Silicon single crystal and its production
专利汇可以提供Silicon single crystal and its production专利检索，专利查询，专利分析的服务。并且PURPOSE: To easily obtain the silicon single crystal guttered of heavy metals, etc., by intentionally incorporating a large amt. of oxygen, nitrogen and D defects into a silicon ingot which is made into the single crystal by a floating zone melting method, then slicing the single crystal and heat-treating the wafers to getter impurities.
CONSTITUTION: While the ingot of the silicon is held in a nitrogen atmosphere, the zone region nearly perpendicular to the axis of this silicon ingot is maintained in a molten state. This molten zone is then moved in the direction parallel with the major axis at the sufficient speed to generate the D defects in order to crystallize the Si ingot into the single crystal while SiO
2 is brought into contact with the molten zone. The single crystal Si ingot contg. the large amt. of the oxygen, nitrogen and D defects is thus produced. This single crystal Si ingot is sliced and the resulted Si wafers are heat-treated to getter the impurities, by which the desired silicon single crystal is obtd.
COPYRIGHT: (C)1991,JPO&Japio，下面是Silicon single crystal and its production专利的具体信息内容。
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6 生产单晶硅的方法
