专利汇可以提供Semiconductor substrate for growth of an epitaxial semiconductor device专利检索,专利查询,专利分析的服务。并且A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer.,下面是Semiconductor substrate for growth of an epitaxial semiconductor device专利的具体信息内容。
What is claimed is:
This application claims priority of Taiwanese application No. 097151449, filed on Dec. 30, 2008.
1. Field of the Invention
This invention relates to a semiconductor substrate, more particularly to a semiconductor substrate for growth of an epitaxial semiconductor device.
2. Description of the Related Art
In optoelectric devices, a substrate suitable for growth of epitaxial layers thereon usually has a preferable lattice mismatch with the epitaxial layers, but has disadvantages, such as poor heat conductivity. Conversely, a substrate having a relatively high heat conductivity usually has a problem of lattice mismatching, which results in production of a number of threading dislocations. An existing method of making a semiconductor substrate is generally carried out by removing the substrate (sapphire) from the epitaxial layers and by attaching a heat-dissipating layer having a high heat conductivity to the epitaxial layers so as to maintain quality of the epitaxial layers and so as to enhance heat conduction.
U.S. Patent Application Publication No. 2008/0038857A1 discloses a method of making a gallium nitride-based semiconductor light-emitting device. The method includes steps of forming a sacrificial layer interposed between a substrate and a semiconductor epitaxial structure, and wet etching the sacrificial layer so as to remove the substrate from the semiconductor epitaxial structure. However, such removal has a disadvantage of poor etching efficiency due to side etching.
U.S. Pat. No. 5,073,230 discloses a method of making a semiconductor device. The method includes forming a plurality of etching holes that extend through a sacrificial layer and directing an etchant through the etching holes to eliminate the sacrificial layer. Formation of the etching holes increases an etching area and an etching rate. However, since the sacrificial layer itself is a dense film structure, the etching efficiency is still poor.
Therefore, an object of the present invention is to provide a semiconductor substrate that can overcome the aforesaid drawbacks associated with the prior art.
According to the present invention, a semiconductor substrate for growth of an epitaxial semiconductor device thereon comprises: a base layer; and a sacrificial layer formed on the base layer, and including a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each of the sacrificial film regions has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages are communicated spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer.
Other features and advantages of the present invention will become apparent in the following detailed description of the preferred embodiments of this invention, with reference to the accompanying drawings, in which:
Before the present invention is described in greater detail with reference to the accompanying preferred embodiments, it should be noted herein that like elements are denoted by the same reference numerals throughout the disclosure.
Referring to
Preferably, a selective etching ratio of the sacrificial layer 2 to the epitaxial layer 3 is greater than 5, more preferably, greater than 50.
In this embodiment, the sacrificial layer 2 is made of zinc oxide, the epitaxial layer 3 is made of gallium nitride (GaN), and an etching agent of hydrofluoric acid (HF) is used to etch the sacrificial layer 2 so that the epitaxial layer 3 is separated from the base layer 1. An etching rate at room temperature for the sacrificial layer 2 is about 15 μm/min and for the epitaxial layer 3 is lower than 10−5 μm/min. Alternatively, when the etching agent is hydrochloric acid (HCl), the etching rate for the sacrificial layer 2 is about 55 μm/min and for the epitaxial layer 3 is below 10−5 μm/min.
The sacrificial layer 2 is patterned and includes a plurality of spaced-apart sacrificial film regions 21 and a plurality of first passages 22. Each of the first passages 22 is defined between two adjacent ones of the sacrificial film regions 21 and has a width ranging from 1 μm to 10 μm. When the width of the first passages 22 is less than 1 μm, a flow rate of the etching agent is reduced, thereby adversely affecting the etching rate. On the contrary, when the width of the first passages 22 is greater than 10 μm, the epitaxial layer 3 cannot efficiently form a film.
Preferably, the first passages 21 have a height ranging from 0.5 μm to 5 μm. When the height is less than 0.5 μm, the first passages 21 may be filled with the epitaxial layer 3 during growth thereof and are therefore blocked such that the subsequent etching treatment cannot be efficiently carried out by passing the etching agent through the first passages 21 to remove the sacrificial layer 2 from the epitaxial layer 3. On the contrary, when the height is greater than 5 μm, the manufacturing cost is increased.
Referring to
Preferably, each of the nanostructures 211 has a diameter ranging from 5 nm to 500 nm. If the diameter is less than 5 nm, the epitaxial layer 3 formed thereon can not be efficiently attached to the sacrificial layer 2. On the contrary, if the diameter is greater than 500 nm, the width and the number of the second passages 212 in each sacrificial film region 21 can be reduced, which adversely affects the permeation of the etching agent therethrough.
