BE SOLVED: To provide a method for manufacturing a high sag micro lens and a high sag lens manufactured by the method. SOLUTION: A micro lens structure having a higher sag is obtained by carrying out a reflow work after coating and baking a highly viscous photoresist two or more times. A micro lens having a high sag can be manufactured from this structure. COPYRIGHT: (C)2007,JPO&INPIT | ||||||
| 139 | Processing method | JP2001358062 | 2001-11-22 | JP3850718B2 | 2006-11-29 | 勝之 内藤; 正敏 櫻井 |
| 140 | Manufacturing method of the organic mold from the molding resin composition used for forming a fine pattern and it | JP2006500673 | 2004-04-14 | JP2006523728A | 2006-10-19 | キム、テ・ワン; ヨ、ピル・ジン |
| 【課題】不可逆的な接着や欠陥が発生することなく、基板から容易かつ反復的に離型され得る有機モールドの製造に使用できる、サブミクロンのパターンを形成するのに十分高いモジュラス、および優れた化学安定性および寸法安定性を有する新規なモールド材料、および該材料を用いた有機モールドの製作方法、並びにそれによって製作されたモールドを提供する。
【解決手段】微細パターンの形成に用いられるモールド用樹脂組成物は、（Ａ）反応性基を有する活性エネルギー硬化型ウレタン系オリゴマー４０〜９０重量部、（Ｂ）前記ウレタン系オリゴマーと反応性を有する単量体１０〜６０重量部、（Ｃ）前記成分（Ａ）と（Ｂ）の合計１００部に対してシリコーンまたはフッ素含有化合物０．０１〜２００重量部、および（Ｄ）前記成分（Ａ）、（Ｂ）および（Ｃ）の合計１００部に対して光開始剤０．１〜１０重量部を含む。 |
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