专利汇可以提供Production of high-strength silicon wafer专利检索,专利查询,专利分析的服务。并且PURPOSE: To obtain the high-strength silicon wafer which is decreased in warpage, dislocation, deposit, etc., by specifically regulating the kind and amt. of impurities to be added, heat treating conditions, rapid cooling conditions, etc., treating a single crystal ingot of silicon in inert atmosphere and then cutting out the wafer.
CONSTITUTION: The signal crystal ingot of the silicon contg. ≥1×10
17 cm
-3 boron impurity and the impurity (e.g. Ga, Sn) of group IIIb or IVb elements of the periodic table at the ratio higher than the ratio of the silicon atoms corresponding to the ratio to compensate the distortions occurring in this boron impurity is prepd. This single crystal ingot of the silicon is then disposed in the inert atmosphere and is held for ≥30 minutes at ≥1200°C; thereafter, the ingot is cooled at 20 to 60°C/min cooling rate. The wafer is cut out of the cooled single crystal ingot of the silicon, by which the high-strength silicon wafer is obtd. The element having the good characteristics is produced at a good yield by using this silicon wafer.
COPYRIGHT: (C)1991,JPO&Japio,下面是Production of high-strength silicon wafer专利的具体信息内容。
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