Preferably, the second passages 212 have an average width less than that of the first passages 22 and are spatially communicated with each other and with the first passages 22, thereby benefiting the permeation of the etching agent. The second passages 212 have an average width ranging from 5 nm to 500 nm. When the average width is less than 5 nm, the etching rate is adversely affected. On the contrary, when the average width is greater than 500 nm, the epitaxial layer 3 is not efficiently formed as a film.
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After growth of the epitaxial layer 3, the sacrificial layer 2 is subjected to an etching treatment using wet etching, thereby separating the base layer 1 from the epitaxial layer 3. The etching treatment is carried out by passing an acid etching agent through the first and second passages 22, 212, which provide an increased surface area for the etching reaction and increased permeability for the etching agent.
Preferably, the acid etching agent is selected from the group consisting of hydrofluoric acid, sulfuric acid, hydrochloric acid, phosphoric acid, a buffered oxide etchant (BOE), and diluted or mixed solutions thereof. In this embodiment, the wet etching includes steam etching.
It is worth mentioning that, after removal of the sacrificial layer 2, the nanostructures 211 leave a plurality of rough surface portions 31 on the epitaxial layer 3 as shown in
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In these embodiments, the first passages 22 have a width ranging from 1 μm to 50 μm, and a height ranging from 0.5 μm to 3 μm. When the width of the first passages 22 is greater than 50 μm, the epitaxial layer 3 does not efficiently form a film. When the height of the first passages 22 is smaller than 0.5 μm, the first passages 22 are quickly and completely filled with the epitaxial layer 3 so that epitaxial lateral overgrowth which can reduce dislocation density can hardly take place. In addition, when the width of the first passages 22 is smaller than 1 μm, the lateral growth of the epitaxial layer 3 results in a quick merger so that reduction of the dislocation density is attenuated. When the height of the first passages 22 is greater than 3 μm or a ratio of the height to the width of the first passages 22 is greater than 3 μm, the epitaxial layer 3 does not easily fill the first passages 22 and the manufacturing cost is increased.
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Preferably, a krypton-fluoride (KrF) excimer laser having a wavelength of 248 nm and a power of 500-1500 mJ/cm2 is used. Other usable lasers are argon-fluoride (ArF) laser having a wavelength of 193 nm, xenon-chloride (XeCl) laser having a wavelength of 308 nm, xenon-fluoride (XeF) laser having a wavelength of 351 nm, krypton-chloride (KrCl) laser having a wavelength of 222 nm, xenon-bromine (XeBr) laser having a wavelength of 282 nm, and a solid-state laser, such as triple frequency Nd:YAG having a wavelength of 355 nm, or quadruple frequency Nd:YAG having a wavelength of 266 nm.
The nanostructures 211 are grown as nano-columns from zinc oxide using a chemical vapor deposition (CVD) process. The parameters of the process are: 10 torr; 450° C.; 60 min; 80 sccm diethyzinc (DEZn); and 1000 sccm O2.
The nanostructures 211 are formed as nano-needles through a two-step process. In the first step, the parameters are: 10 torr; 450° C.; 5 min; 10 sccm diethyzinc (DEZn); and 200 sccm O2. In the second step, the parameters are: 650° C.; 60 min; 60 sccm diethyzinc (DEZn); and 600 sccm O2.
The nanostructures 211 are formed as nanotubes employing a three-step process. In the first step, the parameters are: 10 torr; 450° C.; 15 min; 5 sccm diethyzinc (DEZn); and 200 sccm O2. In the second step, the parameters are: 650° C.; 30 min; 30 sccm diethyzinc (DEZn); and 600 sccm O2. In the third step, the parameters are: 450° C.; 90 min; 30 sccm diethyzinc (DEZn); and 600 sccm O2.
The epitaxial layer 3 is made from gallium nitride by chemical vapor deposition. The parameters are: 1040° C.; 300 slm NH3; 10 slm N2; and 65 sccm trimethylgallium (TMGa).
A semiconductor substrate having a 2 inch size is formed. Each of the sacrificial film regions 21 has an area of 1 mm×1 mm, and a thickness of 1 μm. The sacrificial layer 2 is etched using hydrochloric acid for about 150 min. The etching rate is 3.3 μm/min.
The experiment in this example is substantially similar to that in Example 5 except that the area of each of the sacrificial film regions 21 is reduced to 0.3 mm×0.3 mm, the etching time is about 25 min and the etching rate is 6 μm/min.
From examples 5 and 6, it can be understood that when the area of the sacrificial film regions 21 is reduced, the number of the first passages 22 increases, and the etching rate is efficiently increased.
With the invention thus explained, it is apparent that various modifications and variations can be made without departing from the spirit of the present invention. It is therefore intended that the invention be limited only as recited in the appended claims.
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